This document contains 24 problems related to calculating various parameters of transistor amplifiers and MOSFET devices such as current gain, collector current, drain current, output power, and transconductance given component values, operating voltages, and bias points. The problems cover topics including bipolar junction transistors, junction field-effect transistors, and metal-oxide-semiconductor field-effect transistors.
This document contains 24 problems related to calculating various parameters of transistor amplifiers and MOSFET devices such as current gain, collector current, drain current, output power, and transconductance given component values, operating voltages, and bias points. The problems cover topics including bipolar junction transistors, junction field-effect transistors, and metal-oxide-semiconductor field-effect transistors.
This document contains 24 problems related to calculating various parameters of transistor amplifiers and MOSFET devices such as current gain, collector current, drain current, output power, and transconductance given component values, operating voltages, and bias points. The problems cover topics including bipolar junction transistors, junction field-effect transistors, and metal-oxide-semiconductor field-effect transistors.
10. Find the value of V CEof the transistor and I E.
1. The collector current is 1.2 mA when the base current is 24 micro amperes. What is the current gain, β, of the transistor? 2. The β of a certain BJT is known to be approximately 180. How much base current is required in order to have 18 mA of collector current? 3. The collector current for a certain BJT is 9.8 mA when the emitter current is 10 mA. What is α ? 11. Determine the drain current of an n channel JFET having a pinch-off voltage of –4 V and drain–source saturation current of 12 mA at: 4. A certain amplifier has β of 150. If the collector current is 10 mA. What is the emitter current? i. V gs = 0 V ii. V gs= –3 V 5. Find the value of β of a transistor with α = 0.998. iii. V gs= –8 V 6. Find the value of output power of the transistor iv. V gs = 3 V and V BC. 12. Calculate the transconductance, gm, of a JFET with I DSS= 12mA & V P= –8 V at bias point V gs= –3 V.
13. What is the value of I DSSfor an n channel JFET
with g mo= 4.5 mS and V P = –3V?
14. What is the value of V P of a n-channel JFET
having 7. Find the value of output power of the transistor I DSS= 12 mA and g mo= 6500 us? and V E. 15. A p- channel JFET withI DSS= 13.5 mA, V P = 5 V is operated at I D =9.5 mA. What is the value of g mat this operating point?
16. A depletion MOSFET with I DSS=12 mA, V P = –4V
is operate at V gs= –2 V. What is the value of transconductance at this operating point? 17. An enhancement MOSFET having threshold 8. Find the value of output power of the transistor voltage of 3.5 V is operated at V gs = 5 V. What current and I E. results? Use k = 0.3 mA/ V 2
18. Determine the value of circuit transconductance for
an n-channel enhancement MOSFET having V T= 2.8 V when operated at 6 volts.
19. An enhancement MOSFET operated at V gs = 7.5V
has transconductance of 2.5 mS. What is the value of a device threshold voltage?
20. Find the value of output power of the transistor.
9.Find the value of output power of the transistor and I E. 21. Find the value of output power of the transistor. 23. Find the value of output power of the transistor.
22. Find the value of output power of the transistor.
24. Find the value of output power of the transistor. COMPUTER SYSTEM
BOOLEAN ALGEBRA Find the complement of the following functions: 1. F = (AB + A’B) C 2. F = (XY)’ + ZY’