THYRISTOR (Silicon Controlled Rectifier)

 Principally, a p-n-p-n junction device

 Has three nos. of terminals, namely (i) Anode (A), (ii) Cathode (K) and
(iii) Gate (G)
 If kept turned-off, then prevents current-flow and blocks voltages
both in the forward and reverse directions
 Allows current to flow in only one direction, i.e. from anode to cathode
(this is called forward current) when “triggered” (i.e. turned on)
 Blocks current-flow in the reverse direction (i.e. from cathode to anode)

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SCR: Basics
Gate
Anode

Semiconductor-structure of an SCR
Cathode (connected to body)
A typical thyristor

Schematic Symbol

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SCR: Semiconductor Structure

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 SCR: Blocking state
• J2 reverse biased, thermally generated electron-holes within depletion
layer will give rise to a leakage current, Ico
• Internal multiplication of current similar in effect to that occuring
during “avalanche breakdown”.

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SCR: Turn-On Mechanism

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When a positive gate current of sufficient magnitude is
applied

Regenerative process
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I-V Characteristic of a Thyristor

1) Forward blocking OFF-State (0-1 region)

2) Negative resistance region (1-2 region)
3) Forward conduction ON-state (2-3 region)
4) Reverse blocking OFF-state (0-4 region)
5) Reverse breakdown region (4-5 region)

Latching Current: Minimum value of anode

current which is required to sustain conduction
immediately after the SCR is turned on and the
gate current is removed.
Holding Current: Minimum value of forward anode current
below which the thyristor reverts to forward off-state from on-
state inspite of positive anode to cathode voltage (VAK)
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 Two-Transistor Model of Thyristor
(developed by J. J. Ebers)
 SCR can be viewed as two BJTs,
connected back-to-back, one a
PNP while the other an NPN type
BJT.
 A small gate current to the base
of Q2, sets up a gate current of
Q1, which supports the gate
current of Q2 and so on.
 Thus, soon the two BJTs
conduct and then even if the
external pulse is removed, the
device continues to conduct.
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Ebars Moll Equation
I C   I E  I CB 0 for a transistor
I C  Collector current
I E  Emitter current
I CB 0  Leakage current of C - B junction
IC
  Commom base current gain 
IE
I C1  1 I A  I CB 01
I C2   2 I K  I CB 02
I A  I C1  I C2
I A  1 I A   2 I K  I CB 01  I CB 02
But for a gating signal I G ,
I K  IG  IA
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Thus, I A  1 I A   2 ( I G  I A )  I CB 01  I CB 02
or, I A [1  (1   2 )]   2 I G  I CB 01  I CB 02
 2 I G  I CB 01  I CB 02
IA 
1  (1   2 )
(1   2 ) is called loop gain.
1 varies with I A ,
 2 varies with I k
If I G increases  I A will increase  (1   2 ) will increase  I A will increase
Thus positive feedback is created.
When (1   2 ) tends to unity, thyristor turns on with a small I G and breakover occurs.
Total voltage across thyristor  Forward drop of one emitter - junction
 VCE ( sat ) of other transistor
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Voltage Ratings

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