PD - 94099A

IRFP32N50K
SMPS MOSFET
Applications HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
VDSS RDS(on)typ. ID
l High Speed Power Switching 500V 0.135Ω 32A
l Hard Switched and High Frequency
Circuits
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current TO-247AC
l Low RDS(on)

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current  130
PD @TC = 25°C Power Dissipation 460 W
Linear Derating Factor 3.7 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 13 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °C
(1.6mm from case )
Mounting torque, 6-32 or M3 screw 10lb*in (1.1N*m)

Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 450 mJ
IAR Avalanche Current ––– 32 A
EAR Repetitive Avalanche Energy ––– 46 mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

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IRFP32N50K
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA†
RDS(on) Static Drain-to-Source On-Resistance ––– 0.135 0.16 Ω VGS = 10V, ID = 32A „
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = V GS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
IDSS Drain-to-Source Leakage Current
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 14 ––– ––– S VDS = 50V, ID = 32A
Qg Total Gate Charge ––– ––– 190 ID = 32A
Qgs Gate-to-Source Charge ––– ––– 59 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 84 VGS = 10V „
td(on) Turn-On Delay Time ––– 28 ––– VDD = 250V
tr Rise Time ––– 120 ––– ns ID = 32A
td(off) Turn-Off Delay Time ––– 48 ––– RG = 4.3Ω
tf Fall Time ––– 54 ––– VGS = 10V „
Ciss Input Capacitance ––– 5280 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 45 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 5630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 155 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 265 ––– VGS = 0V, VDS = 0V to 400V …

Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 32
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 130

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 32A, V GS = 0V „

trr Reverse Recovery Time ––– 530 800 ns TJ = 25°C, IF = 32A
Qrr Reverse RecoveryCharge ––– 9.0 13.5 µC di/dt = 100A/µs „
IRRM Reverse RecoveryCurrent ––– 30 ––– A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A, as Coss while VDS is rising from 0 to 80% VDSS .

ƒ ISD ≤ 32A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C
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 IRFP32N50K

1000 100
VGS VGS
TOP 15V TOP 15V
12V 12V
I D, Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

10V 10V
100 8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 10 5.5V
10 BOTTOM 5.0V BOTTOM 5.0V

5.0V

1
1

0.1 5.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0

ID = 32A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

100 
TJ = 150° C
2.0
(Normalized)

10 1.5


TJ = 25 ° C
1.0
1

0.5

0.1
V DS = 50V
20µs PULSE WIDTH
0.0

VGS = 10V
4 5 7 8 9 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFP32N50K

100000 20
V GS = 0V, f = 1 MHZ 
ID = 32A


Ciss = Cgs + Cgd, Cds SHORTED V DS = 400V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS = 250V
Coss = Cds + Cgd
16 V DS = 100V
10000
C, Capacitance(pF)

Ciss
12

1000

Coss 8

100
4

Crss
10 0
1 10 100 1000 0 40 80 120 160 200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000


OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)

100
ID , Drain Current (A)


TJ = 150 ° C
100

10us

10


100us

TJ = 25 ° C 10

1

1ms

0.1

V GS = 0 V
1

TC = 25 °C
TJ = 150 °C
Single Pulse 
10ms

0.2 0.6 0.9 1.3 1.6 10 100 1000 10000

VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFP32N50K

35 RD
VDS

30 VGS
D.U.T.
RG
ID , Drain Current (A)

+
25 -VDD

20 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15

Fig 10a. Switching Time Test Circuit

10

VDS
5
90%

0
25 50 75 100 125 150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50
0.1
0.20

0.10


0.05
PDM
0.01
0.02
0.01  SINGLE PULSE
(THERMAL RESPONSE) t1
t2

0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP32N50K


800
ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP 14A
20A
640 BOTTOM 32A 1 5V

480 D R IV E R
VDS L

320 RG D .U .T +
V
- DD
IA S A
20V
160 tp 0 .0 1 Ω

Fig 12c. Unclamped Inductive Test Circuit

0
25 50 75 100 125 150
Starting T J , Junction Temperature ( ° C)

Fig 12a. Maximum Avalanche Energy

Vs. Drain Current V (B R )D SS
tp

IAS

Fig 12d. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ

12V .2µF
.3µF
VGS
+ QGS QGD
V
D.U.T. - DS

VGS VG
3mA

IG ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform

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 IRFP32N50K
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFP32N50K
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)

3.65 (.1 43) -D -

1 5.90 (.62 6) 3.55 (.1 40) 5 .30 (.209 )
1 5.30 (.60 2) 4 .70 (.185 )
0.25 (.0 10) M D B M
-B- -A - 2.5 0 (.08 9)
1.5 0 (.05 9)
5 .50 (.217) 4

20 .30 (.800)
19 .70 (.775) 5.50 (.21 7) N O TES :
2X
4.50 (.17 7) 1 DIM EN S IO N IN G & TO LE R AN C IN G
P ER AN S I Y1 4.5M , 1 98 2.
1 2 3 2 CO N TR O LL IN G DIM EN S IO N : IN CH .
3 CO N F O RM S TO JED E C O U TLINE
-C - TO -2 47 -A C .
14.8 0 (.5 83)
4.3 0 (.1 70)
14.2 0 (.5 59)
3.7 0 (.1 45)

2.40 (.09 4) L EA D A S SIG N M E N TS

1.4 0 (.0 56) 0.80 (.03 1)
2.00 (.07 9) 3 X 1.0 0 (.0 39) 3X 0.40 (.01 6) 1 - G A TE
2X 2 - D R AIN
0.2 5 (.0 10) M C A S 2.60 (.1 02) 3 - S O UR C E
5.45 (.2 15) 2.20 (.0 87) 4 - D R AIN
3 .40 (.133 )
2X 3 .00 (.118 )

Part Marking Information

TO-247AC E X A M P L E : TH IS IS A N IR F P E 3 0 A
W ITH A S S E M B L Y PART N UMB ER
L O T C O DE 3A1 Q IN TE R N A TIO N A L
R E C TIF IE R IR F P E 3 0
LO G O
3A1 Q 93 02
ASSEM BLY D A TE C O D E
L OT CO DE (Y YW W )
YY = YEA R
W W W EE K

This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
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