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INSULATED-GATE BIPOLAR
Insulated-Gate Bipolar Transistor
TRANSISTOR (IGBT):
• IGBT has both MOSFET and BJT features
making it useful in high-voltage and high-
current switching applications.
• It can replace MOSFET and BJT in the said
applications.
• It has the output conduction characteristics of
a BJT.
• It is voltage-controlled like a MOSFET.
• It is an excellent choice for many high-voltage
switching applications. 4/10/2018
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• Constructional Features:
• The structure of an IGBT cell is shown in Fig.
above
• The principle behind the operation of an
• The p region acts as a substrate which forms IGBT is similar to that of a power MOSFET.
the anode region, i.e., the collector region of
• The IGBT operates in two modes:
the IGBT. Then there is a buffer layer of n
region and a bipolar-base drift region. (i) The blocking or non-conducting
mode
• The p-region contains two n regions and acts
as a MOSFET source. An inversion layer can (ii) The ON or conducting mode.
be formed by applying proper gate voltage.
• The cathode, i.e., the IGBT emitter is formed
on the n source region.
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Basic Structure:
Basic Structure:
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Typical GTO
Operation Principles:
• The turn ON operation of GTO is similar to a conventional thyristor.
• This results in the emission of electrons from the cathode towards the
anode terminal. This induces the hole injection from the anode
terminal into the base region.
• This injection of holes and electrons continuous till the GTO comes into
the conduction state.
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• A part of the holes from the P base layer is extracted through the gate
which suppress the injection of electrons from the cathode.
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Advantages: Limitations:
1. Higher voltage blocking capability 1. GTOs require large negative gate currents for turn-
2. Gate has full control over the operation of GTO. off. Hence they are suitable for low power
3. Low on-state loss applications.
4. High ratio of peak surge to average current 2. Very small reverse voltage blocking capability.
5. High on-state gain. 3. Switching frequencies are very small.
Applications:
1. GTOs are suitable mainly for low power applications
2. Induction heating and motor drives.
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Equivalent Circuit: • MCT is a thyristor consists of an ON-FET, an OFF-FET and two transistors.
• Both n-p-n and p-n-p transistors are joined together to represent the n-p-
n-p structure of MCT.
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Circuit Symbol:
• An MCT combines the feature of both
conventional four layer thyristor having
regenerative action and MOS- gate structure.
Advantages: Disadvantages:
1. MCT can be turned-on and turned-off by low gate 1. If current through MCT is greater than gate
voltages. controllable current then it cannot be turned off.
2. MCT has fast switching times (typically ton = 0.3 Then MCT has to be commutated externally like
µs and toff = 1 µs). SCR.
3. MCT has low switching losses. 2. For larger anode currents, the gate pulses of longer
4. MCT has high gate input impedance due to its duration are required.
MOS gates. 3. Gate draws peak current during turn-off.
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• With the application of this negative • The device is turned OFF by applying a positive
voltage pulse, ON-FET gets turned ON voltage pulse at the gate.
whereas OFF-FET is already OFF.
• The positive voltage pulse causes the OFF-FET
to turn ON and ON-FET to turn OFF.
• With ON-FET ON, current begins to flow
from anode A, through ON-FET and then as
the base current and emitter of n-p-n • After OFF-FET is turned ON, emitter based
transistor and then to cathode K. terminals of p-n-p transistor are short circuited
by OFF-FET.
• This turns on n-p-n transistor. This causes • So, now anode current begins to flow through
the collector current to flow in n-p-n OFF-FET and thus base current of p-n-p
transistor. transistor begins to decrease.
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Phototransistors
• It is similar to a regular BJT except that IB is
produced and controlled by light instead of a
voltage source.
• It effectively converts variations in light
energy to an electrical signal.
• IB is produced when light strikes the
photosensitive semiconductor base region.
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Phototransistors Phototransistors
• The C-B pn junction is exposed to incident • In the presence of incident light at the C-B pn
light through a lens opening in the transistor junction, a base current, Iλ , is produced that is
package. directly proportional to the light intensity.
• In the absence of incident light, only dark • Consequently, a collector current that
current exists in the device, typically in the nA increases with Iλ is produced.
range.
• Dark current is the thermally generated C-to-E • The phototransistor behaves like a
leakage current ICEO of the phototransistor in conventional BJT though in many cases, there
the absence of incident light. is no electrical connection to the base.
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Phototransistors Phototransistors
• Ic = βDC Iλ • A typical phototransistor is designed to offer
• The larger C-B region area, the more base a large area to the incident light.
current is generated.
Phototransistor are of two types. In the three-lead configuration, the base lead is
brought out so that the device can be used as a
conventional BJT with or without the additional
light-sensitivity feature.
1. Three Lead Phototransistor.
2. Two Lead Phototransistor.
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Phototransistors Phototransistors
• Bias configuration and collector characteristics: • Phototransistors are only sensitive to light
within a certain range of wavelengths.
• The figure shows the typical transistor
spectral response:
1 Angstrom = 0.1 nm or 10 -10 m
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Photodarlington
• It consists of a phototransistor
connected in darlington
arrangement with a conventional
BJT as shown.
• It has a higher current gain that
accounts for its much higher IC and
has a greater light sensitivity than
a regular phototransistor.
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