Dr.

AMBEDKAR INSTITUTE OF TECHNOLOGY

(An Autonomous Institution, Aided by Government of Karnataka)
Near Jnana Bharati Campus, Bangalore-560056.

Seminar presentation
IGBT
(INSULATED GATE BIPOLAR TRANSISTOR)
Presented by-
SIDDALINGARADHYA H M
(Department of Electrical and Electronics
Engineering)
M.Tech in Power Electronics
CONTENTS
• INTRODUCTION
• CONSTRUCTION OF IGBT
• OPERATING PRINCIPLE OF IGBT
• CHARACTERISTICS OF IGBT
INTRODUCTION
• The IGBT (Insulated Gate Bipolar transistor)
which provides conduction characteristics like
bipolar junction transistor and voltage control
like the MOSFET.
• The input characteristics of IGBT are like
MOSFET and output like BJT.
• These devices have near ideal characterstics for
high voltage (>100v) medium frequency
(20kHz) applications.
CONSTRUCTION OF IGBT
• The p+ injecting layer forms a pn junction with
the drain layer and injects minority carriers into
it.
• The n type drain layer may have two different
doping levels. The lightly doped n region is
called drain drift region.
• Doping level and width of this layer sets the
forward blocking voltage of the device.
• It includes the insulated gate structure and the
shorted body (p type)-emitter (n+ type)
structure.
• A large number of basic cells are grown on a
single silicon wafer and connected in parallel
to form a complete IGBT device.
• The IGBT cell has parasitic p-n-p-n thyristor
structure embedded to it a shown in fig.2(a)
• The constituent p-n-p transistor,n-p-n
transistor and driver MOSFET are shown by
dotted lines in this fig.2(a)
• Important resistances in the current flow path
are also indicated.
Thank you