Basic Semiconductor Physics p-n junctions Solar Cell Behaviour

Lecture 5 - Behaviour of Solar Cells

Alan P. Morrison

September 25, 2019

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Table of contents

1 Basic Semiconductor Physics

2 p-n junctions

3 Solar Cell Behaviour

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Energy band model

Semiconductor behaviour described using energy levels
The primary energy levels of interest are the Valence Band
(VB) and Conduction Band (CB)
These bands are separated by forbidden energy - Bandgap
The Bandgap energy, Eg , determines many of the optical and
electrical properties of the semiconductor

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Real Energy Bands

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Bandgap vs. Lattice Parameter

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Crystalline/Polycrystalline/Amorphous

Crystalline - long-range ordered structure; expensive

Polycrystalline - Mid-range order, grain boundaries cause
difficulties; cheaper
Amorphous - No order, dangling bonds; cheapest material
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Doping

Adding dopants can change material conductivity

n-type dopants - donors - add excess electrons
p-type dopants - acceptors - add excess holes

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Absorption of Light

Energy of a photon (in eV) related to its wavelength (in µm)

1.24
E= (1)
λ

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Absorption properties of semiconductors

Band edge of common semiconductors shown

Penetration depth increases with wavelength
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p-n junction diode

Most solar cell structures are based on the basic p-n junction
diode
Diode formed when p-type and n-type material are brought
into contact
Diodes can be homojunction (same material for p and n) or
heterojunction

The diode equation:

[ ( ) ]
qV
I = I0 exp −1 (2)
ηkT

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p-n junction diode

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p-n junction diode

I0 increases with T
I0 decreases with increased material quality
kT
At 300 K, q = 25.85 mV, the thermal voltage
η in Eqn. 2 is the ideality factor, between 1 and 2 that
typically increases when current decreases
As T increases diode I − V curve shifts by -2 mV/o C for a
given current

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Diode I − V curve

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Effect of light

Light shining on solar cell can behave in different ways

To maximise solar cell power → maximise desired absorption
and absorption after reflection

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Ideal short circuit current flow

Carriers created by absorption must be collected at the

contacts
Electric field at p-n junction sweeps electrons to n-side and
holes to p-side

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Carrier loss mechanisms

Some electron-hole pairs are lost before they can be collected

Collected carriers generate a current, even when V = 0
Chances of collection are improved if e-h pairs are created
within a diffusion length of the depletion region

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Effect of light on I − V behaviour

Light shifts the I − V curve into fourth quadrant where power
is extracted
In the presence of light the diode equation becomes:
[ ( ) ]
qV
I = I0 exp − 1 − IL (3)
ηkT
where IL is the light generated current.

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I − V and Power Curves

The I − V curve is normally shown mirrored through the

voltage axis
The power is the product I.V
Maximum power point is when I.V is a maximum

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Solar Cell Parameters

For a given irradiance, operating temperature and area the

limiting parameters for cell output are
1 Short circuit current (Isc ) - maximum current at zero voltage.
Ideally at V = 0, Isc = IL . Isc directly proportional to available
sunlight
2 Open circuit voltage (Voc ) - maximum voltage at zero current.
Voc increases logarithmically with increased sunlight. This
characteristics make solar cells ideally suited to battery
charging.

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Solar Cell Parameters

Maximum Power Point (Pmp = Vmp .Imp ) - largest rectangle

that can be fitted under I-V curve

( )
ηkT IL
Voc= ln +1 (4)
q I0
 
ηkT  Vmp
Vmp = Voc − ln ( ) + 1 (5)
q ηkT
q

Peak power is maximum power point under 1 kW/m2 sunlight -

PV panels rated in watts peak (Wp )

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Solar Cell Parameters

Fill Factor (FF) - measure of junction quality and series

resistance of cell
Vmp Imp
FF = (6)
Voc Isc
Hence:
Pmp = Voc Isc FF (7)
The nearer the FF is to one the higher the quality of the cell.

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