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1. Calculate the bias current of M1 in Fig.1. Assume µnCOX =100 µA/V2, W/L=2/0.18 and VTH = 0.4 V.
2. Determine the W/L in Fig.1, that places M1 at the edge of saturation.
3. For a MOSFET operating in saturation, how do gm and IDS change if both W/L and (VGS-VTH) are
doubled?
4. A MOSFET is biased at a drain current of 0.5 mA. If µnCOX =100 µA/V2, W/L=10 and channel
length modulation parameter λ=0.1V-1, calculate the small signal parameters (transconductance
and output resistance).
5. Transistor M1 in Fig 2 never operates in linear region. Why?
6. Calculate the small signal voltage gain of the CS amplifier in Fig 3, if ID= 1mA, µnCOX =100 µA/V2 ,
W/L =10/0.18, VTH = 0.4 V and λ=0.