HFS2N60

July 2005

BVDSS = 600 V
RDS(on) typ = 4.0 Ω
HFS2N60
ID = 2.0 A
600V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design 1
2
3
‰ Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 8 8.5
5 nC (Typ
(Typ.))
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
‰ 100% Avalanche Tested

Absolute Maximum Ratings TC=25℃ unless otherwise specified

Symbol Parameter Value Units

VDSS Drain Source Voltage
Drain-Source 600 V
ID Drain Current – Continuous (TC = 25℃) 2.0* A
Drain Current – Continuous (TC = 100℃) 1.3* A
IDM Drain Current – Pulsed (Note 1) 6.0* A
VGS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
IAR Avalanche Current (Note 1) 20
2.0 A
EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25℃) 23 W
- Derate above 25℃ 0.18 W/℃
TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃
TL Maximum lead temperature for soldering purposes,
300 ℃
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case -- 5.5
℃/W
RθJA Junction-to-Ambient -- 62.5

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 HFS2N60
Electrical Characteristics TC=25 °C unless otherwise specified

Symbol
y Parameter Test Conditions Min Typ
y Max Units

On Characteristics
VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V
RDS(ON) Static Drain-Source
VGS = 10 V, ID = 1.0 A -- 4.0 5.0 Ω
On-Resistance

Off Characteristics
BVDSS D i S
Drain-Source Breakdown
B kd V
Voltage
lt VGS = 0 V
V, ID = 250 ㎂ 600 -- -- V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to25℃ -- 0.65 -- V/℃
/ΔTJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 1 ㎂
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃ -- -- 10 ㎂
IGSSF Gate-Body Leakage Current,
VGS = 30 V, VDS = 0 V -- -- 100 ㎁
Forward
IGSSR G t B d L
Gate-Body Leakage
k C
Current,
t
VGS = -30 V, VDS = 0 V -- -- -100 ㎁
Reverse

Dynamic Characteristics
Ciss Input Capacitance -- 260 340 ㎊
VDS = 25 V, VGS = 0 V,
Coss Output Capacitance -- 25 33 ㎊
f = 1.0 MHz
Crss Reverse Transfer Capacitance -- 5.5 7 ㎊

Switching Characteristics
td(on) Turn-On Time -- 15 30 ㎱
VDS = 300 V, ID = 2.0 A,
tr Turn-On Rise Time RG = 25 Ω -- 40 80 ㎱
td(off) Turn-Off Delay Time -- 40 80 ㎱
tf Turn-Off Fall Time (Note 4,5)
-- 30 60 ㎱
Qg Total Gate Charge VDS = 480V, ID = 2.0 A, -- 8.5 11 nC
Qgs Gate-Source Charge VGS = 10 V -- 2.0 -- nC
Qgd Gate-Drain Charge (Note 4,5) -- 4.0 -- nC

Source-Drain Diode Maximum Ratings and Characteristics

IS Continuous Source-Drain Diode Forward Current -- -- 4.5
A
ISM Pulsed Source-Drain Diode Forward Current -- -- 18
VSD Source-Drain
Source Drain Diode Forward Voltage IS = 2.0
20A A, VGS = 0 V -- -- 14
1.4 V
trr Reverse Recovery Time IS = 2.0 A, VGS = 0 V -- 220 -- ㎱
Qrr Reverse Recovery Charge diF/dt = 100 A/μs (Note 4) -- 1.1 -- μC

Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=55mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4 P
4. Pulse
l TTestt : Pulse
P l Width ≤ 300μs,
300 Duty
D t CCycle
l ≤ 2%
5. Essentially Independent of Operating Temperature

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 HFS2N60
Typical Characteristics

Figure 1. On Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

450 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
400
Crss = Cgd
10 VDS = 120V
e Voltage [V]

350 VDS = 300V

Ciss VDS = 480V
300 8
ces [pF]

250 Coss
VGS, Gate-Source

6
Capacitanc

200

150 ※ Note ; 4
1. VGS = 0 V
100 Crss 2. f = 1 MHz
2
50 ※ Note : ID = 2.0 A

0 0
10
-1
10
0
10
1 0 1 2 3 4 5 6 7 8 9 10

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 HFS2N60
Typical Characteristics (continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2.0

1.5
ain Current [A]

1.0
ID, Dra

0.5

0.0
25 50 75 100 125 150

TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case
C T
Temperature
t

D = 0 .5
al Response

0
10 0 .2
※ N o te s :
1 . Z θ J C( t) = 5 .5 ℃ /W M a x .
0 .1 2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t))
0 .0
05
Zθ JC(t), Therma

-1 0 .0 2
10
0 .0 1 PDM
s in g le p u ls e t1
-2
t2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Fi
Figure 11.
11 Transient
T i t Thermal
Th l Response
R Curve
C

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 HFS2N60
Fig 12. Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VDD
RG ( 0.5 rated VDS )

10%
Vin
10V DUT
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- LL IAS2 --------------------
2 BVDSS -- VDD
VDD
BVDSS
ID
IAS
RG
ID (t)

DUT VDD VDS (t)

10V

tp Time

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 HFS2N60
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT
+

VDS

IS
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• IS controlled by pulse period

G
Gate Pulse Width
VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop

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 HFS2N60
Package Dimension

TO-
TO-220F

±0.20 ±0.20

.20 2 54±0.20
2.54 ±0 20
±0
.1 8
φ3 0.70±0.20

6.68±0.20
3.30±±0.20
15.87±00.20

12.42±0.20

2.76
2 76±0.20
±0 20

1.47max
9.75±0.20

0.80
0 80±0.20
0 20 0.50
0 50±0.20
0 20

2.54typ
2.54typ

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