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3. Drain conductance,
𝑔𝑑=
( )
𝜕 𝐼𝐷
𝜕 𝑉 𝐷𝑆 𝑉 𝐺𝑆
=
Δ𝐼𝐷
Δ𝑉 𝐷𝑆
, 𝑤𝑖𝑡h 𝑉 𝐺𝑆 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
4. Amplification factor,
𝜇=−
( )
𝜕 𝑉 𝐷𝑆
𝜕 𝑉 𝐺𝑆 𝐼𝐷
=−
Δ 𝑉 𝐷𝑆
Δ 𝑉 𝐺𝑆
, 𝑤𝑖𝑡h 𝐼 𝐷 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
Relationship among FET parameters or Relation between
𝐼 𝐷 = 𝑓 ( 𝑉 𝐷𝑆 ,𝑉 𝐺𝑆 )
Using Taylor’s theorem by considering fractional change in
( ) ( ) ( ) 𝝁=𝒓
𝜕 𝐼𝐷 𝜕 𝐼𝐷 𝛛𝑰𝑫 𝜇
Δ 𝐼 𝐷= Δ 𝑉 𝐷𝑆 + 𝚫 𝑽 𝑮𝑺 𝒈 𝒎 = = 𝑔𝑚
𝑟𝑑
𝜕 𝑉 𝐷𝑆 𝑉 𝐺𝑆 𝜕𝑉 𝐺𝑆 𝑉 𝐷𝑆 𝛛 𝑽 𝑮𝑺 𝑽 𝑫𝑺
× 𝒈𝒎
Δ 𝐼𝐷
( ) (𝚫 ) ( )
𝜕 𝐼𝐷 𝜕 𝐼𝐷
(𝛛 )
Δ𝑉 𝐷𝑆 𝒅
𝛛 𝑽 𝑫𝑺
= + 𝒓 𝒅=
𝚫 𝑽 𝑮𝑺 𝜕 𝑉 𝐷𝑆 𝑉 𝐺𝑆 𝑽 𝑮𝑺 𝜕 𝑉 𝐺𝑆 𝑉 𝐷𝑆 𝑰𝑫 𝑽 𝑮𝑺
(𝛛 )
Δ 𝐼𝐷 𝛛 𝑽 𝑫𝑺
If is constant, =0 𝝁=−
Δ 𝑉 𝐺𝑆 𝑽 𝑮𝑺 𝑰𝑫
0=
(
𝛛 𝑰𝑫
𝛛 𝑽 𝑫𝑺 ) (
𝑽 𝑮𝑺
𝚫 𝑽 𝑫𝑺
𝚫 𝑽 𝑮𝑺)(
+
𝛛 𝑰𝑫
𝛛 𝑽 𝑮𝑺 )𝑽 𝑫𝑺
0=
( )
𝟏
𝒓𝒅
(− 𝝁 ) + 𝒈𝒎
𝟐 Shockley gives the equation of
Show that𝒈 𝒎 =|𝑽 | √ 𝑰 𝑫𝑺 × 𝑰 𝑫𝑺𝑺 drain characteristics2as:
𝑷
𝐼 𝐷𝑆
𝐼 𝐷𝑆𝑆 (
= 1−
𝑉 𝐺𝑆
𝑉𝑃 )
Characteristic is parabolic This resembles equation of
Decreasing the gate voltage parabola
from zero till is reduced to Equation of Parabola is given as
2
zero 𝑦 =𝑥
( )
2
𝑉 𝐺𝑆
𝐼 𝐷𝑆 =𝐼 𝐷𝑆𝑆 1−
𝑉𝑃
( ) ( )
2 2
𝑉 𝐺𝑆 𝐼 𝐷𝑆 𝑉 𝐺𝑆
𝐼 𝐷𝑆 =𝐼 𝐷𝑆𝑆 1− = 1−
𝑉𝑃 𝐼 𝐷𝑆𝑆 𝑉𝑃
√ ( )
Differentiating above equation with 𝐼 𝐷𝑆 𝑽 𝑮𝑺
respect to , = 𝟏−
𝐼 𝐷𝑆𝑆 𝑽𝑷
( () )
√
𝜕 𝐼 𝐷𝑆 𝑉 𝐺𝑆 1
=¿𝐼 𝐷𝑆𝑆 ×2 1− − 2 𝐼 𝐷𝑆𝑆 𝑰 𝑫𝑺
𝜕 𝑉 𝐺𝑆 𝑉𝑃 𝑉𝑃 ∴ 𝑔𝑚 =−
𝑉 𝑃 𝑰 𝑫𝑺𝑺
2 𝐼 𝐷𝑆𝑆
(
𝑉 𝐺𝑆
)
√
¿− 1− 𝟐
𝑉𝑃 𝑉𝑃 2 𝑰 𝑫𝑺𝑺 × 𝑰 𝑫𝑺
∴ 𝑔𝑚 =
∵ 𝑔𝑚 = (
𝜕 𝐼 𝐷𝑆
𝜕 𝑉 𝐺𝑆 )
𝑉 𝐷𝑆 ¿
−𝑉 𝑃
2
−𝑉 𝑃 √
𝑰 𝑫𝑺𝑺
𝐼 𝐷𝑆𝑆 × 𝐼 𝐷𝑆
𝑔 𝑚=−
2 𝐼 𝐷𝑆𝑆
𝑉𝑃
𝟏−
𝑽𝑷(
𝑽 𝑮𝑺
) 𝒈𝒎=
𝟐
|𝑽 𝑷|
√ 𝑰 𝑫𝑺 × 𝑰 𝑫𝑺𝑺
( ) ( )
2
𝟐 𝑰 𝑫𝑺𝑺 𝑉 𝐺𝑆 𝐼 𝐷𝑆 𝑉 𝐺𝑆
𝑔 𝑚=− 1− = 1−
𝑽𝑷 𝑉𝑃 𝐼 𝐷𝑆𝑆 𝑉𝑃
√
Let when
𝑔 𝑚 0=−
2 𝐼 𝐷𝑆𝑆
(
1−
0
)
𝐼 𝐷𝑆
𝐼 𝐷𝑆𝑆
= 1−
(𝑉 𝐺𝑆
𝑉𝑃 )
√
𝑉𝑃 𝑉𝑃
2 𝐼 𝐷𝑆𝑆 𝐼 𝐷𝑆
𝟐 𝑰 𝑫𝑺𝑺 ∴ 𝑔𝑚 =−
𝑔 𝑚 0=− 𝑉 𝑃 𝐼 𝐷𝑆𝑆
√
𝑽𝑷 2
2 𝐼 𝐷𝑆𝑆 × 𝐼 𝐷𝑆
∴ 𝑔𝑚 =
𝑔 𝑚=𝒈𝑚 0
( 1−
𝑉 𝐺𝑆
𝑉𝑃 ) −𝑉 𝑃
2
𝐼 𝐷𝑆𝑆
√
√
¿ 𝐼 𝐷𝑆𝑆 × 𝐼 𝐷𝑆
𝐼 𝐷𝑆 −𝑉 𝑃
𝑔 𝑚=𝒈𝑚 0 𝟐
𝐼 𝐷𝑆𝑆 𝒈𝒎= √ 𝑰 𝑫𝑺 × 𝑰 𝑫𝑺𝑺
|𝑽 𝑷|