Professional Documents
Culture Documents
) (Interface .
.
:Solid-Solid Interface(1
.
:
.a ):(Electronic Industry
.
.b ):(Catalytic Processes
. Rh
ZnO :
Rh ZnO
:
:Solid-Liquid Interface(2 :
H+ OH-
H+ .
:
H2 O2 ) (H
20% G
) ( G0= nFE0 90% .
.b / )(Electrolyte/Semiconductors
1 3
)(Hole
. .
.
.c/ )(Solid/Nonelectrolyte
.
Reactive
. ) (Wetting ) (Spreading
.
(3/ )(Solid/Gas Interface
Metal Oxidation.a
Tarnishing .b
Ni/Al2O3
)CO + 3 H2 (g
1000 K
1000 K
CH4 + H2O
H2 CO .
:
Fe2O3/CuO
)(water-gas shift
)CO2(g) + H2 (g
CO(g) + H2O
CO2 H2 CO2
CO2 . CO2
CO2 .
:
Ag Cu .
(4/)(Liquid/Liquid Interface
Extraction
Spreading
(1 : )PT (V ) (Interface
(2 :
(3 :
)(Bulk
IR
Surface to Bulk atomic ratio are very small.(1
107
(107)3=1021 61014 .
S/V=61014/1021=610-7
IR
107 .
. 10000 :
S/V=6108/1012=610-4
1000 .
.
Surface gets dirty very quickly.(2
P
2mkT
1/ 2
. C 1 P 8kT
=
=
4
4 kT m
ZW
2010-20 m2 2010-202.71016=0.0056
m2 19
.
Surface Structures are unknown.(3
.
How are the surface & bulk properties related?(4
bulk .
What Properties of solid does control the catalytic activity & selectivity?(5
) (Q d
.
.
Nature of adsorption
:
(1 Physisorption
(2 Chemisorption
:
. :
.a )(Permanent Dipole
.b )(Induced Dipole
.c )(Quadrupole
) (Adsorbate ).(Adsorbent
.
.
7
:
. :
.a )(Electronic Interaction
.b )(Exchange & Sharing of electrons
.
.
. G=H-TS
G <0 . S
) (. H .
.
:
:H2
H2/D2 .
(
CO
1 M2 S
. x M2
y .
. 2
Q .
Rossington Eley IB
81 kcal/mol )(
13 kcal/mol . 3
. A B
.
8 kcal/mol ) 2Qa-D(H-H Qa
) D(H-H H2 .
Desorption
10
:3
11
Ea(ads)~5 kcal/mol :
3
.
x A
B . x min.
y
.
) (Cu :
12
.
5 :
:
(1 M2 (S-M)y
(S-M)x .
(2 M2 (S-M)y
13
(3 M2
.
.
(S-M)y
).
(.
6
:
14
) (. ABXEF.
:1
.
:2 :
.1 -
.2
.3 ) (.
.4
15
:
:
.1 : .
.2 : .
.3 :
.
:
:
.
. 2
:
Surface Coverage
16
) (1- .
) (1-
rads = k ads (1 ) P
kads P ) (1-
.
:
ka kd K
.
:
( :
= KP
( :
=1
17
: A B PA PB
.
. :
ka(A)PA(1-A-B ) = k d(A).A
)r ads(A)=r des(A
ka(B)PB(1-A-B) = k d(B).B
)r ads(B)=r des(B
- A B :
A=KAPA/1+KAPA+KBPB
B=KBPB/1+KAPA+KBPB
A=KAPA/KBPB~0
)KA=ka(A)/kd(A
)KB=ka(B)/kd(B
KB>>KA PB>>PA :
B A .
n :
A=KAPA/1+KiPi
18
:
:
:
Surface is homogenous .a
.
:
.
K
K
. :
O
W
O
O
.
.
.
19
20
: .
Vm 1/Vm .
.
21
:
) ( :
.
.
.
. .
22
.
.
)
( .
H Isosteric heat of adsorption :
23
:
:
) ( ) ( ~1
.
:
) c0 mg/lit (ppm
) Ce ( .
qe :
qe=(C0-Ce)V/W
:V
:W
)1/qe=1/qm+(1/KLqm)(1/Ce
24
) R ( :
RL=1/1+KL.C0
:C0 )(mg/lit
:KL )(lit/mg
RL: .
unfavorable adsorption.
Linear adsorption.
favorable adsorption.
Irreversible adsorption.
RL>1
RL=1
0<RL<1
RL=0
:
.
.
25
N I :
) N(Q :
a Q :
26
:1
) N(Q Q :
Q=0 H
P .
:2
:
qe =KF.Ce1/n
Lnqe= LnKF + (1/n)LnCe
KF: Constant that related to bonding energy.
1/n: indicating adsorption intensity or the surface heterogeneity.
27
- -)(B.E.T
Emmette .
I II III .
28
:
. . BET Langmuir .
. . ) (
.
.
) heat of
(liquidification .
. -
)( .
BET .
29
a2b1a1 b2 .
a1b2/a2b1 :
H1 HL
) (net heat of adsorption HL
.
Hill J. Chem. Phys. 1948, 14, 263
:
a1b2/a2b1 1
1 .
30
-
a1b2/a2b1 1
.
BET .
:1
I BET ) (.
II .
:2
C
C~1
.
Slygin-Frumkin :Temkin
) N(Q N(Q)=Q+
:
31
H .
:
:
BET :
Langmuir : chemisorption & Physisorption
Freundlich : chemisorption & Physisorption
Temkin: chemisorption
BET: multilayer Physisorption
32
:
Redlich-Peterson isotherm:
Dubinin-Radushkevich isotherm:
) (DR
.
. :
:K
:Qm
:
)=RT(1+1/Ce
Lnqe 2) K (mol-2 kg-2 Qm
) (mg/gr . ) (E
:
33
-:
UHV
. 10-2 Torr 10-3 3
10-8 .
4 . -
:
(V2)2 13 4 .
2 1 1 2 . 2 1
.
. . P1
V
:
Rotary Pump
Mcleod gauge
34
3
4
4 . .
Peq .
:neq Peq
: .
.
35
(1 I . II
. I . III
. IV V
. I P0
.
P0 . II III P0
. IV V
.
(2 :
36
Macropores
Mesopores
Micropores
)(>50 nm
)(2-50 nm
)(<2 nm
Type II
Type IV
Type I
) --(
) -(
) -(
Type III
Type V
) (
) (
------
(3 qads
. - . Hads=N.qads
. Hads
) (repulsive lateral interaction Hads
.
(4 .
:
( .
( .
( Anealing 50% 80%
.
. .
.
37
( HeNeArKr .
:
( ) etching ( :
.
( H2 .
( O2 .
( ) PVD.(CVD
38
(1 CO Charcoal 273K .
. Ka .
1 .
700
46.1
600
41.6
500
36.9
400
31.5
300
25.5
200
18.6
100
10.2
)P(torr
)V(cm3
:
=V/Vm=KP/1+KP
P/V=P/Vm+1/KVm
(2 :
700
48
600
45.5
500
40
400
34.1
300
27.3
200
19.3
100
10.3
)P(torr
)V(cm3
K=7.410-3
Vm=150 cm3
39
(3 CO TiO2 . :
250
73.9
240
63.5
230
54
220
45.2
200
30
210
37.1
)T(K
)P(torr
KP=/1-
LnK+LnP=Ln /1-
d LnK/dT+dLnP/dT=0
/RT2
dLnP/dT=-dLnK/dT=-H
(4 H0ads :
250
96
240
80
230
66
220
53
210
41.9
200
32.4
)T(K
)P(torr
H0=-9.0KJ/mol
40
.5 N2 TiO2 75 .
BET Vmon C .
75 P*=570 Torr 273
1 . N2 0.16 nm2 .
1204.7
1254
164.4
1146
127.7
1046
87.5
935
45.8
822
14
720
1.2
601
)P(torr
)V(cm3
1/CVm=3.410-3
C-1/CVm=1.2310-3
C=363
Vm=810cm3
V=810cm3
(6 :
204.7
950
164.4
860
127.7
790
87.5
719
45.8
649
14
559
1.2
235
)P(torr
)V(cm3
C=290
Vm=620cm3
(7
1
r=0.9979
)Lang .(P/V vs.P
Freund .(LnP vs.LnP) r=0.9969
41
zsigmondly
.
pa pd .
Mc bain .
.
) rb (
:
2v
)
rn RT
Pa = P 0 exp(+
rn<rb rn
.
. rb
.
.
42
2v
)
2nRT
Pd = P 0 exp(
rn rn < rb
Pa > Pb .
)(4
)(2
)(3
)(1
pa
. cohan
pa pd cohan
L r
.
r 2 L
43
2L r
2Lr
( 0 ) n = 2Lr
:
2Lrr
v
= n
A B :
P
2Lrr
RTLn a0 = 2Lr
v
P
)(2
v
rRT
Pa = P 0 exp(
pd
.
2v
)
rRT
Pd = P 0 exp(
:
v
rRT
)(3
Ln Pa0
P
Pd
2v
=
0
rRT
P
ln
Pd
P
P
P
= Ln ( a ) 2 d0 = ( a0 ) 2
0
P
P0
P
P
Ln
pa pd .
. 5
.
. :
44
. 1 : A
) ( 2
2rc rc
rc
pa pd ) ( 3 .
rb
2 rn
2rn 2
rb < 2rn
rb
2rn
rn
rb )( 3
. (n>1) na , a
L >> a A ) ( 3
. a
na
)(n + 1
)(3
) ( n=1 n>1
:
( Pa ) 2
P
< ( d )2
0
P0
P
45
n
Mc bain
A .
rb rn :
rn<rb<2rn rb
rb
rn
. rn
) ( 3 .
2rn
46
.2 :B
B
.
47
. 3 : C
C
.
1
P2
A 2
.
B . B
2 rn
.
48
4 : D
C
.
5 : E
C
.
49
A
.
.
2rn
rn .
.
-6
5
.
50
pa pd
.
- -
)(Surface tension & contact angle
.
.
-
.
51
.
.
: .
:
.
52
:
.
.
) ( .
:
(1 = F/2L N/m
) ( SI ) dyne/cm (cas .
.
(2 .
(3 N/m*m/m=J/m2
.
:
Contact angle
. :
53
.
:
) ( .
- - .
LG.
- SG - SL
- . .
54
SG=SL+LG* cos
)(Wetting
. 180 .
0<>180
. :
Kw=SG-SL/SL
K>1 K<-1 .
55
.
.
SG=SL+LG* cos
:
.
.
.
) (.
.
56
N
. E0 S0 .
Es :
E=NE0+AEs
N E A .
S :
S=NS0+ASs
Ss .
) ( :
As=Es-TSs
Gs :
Gs=Hs-TSs
Hs ) (
. G :
.
:
. dWs ) (A
57
: N/m2 dyne/cm2
N/m dyne/cm1
.
)
(. .
105 cal/mol :
105cal/mol=6.94*10-19 J/atom
) 1015 atoms/cm2 ( 1019 atoms/m2
6,94 J/m2 .
: ) (Hsub ) (
:
=0.16Hsub.
-
.
.
58
:
Reconstruction .
dA
dG=-SdT+VdP+ dA
dA
T,P
=dGT,P
)=(G/A
)dG=d(Gs.A
:
:
(1
(2 .
:
.A)/A)T,PdA=(Gs+A(Gs/A))dA
dGT,P= (G
Gs
:
59
dGT,P=G dA= dA
=Gs
.
) (+.
.
.
=Gs
:
(Gs/T)P = (/T)P =-Ss
=0(1-T/Tc)n
:
Tc ) ( 0
T=E
. n n 1
n 1 .
:
60
Hs=Gs+TSS=- T(/T)P
. Hs Es
s
=-T(/T)P
P,V
(/T)P .
) Gs ( .
Gs. .
:1 =(G/A)T,P
:2 T V .
.
Hs Ss ). (.
61
) (+
) .(dA<0
.
>100 mJ/m2
. .
:
) (
) ( ) ( .
.
. :
w= wd+ whyd.
hg= hgd+ hgmet.
whyd.:
hgd :
62
hgmet.:
- )
( - ) (
. -
- .
- - -
:
ow=0d+(wd+wh)-2(wd*0d)1/2
63
. .
dt . :
dA=(x+dx)(y+dy)-xy=xdy+ydx
dA
)dW=(xdy+ydx
) (dW=PdV ) * = ( :
dV=(xy).dZ
)dW=P(xy.dZ
O1ABO1A/ B /
64
O2B/ C/ O2BC
dz
dz
=(R1/x)dx ,
=(R2/y)dy ,
dy
dx
/x =dz/R1
/y =dz/R2
:
dA=PdV
(xdy+ydx)= P(x*y*dz)
: xy
(dx/x+dy/y)=P.dz
(dz/R1+dz/R2)=P.dz
P=(1/R1+1/R2)
Laplace equation
P=Pin-Pout
:
: .1
R1=R2=R , P=Pin-Pout= z /R
65
.2 :
R1=R2= , P=0 , Pin= Pout
.3 :
P=/R
R1= , R2=R ,
: .
):(Capillary
.
.
. .
90 .
66
67
)=1/2(.g.h.Rc
:
0,871 0,8 25
12 . .
)~1/2(.g.h.Rc
-3
m*(0.4*10
)m
~2*10 N/m
-2
-3
Kg/m
~1/2*0.871*10
: Rc ) ( < 90 .
h .
:
.
- ) (:
68
) (P ) (Pg .
:
Pg1 Pg2 P0 P .
P=2/r . r
r r ) (I
:
:
CCL4 20 0,9 Torr
.
) (N/m .
69
Torr
.1 :
=rhg/2Cos . =1/2rhg
.
.
. 0,02 .
.
.
h1 :
70
.2 ):(Wilhelmy
.
.
. x y W :
)Wdet-W=2(x+y)(Cos
Cos=1
Plate
.
.
.3 (Ring Method):
. .
71
F R B .
. .
.
B
. B Zuidema
Waters :
1 2 . a b :
2
S /m
a=0.7250
2
S /m
c :
C=0.04534-1.679 r/R
r .
72
b=0.09075
=mg/2r=Vg/2r
m V r
.
:
100
. 2,53 8.78*10-2 .
. 1,6694 .
73
=mg/2r
m=2.53/100=2.53*10-2 gr
)(
.
COOH OH . -
-
.
.
- :
74
.
.
.
.
.
-
.
Troube
CH2 3 .
emulsification .
.
- .
75
.
.
)(
.
.
. ) (detergent ) dispersing
(agent .
76
.
.
)( .
:
) (SS .
.
)
-(
.
77
AA BB.
:
AA BB
. i AA Ci BB
Ci .
AA BB .
10 . SS
AA BB
. A .
.
ni i
SS ) ( :
)ni=ni-(ni+ni
) (Surface exess :
i=ni/A
78
i . )
( ni
SS .
:
U=TS-PV+iini
U=TS-PV+A+ iini
=Tds+SdT-PdV-VdP+dA+Ad+ iidni+inidi
dU
) (2 :
:
dU=TdS-PdV+idni
) ( :
=TdS-PdV+ dA +idni
dU
)(4 ) (3:
SdT- VdP+ Ad+ inidi=0
=(-ni/A)di=-idi
T , P:const
) ( ) (6 :
=-1d1- 2 d2
1=( /1)T,2
1 2
. .
) (
79
=-2,1d2
2,1=-(/LnC2)T
d
.
2= 20 + RTLnC2
:
2,1=-1/RT(/ LnC2 )T
.
Hydon
.
. 1:1 2
.:
2,1=-1/2RT(/ LnC2)T
- )(Micell
.
).
(.
80
.
.
Mc Bain
.
81
(
.
.
( - ) (
.
. .
.
82
c.m.c
.
. c.m.c
83
c.m.c
:
( .
c.m.c CH2 .
. 16 c18
.
(
. .
(
c.m.c .
( c.m.c .
)
(.
c.m.c. c.m.c
c.m.c .
.
c.m.c c.m.c.
84
c.m.c .
.
c.m.c min.
.
/dc
) ( c.m.c
c.m.c
. min
. c.m.c
/da
) a ( .
c.m.c
. ) (
.
85
.
:
K= cx/m/(c(1-x))m
:c
:X
:m
G0=-RTLnK
))G0=-RT/mLnK =-RT/mLn(cx/m)+RTLn(c(1-x
c.m.c c.m.c x~0 :
)G0~RTLn(c.m.c
)S0=-(G0/T)P=-RT(dLn(c.m.c)/dT)-RLn(c.m.c
86
)H0=G0+TS0=-RT2(dLn(c.m.c)/dT
c.m.c
) ( ) (+
.
)(Krafft
.
.
. c.m.c
.
.
.
)(
)(
.
87
( ) (A .
(
. - - .
( .
) (B
) (A dA
(OA+Ow+WA)dA OA
Ow WA .
.
Initial spreading coefficient
:
88
. S .
)(
. :
WA-(OA+OW)=S
72.8-(30.0+52.1)=-9.3
-n
72.8-(21.8+50.8)=+0.2
-n
72.8-(27.5+85.5)=+36.8
-n
.
) (
OW
S . S WA
OW . -n
.
. :
Sinit.=72.8-(28.9+35.0)=+8.9 mN/m
Wa 62.4 mN/m Ow
28,8 :
89
mN/m
Sfinal=62.4-(28.8+35.0)=-1.4
.
. .
90
)(Comparison of chemisorptive bond with simple ionic band
:
.
. .
)(Free electron theory
.
) . (1
:1
) (1 :
)(1
h 2 d 2
= E
2m dx 2
) 2 (3
n x
)) , n = 1, 2,3,... (2
Na
)(3
( n ( x) = A sin
n2h2
8m( Na) 2
= En
) (Lattice points .
n 2 .
91
:2 n
E E+dE . )(Density of states
1
. E 2 . 3
.
:3
. ,
) (Fermi level Ef .
4 .
:4
92
) Ef ( Ef .
Ef ) (4
Ef
)(4
N ( E )dE
= No. of states
. Ef
. .
) (vacuum ) (work function .
.
: A
) (A+ . ) (I A
. ( I f 0) . A
) . ( p 0 A+
e2
) (image potential ) . ( * p 0
4r
:
Le 2
)) (5
* 4r
Q = ( LI L
: A
) (A- ) ( L f 0
) . ( LA0 p 0
. :
Le2
)) (6
* 4r
Q = ( L LA0
.
) ( L 90 14 . 312
Le2
333 312 . )
* 4r
93
( 50 .
1
Wm + H 2 W H
2
Q0 = +150 kcal.mol 1
. H2 H+ .
+20 .
N H O W .
. K Na Cs .W
.
: K Na Cs W
Le 2
* 4r
Qobs
Qcalc.
)44.5(1.83
32.0
30.5
104
99
)35.5(2.27
44
40.8
104 Cs/W
89
54
48.7
K/W
LI
)31.1(2.62A
.
.
O2 .
O2 .
Cl2 . O2 / Ag Cl2
Cl2 .
(Adsorption and d-bands) d
d . d
. d .
94
s . .
s s s p
p s . .
Be s p . 2s 2p .
)( s p ) (band gap
. Si Si .
. ps d
. d .
:
-1 .
) dN ( E
-2 )
dE
( .
-3 .
) dN ( E
) N(E )
dE
.
) dN ( E
) N(E )
dE
( .
Ef .
:
-1 .
) dN ( E
-2 )
dE
( .
-3 .
:
-1 .
) dN ( E
-2 )
dE
( .
-3 d .
95
:5
:6
) .(Eg
Eg . Eg ) (Eg=1ev
) .(Intrinsic semiconductor
.
Eg=10ev . .
Eg . Ge 1ev CaO Eg 10ev
. (compound
96
O2- S2- p .
. O2- S2- .
.
) (NiO 2.6ev 1.0ev
d p ) .(7
:7 NiO
) (Imperfection states
) (band gap .
.
-1 : ) -2 (donor ).(accepeter
n
) (n-type or normal semiconductor ) .( 8
ZnO . n . Eg=3.2ev
0.02ev
. . TiO2
Eg=3.0ev
0.07ev WO3 . n Eg =2.8ev
0.1ev.
97
:8 n
p
) (p-type or abnormal semiconductor ) .(9
) (hole .
NiO . p Eg=1.95ev
0.03ev.
:9 p
98
) (Fermi level .
. .
n . p
. 10
.
:10 p n
))(Imperfection(defects
.
.
.
-1 ) (point defect .
-2 ) (Line defect
.
-3 ) (Multi-dimensional defect
.
. .
99
-1 ) (Imperfect crystals
.
.( ) : (Schottky defect
)) (cation vacancy and anion vacancy.(11
:11 AB
( ) :(Frenkel defect
) (interstitial .
) .(12
:12 AB
.
.
-2
.
.
.
.
) (anion vacancy .
.
100
:13
) .(cation interstitial
) .(14
. F
x .
) (quasi-free electron . .
.
12 13 .
) (metal excess n .
.
.
.
p ) (metal deficiency .
) a 14 .(b
. ) ( ) (positive hole
101
:14 p.
p )
(
. .
. 15 M+A- .
:15 A
102