Professional Documents
Culture Documents
A Al
p A
B B
One-dimensional
representation diode symbol
hole drift
electron drift
Charge
Density
+ x (b) Charge density.
Distance
-
Electrical
Field x (c) Electric field.
V
Potential
(d) Electrostatic
x potential.
-W 1 W2
pn (W2)
pn0
Lp
np0
-W1 0 W2 x
p-region n-region
diffusion
pn0
np0
-W1 0 W2 x
p-region n-region
diffusion
ID = IS(eV D/T – 1) ID
+ +
+
VD VD VDon
–
– –
ID (A)
0
–0.1
–25.0 –15.0 –5.0 0 5.0
VD(V)
Avalanche Breakdown
RS
VD ID CD
VGS VT |VGS|
R on
S D
D D
G G
S S
G G B
S S
n+ n+
n-channel Depletion
Region
p-substrate
0.85
0.8
0.75
0.7
VT (V)
0.65
0.6
0.55
0.5
0.45
0.4
-2.5 -2 -1.5 -1 -0.5 0
VBS (V)
Resistive Saturation
4
VGS= 2.0 V
ID (A)
3 Quadratic
VDS = VGS - VT Relationship
2
VGS= 1.5 V
1
VGS= 1.0 V
0
0 0.5 1 1.5 2 2.5
VDS (V)
n+ –
V(x)
+ n+
L x
p-substrate
D
S
- +
n+ VGS - VT n+
Pinch-off
VGS= 2.5 V
Early Saturation
2
VGS= 2.0 V
1.5
ID (A)
Linear
1
VGS= 1.5 V Relationship
0
0 0.5 1 1.5 2 2.5
VDS (V)
5
sat
Constant velocity
VGS= VDD
Short-channel device
5
2
4 linear
quadratic 1.5
ID (A)
ID (A)
3
1
2
0.5
1
quadratic
0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
VGS(V) VGS(V)
-4 -4
x 10 x 10
6 2.5
VGS= 2.5 V
VGS= 2.5 V
5
2
Resistive Saturation
4 VGS= 2.0 V
VGS= 2.0 V 1.5
ID(A)
ID(A)
3
VDS = VGS - VT 1 VGS= 1.5 V
2
VGS= 1.5 V
0.5 VGS= 1.0 V
1
VGS= 1.0 V
0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
VDS(V) VDS(V)
S D
-0.2
VGS = -1.5V
-0.4
ID (A)
VGS = -2.0V
-0.6 Assume all variables
negative!
-0.8
VGS = -2.5V
-1
-2.5 -2 -1.5 -1 -0.5 0
VDS (V)
RR0
0
VVDS
DS
VVDD/2
DD/2
VVDD
DD
5
Req (Ohm)
0
0.5 1 1.5 2 2.5
VDD (V)
CGS CGD
S D
Source Drain
W
n+ xd xd n+
Gate-bulk
Ld
overlap
Top view
Gate oxide
tox
n+ L n+
Cross section
CG C
WLC ox
WLC ox C G CS = CG CD
CGC B
2
VG S
Side wall
Source
W
ND
Bottom
xj Side wall
Channel
LS Substrate N A
VT VT
VDS
L
Linear qVGS
-4
10
I D ~ I 0e nkT
-6
10 Quadratic
ID (A)
-8
10
-10 Exponential
10
-12 VT
10
0 0.5 1 1.5 2 2.5
VGS(V)
Polysilicon gate
Drain
contact
G LD
VGS,eff
W
S D
RS RD
Drain