2SA1725

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit
10.1±0.2 4.2±0.2

4.0±0.2
VCBO –80 V ICBO VCB=–80V –10max µA 2.8 c0.5

VCEO –80 V IEBO VEB=–6V –10max µA

8.4±0.2
VEBO V(BR)CEO IC=–25mA –80min V

16.9±0.3
–6 V
ø3.3±0.2
IC –6 A hFE VCE=–4V, IC=–2A 50min∗ a

0.8±0.2
b
IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V
PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz

±0.2
3.9
13.0min
Tj 150 °C COB VCB=–10V, f=1MHz 150typ pF 1.35±0.15

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.35±0.15

0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( s a t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V CE =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –3 –6
m
A
0 mA
00 – 15 –1 00 m
A
–2
–5 –8 0m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–50mA

–3 –30mA

p)

mp)
Tem

)
emp
–20mA

e Te
–2 –1 –2

se

se T
(Ca

(Cas
(Ca
I B =–10mA I C =–6A

˚C
125

–30˚C
25˚C
–1 –4A
–2A

0 0 0
0 –1 –2 –3 –4 0 –0.5 –1.0 –1.5 0 –0.5 –1 –1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
300 300 5

125˚C
D C Cur r ent Gai n h F E

DC C urrent G ain h FE

Transient Thermal Resistance

Typ
25˚C

100 100 –30˚C

50 50

0.5
30 30 0.4
–0.02 –0.1 –0.5 –1 –5 –6 –0.02 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
30 –20 30

–10
10
M aximum Po wer Dissipat io n P C (W)

Typ m
100ms s
–5
Cut -off Fre quen cy f T ( MH Z )

DC
ith
Collecto r Cur ren t I C (A)

20 20
In
fin
ite
he

–1
at
si
nk

–0.5
10 10

Without Heatsink
Natural Cooling
–0.1 Without Heatsink
2
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

30