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Abstract—This paper presents the design and experimental Section II describes the proposed ADC architecture,
test of a 40 GS/s 4 bit single-core flash ADC in a 0.13 µm SiGe Section III the circuit components and Section IV the
BiCMOS technology. The ADC exploits a traveling-wave concept measurement results. Section V concludes the presented
and integrates a new low-complexity Pseudo-XOR gray encoder results with a comparison to the state of the art.
that makes use of folded-cascode differential logic. Up to a
sampling rate of 39.04 GS/s the ADC provides a measured ENOB II. ARCHITECTURE
of more than 3 bits and a SFDR of more than 24.8 dBc within the
frequency band from DC to 20 GHz. At 40.32 GS/s the frequency The proposed ADC architecture is briefly introduced in [8]
band for a minimum effective resolution of 3 bits is 12 GHz and and is shown in Fig. 1(a). The main building blocks are a
at 42.24 GS/s it is about 5.3 GHz. unary flash ADC core and a bubble-error suppressing gray
Index Terms—Flash analog-to-digital converter (ADC), SiGe encoder. To omit the need for a front-end track-and-hold
BiCMOS, Pseudo-XOR gray encoder, data scrambling, field amplifier with fast settling time, the flash core exploits a
programmable gate array (FPGA), mm-wave data conversion. traveling-wave topology [5, 6], where analog input and clock
signal travel synchronously from comparator to comparator.
I. INTRODUCTION Fig. 1(b) exemplarily illustrates the signal distribution concept.
The strive towards Tbit/s communication will push the A linear input driver feeds the analog input signal with help of
sampling rates of analog-to-digital converters (ADCs) beyond a transmission line (TL) to a bank of parallel comparators. A
100 GS/s in the near future. Emerging 100G and 400G high-gain clock driver equivalently does this for the clock
coherent fiber-optic receivers, for instance, already necessitate signal. As the comparators are spatially apart from each other,
sampling rates greater than 50 GS/s [1-3]. In order to meet the input and clock signal do not arrive instantaneously at the
future speed requirements, a 4x time-interleaved 128 GS/s same time at all comparators, but rather successively with
4 bit ADC is being developed. This paper presents the design small time delays. The idea exploited in traveling-wave ADCs
and experimental test of one of its sub-ADCs. As a standalone is to keep the delays of the input and clock signal equal
chip, the sub-ADC can be employed in 100 Gbit/s wireless between adjacent comparators. This ensures that every
infrastructures such as proposed in [4] to enable digital signal comparator quantizes the same input signal value at each
processing (DSP) of wideband analog baseband receive sampling event, as illustrated in Fig. 1(b). Even though the
signals (>12 GHz bandwidth) with low modulation order. In comparators operate asynchronously due to the clock delays,
optical communication systems, it can be utilized to enable the same results can be obtained as with synchronous flash
DSP-based equalization of fiber-induced dispersion [5-7]. signal distribution approaches, where input and clock signal
50 Ω 50 Ω PRBS T11 1
− T10 1
+ + t T9 1
clk 1:64 FD DIV VR8 T8 1
− − Td,in T7 1
T6 1
...
T5 1
T4 1
VR3 T3 1
VR2 T2 1
VR1 Td,in = Td,clk T1 1
Td,clk
Sampling events of comparators 1 and 15
Fig. 1. ADC architecture (a) and unary flash ADC core (b).
MS-FF T1
MS-FF T2
R1 R1 R1 R1
MS-FF
MS-FF
MS-FF
MS-FF
MS-FF
MS-FF
MS-FF
MS-FF
Rf Rf Rf Rf
to Preamp 14
to Preamp 2
MS-FF T3 VR14
EF MS-FF T4 V 1n V1p V15n V15p
Clock VR2
MS-FF T5
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
R
MS-FF T6
EF MS-FF T7 VR15
EF Analog MS-FF T8 Vinn Vinp VR1 Vinn Vinp
in EF input MS-FF Td
R
MS-FF T9
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
Preamp
15 d Vinn
VR1 VR1
Emitter (3 mA)
Follower Comparator t Input driver t
(3 mA) (15 mA)
EF EF clk_B
Fig. 2. Traveling-wave ADC core (a) and comparator preamplifiers with signal feedthrough compensation (b).
139
T12 T4 Dec Quantizer Outputs G3 G2 G1 G0
0 0 00000 00000 00000 0 0 0 0 CML-XOR Systematic jitter PXOR
1 00000 00000 00001 0 0 0 1 VCC 1 1
XOR 2 00000 00000 00011 0 0 1 1 R R
1 0 0
3 00000 00000 00111 0 0 1 0 XOR
e
0 VCC
ag
St
T1
2
Cp Cn Cp Cn Cp
e
5 00000 00000 11111 0 1 1 1
4 T10
ag
PXOR
XO
St
R
G1 Bn Vcasc
XOR
7 00000 00011 11111 0 1 0 0 Bp Bp
T8
0
G3 8 00000 00111 11111 1 1 0 0
G0
R
B Ap An Bp Bn Cp Cn
0
9 00000 01111 11111 1 1 0 1
XO
Ap An
XOR 10 00000 11111 11111 1 1 1 1
T6
11 00001 11111 11111 1 1 1 0 A A B C
XO R T2 I1 I1 I1 I1
R XO 12 00011 11111 11111 1 0 1 0
XOR VEE VEE
13 00111 11111 11111 1 0 1 1
T1
+ DIV - - PRBS +
- clk +
technology from IHP which features 300 GHz fT and 500 GHz
- in +
fmax for its HBTs. The ADC including pads occupies a die area
of 1.4 x 0.9 mm2 and is wire-bonded on a RF PCB. Due to
speed limitations of available FPGA transceivers
-r
+
ef
+ D3 -
+
channel sub-sampling oscilloscope with 70 GHz analog Fig. 5. Wire-bonded ADC on RF PCB and die photograph.
bandwidth. To ensure a common time base for the four
140
TABLE 1. Comparison of mm-wave SiGe ADCs.
This
[9] [13] [14] [3]
work
Architecture Flash Flash1 Flash1 Folding Flash
Digital encoder Yes No No Yes Yes
Time-interleaved No No No Yes, 4x Yes, 2x
Sampling
40.32 35 40 30 50
rate (GS/s)
Resolution (bits) 4 4 3 6 5
33/1 29/1 28/1 38/1 35/2
SFDR (dBc)
30/12 27/11 18/14 37/10 34/10
/fin (GHz)
24/20 16/15 11/19 35/16 27/22
3.7/1 3.7/1 2.8/0.05 5.1/1 4.1/2
ENOB (bits)
3.0/12 3.0/11 2.02/14 3.9/10 3.7/10
/fin (GHz)
2.8/20 1.6/15 1.22/19 3.5/16 3.4/22
Power (W) 2.33/3.5 4.53/5 3.83/4.5 8.5 5.4
FOM (pJ/cs) 8.33/20
25.63/11 33.92,3/14 25.0/16 11.6/22
/fin (GHz) 12.6/20
Die area (mm2) 1.3 8.0 4.0 13.6 10.2
SiGe SiGe SiGe SiGe
SiGe
Technology BiCMOS BiCMOS BiCMOS BiCMOS
120 nm
Fig. 6. Measured dynamic ADC performance at different sampling rates. 130 nm 180 nm 180 nm 180 nm
1 2 3
unary ADC-DAC ENOBestimated ≈ SFDR/9 w/o output drivers or DAC
141