Observations

Table for Drain Characteristics of JFET

DRAIN CURRENT ID ma ↓
VGS(V) → 0 0.25 0.5 1 1.25
VDS(V) ↓
0.1 0.2 0.4 0.3 0.3 0.4
0.3 0.9 0.9 0.9 0.9 0.5
0.7 2.4 2.2 2.0 1.5 1
1 3.4 3.1 2.7 1.8 1.1
2 5.8 5.2 4.0 2.2 1.4
3 7 5.9 4.4 2.5 1.6
5 7.7 6.4 4.9 2.9 2
6 7.7 6.5 5.1 3.1 2.1

Table for Transfer Characteristics

For Transfer Characteristics: VDS= 6v

ID(ma)→ 7.7 6.1 5.1 3.9 2.9 2.15 1.6

VGS → 0 0.25 0.5 0.75 1 1.25 1.5

Observation for IC audio amplifier

Table to Observe IC audio amplifier

Vo(p-p) Vin(p-p) Av Pout

4V 128 mV 31.25

Calculations

Gain (Av) =Vout/Vin =,4/(128 x 10-3 ) = 31.25

Output power

Poutput = (Vorms )2 / R =

Where R= (speaker)

Iin =

Pinput = Vin*Iin =

η=(Pout/Pin)*100 =
Discussion and Conclusion

In this experiment, we examined the operation of a Junction Field Effect Transistor, its drain and
transfer characteristics. Graphs were plotted between Id and Vds (drain characteristics) under
various Vgs and between Id and -Vgs (transfer characteristics) at Vds=6V. the graphs drawn
matched theoretical curves. It was observed that transfer characteristics of JFET was found
similar to the trans-conductance characteristic of a vacuum tube or a transistor.

Initially when drain-source voltage Vns is zero, there is no attracting potential at the drain, so no
current flows inspite of the fact that the channel is fully open. This gives drain current Ip = 0. For
small applied voltage Vna, the N-type bar acts as a simple semiconductor resistor, and the drain
current increases linearly with_the increase in Vds, upto the knee point. This region, (to the left
of the knee point) of the curve is called the channel ohmic region, because in this region the FET
behaves like an ordinary resistor.

With the increase in drain current ID, the ohmic voltage drop between the source and channel
region reverse-biases the gate junction. The reverse-biasing of the gate junction is not uniform
throughout., The reverse bias is more at the drain end than that at the source end of the channel,
so with the increase in Vds, the conducting portion of the channel begins to constrict more at the
drain end. Eventually a voltage Vds is reached at which the channel is pinched off. The drain
current ID no longer increases with the increase in Vds. It approaches a constant saturation value.
The value of voltage VDS at which the channel is pinched off (i.e. all the free charges from the
channel get removed), is called the pinch-off voltage Vp. The pinch-off voltage Vp, not too
sharply defined on the curve, where the drain current I D begins to level off and attains a constant
value.

It is to be noted that in the pinch-off (or saturation) region the channel resistance increases in
proportion to increase in VDS and so keeps the drain current almost constant and the reverse bias
required by the gate-channel junction is supplied entirely by the voltage drop across the channel
resistance due to flow of IDsg and not by the external bias because VGS = 0

It is observed that
(i) Drain current decreases with the increase in negative gate-source bias
(ii) Drain current, ID = IDSS = 4.4 mA when VGS = 0
(iii) Drain current, ID = 0 when VGS = VD 1.5V

In audio amplifier, it was observed that audio amplifier amplified low-power audio signals to a
level which is suitable for driving loudspeakers. The input signal of an audio amplifier may only
measure a few hundred microwatts, but its output measured ……..watt.
Thus, gain and efficiency of an IC audio Amplifier were determined to be……. and ……
respectively.