Professional Documents
Culture Documents
Abstract—This paper investigates the partial discharge Gas filled cavities in solid dielectric is the main source
characteristics of void defect in SF6 gas insulation under of void discharges. They can be produced during the
stepped alternating current voltage. Two kinds of partial manufacturing process or due to ageing of the insulation.
discharge detection techniques are used, e.g. phase-resolved Fig. 1. shows void in solid/liquid insulation-electrode
partial discharge pattern and current pulse waveform analysis.
system (a) and equivalent circuit (b).
The partial discharge patterns and current pulse waveform are
obtained by using a commercial partial discharge measurement
system and oscilloscope, respectively. With the applied voltage
raised in a regular step, the patterns of partial discharges were
recorded. From the results of phase-resolved partial discharge
(PRPD) patterns and some deduced histograms, statistical
operators like as skewness and kurtosis were calculated, and
used to investigate the partial discharge characteristics. After
that, the statistical signature (fingerprint) information
representing the insulation condition were extracted from the
experimental results. The partial discharge characteristic from
different alternating current applied voltage indicates that Fig. 1. Equivalent circuit of a void for PD [2]
phase-resolved partial discharge patterns and current pulse
waveform (CPWA) vary with applied voltage. The partial Cg is void capacitance; Cb is series capacitance of the
discharge evolution was analyzed using single current pulse material while Cm is the capacitance of the rest insulation.
waveform and sequential current pulse waveform. The voltage v(t) is applied to the series capacitances Cg and
Keywords—GIS; partial discharge; PRPD; CPWA; Cb, when no PD takes place in the preceding cycles, the
fingerprint voltage across the void is [2].
࢈
I. INTRODUCTION ࢂࢍ ሺ࢚ሻ ൌ ା ݒሺݐሻ (1)
ࢍ ࢈
Recently, gas insulated substation (GIS) is widely used in II. EXPERIMENTAL SETUP
electric power system for its high reliability, less
maintenance, compact size, and suitable for densely Partial discharge measurement under ac voltage were
populated areas. During production, installation, operation provided in the following configuration, as shown fig. 2.
and maintenance of GIS, some defects such as void, particle
etc. can be generated. Therefore, early diagnostic of GIS is Resistance
important for ensuring the reliability of power system. Partial Coupling PD Checker
Test Object
discharge measurement has been well proven to be effective Capasitor ( Ca)
( Ck)
to assess GIS insulation condition. For the purpose of A Capasitive
C
insulation condition assessment, it is necessary to have a Power
Voltage
Devider
good understanding of the partial discharge characteristics. Supply Coupling Detection
Device Impedance
According IEC standard 60270: 2000 [1] partial 50 O
181
transformer rated at 50 Hz, 10 kVA, and 0-100 kV. HV 1) Skewness
voltage was applied on GIS test chamber, raised in regular Skewness (Sk) describes the asymmetry of the
step and discharges occurred in the sample were detected distribution with respect to a normal distribution, it is
with a RC detector. The output of the detector was measured defined as :
by PDchecker and to measure the waveform of the discharge ୩ ൌ
σሺ୶ ିμሻయ ή
(2)
current pulse, partial discharge signals were detected by σయ
detection impedance 50 Ω and fed into digital oscilloscope
with maximum sampling rate 10 Gs/s and frequency Where ݔ is the measured value, ܲ ൌ ሺ݂ሺݔ ሻȀ σୀଵ ݂ሺݔ ሻሻ is
response of 2 GHz. The digitized data then transferred to the the probability of appearance for that value ݔ in the ith
personal computer for further analysis. phase window, μ ൌ ሺσ ݔ ή ܲ ሻ is the mean value, and ߪ is
To simulate the discharges, a void with diameter 1 mm the variance which ߪ ଶ ൌ ሺσሺݔ െ μሻଶ ή ܲ ሻ. For a symmetric
in epoxy resin was placed in the middle of two-plane distribution Sk = 0, if it is asymmetric to the left Sk > 0 and if
electrodes in 0.2 MPa SF6 gas as shown in fig. 3. it is asymmetric to the right Sk < 0.
HV 2) Kurtosis
Kurtosis (Ku) represents the sharpness of the distribution
with respect to the normal distribution. It is defined as :
(a) σሺ୶ ିμሻర ή
୳ ൌ െ͵ (3)
σర
SF6
182
6000
Mean Charge +
Mean Charge -
Max Charge +
5000 Max Charge -
4000
PD charge (pC)
3000
2000
1000
Fig.4. Definition of peak value I, di/dt, rise time tr, fall time tf of a single 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Phase (deg.)
(a)
Hn Distribution
Average magnitude (pC)
Phase (deg.)
(b)
Fig. 7. Hn, Hqave-n and Hqmax-n distribution of internal discharge from 1
mm void defect at (a) 4.9kV (PDIV), (b) 10kV (2.04x PDIV)
9 kV (1.84x PDIV) 11 kV (2.24x PDIV) The characteristics of Hn(φ), Hqave-n(φ), and Hqmax-n(φ)
distribution were investigated for partial discharge
Fig. 5. Typical φ-q-n patterns for internal discharge in SF6 fingerprint representations using statistical operators as
shown in fig. 8.
Maximum discharge from void defect at all applied ac
voltage is high. Positive maximum charge similar with Hn Ku. -
Hn Ku. +
discharge is under 500 pC for both half cycle as shown in Hqave-n Asym
Hqave-n cc
fig. 6.
Hqave-n Ku. -
Hqave-n Ku. +
Hqave-n Sk. -
Hqave-n Sk. +
183
C. Repetition rate
Hn Ku. -
Hn Ku. + The partial discharge repetition rate is the total number
of partial discharge pulses recorded in a selected time
Hn Sk. -
Hn Sk. +
Hqmax-n Asym
Hqmax-n cc
Hqmax-n Ku. - interval. It is another important parameter to characterize the
PD behaviours.
Hqmax-n Ku. +
Hqmax-n Sk. -
Hqmax-n Sk. +
Hqave-n Asym
Hqave-n cc
Hqave-n Ku. -
Hqave-n Ku. +
Hqave-n Sk. - 7000
Hqave-n Sk. +
Repetition rate
Repetition rate+
-1.0 -0.5 0.0 0.5 Repetition rate-
8 kV 6000
5000
Hn Ku. -
Hn Ku. + 3000
Hn Sk. -
Hn Sk. +
Hqmax-n Asym 2000
Hqmax-n cc
Hqmax-n Ku. -
Hqmax-n Ku. + 1000
Hqmax-n Sk. -
Hqmax-n Sk. +
Hqave-n Asym 0
Hqave-n cc
Hqave-n Ku. -
Hqave-n Ku. +
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Hqave-n Sk. -
Hqave-n Sk. +
Applied voltage (x PDIV)
-1.0 -0.5 0.0 0.5 1.0
10 kV
Fig. 10. Repetition rates over stepped ac applied voltage for void defect in
SF6
Fig. 8. PD Fingerprint of void defect in SF6 under ac voltage 4.9kV, 8kV,
10kV respectively The partial discharge repetition rates reported in here were
calculated after removing all the background noise using the
According fig. 9, the Hn(φ) and Hqave-n(φ) distribution both threshold levels, observations were made on 120 first cycles
in positive and negative half cycle of internal discharge of applied voltage. Fig. 10. shows repetition rate change
became asymmetric to the left Sk > 0 as the applied voltage along with rising of applied voltage, repetition rate increase
increased, meanwhile the sharpness of Hn(φ) and Hqave-n(φ) rapidly and this is indicates that the PD activities are much
distribution move to be flatter than normal distribution Ku < more intensive in higher applied voltage.
0 when the voltage was increased.
D. Partial Discharge Current Pulse Waveform
PD current pulse waveform was measured by detection
Hn Sk+
Hn Sk-
Hqave-n Sk+
impedance 50 Ω. Thousands of PD current pulses together
1 Hqave-n Sk-
with the time resolution of the order of sub-nanoseconds
were recorded in the digital oscilloscope when partial
discharge signals were detected. PD current pulse waveform
Skewness
0.5
0.0
Kurtosis
-0.5
-1.0
-1.5
-2.0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Applied voltage (x PDIV)
(a) (b)
(b)
Fig. 11. Typical PD current pulse at 0.2 MPa SF6 (a) 6 kV, (b) 11 kV
Fig. 9. Skewness and Kurtosis of Hn(φ) and Hqave-n(φ) distribution under
different AC voltage Parameters of PD current pulse were observed from the
maximum PD current pulse of different applied voltage were
calculated as shown in table1.
184
TABLE I. PARAMETERS OF SINGLE PD-CURRENT PULSE V. CONCLUSION
WAVEFORM FOR VOID DEFECT
Parameters Partial discharge characteristics of void defect in SF6 gas
Applied voltage (observed from the max. PD current pulse)
under stepped ac voltage can be mentioned as follow:
magnitude rise time fall time pulse width dI /dt
(kV) (A) (ns) (ns) (ns) (A/ns)
x PDs mostly occur in increasing part before peak of both
6 0.005540 17 25.6 29.8 0.000326 half cycle.
7
8
0.007620
0.010500
12.6
18.8
27
28.2
30
33.6
0.000605
0.000559
x From the experimental result, the average phase angle
10 0.004740 15.6 30.8 33.2 0.000304 are 66 degree and 244 degree for each half cycle.
11 0.008900 11.2 49.6 21.2 0.000795
x The patterns of internal discharges because of void
defect at positive and negative cycles of the applied
Fig. 12. shows the number of PDs signal tend to stable but
voltage are symmetric, well-known rabbit-ear.
the amplitude also grow up and pulse width became wider.
x Repetition rate is high, increase along with rising of
The amplitude of negative PD pulse became higher at the 10
applied voltage.
kV (2.04x PDIV).
Double horns pulse current formed at the higher voltage
as the physical phenomena of the PDs evolution in the
internal discharge. From the current pulse waveform
analysis, PD amplitude became higher with the increasing of
the applied voltage.
REFERENCES
185