Electronic Devices Homework

Exercise 1
A homogeneous sample of a crystalline semiconductor material (T = 300 K, Eg = 0.8 eV,
Nc = 0.9Nv , ni = 1.41011 cm3 , q = 4.5, n = 2500 cm2 V1 s1 , h = 600 cm2 V1 s1 )
is uniformly doped with acceptors and shows a resistivity = 0.055 cm.
1. Determine the acceptor concentration NA in the sample assuming ND = 0 and
complete ionization of the dopant impurities.
2. Determine the free electron and hole densities at thermal equilibrium assuming
complete dopant ionization.
3. Draw the detailed band diagram of the sample at thermal equilibrium, reporting
the distance between all the relevant energies: bottom of the conduction band EC ,
top of the valence band EV , intrinsic fermi level EF i , and Fermi level EF .
4. Evaluate the semiconductor workfunction.
5. Assuming a saturation velocity vsat = 107 cm/s for both electrons and holes, determine the current density which is observed in the sample under an electric field
E1 = 5 kV/cm and E2 = 50 kV/cm.

Exercise 2
Consider a silicon p n junction with
p-side: NA = 1.51017 cm3 , n = 1500 cm2 /Vs, n = 500 ns;
n-side: ND = 51016 cm3 , h = 750 cm2 /Vs, h = 500 ns.
The physical length of each side of the junction is much larger than the corresponding
minority carrier diffusion length.
1. Draw the detailed band diagram at equilibrium.
2. Evaluate the reverse saturation current Is , assuming a junction cross-section A =
10 mm2 .
3. Evaluate the excess minority carrier densities at the edges of the depletion region
(p0 (xn ), n0 (xp )) under a forward bias VA = 0.6 V.
4. Under the same forward bias VA , write the analytical expression and draw the
profiles of the excess minority carrier densities as functions of the spatial coordinate
x in the neutral sides of the junction (p0 (x), x > xn ; n0 (x), x < xp )).
5. Under the same forward bias VA , evaluate the total current I(VA ) flowing through
the device, and determine the parameters of the small-signal equivalent circuit.