AO4606

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4606/L uses advanced trench

technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. AO4606 and AO4606L are
electrically identical.
-RoHS Compliant
-AO4606L is Halogen Free

n-channel
p-channel
VDS (V) = 30V
-30V
-6A (V GS=-10V)
ID = 6.9A (VGS=10V)
RDS(ON)
RDS(ON)
< 28m (VGS=10V)
< 35m (VGS = -10V)
< 42m (VGS=4.5V)
< 58m (VGS = -4.5V)

D1

D2
S2
G2
S1
G1

1
2
3
4

8
7
6
5

D2
D2
D1
D1

G1

G2

S1

S2

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T A=25C unless otherwise noted

Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
V
Gate-Source Voltage
20
GS

Pulsed Drain Current

TA=25C
Power Dissipation
Avalanche Current B

5.8

-5

30

-30

1.44

1.44

15

20

11

20

mJ

-55 to 150

-55 to 150

PD

TA=70C

Repetitive avalanche energy 0.1mH

IAR
B

Junction and Storage Temperature Range

EAR
TJ, TSTG

Thermal Characteristics: n-channel and p-channel

Parameter
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C
A
t 10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Lead C

Alpha & Omega Semiconductor, Ltd.

-6

ID
IDM

TA=70C
B

20

Units
V

6.9

TA=25C

Continuous Drain
A
Current

Max p-channel
-30

Symbol
RJA
RJL
RJA
RJL

Device
n-ch
n-ch
n-ch

Typ
48
74
35

p-ch
p-ch
p-ch

48
74
35

Max
62.5
110
40

Units
C/W
C/W
C/W

62.5 C/W
110 C/W
40 C/W

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N-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Min

Conditions
ID=250A, VGS=0V
TJ=55C

Gate-Body leakage current

VDS=0V, VGS=20V

Gate Threshold Voltage

VDS=VGS ID=250A

ID(ON)

On state drain current

VGS=4.5V, VDS=5V

20

VGS=10V, ID=6.9A
TJ=125C
VGS=4.5V, ID=5.0A
gFS

Forward Transconductance

VSD

IS=1A
Diode Forward Voltage
Maximum Body-Diode Continuous Current

IS

VDS=5V, ID=6.9A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge

10

100

nA

22.5

28

31.3

38

34.5

42

15.4
0.76

VGS=10V, VDS=15V, ID=6.9A

Body Diode Reverse Recovery Time

pF

6.74

8.1

4.6

trr

pF

nC

3.2

Qrr

pF

16.6

Turn-On DelayTime

Turn-Off Fall Time

820

13.84

Gate Drain Charge

tf

tD(on)

Turn-On Rise Time

Qgd

Turn-Off DelayTime

1.2

Gate Source Charge

tD(off)

m
S

77
VGS=0V, VDS=0V, f=1MHz

102

Qgs

tr

1.9

680
VGS=0V, VDS=15V, f=1MHz

1
5

IGSS

Units
V

0.002

VDS=24V, VGS=0V

Static Drain-Source On-Resistance

Max

30

VGS(th)

RDS(ON)

Typ

1.82

nC
nC
nC

ns

4.1

ns

20.6

30

ns

5.2

ns

IF=6.9A, dI/dt=100A/s

16.5

20

Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/s

7.8

10

ns
nC

VGS=10V, VDS=15V, RL=2.2,

RGEN=3

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
Rev 8: Feb 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4606
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30
10V
25

20
6V
5V
4.5V

VDS=5V

16

4V

15

ID(A)

ID (A)

20

3.5V

12
8

10
VGS=3V

125C

25C
0

0
0

0.5

60
Normalized On-Resistance

RDS(ON) (m)

1.5

2.5

3.5

4.5

1.6

50
VGS=4.5V

40
30
20

VGS=10V

10
0

10

15

1.5

VGS=10V

ID=5A

1.4
VGS=4.5V

1.3
1.2
1.1
1
0.9
0.8

20

ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

50

100

150

200

Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature

70

1.0E+01

60

1.0E+00

ID=5A

50

IS Amps

RDS(ON) (m)

VGS (Volts)
Figure 2: Transfer Characteristics

VDS (Volts)
Fig 1: On-Region Characteristics

125C

40

1.0E-01
1.0E-02

125C

1.0E-03
30

25C

1.0E-04
25C

20

1.0E-05
0.0

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body diode characteristics

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AO4606
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000

10

VDS=15V
ID=6.9A

800
Capacitance (pF)

VGS (Volts)

f=1MHz
VGS=0V

900

6
4
2

700
Ciss

600
500
400
300
200

Coss

100
0

Crss

0
0

10

12

14

Qg (nC)
Figure 7: Gate-Charge characteristics

100

25

30

TJ(Max)=150C
TA=25C

10s
Power W

ID (Amps)

20

40

10ms
0.1s
1

15

30

100s

1ms

10

10

VDS (Volts)
Figure 8: Capacitance Characteristics

TJ(Max)=150C
TA=25C

RDS(ON)
limited

1s

20

10

10s
DC
0.1
0.1

10

0
0.001

100

VDS (Volts)

Z JA Normalized Transient
Thermal Resistance

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

0.01

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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P-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=-250A, VGS=0V

-30

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS=20V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.2

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

30

TJ=55C

VGS=-10V, ID=-6A
TJ=125C

Static Drain-Source On-Resistance

VGS=-4.5V, I D=-5A

gFS

Forward Transconductance

VSD

Diode Forward Voltage

IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

IS

VDS=-5V, ID=-6A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

-1
-5

VGS=-10V, VDS=-15V, ID=-6A

VGS=-10V, VDS=-15V, RL=2.7,

RGEN=3

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Qrr

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/s

IF=-6A, dI/dt=100A/s

100

nA

-2.4

28

35

37

45

44

58

-1

-4.2

1100

pF

A
m

13
-0.76

190

pF

122
VGS=0V, VDS=0V, f=1MHz

Units

-2

920
VGS=0V, VDS=-15V, f=1MHz

Max

V
-0.003

VDS=-24V, VGS=0V

IDSS

RDS(ON)

Typ

pF

3.6

4.4

18.5

22.2

nC

9.6

11.6

nC

2.7

nC

4.5

nC

7.7

11.5

ns

5.7

8.5

ns

20.2

30

ns

9.5

14

ns

20

24

12.3

15

ns
nC

A: The value of R JA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TAA =25C. The value
JA
in anyingiven
depends
on the user's
board design.
The current
rating israting
based
the ton
the
10s tthermal
resistance
rating.
value
any aapplication
given application
depends
on thespecific
user's specific
board design.
The current
is on
based
10s thermal
resistance
B: Repetitive rating, pulse width limited by junction temperature.
rating.
C. Repetitive
The R JA israting,
the sum
of the
thermal
junction to lead RJL and lead to ambient. RJL and RJC are equivalent terms referring to
B:
pulse
width
limitedimpedence
by junctionfrom
temperature.
thermal
fromof
junction
to drain
lead.
C.
The Rresistance
the thermal
impedence
from junction to lead RJL and lead to ambient.
JA is the sum
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
pulses,
duty
cycle
0.5%
max.
80 s s
pulses,
duty
cycle
0.5%
max.
E. These tests are performed with the device mounted on 1 in22 FR-4 board with 2oz. Copper, in a still air environment with TAA=25C. The SOA
curve provides a single pulse rating.
Rev 8: Feb 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30
-10V
25

-6V
-5V

VDS=-5V

25

20

20

-4V
-ID(A)

-ID (A)

30

-4.5V

15
-3.5V

10

15
10

125C

5
VGS=-3V

25C

0
0

0.5

60

1.5

2.5

3.5

4.5

1.60
Normalized On-Resistance

55
VGS=-4.5V

50
45
RDS(ON) (m)

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

40
35
VGS=-10V

30
25
20

ID=-6A
1.40

VGS=-10V

1.20

VGS=-4.5V

1.00

15
0.80

10
0

10

15

20

25

25

100

125

150

175

1.0E+01

70

ID=-6A

60

1.0E+00
1.0E-01

50

125C

40

125C

1.0E-02

-IS (A)

RDS(ON) (m)

75

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80

50

1.0E-03

30

25C

1.0E-04

20

25C

1.0E-05
10
1.0E-06

0
3

6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

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AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500

10

VDS=-15V
ID=-6A

1250
Capacitance (pF)

-VGS (Volts)

8
6
4
2

Ciss

1000
750
500
Coss

0
0

12

16

20

-Qg (nC)
Figure 7: Gate-Charge Characteristics

10s
100s
0.1s

1ms
10ms

1s

20

25

30

TJ(Max)=150C
TA=25C

20

10
10s

DC

0.1
0.1

15

30
Power (W)

RDS(ON)
limited

1.0

10

40

TJ(Max)=150C, TA=25C

10.0

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

-ID (Amps)

Crss

250

10

100

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

0
0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=62.5C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD
0.1
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

0.01

100

1000

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