Electronic Devices and Circuit Theory

Boylestad

DC Biasing - BJTs

Chapter 4

Dr. Nasser H. Almofari 1

 Design Operation
• Given the device characteristics of Fig. 4.59a ,
determine VCC, RB, and RC for the fixed-bias
configuration of Fig. 4.59b .

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 EXAMPLE
• Given that ICQ = 2 mA and VCEQ=10
V, determine R1 and RC for the network
of Fig. 4.60 .

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 EXAMPLE 4.23
• The network of Fig. 4.61
has the following
specifications: ICQ= 1/2 Isat,
ICsat= 8 mA, VC = 18 V, and
β=110. Determine RC , RE ,
and RB .

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Determine the resistor values for the network

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 Design of a Current-Gain-Stabilized (Beta-
Independent) Circuit
• EXAMPLE 4.25 Determine the levels of RC,
RE, R1, and R2 for the network of Fig. 4.63 for
the operating point indicated.

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MULTIPLE BJT NETWORKS

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For dc Analysis

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 Darlington amplifier
• you will find in the next
chapter that the ac gain is
very close to 1 but the
input impedance is very
high, making it attractive
for use in amplifiers
operating off sources that
have a relatively high
internal resistance.

• If a load resistor were

added to the collector leg
and the output taken off
the collector terminal,
the configuration would
provide a very high gain.

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For dc analysis

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 Example
• Determine the dc levels for the currents and voltages of the direct-
coupled amplifier of Fig. 4.72 . Note that it is a voltage-divider bias
configuration followed by a common-collector configuration; one that is
excellent in cases wherein the input impedance of the next stage is quite
low. The common-collector amplifier is acting like a buffer between
stages.

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For dc analysis

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 Applications
• The application of transistors is not limited
solely to the amplification of signals.

• Through proper design, transistors can be

used as switches for computer and control
applications.

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Ch.4 Summary

Transistor Switching Networks

Transistors with only the DC source applied can be

used as electronic switches.

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Ch.4 Summary

Switching Circuit Calculations

Saturation current:
VCC
ICsat 
RC

To ensure saturation:
ICsat
IB 
βdc

Emitter-collector
resistance at VCEsat VCC
Rsat  Rcutoff 
saturation and cutoff: ICsat ICEO

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 Example
• Determine RB and RC for the transistor inverter
of Fig. 4.90 if ICsat= 10 mA.

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Ch.4 Summary

Switching Time

Transistor switching times:

t on  t r  t d

t off  t s  t f

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Switching Transistors

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 Practical Applications
• BJT Diode Usage

• Sometimes BJT transistor used as diode rather than a

transistor.
• There are a number of reasons for such use, including the
fact that it is cheaper to buy a large number of transistors
rather than a smaller bundle and then pay separately for
specific diodes.
• However, only two terminals of the BJT are being
employed.

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 Relay Driver
• In Fig. 4.104 a transistor is used to establish the current
necessary to energize the relay in the collector circuit.
• With no input at the base of the transistor, the base current,
collector current, and coil current are essentially 0 A, and the
relay sits in the unenergized state (normally open, NO).

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 Relay Driver
• Problems can now develop when the signal is removed from
the base to turn off the transistor and deenergize the relay.
• Ideally, the current through the coil and the transistor will
quickly drop to zero, the arm of the relay will be released,
and the relay will simply remain dormant until the next “on”
signal.
• However, we know from our basic circuit courses that the
current through a coil cannot change instantaneously, and, in
fact, the more quickly it changes, the greater the induced
voltage across the coil as defined by vL = L(diL > dt). In
this case, the rapidly changing current through the coil will
develop a large voltage across the coil with the polarity
shown in Fig. 4.104 , which will appear directly across
the output of the transistor.
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 Relay Driver
• The chances are likely that its magnitude
will exceed the maximum ratings of the
transistor, and the semiconductor device
will be permanently damaged. The
voltage across the coil will not remain at
its highest switching level but will
oscillate as shown until its level drops to
zero as the system settles down.
• This destructive action can be subdued by placing a diode across the coil
as shown in Fig. 4.104b .
• During the “on” state of the transistor, the diode is back-biased; it sits like
an open circuit and doesn’t affect a thing. However, when the transistor
turns off, the voltage across the coil will reverse and will forward-bias the
diode, placing the diode in its “on” state. The current through the inductor
established during the “on” state of the transistor can then continue to
flow through the diode, eliminating the severe change in current level.
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Maintaining a Fixed Load Current

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 Maintaining a Fixed Load Current
• we assume that the characteristics of a transistor have the
ideal appearance of Fig. 4.106a (constant beta throughout)
a source, fairly independent of the applied load, can be
constructed using the simple transistor configuration of Fig.
4.106b .
• The base current is fixed so no matter where the load line is,
the load or collector current remains the same.
• In other words, the collector current is independent of the
load in the collector circuit. However, because in the actual
characteristics beta will vary from point to point, and even
though the base current may be fixed by the configuration,
the beta will vary from point to point with the load
intersection, and IC = IL will vary—not characteristic of a
good current source.
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 Maintaining a Fixed Load Current
• Recall that, the voltage-divider configuration
resulted in a low level of sensitivity to beta, so
perhaps if that biasing arrangement is used, the
current source equivalent is closer to reality.
• In fact, that is the case. If a
biasing arrangement such as
shown in Fig. 4.107 is
employed, the sensitivity to
changes in operating point due
to varying loads is much less,
and the collector current will
remain fairly constant for
changes in load resistance in
the collector branch. Dr. Nasser H. Almofari 28
 Maintaining a Fixed Load Current
• Using Fig. 4.107 , we can describe the improved
stability by examining the case where IC may be trying
to rise for any number of reasons. The result is that IE =
IC will also rise and the voltage VRE= IERE will
increase. However, if we assume VB to be fixed (a
good assumption because its level is determined by two
fixed resistors and a voltage source), the base-to-emitter
voltage VBE = VB - VRE will drop.
• A drop in VBE will cause IB and therefore ( IC = β IB)
to drop. The result is a situation where any tendency for
IC to increase will be met with a network reaction that
will work against the change to stabilize the system.
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Alarm system

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OR Gate

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AND Gate

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Ch.4 Summary

Troubleshooting Hints
Approximate voltages VBE  .7 V for silicon transistors
VCE  25% to 75% of VCC

Test for opens and shorts with an ohmmeter.

Test the solder joints.
Test the transistor with a transistor tester or a curve tracer.

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Ch.4 Summary

PNP Transistors

The analysis for pnp transistor biasing circuits is

the same as that for npn transistor circuits. The
only difference is that the currents are flowing in
the opposite direction.

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