DR. IAN MUNRO ROSS & G.

C DACEY
- Jointly developed an experimental procedure for measuring the
characteristics of FET in 1955
FET being is a Unipolar device. Based on the majority carrier (Current flows due to Majority
carrier)
FET that can be operated to enhance the width of the channel i.e. it can have enhancement-mode
 A JFET is a three terminal semiconductor device in which current flows is by one type of carrier i.e.
electrons or holes.
 The current flows is controlled by means of an electric field between the gate & the conducting
channel of the device.
 A JFET consists of a p-type or n-type silicon bar containing two pn junctions at the sides as shown
 The bar forms the conducting channel for the charge carriers.
 If the bar is of p-type, it is called p-channel , if the bar is of n-type, it is called n-channel JFET
 The two pn junctions forming diodes are connected internally and a common terminal called gate is
taken out. JFET can only be operated in the depletion mode.
Two types of JFET
1.n-channel
2.p-channel

 n-channel is more widely used.

 JFET OPERATING CHARACTERISTICS

JFET is always operated with the

gatesource PN junction reversed
biased.

Reverse biasing of the gate source

junction with the negative voltage
produces a depletion region along
the PN junction which extends into
the n-channel and thus increases its
resistance by restricting the channel
width as shown in the preceding
figure.
REGIONS OF JFET ACTION
1. Ohmic Region – linear region
JFET behaves like an ordinary resistor
2. Pinch Off Region
Saturation or Amplifier Region
JFET operates as a constant current device because
I d is relatively independent of Vds
Idss – drain current with gate shorted to source.
3. Breakdown Region
If Vds is increased beyond its value corresponding
to Va – avalanche breakdown voltage.
JFET enters the breakdown region where Id
increase to an excessive value.
4. Cut Off Region
As Vgs is made more and more negative, the gate
reverse bias increases which increases the thickness

of the depletion region.

As negative value of Vgs is increased, a stage comes
when the 2 depletion regions touch each other.
Vgs (off) = -Vp
If the bar is of p-type, it is called p-channel if the bar is
of n-type, it is called n-channel JFET
The two pn junctions forming diodes are connected
internally and a common terminal called gate is taken
out.
JFET can only be operated in the depletion mode.
Characteristics of
JFET