ADVANCED SOLID STATE PHYSICS

LAB
PRESENTATION BY : LAKSHAY BHARDWAJ
ROLL NO :19056762018
COLLEGE :RAMJAS COLLEGE

AIM : To Study UV –Vis- Absorption

Spectra Of a Semiconductor Sample And
Determine Direct And InDirect Band Gap
Using Tauc plots
UV –Vis
SpectroPhotometer :

Theory :
* In Ultraviolet-visible light (UV-vis) spectroscopic, light absorption is
measured as a function of wavelength. The spectrum provides information about
electronic transitions occurring in the material

* For semiconductors, UV-vis spectroscopy offers a convenient method of

estimating the optical band gap, since it probes electronic transitions between the
valence band and the conduction band. The optical band gap is not necessarily
equal to the electronic band gap, which is defined as the energy difference between
the valence band minimum (VBM) and the conduction band maximum (CBM)

* UV-vis allows for the characterization of this electronic transition as either direct
or indirect and whether it is allowed or forbidden.

.
 BLOCK DIAGRAM

SOURCE : XENON LAMP (WHITE LIGHT SOURCE )

Semiconductor Sample :Zinc Oxide Powder (ZnO)

 TAUC
PLOT
A Tauc plot is used to determine the optical bandgap,
or Tauc gap, in semiconductors. The Tauc gap is often
used to characterize practical optical properties of 
Eg
amorphous materials.

 A Tauc plot shows the quantity hν (the energy of the light) on the abscissa and the
quantity (αhν)^1/r on the ordinate, where α is the absorption coefficient of the material. The
value of the exponent r denotes the nature of the transition:[4]

 r = 1/2 for direct allowed transitions

 r = 3/2 for direct forbidden transitions.
 r = 2 for indirect allowed transitions
 r = 3 for indirect forbidden transitions
 The resulting plot has a distinct linear regime which denotes the onset of absorption. Thus,
extrapolating this linear region to the abscissa yields the energy of the optical band gap of the
material.
GRAPHS :

Transmission Vs Wavelength
100
90
80
70
60
50
T
40
30
20
10
0
200 250 300 350 400 450 500
Wavelength (nm)
 Absorption Vs Wavelength
5

4.5

3.5

α 2.5

(1/Cm)
2

1.5

0.5

0
200 250 300 350 400 450 500

Wavelength (nm)
 Reflectivity Vs Wavelength(nm)

1200

1000

800

R 600

400

200

0
200 300 400 500 600
Wavelength (nm)
 TauC plot for r=1/2(for Direct Band Gap)
300

250
Band Gap
Eg : 3.23 eV
200
(α*Hv)^2

150

100

50 Eg

0
2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75
Hv Energy (eV)
 TauC plot for r=2 (for Indirect Band Gap)

5
4.5
4
Band Gap
3.5 Eg : 3.12 eV

(α*Hv)^1/2 3
2.5
2
1.5
1
Eg
0.5
02 2.15 2.3 2.45 2.6 2.75 2.9 3.05 3.2 3.35 3.5 3.65 3.8 3.95 4.1 4.25 4.4 4.55 4.7 4.85 5

Hv Energy (eV)
 Ts=10^(- α/2.303)*100 Ts : Percentage Transmittance
α : Absorption(1/cm)
n=1/Ts+1/(Ts-1)^(0.5) n: Refractive Index

Refractive Index Vs Wavelength(nm)

3.5

2.5

2
n 1.5

0.5

0
200 250 300 350 400 450 500 550 600 650 700 750 800
Wavelength (nm)
Calculations :

Damping Constant (k) : k=(α*L/4*pi)

α : Absorption: (1/cm)
L : wavelength(nm)

. At wavelength (L) = 237(nm)

Corresponding Values of α(=4.43 ) and n was taken from Data then :
k=0.083 Damping Constant(k)
n=3.142 Refractive Index(n)

E1 = n^2-k^2 = 9.86 Where E1 & E2 are ReaL and Imaginary

E2 = 2*n*k = 0.52 part of Complex Dielectric Constant
 Results:
The Absorption, Transmission, Reflectivity and Tauc plots were obtained.

Band Gap From Tauc Plot : Direct BandGap InDirect BandGap

3.23 eV 3.12 eV

The material is direct band gap Semiconductor (See Remarks)

Damping Constant (K) :0.083

Refractive Index(n) : 3.142
Complex Dielectric Constant : E1 = 9.86
E2 =0.52
Remarks :
In Order To Determine about Whether Given Sample is Direct Or Indirect Band Gap
Semiconductor Is By first Plotting Tauc Plot for Direct Band Gap If resultant plot is having
Linear region then its Direct Band Gap Semiconductor Otherwise Plot it for Indirect
BandGap Semiconductor