Module-II

Magnetic Sensor
 Magnetic Sensor

• A magnetic sensor converts a magnetic field into an electrical signal.

• Two applications can be distinguished for the magnetic sensors.

• In direct applications the magnetic sensor is part of a magnetometer. Examples are the geomagnetic field
measurements, the reading of magnetic data storage media, the identification of magnetic patterns in cards and
banknotes, and the control of magnetic apparatus.

• In indirect applications the magnetic field is used as an intermediary carrier for detecting non-magnetic signals.

• Examples are potential-free current detection for overload protection, integrated watt-hour meters, and contactless
linear or angular position, displacement, or velocity detection using a permanent magnet.

• These applications require the detection of magnetic fields in the micro- and millitesla range, which can be achieved
by integrated semiconductor sensors.
 Variable reluctance sensor

• A variable reluctance sensor (commonly called a VR sensor) is a transducer

that measures changes in magnetic reluctance. When combined with basic
electronic circuitry, the sensor detects the change in presence or proximity
of ferrous objects.

• With more complex circuitry and the addition of software and specific
mechanical hardware, a VR sensor can also provide measurements of linear
velocity, angular velocity, position, and torque
 THE VARIABLE RELUCTANCE SENSOR

• The variable reluctance sensor is strain-based, wherein a magnetic circuit is formed, and the

parameter input causes mechanical deflection of the spring member as a function of pressure,

force, or acceleration.

• To provide a static output capability, variable reluctance sensors require an oscillator and

demodulator system internally limiting operational temperatures from -40 C

to +120 C.

• The spring member is comprised of magnetic, high-permeability material and is centrally

located between two coils

The Variable Reluctance Differential Pressure Sensor
 The Variable Reluctance Differential Pressure Sensor

 The coils are sealed from the measurand by nonmagnetic welded stainless steel barriers. In the
case of the differential pressure transducer, the difference in pressure between
the two sides of the spring member will cause distortion of the spring member towards the
magnetic pole piece on the low-pressure side of the spring member resulting in modulation of the
inductance(L) of the two coils.
 The electrical configuration of the variable reluctance sensor is that of an inductive half-bridge
driven by an alternating voltage source in the range of 1 KHz to 10 KHz. The centrally disposed
spring member results in an inductive push-pull arrangement where deflection of the spring
member reduces the inductance of one coil and increases the inductance of the other creating a
difference in coil impedance.
 The variation in the magnetic reluctance produces the effective inductance modulation as a
function of the parameter input.
The Variable Reluctance Accelerometer
 The Variable Reluctance Accelerometer

 The thermal-sensitivity shift of the variable reluctance sensor varies with temperature in much
the same way as the LVDT inductance varies with temperature, in that, the TCR of the coils
increases the coil resistance with increasing temperature, thereby decreasing the current and the
magnetic flux generated.
 The use of a constant-current drive can be used to fix the current at a constant value
irrespective of temperature. A series resistor, as used in sensitivity compensation of
LVDT sensors, can also be used in series with a voltage source to simulate a constant-current
drive in variable reluctance applications.
 The series resistor is low thermal coefficient of resistance (TCR) and forms a voltage divider in
series with the coils where the voltage applied to the coils increases with
increasing temperature, thereby resulting in a constant current and constant-flux condition
 Solid-State Sensors
 Solid-state sensors have no mobile parts and they must not be confused with transducers or actuators which react
depending on the sensor response. Between sensor and actuator, a signal processing unit controls the whole system.
 Because the signal processing unit can be built as a semiconductor device, it is desirable to have the sensor device and
the signal processing unit on the same chip. Integrated sensors can be built by taking advantage of semiconductor
technology.
 A solid-state sensor is designed in such a way that the measurand, the physical property to be sensed, exploits a
physical phenomenon within the sensor structure. This physical phenomenon leads to an electrical response that can
be detected and magnified with electronics. However, the design of such an integrated sensor must be accomplished
under some restrictions.
 In the case of solid-state magnetic sensors such as MAGFETs, the measurand is the magnetic induction B
      

 is the magnetic induction in Tesla units, H is the magnetic field vector,

 denotes the permeability of free space, is the relative permeability
Block diagram of a Solid State sensor system
 Solid-State Sensors

 Integrated sensors offer cheap solutions for controlling industrial processes and they are a good choice for

medical applications. For any given application, the strength of a physical quantity should be measured.

 A solid-state sensor is designed in such a way that the measurand, the physical property to be sensed,

exploits a physical phenomenon within the sensor structure.

 This physical phenomenon leads to an electrical response that can be detected and magnified with

electronics. However, the design of such an integrated sensor must be accomplished under some restrictions.
 Solid-State Sensors
The selection of the appropriate sensor design and technology depends on a number of further specifications that may vary
widely from one application to another. Solid-state magnetic sensors are characterized by using some figures of merit, such
as
 availability and cost of technology
 application environment: temperature, humidity and chemical stress, vibrations and mechanical stress
 geometry: field parallel or perpendicular to chip surface
 sensitivity, signal level
 magnetic field resolution, signal-to-noise ratio: accuracy (absolute) and precision (relative)
 spatial resolution
 time resolution, frequency response
 linearity of magnetic response
 temperature coefficient of sensitivity
 offset and its temperature dependence
 power consumption, size, weight
 electrical input and output impedance
 stability, reliability, lifetime
 testability of above specification
 Magnetic MOS Field-Effect-Transistor

The inversion layer of a metal-oxide-semiconductor field-effect-transistor (MOSFET) can be used as the active region
of a magnetic sensor.
This active region can exploit the Hall effect for Hall based sensors, or the carrier deflection, if the device has a split-
drain.
A split-drain MOSFET structure is called MAGFET if it is used as a magnetic sensor.
 Magnetic MOS Field-Effect-Transistor

One of the main advantages of a MAGFET is its compatibility with the CMOS process without the need for post-
processing steps.
Very low power consumption can be achieved with this technology. The ability of integrating the bias and control
circuitry on the same chip makes this device structure particularly attractive.
However, the most serious drawback of the MAGFET is its noise. Also, the electron mobility of the inversion layer is
relatively low, which results in limited sensitivity of the whole structure, making it only useful for large magnetic
induction in the 100 mT range.
 Magnetic Speed Sensors

Completely self-powered, VRS (Variable Reluctance Speed)sensors are simple, rugged devices that do not
require an external voltage source for operation
 Passive VRS (Variable Reluctance Speed) Magnetic Speed sensors are simple, rugged devices that do not
require an external voltage source for operation.
 A permanent magnet in the sensor establishes a fixed magnetic field. The approach and passing of a ferrous
metal target near the sensor’s pole piece (sensing area) changes the flux of the magnetic field, dynamically
changing its strength. This change in magnetic field strength induces a current into a coil winding which is
attached to the output terminals. The output signal of a VRS sensor is an ac voltage that varies in amplitude
and wave frequency as the speed of the monitored device changes, and is usually expressed in peak to peak
voltage
Magnetic Position Sensors
MAGNETIC SPEED SENSORS

28
MAGNETIC POSITION SENSOR

29
 Magnetic Sensor Applications
• Gear Tooth Sensor
• A gear tooth sensor is a magnetically biased Hall effect
integrated circuit to accurately sense movement of ferrous metal
targets.

30
Applications
Gear Tooth Sensor

31
 Applications
• Gear Tooth Sensor

• As a gear tooth passes

by the sensor face, it
concentrates the
magnetic flux from the
bias magnet.

• The sensor detects the change in flux level and translates it into a change in
the sensor output.
• The current sinking (normally high) digital output switches between the
supply voltage and saturation voltage of the output transistor.
32
Hall Effect Based Temperature and Pressure
Senor
• In this example, an increase and/or
decrease in temperature causes the
bellows to expand or contract, moving
the attached magnet.

• The corresponding change in magnetic

field is sensed by the Hall effect sensing
device.

• The end result is conversion of the

temperature input to a measurable
electrical field.

33
 Hall Effect Based RPM Counter
• The sensor consists of a ring magnet on the motor shaft and a radially-
mounted digital output Hall effect sensor.
• As the ring magnet rotates with the motor, its south pole passes the sensing
face of the Hall sensor with each revolution.
• The sensor is actuated when the south pole approaches the sensor and de-
actuated when the south pole moves away.
• Thus, a single digital pulse will be produced for each revolution.

34
Hall Effect Based Position Detector

35
 Antiskid Sensor

• Figure shows a possible solution

for controlling the braking force
of a wheel so that it doesn’t
lock-up.

• A biased Hall effect sensor is

used.

• The sensor is positioned to

sense an internal tooth gear.

• The gear could be the disk

brake hub.
36
 Door interlock and ignition sensor
• A sensor is positioned so that a magnet rotates by it when the key
is turned in the door lock.

37
 Level/tilt measurement sensor
• Digital output unipolar sensor
can be installed in the base of a
machine with a magnet
mounted in a pendulum fashion
as illustrated in Figure.

• As long as the magnet remains

directly over the sensor, the
machine is level.

• A change in state of the output

as the magnet swings away from
the sensor is indication that the
machine is not level.
38
 Throttle angle sensor
• The arm of the throttle is contoured to provide the desired non-
linear characteristics.

• The magnet is mounted on the choke lever.

39
Automotive sensors

40
Applications for Hall Effect IC Switches in
Portable Electronics

41
MAGNETIC SENSOR APPLICATIONS

42
VR SENSOR NOISE

43
NOISE RECTIFICATION

44