AOL1413

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AOL1413 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30V
with a 25V gate rating. This device is suitable for use ID = -38A (VGS = -10V)
as a load switch or in PWM applications. The device is RDS(ON) < 17mΩ (VGS = -10V)
ESD protected. RDS(ON) < 36mΩ (VGS = -5V)

-RoHS Compliant
ESD Protected!
-Halogen and Antimony Free Green Device*

D
Ultra SO-8TM Top View

D
Bottom tab G
connected to
S drain S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -38
Current B TC=100°C ID -27
Pulsed Drain Current C IDM -70 A
Continuous Drain TA=25°C -9
Current A TA=70°C IDSM -7
TC=25°C 38
PD W
Power Dissipation B TC=100°C 19
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 18 25 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 49 60 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.9 4 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1413

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250uA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V ±10 uA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -2.5 -3.5 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -70 A
VGS=-10V, ID=-20A 13.5 17
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 18.5 24
VGS=-5V, ID=-20A 28 36
gFS Forward Transconductance VDS=-5V, ID=20A 27 S
VSD Diode Forward Voltage IS=1A,VGS=0V -0.72 -1 V
IS Maximum Body-Diode Continuous Current -38 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1760 2200 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 360 pF
Crss Reverse Transfer Capacitance 255 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6.4 8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 30 38 nC
Qg(4.5V) Total Gate Charge 11 nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs Gate Source Charge 7 nC
Qgd Gate Drain Charge 8 nC
tD(on) Turn-On DelayTime 11.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.75Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 35 ns
tf Turn-Off Fall Time 18.5 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 24 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 16 nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.

* This device is guaranteed green after date code 8P11 (June 1ST 2008)
Rev3:April, 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70 25

60 VDS=-5V
-10V 125°C
20
50

40 15
ID(A)

ID(A)
30 -5V
10

20 -4.5V
5 25°C
10
VGS=-4V

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

40.0 1.8
ID=-20A

30.0 Normalized On-Resistance 1.6

VGS=-10V
VGS=-5V
RDS(ON) (mΩ)

1.4
20.0

1.2 VGS=-5V
10.0
VGS=-10V
1

0.0
0 5 10 15 20 25 0.8
0 50 100 150 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

50 1.0E+02
ID=20A
1.0E+01
40 125°C

125°C 1.0E+00

30
RDS(ON) (mΩ)

1.0E-01 25°C
IS (A)

TC=100°C
TA=25°C 1.0E-02
20
1.0E-03
-55 to 175
10
25°C 1.0E-04

0 1.0E-05
0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500

VDS=-15V Ciss
8 ID=-20A 2000

Capacitance (pF)
VGS (Volts)

6 1500

4 1000
Coss

2 500

Crss
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 100
TJ(Max)=175°C
100 TC=25°C
10µs 80
RDS(ON)
limited 100µs
Power (W)

10
ID (Amps)

1ms 60
DC
1 10ms

TJ(Max)=175°C 40
0.1
TC=25°C

0.01 20
0.01 0.1 1 10 100 0.0001 0.0010.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=4°C/W
Thermal Resistance

TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50

40 40
Power Dissipation (W)

Current rating ID(A)

30 30

20 20

10 10

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 13: Power De-rating (Note B) Figure 14: Current De-rating (Note B)

100000

10000
Power (W)

1000

100

10

1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1
Thermal Resistance

RθJA=60°C/W

0.1

0.01
PD
0.001
Ton
Single Pulse T
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AOL1413

G ate C harge Test C ircuit & W aveform

V gs
Qg
- -10V
VDC
-
+ V ds Q gs Q gd
VDC
+
DUT
V gs

Ig

C harge

Resistive Switching Test Circuit & W aveforms

RL
Vds t on t off

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

D iode R ecovery T est C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
Vgs

t rr
V ds - L -Isd -I F
Isd dI/dt
+ Vdd -I R M
V gs VDC
Vdd
Ig
- -V ds

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