The document discusses single event transients (SETs) caused by radiation in semiconductor devices. [1] When radiation strikes the material, it generates electron-hole pairs through ionization, producing an SET current pulse. [2] Charge collection occurs in reverse-biased junctions like drain/well and drain/substrate junctions in CMOS transistors. [3] Electrical, logical, and temporal masking effects can prevent the SET from propagating to storage elements and causing errors.
The document discusses single event transients (SETs) caused by radiation in semiconductor devices. [1] When radiation strikes the material, it generates electron-hole pairs through ionization, producing an SET current pulse. [2] Charge collection occurs in reverse-biased junctions like drain/well and drain/substrate junctions in CMOS transistors. [3] Electrical, logical, and temporal masking effects can prevent the SET from propagating to storage elements and causing errors.
The document discusses single event transients (SETs) caused by radiation in semiconductor devices. [1] When radiation strikes the material, it generates electron-hole pairs through ionization, producing an SET current pulse. [2] Charge collection occurs in reverse-biased junctions like drain/well and drain/substrate junctions in CMOS transistors. [3] Electrical, logical, and temporal masking effects can prevent the SET from propagating to storage elements and causing errors.
particle? Explain how an SE current pulse is generated? Where does the charge collection occur? When an energetic particle strikes the semiconductor material it loses energy through Coulombic interactions. This process creates an electron-hole pair BY IONIZATION Charge collection OCCURS in reverse-biased junctions because of the greater thickness of the depletion region
These would include the drain/well and drain/substrate
junctions in CMOS transistors. QUESTION
Explain what type of masking effect prevents the
single event transient from reaching to storage element. Electrical Masking
It consists on the attenuation of an erroneous pulse after
passing a number of subsequent gates to the point that the pulse does not affect the output.
Short pulses will be attenuated via electrical masking
QUESTION
if we set, the 2nd input of AND gate to logic 0
(instead of logic 1 shown), what sort of masking effect would be present in addition to the Electrical Masking ? Logical masking. Explain Temporal masking? or latching window masking.
The timing of the narrow pulse at the input of a latch should
coincide with the rising edge of a clock and satisfy also the setup and hold time requirements QUESTION
• Explain what are the effects of newer
technologies on the electrical, logical and temporal masking • The reduction in the number of gates between latches affects to logical and electrical masking.
• Newer technologies produce stronger SE pulses that
cannot be electrically masked so easily (remember VDD goes down).
• As working frequencies raise, since there is more
latching clock edge now present, the probability that a combinational fault is latched (becomes an error) is higher. The probability of this overlap to occur increases with clock frequency and the width of the injected transient fault. Question: In older technologies like 1 m and above, the Single Event Transients generated due to radiation in commercial application did not cause any concern.
Assume, the figure above is for an older technology. The figure
below shows that an SET transient is generated at node x. It also shows that nothing reaches to the output, so output stays remain at 0.
Figure out which of the following statement is false (only one
answer is incorrect): a) In older technologies, the circuit nodes capacitances were large due to the fact that transistor areas were in micro-meter squares so charges did not create enough voltage. b) In older technologies, the voltage swings were high, which made the SET transients unimportant. c) In older technologies the SET pulse width was very short compared to normal logic pulse .This made SET unimportant. d) We can expect more electrical masking in older technologies compared to newer technologies. e)In newer technologies like 90 nm, we can expect there would be more timing window or latching window masking compared to older technologies. a) In older technologies, the circuit nodes capacitances were large due to the fact that transistor areas were in micro-meter squares so charges did not create enough voltage. b) In older technologies, the voltage swings were high, which made the SET transients unimportant. c) In older technologies the SET pulse width was very short compared to normal logic pulse .This made SET unimportant. d) We can expect more electrical masking in older technologies compared to newer technologies. e)In newer technologies like 90 nm, we can expect there would be more timing window or latching window masking compared to older technologies. QUESTION
TRUE/ FALSE
If an SET created on a circuit node, this always
mean and SEU error (soft error) will be created. FALSE
When a particle strikes and creates a pulse at a node,
researchers generally refer to it as a single-event transient (SET) fault. At the moment the particle strikes and has created a pulse, it has not yet generated any soft error. (SEU is not yet created).
No masking should occur, before and SEU created from
an SET pulse. For an SET to cause false data in a circuit and for the data to propagate to a point where it can do harm, the situation must satisfy the following conditions:
A disturbance must be strong enough to generate a signal
on any one of the nodes in a circuit. This can happen anywhere in a circuit, at any time. We can only probabilistically predict its occurrence.
Such signals are rather narrow spikes. Therefore, the
combinational logic must be fast enough to propagate such a signal. Or spikes should have enough width and be comparable to a logic pulse. For this narrow pulse to propagate through the combinational logic, the path it takes must be logically Enabled
Finally, for this narrow pulse to do damage later on,