Tutorial 3:

1.

Analogue Electronics

Outline the main advantages of unipolar devices in IC technology.

2.
Identify the main difference between Bipolar and Unipolar transistor
devices.
3.
Explain how a depletion layer is formed in the channel of a JFET by the
applied
drain - source voltage and how the channel resistance varies with
this voltage.
4.
Draw the cross-sectional view of an enhancement NMOST device labelling
clearly
all the different t detections and explaining its action. Sketch the
output characteristics of NMOST.
5.
List the differences between P and N channel enhancement MOSFET
devices.
6.
using the transfer characteristics of MOSFET, define the term Tran
conductance (gm).
7.
Determine the Tran conductance (gm) for an MOST device in its saturation
region with ID (sat) =0.2 A, and Vgs= 3 V. Calculate also the drain resistor rd and
the amplification factor.
8.
A FET has a quiescent Vgs. of 3.5V and Id of 0.65 mA. The power supply is
18 V. Calculate rd assuming that the quiescent operating voltage should be
chosen to give maximum voltage swing on the output. Calculate also the
amplification factor.
9.

Explain briefly the principal disadvantage of the MOSFET devices.

10.

Discuss the importance of the channel dimensions in the MOSFET devices.