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P18N50C Datasheet PDF
P18N50C Datasheet PDF
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
560
RDS(on) ()
VGS = 10 V
0.225
Qg (Max.) (nC)
76
Qgs (nC)
21
dV/dt Ruggedness
Qgd (nC)
29
Improved trr/Qrr
Configuration
Single
TO-220
TO-220 FULLPAK
S
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
TO-220 FULLPAK
Lead (Pb)-free
SiHP18N50C-E3
SiHF18N50C-E3
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
30
VGS at 10 V
TC = 25 C
TC = 100 C
IDM
FULLPAK
0.3
EAS
FULLPAK
for 10 s
PD
72
1.8
TO-220
18
11
TO-220
ID
UNIT
361
223
38
dV/dt
TJ, Tstg
- 55 to + 150
300
W/C
mJ
W
V/ns
C
Notes
a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. VDD = 50 V, starting TJ = 25 C, L = 2.5 mH, Rg = 25 , IAS = 17 A.
d. ISD 18 A, dI/dt 380 A/s, VDD VDS, TJ 150 C.
e. 1.6 mm from case.
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
SYMBOL
TO-220
FULLPAK
TO-220
FULLPAK
TYP.
MAX.
62
RthJA
RthJC
65
0.56
3.29
UNIT
C/W
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 A
500
VDS/TJ
Reference to 25 C, ID = 1 mA
0.6
V/C
VGS(th)
3.0
5.0
Gate-Source Leakage
IGSS
VGS = 30 V
100
nA
IDSS
25
250
0.225
0.270
6.4
RDS(on)
gfs
VGS = 10 V
ID = 10 A
VDS = 50 V, ID = 10 A
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
2451
2942
Output Capacitance
Coss
VDS = 25 V,
300
360
Crss
f = 1.0 MHz
26
32
Rg
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 18 A, VDS = 400 V
VDD = 250 V, ID = 18 A
Rg = 7.5 , VGS = 10 V
tf
pF
1.1
65
76
21
29
80
27
32
44
18
72
1.5
503
ns
6.7
30
nC
ns
IS
ISM
VSD
trr
Qrr
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = 18 A, VGS = 0 V
TJ = 25 C, IF = IS,
dI/dt = 100 A/s, VR = 35 V
Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
70
100
VGS
15 V
60
14 V
13 V
12 V
11 V
50
10 V
9.0 V
8.0 V
40
7.0 V
6.0 V
30 Bottom 5.0 V
TJ = 25 C
TJ = 150 C
Top
20
10
TJ = 25 C
1
0.1
7.0 V
10
0
0.01
0
12
18
24
30
TJ = 150 C
7.0 V
10
0
6
12
18
24
30
40
10
VGS
15 V
14 V
13 V
12 V
30
11 V
10 V
9.0 V
8.0 V
7.0 V
20
6.0 V
Bottom 5.0 V
Top
3
2.5
ID = 17 A
2
1.5
VGS = 10 V
1
0.5
0
- 60 - 40 - 20
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
100
105
Capacitance (pF)
104
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
103
102
Coss
10
100
VGS = 0 V
0.1
1000
0.2
0.5
1.4
103
Operation in this area limited
by RDS(on)
VDS = 400 V
VDS = 250 V
VDS = 100 V
102
1.1
ID = 17 A
16
0.8
20
TJ = 25 C
Crss
10
TJ = 150 C
10
12
10
100 s
1 ms
TC = 25 C
TJ = 150 C
Single Pulse
10 ms
0.1
0
30
60
90
120
102
10
103
104
20
15
10
0
25
50
75
100
125
150
SiHP18N50C, SiHF18N50C
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-2
10-3
0.1
10
VDS
RD
VDS
90 %
VGS
RG
D.U.T.
+
- VDD
10 V
Pulse width 1 s
Duty factor 0.1 %
10 %
VGS
td(on)
tr
td(off) tf
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
QG
10 V
V DD
QGS
QGD
10 V
VG
0.01
tp
Charge
VDS
Fig. 14a - Basic Gate Charge Waveform
tp
VDD
Current regulator
Same type as D.U.T.
VDS
50 k
IAS
12 V
0.2 F
0.3 F
D.U.T.
VDS
VGS
3 mA
IG
ID
Current sampling resistors
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SiHP18N50C, SiHF18N50C
Vishay Siliconix
D.U.T
+
-
dV/dt controlled by RG
ISD controlled by duty factor "D"
D.U.T. - device under test
RG
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
Re-applied
voltage
Body diode
VDD
forward drop
Inductor current
Ripple 5 %
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91374.
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Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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