UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion Notes: Large-signal PMOS

behavior EE 105 Prof. Wu Spring 2008

Large signal PMOS behavior (long-channel)

Figure 1 shows a PMOS transistor with the source, gate, and drain labeled. Note that ID is dened to be owing from the source to the drain, the opposite as the denition for an NMOS. As with an NMOS, there are three modes of operation: cuto, triode, and saturation. I will describe multiple ways of thinking of the modes of operation of a PMOS. Ill only focus on long-channel devices in these notes, but everything can easily be generalized to short-channel devices. ID S G VG + D + V S

Figure 1: PMOSFET Note rst that for a PMOS, the following equations generally hold for the devices and modes of operation we care about: VT H < 0 VGS < 0 VDS < 0 VDSat = VGS VT H < 0 This is in contrast to the behavior of an NMOS, which typically has all of these voltages as positive values. Also note the following denitions (you should know these by know, but just in case): VGS VG VS VDS VD VS VSG VS VG VSD VS VD All of the following ways of formulating the large-signal equations for PMOSFETs are completely equivalent. Use whichever you feel most comfortable with.

1.1

Method A

For this method, I will describe the PMOS behavior in terms of VGS , VDS , and VT H . 1

Cuto VGS > VT H ID = 0 Triode VGS < VT H VDS > VGS VT H = VDSat ID = p Cox W VDS (VGS VT H ) VDS L 2
VDS 2

Note that since VDS > VGS VT H (and both values are negative), the term (VGS VT H ) negative. However, since VDS is also negative, the current ID is positive. Saturation VGS < VT H VDS < VGS VT H = VDSat 1 W 2 ID = p Cox (VGS VT H ) [1 (VDS VDSat )] 2 L

is

Note that VGS VT H is negative, but since we square it, the term ends up being positive. Also note that since VDS < VDSat (and both values are negative), the term multiplied by is negative, so the minus sign makes the last term positive. Thus, ID is positive.

1.2

Method B

This method involves ipping the subscripts of the voltages VGS and VDS and ipping the signs of VT H and VDSat . That means well use the positive voltages VSG and VSD and the negative voltages VT H and VDSat in the large signal equations. Cuto VSG < VT H ID = 0 Triode VSG > VT H VSD < VSG + VT H ID = p Cox Saturation VSG > VT H VSD > VSG + VT H 1 W ID = p Cox (VSG + VT H )2 [1 + (VSD + VDSat )] 2 L VSD W (VSG + VT H ) + VSD L 2

1.3

Method C

Here, we use all positive voltages, some with ipped subscripts, some with absolute value signs: VSG , VSD , |VT H |, and |VDSat |. 2

Cuto VSG < |VT H | ID = 0 Triode VSG > |VT H | VSD < VSG |VT H | ID = p Cox Saturation VSG > |VT H | VSD > VSG |VT H | 1 W 2 ID = p Cox (VSG |VT H |) [1 + (VSD |VDSat |)] 2 L VSD W (VSG |VT H |) + VSD L 2

1.4

Method D

Finally, we can use all positive voltages but modied entirely with absolute value signs: |VGS |, |VDS |, |VT H |, and |VDSat |. Note that these formulas are identical to the NMOS formulas aside from the absolute value signs and the usage of hole mobility (p ) rather than electron mobility (n ). Cuto |VGS | < |VT H | ID = 0 Triode |VGS | > |VT H | |VDS | < |VGS | |VT H | ID = p Cox Saturation |VGS | > |VT H | |VDS | > |VGS | |VT H | 1 W 2 ID = p Cox (|VGS | |VT H |) [1 + (|VDS | |VDSat |)] 2 L W |VDS | (|VGS | |VT H |) + |VDS | L 2