MOSFET

CHARACTERISTIC
CMOS
Circuit Design, Layout, and Simulation
Third Edition
R. Jacob Baker
Chapter 6
 MOSFET Characteristics MOSFET
Operation
6.2 The Threshold Voltage
• 6.4 SPICE Modeling of the MOSFET
• In this section we list the level 1, 2, and 3 SPICE model parameters.
The level 1 model is a subset of the level 2 and 3 models which have
more elaborate mobility modeling.
• All three models are based on Eq. (6.42). A level 3 model for a long-
channel CMOS process is also presented.
Using Eq. (6.19), we can calculate the threshold voltage, VTHN , given the above
parameters. If VTHN0 or γ are not given, then SPICE calculates them using the above
information and Eqs. (6.19) - (6.21).
TPG specifies the type of gate material: 1 opposite to substrate, - 1 same as
substrate, and 0 for aluminum gate.
 M. MOSFET
Symbol Names: NMOS, NMOS3, PMOS, PMOS3. There are two fundamentally
different types of MOSFETS in LTspice, monolithic MOSFETs and a new vertical
double diffused power MOSFET model.
• Monolithic MOSFET:
Syntax: Mxxx Nd Ng Ns Nb <model> [m=<value>] [L=<len>] [W=<width>] +
[AD=<area>] [AS=<area>] [PD=<perim>] [PS=<perim>] [NRD=<value>]
+ [NRS=<value>]

• M1 Nd Ng Ns 0 MyMOSFET
.model MyMOSFET NMOS(KP=.001)

• M1 Nd Ng Ns Nb MypMOSFET
.model MypMOSFET PMOS(KP=.001)
• Monolithic MOSFETS are four terminal devices. Nd, Ng, NS, and Nb are the
drain, gate, source, and bulk; i.e., substrate; nodes.
• L and W are the channel length and width, in meters. AD and AS are the
areas of the drain and source diffusions, in square meters. Note that the suffix
u specifies μm and p square μm.
• If any of L, W, AD, or AS are not specified, default values are used. PD and PS
are the perimeters of the drain and source junctions, in meters.
• NRD and NRS designate the equivalent number of squares of the drain and
source diffusions; these values multiply the sheet resistance RSH specified on
the .MODEL control line. PD and PS default to zero while NRD and NRS to
one.
• The DC characteristics of the level 1 through level 3 MOSFETs are defined
by the device parameters VTO, KP, LAMBDA, PHI and GAMMA. These
parameters are computed if the process parameters(NSUB, TOX,...) are
given, but user-specified values always override.
• VTO is positive (negative) for enhancement mode and negative (positive)
for depletion mode N-channel (P-channel) devices.
• The thin-oxide charge-storage effects are treated slightly different for the
Level=1 model. These voltage dependent capacitances are included only if
Tox is specified.

• CLM Channel Length Modulation

* MOS OUTPUT CHARACTERISTICS
VDS 3 0 0
VGS 2 0 0
M1 1 2 0 0 MOD1 L=4U W=6U AD=10P AS=10P
* VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT ID WOULD BE NEGATIVE
VIDS 3 1
.MODEL MOD1 NMOS VTO=2 NSUB=1.0E15 UO=550
.DC VDS 0 5 .5 VGS 0 5 1
.END
 VSD S D 0
VSG 2 0 0
M2 1 2 0 0 MOD1 L=4U W=6U AD=10P AS=10P
• * VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT ID WOULD BE
NEGATIVE
VIDS 3 1
.MODEL MOD1 NMOS VTO=2 NSUB=1.0E15 UO=550
.DC VDS 0 5 .5 VGS 0 5 1
.END
END