Semiconductor Devices

The first transistor (1947)

Doping: introduction of foreign atoms to engineer
semiconductor electrical properties.
Donors: For Si, group-V atoms with 5 valence electrons
(As, P, Sb), 4 electrons of donor atom participate in
bonding, 5th atom easy to release and is available for
conduction.
Donor site becomes positively charged (fixed charge).
n-type Doping (Bonds)
n-type Doping Bands Diagram
Acceptors: For Si, group-III atoms with valence electrons (eg. B),
3 electrons used in bonding to neighboring atoms, 1 bonding
site unsatisfied and easy to accept neighboring bonding electron
to complete all bonds.

Each acceptors release 1 hole that is available to conduction.

Acceptor site becomes negatively charged (fixed charge).

p-type Doping-Bonds
p-type Doping-Bands
 Fermi levels

E
c

EFermi

Ev

p-type or n-type?
 Fermi levels

E
EcFermi

Ev

p-type or n-type?
 Fermi levels

E
EFermi
c

Ev

p-type or n-type?
Degenerate doping
EFermi
E
c

Ev

p-type or n-type?