AOD609

Complementary Enhancement Mode Field Effect Transistor

General Description Features
The AOD609 uses advanced trench technology n-channel
MOSFETs to provide excellent RDS(ON) and low VDS (V) = 40V, ID = 12A (VGS=10V)
gate charge. The complementary MOSFETs may RDS(ON)< 30mW (VGS=10V)
be used in H-bridge, Inverters and other RDS(ON)< 40mW (VGS=4.5V)
applications. p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
-RoHS Compliant RDS(ON)< 45mW (VGS= -10V)
-Halogen Free* RDS(ON)< 66mW (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested!

TO-252-4L
D-PAK Top View D1/D2
Top View Bottom View
D1/D2 Drain Connected
to Tab

G1 G2
G2 S1 S2
S2
G1 n-channel p-channel
S1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TC=25°C 12 -12
B,H
Current TC=100°C ID 12 -12
A
Pulsed Drain Current B IDM 30 -30
C
Avalanche Current IAR 14 -20
Repetitive avalanche energy L=0.1mH C EAR 9.8 20 mJ
TC=25°C 27 30
Power Dissipation PD W
TC=100°C 14 15
TA=25°C 2 2
Power Dissipation PDSM W
TA=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 -55 to 175 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A,D t ≤ 10s n-ch 17.4 25 °C/W
RqJA
Maximum Junction-to-Ambient A,D Steady-State n-ch 50 60 °C/W
Maximum Junction-to-Lead C Steady-State RqJC n-ch 4 5.5 °C/W
Maximum Junction-to-Ambient A,D t ≤ 10s p-ch 16.7 25 °C/W
A,D RqJA
Maximum Junction-to-Ambient Steady-State p-ch 50 60 °C/W
Maximum Junction-to-Lead C Steady-State RqJC p-ch 3.5 5 °C/W

Rev5.0: November 2018 www.aosmd.com Page 1 of 9

 AOD609

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 2.5 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=12A 24 30
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 37 46 mW
VGS=4.5V, ID=8A 31 40
gFS Forward Transconductance VDS=5V, ID=12A 25 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
H
IS Maximum Body-Diode Continuous Current 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 516 650 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 82 pF
Crss Reverse Transfer Capacitance 43 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4.6 6.9 W
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 8.3 10.8 nC
VGS=10V, VDS=20V,
Qgs Gate Source Charge 2.3 nC
ID=12A
Qgd Gate Drain Charge 1.6 nC
tD(on) Turn-On DelayTime 6.4 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1.4W, 3.6 ns
tD(off) Turn-Off DelayTime RGEN=3W 16.2 ns
tf Turn-Off Fall Time 6.6 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/ms 18 24 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms 10 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev5.0: November 2018 www.aosmd.com Page 2 of 9

 AOD609

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID= -250mA, VGS=0V -40 V
VDS= -40V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID= -250mA -1.7 -2 -3 V
ID(ON) On state drain current VGS= -10V, VDS= -5V -30 A
VGS= -10V, ID= -12A 36 45
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 52 65 mW
VGS= -4.5V, ID= -8A 51 66
gFS Forward Transconductance VDS= -5V, ID= -12A 22 S
VSD Diode Forward Voltage IS= -1A,VGS=0V -0.76 -1 V
H
IS Maximum Body-Diode Continuous Current -12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 900 1125 pF
Coss Output Capacitance VGS=0V, VDS= -20V, f=1MHz 97 pF
Crss Reverse Transfer Capacitance 68 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 14 W
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge 16.2 21 nC
Qg (-4.5V) Total Gate Charge VGS= -10V, VDS= -20V, 7.2 9.4 nC
Qgs Gate Source Charge ID= -12A 3.8 nC
Qgd Gate Drain Charge 3.5 nC
tD(on) Turn-On DelayTime 6.2 ns
tr Turn-On Rise Time VGS= -10V, VDS= -20V, 8.4 ns
tD(off) Turn-Off DelayTime RL=1.4W, RGEN=3W 44.8 ns
tf Turn-Off Fall Time 41.2 ns
trr Body Diode Reverse Recovery Time IF= -12A, dI/dt=100A/ms 21 27 ns
Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/ms 14 nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. The maximum current rating is limited by bond-wires.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev5.0: November 2018 www.aosmd.com Page 3 of 9

 AOD609

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 30
10V 4.5V VDS=5V
25 25
5V
20 20
4V
ID (A)

ID(A)
15 15

10 10 125°C

5 5 25°C
VGS=3.5V
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

40 1.8

VGS=4.5V
Normalized On-Resistance

35 1.6
VGS=10V
ID=12A
30 1.4
RDS(ON) (mW)

25 1.2

20 1 VGS=4.5V
VGS=10V ID=8A

15 0.8

10 0.6
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

70 100
ID=12A

60 10

50 1
RDS(ON) (mW)

IS (A)

125°C
0.1
40

0.01 125°C 25°C

30

0.001
20 25°C
0.0001
10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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 AOD609

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=20V
ID= 12A
8
600
Ciss

Capacitance (pF)
VGS (Volts)

6
400
4

200 Crss
2 Coss

0 0
0 2 4 6 8 10 0 10 20 30 40

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000
TJ(Max)=150°C
10ms TA=25°C
10
100ms 100
ID (Amps)

Power (W)

1
RDS(ON) 1ms
limited 10ms
0.1s
0.1 10
1s
TJ(Max)=150° 10s
C DC
0.01
0.1 1 10 100
1
VDS (Volts)
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient

RqJA=60°C/W
Thermal Resistance

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Rev5.0: November 2018 www.aosmd.com Page 5 of 9

 AOD609

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev5.0: November 2018 www.aosmd.com Page 6 of 9

 AOD609

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 30
-10V VDS=-5V
25 -5V 25
-4V
20 -4.5V 20
-ID (A)

-ID(A)
15 15

10 10 125°C

5 VGS=-3.5V 5 25°C

0 0
0 1 2 3 4 5 1 2 3 4 5
-VDS (Volts) -VGS(Volts)
Fig 12: On-Region Characteristics Figure 13: Transfer Characteristics

65 1.7

60
Normalized On-Resistance

VGS=-4.5V 1.5 VGS=-10V

55 ID=-12A
RDS(ON) (mW)

1.3
50

45 1.1
VGS=-4.5V
40 VGS=-10V
ID=-8A
0.9
35

30 0.7
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
-ID (A) Temperature (°C)
Figure 14: On-Resistance vs. Drain Current and Figure 15: On-Resistance vs. Junction
Gate Voltage Temperature

100 100
ID=-12A
10
80
1
RDS(ON) (mW)

125°C
-IS (A)

125°C
60 0.1

0.01 25°C
40
0.001
25°C

20 0.0001
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage Figure 17: Body-Diode Characteristics

Rev5.0: November 2018 www.aosmd.com Page 7 of 9

 AOD609

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1400
VDS=-20V
ID= -12A 1200
8
Ciss
1000

Capacitance (pF)
-VGS (Volts)

6
800

4 600

400
Crss
2
200 Coss

0 0
0 3 6 9 12 15 18 0 10 20 30 40
Qg (nC) -VDS (Volts)
Figure 18: Gate-Charge Characteristics Figure 19: Capacitance Characteristics

100 1000
TJ(Max)=150°C
TA=25°C
10ms
10
100ms 100
-ID (Amps)

Power (W)

1
RDS(ON) 1ms
limited 10ms
0.1s 10
0.1
1s
TJ(Max)=150° 10s
C DC
0.01
0.1 1 10 100 1
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 20: Maximum Forward Biased Safe Figure 21: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJA=60°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 22: Normalized Maximum Transient Thermal Impedance

Rev5.0: November 2018 www.aosmd.com Page 8 of 9

 AOD609

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L EAR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev5.0: November 2018 www.aosmd.com Page 9 of 9