ELECTRONIC DEVICES AND CIRCUITS

BRIEF NOTES

UNIT – I :: ELECTRON DYNAMICS: CRO

 e  1.602 1019 C , m  9.1 1031 kg , ‘F’ force on electron in uniform electric field ‘E’
eE
 F=eE; acceleration a 
m
 If electron with velocity ' v ' moves in field ' E ' making an angle ' ' can be
resolved to v sin  , v cos  .
 Effect of Magnetic Field ‘B’ on Electron.
mv 2 m
 When B & Q are perpendicular path is circular r ; Period ' t ' 
Be Be
 When slant with ' ' path is # Helical.
 EQUATIONS OF CRT
lL
 ELECTROSTATIC DEFLECTION SENSITIVITY Se 
2dVa
e
 MAGNETIC DEFLECTION SENSITIVITY S m  lL
2mVa
2eV
 Velocity due to voltage V, v
m
 When E and B are perpendicular and initial velocity of electron is zero, the path is
u
Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where Q ,

E Be
u ,  .
B m

UNIT – II :: SEMICONDUCTOR JUNCTION

 Si , Ge have 4 electrons in covalent bands. Valency of 4. Doping with trivalent

elements makes ' p ' , Pentavalent elements makes ' n ' semiconductor.

 Conductivity   e  n  n  p  p  where n, p are concentrations of Dopants.

 n &  p are mobility’s of electron and hole respectively.

Diode equation

 Vd 
I d  I s  e nVT  1
 

-1-
 kT
VT  ; K= Boltzman Constant
q

Vd VT kT  N A N P 
 rd   ; Vo  ln  
I d I q  ni 2 

 T  00 C  273; q  1.602 1019 C

 Diode drop changes @ 2.2mv / 0 C , Leakage current I s doubles on 100 C

dq
 Diffusion capacitance is cd  of forward biased diode it is  I
dv

 Transition capacitance CT is capacitance of reverse biased diode V  n n  1 to 1

2 3

 RECTIFIERS

 COMPARISION

HW FW CT FW BR

VDC Vm 2Vm 2Vm

  
Vm Vm Vm
Vrms
2 2 2

-2-
 
1.21 0.482 0.482
Ripple factor


40.6% 81% 81%
Rectification efficiency

PIV Vm 2 Vm Vm
Peak Inverse Voltage

UNIT – III :: FILTERS

2Vm 4  1 1 
 Harmonic Components in FW Output, v0    cos 2 wt  cos 4 wt  .....
  3 15 
Capacitance Input Filter,

Inductor Input Filter,

Critical inductance is that value at which
diode conducts continuously, in or half cycle.

LC FILTER,

2 1.2
 or , for 50 Hz, L in H , C in  F .
12 LC
2
LC

2 X c1 X c2 Xc
LC LADDER,  . . ..... n
3 X L1 X L2 X Ln

FILTER,

RC FILTER,

-3-
 ZENER DIODE FWD Bias Normal
Diode 0.7 V Drop
Reverse Bias

 ZENER REGULATOR

Vi  Vz
 Is  ;Vi  Vz
Rs

Vz
 rz 
I z

 TUNNEL DIODE

 Conducts in
f , r , Quantum mechanical tunneling in region a-0-b-c.
b b
 -ve resistance b-c, normal diode c-d.
I p = peak current, I v = valley current; v p =peak voltage ≈ 65 mV, vv =valley voltage
0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

 VARACTOR DIODE

Used in reverse bias & as tuning variable capacitance.

Co
K CT 
 CT  ; n=0.3 for diffusion, n=0.5 for alloy junction,  1  VR 
n

 VT  VR 
n
 VT 

CB 1
 is figure of merit, Self resonance f o 
C25 2 LS CT

-4-
 PHOTO DIODES

 Diode used in reverse bias for light detection.

 Different materials have individual peak response to a range of wave lengths.

UNIT - IV

 BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC

I nE I
 Components of current are I nE , I pE at EB junction where    nE
I nE  I pE I E
I nc
   Emitter efficiency,  *  transportation factor.
I nE

 BE  f / b; BC  r / b

I e  Ib  Ic
Ic I
 ;  c
Ie Ib
Doping Emitter Highest
Base Lowest
I e  Ic  Ib

-5-
 Leakage currents : I CBO , I CEO , I EBO
 I CEO   1    I CBO

 3 Configurations are used on BJT, CE, CB & CC


 Common Emitter, VI characteristics

IC
 VCE
IB

VBE V
 Ri  hie    re ; rce  r0  ce
I B I c

Input Characteristics Circuit Output Characteristics

AC Equivalent Circuit

 COMMON BASE VI CHARACTERISTICS

-6-
 IC 
  ; 
IE 1 

VEB I Vcb
 hib   re ; h fb  C ; rcb 
I E Ie VCB
I c
AC Equivalent Circuit

AMPLIFIER COMPARISON

COMPARISON
CB CE CF

BE BC
Ri LOW MED HIGH

SATURATION f/b f/b

AI AI   1
ACTIVE f/b r/b
AV High High <1

CUT OFF r/b r/b

Ro High High low

UNIT - V
 h- parameters originate from equations of amplifier
vi  hi ii  hr v2 , i2  h f ii  h0v2
vi & ii are input voltage and current
v2 & i2 are output voltage and current
 hi  input impedance hie , hib , hic   re , re ,    1 re 

 h f  current gain h fe , h fb , h fc   ,  ,  1    
 hr  reverse voltage transfer hre , hrb , hrc
 ho  output admittance hoe , hob , hoc

 FIELD EFFECT TRANSISTOR, FET is Unipolar Device

-7-
 Construction n-Channel p-Channel

 S=Source, G=Gate, D=Drain

 GS Junction in Reverse Bias Always
 Vgs Controls Gate Width

 VI CHARACTERSTICS

Transfer Characteristics Circuit Forward Characteristics

 Shockley Equation
2
 V   V 
 I d  I dss  1  gs  , g m  g m 0 1  gs 
 Vp  Vp
   

 MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet Symbols Enhancement Mosfet

 Depletion Type MOSFET can work width Vgs  0 and Vgs  0

MOSFET JPET

High Ri  1010 108

R0  50 k   1m

Depletion Depletion
Enhancement Mode Mode
Transfer Forward
Delicate Rugged
Characteristics Characteristics

-8-
 Enhancement MOSFET operates with, Vgs  Vt , Vt  Threshold Voltage

Forward Characteristics Transfer Characteristics

VDS ( sat )  VGS  VT , I ds (ON )  K  VGS  VT 

2

JFET I D Table COMPARISIONS

Vgs ID BJT FET

0 I DSS Current controlled Voltage controlled

0.3 VP I DSS High gain Med gain

2
Bipolar Unipolar
0.5 VP I DSS
4 Temp sensitive Little effect of T
VP 0 High GBWP Low GBWP

UNIT – VI :: BIASING in BJT & JFET

 Fixing Operating Point Q is biasing

Fixed Bias Emitter Stabilized Feedback Bias

VCC  I B RB  VBE Fixed Bias VCC     1 RC I B  I B RB  VBE

VCC  I B RB  VBE     1 Re

-9-
 VCC R2
VB  ,
R1  R2
VE
VE  VB  VBE ; I C 
RE

Vcc     1  Rc  Re  Ib
 Ib.Rb  Vbe

VOLTAGE DIVIDER BIAS EMITTER STABILIZED

FIXED BIAS

STABILITY EQUATIONS

 I c  S1I c 0  S 2 VBE  S3

I C I C I S
   1
 S1  ; S2  ; S3  C , STABILITY FACTOR dI
I CO VBE  1  B
dI C
 S must be as small as possible, Most ideal value =1
dI B
 How to do determine stability factor for bias arrangement? Derive and
dI C
substitute in S
Zl
 Amplifier formulae: AV  AI , Z i measured with output shorted
Zi
 Z0 measured with input shorted
 CE amplifier A I  h fe or  ;
VT R
 Z i   re; re ; Av   L r ;
I e

R
 CB amplifier A1   ; Av  L ; Z i  re
re

; Ri   h fe  1 RE  hie
hie
 CC amplifier A I     1 ; AV  1 
Ri
 H Parameter Model CE
h fe ZL
 AI  ; AV  h fe
1  hoe zl hie

- 10 -
 RL
 CB amplifier Ri  hib ; AI  h fb ; AV  h fb .
hib
 FET
 CS amplifier AV   g m  Rd || rd  ; Z 0  Rd
Rs
 Common Gate Amplifier AV  g m Rd , Z i 
1  g m Rs
g m Rs 1
 Common Drain AV  ; Zo 
1  g m Rs gm
 RC Coupled Amplifiers
1
1   tan 1  f1 f  ; A 
 If cut off frequency f1    j  1 
, f
2 RC 1
 f
 Slope  6dB / octave, 20dB / decade , Octave= f
or 2 f
2
 f  is beta cut off frequency where h fe  falls by 0.707
 f is  cut off frequency where   0.707
 ft is h fe  1 gain bandwidth product.

UNIT – VII :: FEED BACK AMPLIFIERS

 Amplifier gain stands for any of Voltage amplifier, Current amplifier, Trans resistance
Trans admittance amplifier

A X X
Af  ; A 0 ;   f
1  A Xi X0

Xi  Xs  X f

 |1  A |  1  ve f b ,  1  ve f b

 Ve feed back amplifier depends on
 Feed back reduces noise distortion, gain variation due to parameters, increases BW.
 1  A  is called de-sensitivity factor.

 Feed back amplifiers

Voltage series, voltage shunt; Current series, current shunt

for voltage, current series

zi f  zi  1  A 
A
Af  , for all
1  A
zi
zi f  , for voltage or current shunt
1  A
zo f  zo  1  A  , for current series, shunt
z0
zo f  , for voltage series and shunt.
1  A
- 11 -
 UNIT – VIII :: OSCILLATORS

 Barkausen Criterion for oscillation loop gain =1,  =00, 3600.

 HARTLEY OSCILLATOR

1 L2
f  , LT  L1  L2  M , ;   ,
2 LT C L1
COLLPITS OSILLATOR,
L1 , L2 replaced by C1 , C2 ,
1
C replaced by L; f 
2 LCT

 CRYSTAL OSCILLATORS
 Tuned ckt replaced with Crystal

1
s  ,
LC
1
p 
LCT

 Phase shift oscillator

FET MODEL
1
f  , A  29 ,
2 6 RC
Minimum RC sections 3

BJT MODEL
1
f 
 4 R  , A  29 ,
2 RC 6   C 
 R 
Minimum RC sections 3

 Wein Bridge Oscillator

1
f  ,
2 R1 R2C1C2
- 12 -
1 1
if R1=R2=R, C1=C2=C , f  ; A 3
2 RC 
- 13 -