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1/22/2020 Semiconductor Devices and Circuits - - Unit 2 - Week 1 : Excursion in Quantum Mechanics
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Unit 2 - Week 1 :
Excursion in Quantum Mechanics Youtu
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1) The wave-function of a particle must be "normalizable", because 1 point
Week 1 :
Excursion in the particle's momentum must be conserved.
Quantum the particle's charge must be conserved.
Mechanics
the particle must exist somewhere in the space.
Quantum the particle can not exist at two places at the same time.
Mechanics:
Concept of No, the answer is incorrect.
Wave Particle, Score: 0
Schrodinger's
Accepted Answers:
Equation
the particle must exist somewhere in the space.
Quantum
Mechanics: 2) Which of the following is not a valid quantum mechanical wave-function? 1 point
Particle in a Box
Quantum
Mechanics:
Particle in a Box
(i)
- Continued, (ii)
Harmonic
(iii)
Oscillator
(iv)
Quiz :
Assignment 1 No, the answer is incorrect.
Score: 0
Assignment 1
solution Accepted Answers:
(iv)
Week 2 :
Excursion in 3) Consider a particle of mass m, momentum 𝑝⃗ and position 𝑟 ⃗ . In classical mechanics, the 1 point
Solid State
Physics particle's orbital angular momentum is given by a vector 𝐿⃗ , defined by
𝐿⃗ = 𝑟 ⃗ × 𝑝⃗ .
Week 3 : Density The corresponding quantum mechanics operator in cartesian coordinate system is given by
of States, Fermi
Function and
Doping
−𝑖ℏ 𝑟 ⃗ × ∇⃗
( )
Week 4 :
Recombination-
Generation, 𝑖ℏ
(
𝑟 ⃗ × ∇⃗
)
Charge
Transport and
Continuity
−𝑖ℏ ∇⃗ × 𝑟 ⃗
Equation ( )
https://onlinecourses-archive.nptel.ac.in/noc18_ee32/unit?unit=7&assessment=11 1/4
Week 5 : Metal- −𝑖ℏ ∇⃗ . 𝑟 ⃗

( )
Semiconductor
Junctions No, the answer is incorrect.
Score: 0
Week 6 : PN
Junction Accepted Answers:
−𝑖ℏ 𝑟 ⃗ × ∇⃗
( )
Week 7 : Bipolar
Junction 4) In electron beam lithography patterns are exposed with electrons. The small wavelength of 1 point
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Transistors
electrons helps to achieve small feature sizes (in order of nm). Assume an electron gun of energy
100 keV. What is the wavelength of these electrons?
Week 8 : Metal Twitte
Assume the mass of electron = and Planck's constant, ℎ J.s .
−31 −34
Oxide 9.109 × 10 kg = 6.626 × 10
Semiconductor Neglect the relativistic effect.

Capacitor Youtu
(MOSCAP) and 1.5 nm
CV 0.0039 nm
Characteristics Linked
3.9 nm
Week 9: 0.015 nm
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MOSFET: I
No, the answer is incorrect. plus
Week 10: Score: 0
MOSFET: II Accepted Answers:
0.0039 nm
Week 11: Circuits
5) An electron in an infinite one-dimensional potential well jumps from the 𝑛 = 3 energy level 1 point
Week 12: Thin to the ground state energy level and in doing so emits a photon of wavelength 20.9 nm . What is the
Film Transistors width of the well?
(TFTs), Tutorial Assume electron mass = 9.11𝑒 − 31 kg, ℎ = 6.626𝑒 − 34 J.s and 𝑐 = 3𝑒8 m/s.
Sessions
0.225 nm
1.015 nm
22.5 nm
0.02 nm
No, the answer is incorrect.

Score: 0
Accepted Answers:
0.225 nm
6) A wave function is given by 1 point

⎧ 0, if 𝑥 < 0
⎪
𝜓 (𝑥) = ⎨ 𝐴𝑥(𝑑 − 𝑥), if 0 ≤ 𝑥 ≤ 𝑑
⎪
⎩ 0, if 𝑥 > 𝑑
What is the value of A?
√2/𝐿
‾‾‾‾
−5/2
√30
‾
‾‾𝐿
−3/5
√15
‾
‾‾𝐿

Score: 0
Accepted Answers:
−5/2
√30
‾
‾‾𝐿
7) An electron is bound in an infinite one-dimensional potential well of width 7.3 nm along the 1 point
x-axis. The system is at state 𝑛 = 2. The probability of finding the electron per nm length at
𝑥 = 0.3 nm is closest to
zero
0.018
0.024
0.0063

Score: 0
Accepted Answers:
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0.018
8) Electrons are accelerated through an electric potential V and then fall on a pair of slits that 1 point
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have a separation of 100 nm . The resultant interference pattern indicates that the electrons have a
wavelength of 1 nm .
Youtu
i) What is the value of the accelerating electric potential V ?
ii) After passing though the slits what is the minimum spread in the electron's momentum in the direction
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parallel to the plane of the slits and perpendicular to the average path of the electrons?
Assume ℎ and electron mass 𝑚 kg . Ignore any relativistic
−34 −31
= 6.626 × 10 J.s = 9.11 × 10
effect.
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i) 1 V
ii) infinity
i) 1 V
ii) zero
i) 1.5 V
ii) 3.87 e-25 kg.m/s
i) 1.5 V
ii) 5.27 e-28 kg.m/s

Score: 0
Accepted Answers:
i) 1.5 V
ii) 5.27 e-28 kg.m/s
9) The wave-function of a particle at a state 'n' is given by 1 point
‾‾‾) 𝑐𝑜𝑠 (3𝜋𝑥/𝑎) , for |𝑥| ≤ 𝑎/2

(√2/𝑎
𝜓 (𝑥) = .
{
0, for |𝑥| > 𝑎/2
What is the average momentum of the particle at the state 'n'.
zero
ℏ𝜋/𝑎
3ℏ𝜋/𝑎
None of the above.

Score: 0
Accepted Answers:
zero
10)Consider a particle of mass m moving in the one-dimensional potential 𝑉 (𝑥) = 𝐴𝛿(𝑥) for 1 point
|𝑥| < 𝑎 and 𝑉 (𝑥) = ∞ elsewhere. The value of 𝐴 for which the ground state energy of the system
vanishes is
2
ℏ
𝑚𝑎
2
ℏ
−
𝑚𝑎
2𝑚𝑎
− 2
ℏ

Score: 0
Accepted Answers:
2
−
ℏ
𝑚𝑎
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1/22/2020 Semiconductor Devices and Circuits - - Unit 3 - Week 2 : Excursion in Solid State Physics

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Unit 3 - Week 2 :
Excursion in Solid State Physics Youtu
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1) Number of lattice points per unit cell in a body-centered cubic lattice is 1 point
Week 1 :
Excursion in 1
Quantum 2
Mechanics
3
Week 2 : 4
Excursion in
Solid State
Physics Score: 0
Accepted Answers:
Solids :
2
Formation of
Bands, Kronig- 2) Gallium Arsenide (GaAs) has a zinc-blend crystal structure (which is equivalent to face- 1 point
Penney Model
centered cubic lattice with two atoms per lattice point). Assume a lattice spacing of 𝑎 = 5.65 angstrom.
Solids : Kronig- How many numbers of atoms per cc are there in GaAs?
Penney Model -
Continued
22
Solids : 4.44 × 10
Electrons and
Holes 22
2.22 × 10
Solids :
Electrons and 8
1.42 × 10
Holes -
Continued
15
2.51 × 10
Solids : Crystals
Quiz : No, the answer is incorrect.

Assignment 2 Score: 0
Assignment 2 Accepted Answers:

solution 4.44 × 10
22
Week 3 : Density 3) X-rays of wavelength 0.5 angstrom undergo a second order reflection at a glancing angle of 1 point
of States, Fermi 10
∘
from a crystal. Find the spacing (in angstrom unit) of the atomic planes in the crystal.
Function and
Doping 0.96
1.44
Week 4 :
Recombination- 164.1
Generation, 2.88
Charge
Transport and No, the answer is incorrect.
Continuity Score: 0
Equation
Accepted Answers:
2.88
Week 5 : Metal-
Semiconductor 4) Consider a semiconductor whose energy dispersion relation for the conduction band is 1 point
Junctions
defined by
2
𝐸 = 𝐴 + 𝐵(𝑘 − 𝐶 )
Week 6 : PN
Junction where, A, B and C are constants. Assume the mobility of the electron is 𝜇0 . Find the mean free time of
electrons in the conduction band.
Week 7 : Bipolar
Junction 𝜇 Faceb
Transistors 0
2
2𝐵𝑞ℏ
Week 8 : Metal 2
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Oxide 𝐵𝑞ℏ
Semiconductor 𝜇
0
Capacitor Youtu
(MOSCAP) and 𝜇 ℏ
0
2
CV 2𝐵𝑞
Characteristics None of the above Linked
Week 9: No, the answer is incorrect.

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MOSFET: I Score: 0
plus
Accepted Answers:
Week 10: 𝜇 ℏ
2
MOSFET: II
0
2𝐵𝑞
Week 11: Circuits 5) Assume that the electrons in an n-doped crystalline silicon suffer 1 point
scattering only due to i) the lattice vibration and ii) the interaction with impurity
Week 12: Thin ions. At an extremely low temperature region, mobility _________ with increase in
Film Transistors temperature. (Fill in the gap)
(TFTs), Tutorial
Sessions increases
decreases
remains constant
becomes zero

Score: 0
Accepted Answers:
increases
6) Consider a 1D crystal with lattice constant 'a' and crystal length 'L'. Where do you observe 1 point
the energy band gaps on the energy dispersion graph (E-k diagram)?
At 𝑘 = 𝑛
𝜋
, where n is an integer
𝑎
At 𝑘 = 𝑛
𝜋
, where n is an integer
𝐿
At 𝑘 = 𝑛
𝜋
, where n is any real number
𝑎
At 𝑘 = 𝑛
𝜋
, where n is any real number
𝐿

Score: 0
Accepted Answers:
At 𝑘 , where n is an integer
𝜋
= 𝑛
𝑎
7) What is a Brillouin zone? 1 point
A region of position-space where the electrons can reside within.

A region of energy-space that contains all the allowed energy levels.
Another name for the unit cell of the crystal.
A region of k-space that contains all the unique solutions of the wave-equation.
Score: 0
Accepted Answers:
A region of k-space that contains all the unique solutions of the wave-equation.
8) Consider the following 1D band structure: 1 point

𝐸(𝑘𝑥 ) = ℏ𝑣𝐹 |𝑘𝑥 |
where, 𝑣𝐹 is a velocity. What is the effective mass?

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∗
𝑚 = ℏ𝑣𝐹
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∗
𝑚 = ∞
Youtu
∗
𝑚 = 0
Not defined Linked

Score: 0 Googl
Accepted Answers: plus
Not defined
9) Bloch's theorem for a periodic potential is given by, 𝜓 (𝑥 + 𝑎) = 𝜓 (𝑥)𝑒𝑖𝑘𝑎 , where '𝑎 ' is the 1 point
lattice constant. Assume that 𝑢(𝑥) is the periodic lattice potential given by 𝑢(𝑥 + 𝑎) = 𝑢(𝑥). Which of
the following represents an equivalent mathematical form of Bloch's theorem?
𝑖𝑘𝑥
𝜓 (𝑥 + 𝑎) = 𝑢(𝑥)𝑒
𝑖𝑘𝑎
𝜓 (𝑥 + 𝑎) = 𝑢(𝑥 + 𝑎)𝑒
𝑖𝑘𝑥
𝜓 (𝑥) = 𝑢(𝑥)𝑒
𝑖𝑘(𝑥+𝑎)
𝜓 (𝑥) = 𝑢(𝑥)𝑒

Score: 0
Accepted Answers:
𝑖𝑘𝑥
𝜓 (𝑥) = 𝑢(𝑥)𝑒
10)Molybdenum (Mo) crystallizes in a body-centered cubic structure with a lattice constant of 1 point
𝑎 = 3.147 angstrom. If the radius of a Mo atom is one-half of the center-to-center spacing of the
nearest neighbours, compute the percent of the cubic volume, 𝑎3 , that is occupied by Mo atoms.
50 %
68 %
32 %
78 %

Score: 0
Accepted Answers:
68 %
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1/22/2020 Semiconductor Devices and Circuits - - Unit 4 - Week 3 : Density of States, Fermi Function and Doping

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Unit 4 - Week 3 :
Density of States, Fermi Function and Doping Youtu
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1) Given an energy band diagram, how can one find the electric field? 1 point
Week 1 :
Excursion in
Quantum It is proportional to 𝐸 𝐶 .
Mechanics
It is proportional to minus 𝐸 𝐶 .
Week 2 :
Excursion in
Solid State It is proportional to the slope of 𝐸 𝐶 .
Physics
It is proportional to the minus of the slope of 𝐸 𝐶 .
Week 3 : Density
of States, Fermi No, the answer is incorrect.
Function and Score: 0
Doping
Accepted Answers:
Density of It is proportional to the slope of 𝐸 𝐶 .
States
2) Consider an n-type semiconductor at 0𝐾 temperature. Where do you expect the Fermi level 1 point
Density of to be?
States -
Continued, Inside the valence band.
Fermi Function
Inside the conduction band.
Fermi Function, Near the middle of the band-gap.
Carrier
Concentration Between the donor level and the conduction band.
Doping No, the answer is incorrect.

Score: 0
Doping -
Continued Accepted Answers:
Between the donor level and the conduction band.
Quiz :
Assignment 3 3) An intrinsic Si wafer is doped with 5 phosphorous atoms and 6 boron 1 point
16 16
× 10 /𝑐𝑐 × 10 /𝑐𝑐
Assignment 3 atoms. Assume that at 300𝐾 , the intrinsic carrier concentration in Si is 10 /𝑐𝑐 and all the dopant
10
Solution atoms are ionized. What is the location of the Fermi level with respect to the conduction band edge at
300𝐾 ?
Week 4 :
(Assume the effective density of states at the conduction band edge, 𝑁𝐶 /𝑐𝑐)
19
Recombination- = 2.82 × 10
Generation,
Charge 0.2 eV
Transport and 0.56 eV
Continuity
Equation 0.16 eV
0.92 eV
Week 5 : Metal-
Semiconductor No, the answer is incorrect.
Junctions Score: 0
Accepted Answers:
Week 6 : PN 0.92 eV
Junction
4) As temperature increases from 0K to high temperature, the carrier concentration goes 1 point
Week 7 : Bipolar through three regions. In what order does the transition occur?
Junction
Transistors Intrinsic, extrinsic, freezeout
Freezeout, extrinsic, intrinsic,
Week 8 : Metal Freezeout, intrinsic, extrinsic
Oxide Faceb
Semiconductor Intrinsic, freezeout, extrinsic
Capacitor
(MOSCAP) and No, the answer is incorrect. Twitte
CV Score: 0
Characteristics Accepted Answers: Youtu
Freezeout, extrinsic, intrinsic,
Week 9:
MOSFET: I 5) An intrinsic germanium wafer is doped with a shallow acceptor density of 3𝑛𝑖 /2 , where 𝑛𝑖 is 1 point
Linked
the intrinsic carrier concentration. At temperature T, all the acceptors are ionized. Calculate the hole
Week 10: density at temperature T.
MOSFET: II Googl
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Week 11: Circuits 2𝑛𝑖
Week 12: Thin 3𝑛𝑖 /2

Film Transistors
(TFTs), Tutorial
Sessions 𝑛𝑖 /2
𝑛𝑖

Score: 0
Accepted Answers:
2𝑛𝑖
6) Under which condition the position of the Fermi level in an intrinsic bulk semiconductor lies 1 point
exactly at the middle of the band-gap at a non-zero temperature T?
When effective mass of electrons = effective mass of holes.

When mobility of electrons > mobility of holes
When the energy band-gap > 2kT
Fermi level of an intrinsic semiconductor will always lie at the middle of the band-gap.

Score: 0
Accepted Answers:
When effective mass of electrons = effective mass of holes.
7) Assume two semiconductors A and B have the same effective density of states both at the 1 point
conduction band edge (𝑁𝐶 ) and the valence band edge (𝑁𝑉 ). The intrinsic carrier concentration of A
and B at 300𝐾 are respectively 1.5𝑒10 𝑐𝑚 −3 and 3.2𝑒7 𝑐𝑚 −3. What is the band-gap of
semiconductor B if the semiconductor A has a band-gap of 1.12 𝑒𝑉 ?
1.12 eV
1.44 eV
1.92 eV
0.74 eV

Score: 0
Accepted Answers:
1.44 eV
8) The probability of a state being filled by an electron at energy 𝐸 𝐶 − 𝑘𝑇 is equal to the 1 point
probability of a state being filled by a hole at energy 𝐸 𝐶 − 3𝑘𝑇 . Where is the Fermi level located?
3𝑘𝑇 above the valence band edge.
3𝑘𝑇 below the valence band edge.
2𝑘𝑇 above the conduction band edge.
2𝑘𝑇 below the conduction band edge.

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Score: 0 Twitte
Accepted Answers:
2𝑘𝑇 below the conduction band edge.
Youtu
9) A silicon wafer is doped with 1016𝑐𝑚
−3
arsenic atoms. The donor level 𝐸 𝑑 is located at 1 point
54 𝑚𝑒𝑉 below 𝐸 𝐶 . What percentage of the donor atoms are ionized at 𝑇 = 77 𝐾 ? Linked
[Assume, 𝑁𝐶 and the degeneracy factor of donor level, 𝑔𝐷 = 2]
18 −3
(𝑇 = 77𝐾 ) = 4.2 × 10 𝑐𝑚
100 % Googl
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65.5 %
22.3 %
10.9 %

Score: 0
Accepted Answers:
22.3 %
10)For a certain semiconductor, the densities of states in the conduction and valence bands are 1 point
𝑔𝐶 (𝐸) = 𝐴 (𝐸 − 𝐸 𝐶 ) and 𝑔𝑉 (𝐸) = 𝐵 (𝐸 𝑉 − 𝐸) respectively, where 𝐴 and 𝐵 are two non-zero
constants. Assume Boltzmann distribution for both types of carrier. Consider the reference potential
energy level at the valence band edge, i.e. 𝐸 𝑉 = 0. 𝐸 𝐶 is the energy at the conduction band edge. If
𝐴 = 2𝐵, compute the intrinsic Fermi energy at 300 𝐾 .
𝐸 𝐶 /2 − 9 𝑚𝑒𝑉
𝐸 𝐶 /2 + 9 𝑚𝑒𝑉
𝐸 𝐶 − 26 𝑚𝑒𝑉
𝐸 𝐶 + 26 𝑚𝑒𝑉

Score: 0
Accepted Answers:
𝐸 𝐶 /2 − 9 𝑚𝑒𝑉
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1/22/2020 Semiconductor Devices and Circuits - - Unit 5 - Week 4 : Recombination-Generation, Charge Transport and Continuity Eq…

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Unit 5 - Week 4 :
Recombination-Generation, Charge Transport and Youtu
Continuity Equation Linked
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outline Assignment 4 plus
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1) What do you understand by the term "diffusion length" of an electron inside a p-type Si? 1 point
Week 1 :
Excursion in The distance between two Si atoms in the crystal structure
Quantum The instantaneous distance a free electron travels between two successive collisions.
Mechanics
The average distance a free electron travels between two successive collisions.
Week 2 : The average distance a free electron travels before recombining with a hole.
Excursion in
Solid State
Physics Score: 0
Accepted Answers:
Week 3 : Density The average distance a free electron travels before recombining with a hole.
of States, Fermi
Function and 2) Which of the following defines a thermal equilibrium completely? 1 point
Doping
Detailed balance of individual processes.
Week 4 : Steady-state condition, but not the detailed balance of individual processes.
Recombination-
Recombination rate = generation rate.
Generation,
Charge Total recombination = 0.
Transport and
Continuity No, the answer is incorrect.
Equation Score: 0
Accepted Answers:
Recombination
and Generation Detailed balance of individual processes.
Recombination 3) The minority carrier life-time of electrons in a certain semiconductor is 9𝑒 − 12 𝑠 . The 1 point
and Generation electron mobility is 350 𝑐𝑚 /𝑉 . 𝑠. If the thermal voltage is 25 𝑚𝑉 , the diffusion length of electrons is
2
- Continued
________ 𝜇𝑚. (Fill in the gap)
Recombination
and Generation 0.1
- Continued, 2.7
Charge
8.9
Transport
355
Charge
Transport - No, the answer is incorrect.
Continued Score: 0
Continuity Accepted Answers:
Equation 8.9
Quiz :
4) An intrinsic Si wafer is doped with 1016 /𝑐𝑐 donors. 10
12
photons/sec light is irradiated on 1 point
Assignment 4
the Si per 𝑐𝑚 volume. Assume each photon generates one electron-hole pair. Under this light
3
Assignment 4 illumination, location of the Fermi levels inside Si with respect to the intrinsic Fermi level are ______
Solution 𝑒𝑉 and _______ 𝑒𝑉 as viewed by electrons and holes respectively. (Fill in the gaps)
Assume the intrinsic carrier concentration = and thermal voltage = .
10
10 /𝑐𝑐 26 𝑚𝑉
Week 5 : Metal-
Semiconductor 0.36, 0.36
Junctions
0.36, 0.12
Week 6 : PN 0.12, 0.12
Junction 0.12, 0.36
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Week 7 : Bipolar No, the answer is incorrect.
Junction Score: 0
Transistors Twitte
Accepted Answers:
0.36, 0.12
Week 8 : Metal Youtu
Oxide 5) An intrinsic Si wafer is doped with 1016 1 point
/𝑐𝑐arsenic atoms. If a small amplitude low
Semiconductor
Capacitor frequency alternating voltage of 𝑣𝑖𝑛 is applied across a block of this doped Si, a current 𝑖𝑖𝑛 flows
Linked
(MOSCAP) and through. Assume the block is a cube of side 5 𝜇𝑚 and all the dopant atoms are ionized. Find
∂𝑣 𝑖𝑛
.
CV ∂𝑖 𝑖𝑛
Characteristics Assume, intrinsic carrier concentration in Si = 10

10
/𝑐𝑐, electron mobility = 2
1000 𝑐𝑚 /𝑉 . 𝑠 and hole
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mobility = 350 𝑐𝑚 /𝑉 . 𝑠.
2
plus
Week 9:
MOSFET: I
5.83 kΩ
Week 10:
MOSFET: II 3.57 kΩ
Week 11: Circuits

1.25 kΩ
Week 12: Thin
Film Transistors 0.13 Ω
(TFTs), Tutorial
Sessions No, the answer is incorrect.
Score: 0
Accepted Answers:
1.25 kΩ
6) What is the location of the traps inside the band-gap that produces the most efficient trap- 1 point
assisted recombination?
Assume that the degeneracy factor of the trap = 1 and the minority carrier lifetimes of holes and
electrons are equal.
Very close to the conduction-band.

Near the middle of the band-gap.
Very close to the valence-band.
It is independent of the position of the traps inside the band-gap.

Score: 0
Accepted Answers:
Near the middle of the band-gap.
7) When there are multiple recombination mechanisms present, how do you determine the 1 point
effective minority carrier lifetime for all processes combined?
Add the lifetimes of individual processes.

Multiply the lifetimes of individual processes.
Add the inverse of the lifetimes of individual processes and then take the inverse of the sum.
Take the maximum of lifetimes of individual processes.

Score: 0
Accepted Answers:
Add the inverse of the lifetimes of individual processes and then take the inverse of the sum.
8) 1 point
Assume the following parameters for a Si wafer:
Mean free time of hole, 𝜏𝑝 = 0.1 𝑝𝑠 .
Electron rest mass, 𝑚 0 = 9.1𝑒 − 31 𝑘𝑔 .
Hole effective mass, 𝑚 ∗𝑝 = 0.39𝑚 0 .
Find the hole drift velocity at field, 𝜉 = 1𝑒3 𝑉 /𝑐𝑚.
4.51 e5 cm/s
1.76 e5 cm/s
2.1 e7 cm/s Faceb
1.02 e6 cm/s
No, the answer is incorrect. Twitte

Score: 0
Accepted Answers: Youtu
4.51 e5 cm/s
9) Assume a p-type Si sample has the following parameters at room temperature (300 𝐾 ) : Linked
1 point
/𝑐𝑐, 𝜇𝑛 = 300 𝑐𝑚 /𝑉 . 𝑠, 𝜏𝑛 = 1 𝜇𝑠 .
17 2
𝑁𝐴 = 10
The sample is uniformly illuminated with light, as shown in the following figure, resulting in an optical Googl
generation rate 𝐺𝐿 = 10 𝑐𝑚 −3 𝑠−1 , but all the incoming photons are absorbed in a thin layer of
24 plus
10 𝑛𝑚 at the surface. Find the steady-state excess electron concentration at 𝑥 = 1 𝜇𝑚.
Assume the sample extends to infinity along the x-axis.
1.2 e10 /cc

0
5.1 e17 /cc
3.5 e14 /cc

Score: 0
Accepted Answers:
3.5 e14 /cc
10)Consider the sample given in the previous problem (question no. 9) with the following 0 points
changes:
Assume that the semiconductor is only 5 𝜇𝑚 long instead of infinitely extended.
Also assume that there is an "ideal ohmic contact" at 𝑥 = 𝐿 = 5 𝜇𝑚 , which always enforces
equilibrium condition.
Now find the steady-state excess electron concentration at 𝑥 = 1 𝜇𝑚.
1.2 e10 /cc

0
5.1 e17 /cc
3.5 e14 /cc

Score: 0
Accepted Answers:
5.1 e17 /cc
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1/22/2020 Semiconductor Devices and Circuits - - Unit 6 - Week 5 : Metal-Semiconductor Junctions

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Unit 6 - Week 5 :
Metal-Semiconductor Junctions Youtu
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The due date for submitting this assignment has passed. Due
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on 2018-09-12, 23:59 IST.
the portal
1) Assume an arbitrary metal forms a Schottky contact with an n-type semiconductor. How does 1 point
Week 1 : the Schottky barrier height vary if the doping in the semiconductor decreases?
Excursion in
Quantum increases
Mechanics decreases
remains unchanged
Week 2 :
Excursion in becomes zero
Solid State
Physics No, the answer is incorrect.
Score: 0
Week 3 : Density Accepted Answers:
of States, Fermi remains unchanged
Function and
Doping 2) An arbitrary metal is deposited on a lightly doped n-type semiconductor. Work-function of the 1 point
metal is much higher than the work-function of the semiconductor. Which of the following steps will make
Week 4 : the metal-semiconductor contact an ohmic one?
Recombination- Assume an ideal contact with no surface states.
Generation,
Charge
Doping the semiconductor heavily (degenerate doping) with an n-type impurity near the contact
Transport and
Continuity region.
Equation Doping the semiconductor heavily with a p-type impurity far away from the contact .
Doping the semiconductor lightly with a p-type impurity near the contact to make the
Week 5 : Metal- semiconductor an intrinsic one.
Semiconductor
Junctions No further processing is required, as it is already an ohmic contact.
Junctions
Score: 0
Metal
Semiconductor
Accepted Answers:
Junctions Doping the semiconductor heavily (degenerate doping) with an n-type impurity near the contact region.
Schottky 3) In a certain Schottky contact a negative bias is applied on the metal with respect to the n- 1 point
Contact : type semiconductor. Compared to the equilibrium, the magnitude of the peak electric field ________ and
Electrostatics the width of the depletion region ________. (Fill in the gaps)
Schottky
Contact : decreases, increases
Current-Voltage increases, decreases
(IV)
decreases, decreases
Characteristics
increases, increases
Schottky
Contact : IV No, the answer is incorrect.
Characteristics - Score: 0
Continued
Accepted Answers:
Quiz : increases, increases

Assignment 5
4) Consider a (chromium) - (n-type silicon) metal-semiconductor junction. The semiconductor is 1 point
Assignment 5 doped with 𝑁𝐷 = 10 𝑐𝑚 −3 . Calculate the Shottky barrier height (in eV) and the built-in potential (in
17
Solution
V) at 𝑇 = 300 𝐾 .
Week 6 : PN Use the following parameters, if required:
Junction Work-function of chromium = 4.5 𝑒𝑉
Electron affinity of silicon = 4.05 𝑒𝑉
Week 7 : Bipolar Band gap of silicon = 1.12 𝑒𝑉 Faceb
Junction 𝑁𝐶 = 2.82 × 10
19
/𝑐𝑐, 𝑁𝑉 = 1.83 × 10
19
/𝑐𝑐 (for silicon)
Transistors
Dielectric constant of silicon = 11.9 .
Twitte
Week 8 : Metal 0.35, 0.2
Oxide
Semiconductor 0.45, 0.3 Youtu
Capacitor 0.67, 0.53
(MOSCAP) and 0.76, 0.62
CV Linked
Characteristics No, the answer is incorrect.
Score: 0 Googl
Week 9: plus
MOSFET: I Accepted Answers:
0.45, 0.3
Week 10: 5) Consider the metal-semiconductor junction given in the previous question (question no. 4). 1 point
MOSFET: II
Instead of n-type doping, now consider the p-type doped Si with the dopant concentration,
Week 11: Circuits 𝑁𝐴 = 10

17
𝑐𝑚
−3
. What will be the Schottky barrier height (in eV) and the buit-in potential (in V)?
0.35, 0.2
Week 12: Thin
Film Transistors 0.45, 0.3
(TFTs), Tutorial 0.67, 0.53
Sessions
0.76, 0.62

Score: 0
Accepted Answers:
0.67, 0.53
6) Consider the (chromium) - (n-type Si) MS junction given in the question number 4. Calculate 1 point
the following quantities when the junction is reverse biased with 5 𝑉 :
i) the depletion layer width (in 𝜇𝑚)
ii) the electric field at the metal semiconductor interface (in 𝑉 /𝑐𝑚)
i) 0.26
ii) 3.95e5
i) 0.53
ii) 1e5
i) 0.06
ii) 9.12e4
i) 0.02
ii) 1e4

Score: 0
Accepted Answers:
i) 0.26
ii) 3.95e5
7) Consider the (chromium) - (n-Si) MS junction given in question 4. The junction is subjected to 1 point
a 5 𝑉 reverse bias. Calculate i) the potential drop across the semiconductor (in 𝑉 ) and the junction
capacitance per unit area (in 𝑛𝐹 /𝑐𝑚 2 ).
i) zero
ii) zero
i) 0.3
ii) 100
i) 4.7
ii) 28.9
i) 5.3
ii) 40.5

Score: 0
Accepted Answers:
i) 5.3 Faceb
ii) 40.5
8) The capacitance, 𝐶 of a Schottky diode is given by the relation 1 Twitte

, with 𝑉 the 1 point
= 𝑎 − 𝑏𝑉
2
𝐶
applied voltage. 𝑎 and 𝑏 are constant coefficients. Calculate i) the built-in potential (𝜙𝑏𝑖 ) and ii) the
donor concentration (𝑁𝐷 ). Youtu
Assume, the permittivity of semiconductor = 𝜖𝑠 and the junction cross-section area = 𝐴.
Linked
𝜖 𝑠 𝑞𝑁 𝐷
i) 𝜙𝑏𝑖 ii) 𝑁𝐷
2
= =
2𝑏 𝜖𝑠 𝑁 𝐷 𝑞𝑎
Googl
plus
2
𝜖 𝑠 𝐴 𝑞𝑁 𝐷 𝑎
2
= =
2 2
𝜖𝑠 𝐴 𝑞𝑏
2 𝑎𝑏𝐴
= =
𝜖 𝑠 𝑞𝑁 𝐷 𝑎 𝜖𝑠 𝑞𝑏
2𝑁 𝜖𝑠
i) 𝜙𝑏𝑖 =
𝐷
ii)
𝜖𝑠 𝑞𝐴𝑎 𝑞𝑁
𝐷
𝐴𝑏

Score: 0
Accepted Answers:
2
𝜖 𝑠 𝐴 𝑞𝑁 𝐷 𝑎
i) 𝜙𝑏𝑖 = ii) 𝑁𝐷 =
2
2
2 𝜖𝑠 𝐴 𝑞𝑏
9) A metal semiconductor contact is made with Au (work function = 5.1 𝑒𝑉 ) and n doped Si 1 point
with 𝑁𝐷 = 1𝑒15/𝑐𝑐 . If the metal contact is kept 5 𝑉 below the semiconductor, what is the electric field
in the semiconductor at the distance of 1 𝜇𝑚 from the junction at 𝑇 = 300 𝐾 ?
Assume, 𝑁𝐶 = 2.82𝑒19 /𝑐𝑐, electron affinity of Si = 4.05 𝑒𝑉 and the relative permittivity of Si
= 11.8
−1.52 𝑘𝑉 /𝑐𝑚
1.52 𝑘𝑉 /𝑐𝑚
−26.76 𝑘𝑉 /𝑐𝑚
26.76 𝑘𝑉 /𝑐𝑚

Score: 0
Accepted Answers:
−26.76 𝑘𝑉 /𝑐𝑚
10)Which of the following is not correct regarding an M-S junction? 1 point
Thermionic emission depends on the shape of the band bending inside the semiconductor near
the junction.
Tunneling current through a triangular barrier at the junction increases with the doping
concentration in the semiconductor.
Diffusion transport through a junction is negligible in case of reverse bias.
Thermionic emission transport enhances with the increase in temperature.

Score: 0
Accepted Answers:
Thermionic emission depends on the shape of the band bending inside the semiconductor near the
junction.
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1/22/2020 Semiconductor Devices and Circuits - - Unit 7 - Week 6 : PN Junction

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Unit 7 - Week 6 : PN
Junction Youtu
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Week 1 : Note: Use thermal voltage = 0.026 V at 300 K.

Excursion in
Quantum
Mechanics 1) While analysing the electrostatics of an ideal PN junction, we used "depletion 1 point
approximation". What does this approximation mean?
Week 2 :
Excursion in The term refers to an undoped region near the PN junction.
Solid State The term refers to a region near the PN junction where the electron and hole concentrations are
Physics
much less than the intrinsic carrier concentration.
The term refers to a region near the PN junction where the electron and hole concentrations are
Week 3 : Density
of States, Fermi much less than the doping densities.
Function and None of the above
Doping
Week 4 : Score: 0
Recombination- Accepted Answers:
Generation,
Charge The term refers to a region near the PN junction where the electron and hole concentrations are much les
Transport and than the doping densities.
Continuity
Equation 2) Consider an ideal silicon PN junction at 𝑇 = 300 𝐾 with doping densities 1 point
/𝑐𝑐 and 𝑁𝐷 = 10 /𝑐𝑐. Assume intrinsic carrier concentration, 𝑛𝑖 /𝑐𝑐 .
17 15 10
𝑁𝐴 = 10 = 10
Week 5 : Metal- Calculate the built-in potential in the junction.

Semiconductor
Junctions 0.56 V
0.9 V
Week 6 : PN
0.25 V
Junction
0.72 V
Schottky
Contact : Small No, the answer is incorrect.
Signal Score: 0
Impedance
Accepted Answers:
PN Junction : 0.72 V
Electrostatics
3) The current through an ideal PN diode at 300 𝐾 is 2 𝑚𝐴 when a 0.1 𝑉 forward bias is 1 point
PN Junction : IV applied. Find the reverse saturation current.
Characteristics
PN Junction :
Small Signal 43.7 𝜇𝐴
Impedance
PN Junction : 12.5 𝜇𝐴
Non-idealities
Quiz : 22.5 𝑛𝐴
Assignment 6
105.5 𝜇𝐴
Assignment 6
Solution
Week 7 : Bipolar Score: 0
Junction Accepted Answers:
Transistors 43.7 𝜇𝐴
Faceb
Week 8 : Metal 4) Assume an ideal PN junction with the doping density in P-side is higher compared to that in 1 point
Oxide n-side. Which of the following comments is correct regarding the spread of the depletion region in n and
Semiconductor p sides. Twitte
Capacitor
(MOSCAP) and Depletion region is extended more inside p-doped region compared to n-doped region.
CV Youtu
Characteristics Depletion region is extended more inside n-doped region compared to p-doped
region.
Week 9: Depletion region is extended equally inside n and p doped regions. Linked
MOSFET: I
Depletion widths inside both n and p doped regions become zero at thermal equilibrium.
Googl
Week 10: No, the answer is incorrect. plus
MOSFET: II Score: 0
Accepted Answers:
Week 11: Circuits
Depletion region is extended more inside n-doped region compared to p-doped region.
Week 12: Thin 5) The magnitude of the current through a practical PN junction diode, which is subjected to a 1 point
Film Transistors
low reverse bias, is observed to increase slowly with the increase in applied voltage in the reverse
(TFTs), Tutorial
Sessions direction. Which one of the following is the most possible reason for this non-ideal behavior?
Recombination of electron-hole pairs in the depletion region.

Impact of series resistance.
High level injection of minority carriers that surpass the background doping concentration.
Generation of electron-hole pairs in the depletion region.

Score: 0
Accepted Answers:
Generation of electron-hole pairs in the depletion region.
6) Consider an ideal Si PN junction diode with 𝑁𝑎 = 10

18
𝑐𝑚
−3
and 𝑁𝑑
16
= 10 𝑐𝑚
−3
. The 1 point
layout area of the diode is 10 . Calculate the junction capacitance (depletion capacitance) at
−4 2
𝑐𝑚
𝑇 = 300 𝐾 .
Assume 𝑛𝑖 = 10
10
𝑐𝑚
−3
and the dielectric constant of Si = 11.8 .
12.56 pF
35.6 nF
3.14 pF
1.05 pF

Score: 0
Accepted Answers:
3.14 pF
7) An ideal PN junction diode is forward biased moderately such that the applied bias is much 1 point
greater than the thermal voltage. How much voltage is needed to increase the diode current by a factor
of 10 at 𝑇 = 300 𝐾 ?
26 mV
60 mV
85 mV
120 mV

Score: 0
Accepted Answers:
60 mV
8) Following figure shows the spatial distribution of excess minority carrier (hole) concentration 1 point
on the n-side of two ideal 𝑃 + 𝑁 diodes A and B maintained at the room temperature.
Assume low-level injection condition prevails. The P-side doping, N-side doping, the cross-sectional area
Faceb
and the hole mobility are the same in both the diodes. Which of the following statements is NOT correct?
Both the junctions are forward biased. Twitte

Diode A has a higher applied bias.
Diode A has a higher minority carrier (hole) lifetime. Youtu
Diode A has a higher current.
No, the answer is incorrect. Linked

Score: 0
Accepted Answers: Googl
Diode A has a higher minority carrier (hole) lifetime. plus
9) Semiconductor devices often contain "high-low" junctions for which the doping density 1 point
changes magnitude, but not sign. The figure below shows such a high-low step junction.
Calculate the built-in potential of the above high-low junction at 𝑇 = 300 𝐾
0V
0.026 V
0.18 V
0.39 V

Score: 0
Accepted Answers:
0.18 V
10)The figure below shows the doping profile in a PN junction diode, where a thin intrinsic layer 1 point
is inserted at the junction.
Calculate the total depletion width at 𝑇 = 300 𝐾 .

Assume the depletion approximation and the dielectric constant of the material = 11.8 .
0.7 𝜇𝑚
25.1 𝜇𝑚
5.6 𝜇𝑚
0.48 𝜇𝑚

Score: 0
Accepted Answers:
0.7 𝜇𝑚
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1/22/2020 Semiconductor Devices and Circuits - - Unit 8 - Week 7 : Bipolar Junction Transistors

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Unit 8 - Week 7 :
Bipolar Junction Transistors Youtu
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1) Which of the following statements is true with regards to the BJT ? 1 point
Week 1 :
Excursion in The base width must be designed to be much larger than the minority carrier diffusion length
Quantum The base width must be designed to be much smaller than the minority carrier diffusion length
Mechanics
The base region should be heavily doped
Week 2 : None of the above

Excursion in
Solid State
Physics Score: 0
Accepted Answers:
Week 3 : Density The base width must be designed to be much smaller than the minority carrier diffusion length
of States, Fermi
Function and 2) Which of the following represents the Base Transport Factor for a pnp-BJT ? 1 point
Doping
Week 4 : 𝐼 𝑝𝐶
Recombination- 𝐼 𝑝𝐸
Generation,
Charge 𝐼 𝑛𝐶
Transport and 𝐼 𝑛𝐸
Continuity
Equation 𝐼 𝑝𝐸
𝐼 𝑛𝐸 +𝐼 𝑝𝐸
Week 5 : Metal-
Semiconductor 𝐼𝐶
Junctions 𝐼𝐸

Week 6 : PN
Junction Score: 0
Accepted Answers:
Week 7 : Bipolar 𝐼 𝑝𝐶
Junction 𝐼 𝑝𝐸
Transistors
3) The parameters for the base region in an npn BJT are given by: 1 point
. The base width is 1 micron. Determine the
4 −4
Bipolar Junction
2 −3 2
𝐷𝑛 = 20𝑐𝑚 /𝑠, 𝑛𝐵0 = 10 𝑐𝑚 , 𝐴 𝐵𝐸 = 10 𝑐𝑚
Transistors value of collector current when the base-emitter voltage is 0.6 V and when the collector-base junction is
(BJT)
reverse biased. Assume thermal voltage is 26 mV.
BJT: IV
Characteristics 7.5 uA
0.33 mA
BJT: Non-
idealities and 17 mA
Equivalent 82 uA
Circuit Modeling
Quiz : No, the answer is incorrect.

Assignment 7 Score: 0
Assignment 7: Accepted Answers:

Solution 0.33 mA
Week 8 : Metal 4) To bias a BJT in the saturation mode, Base-Emitter Junction is _______ biased and 1 point
Oxide Collector-Base junction is _______ biased.
Semiconductor
Capacitor reverse, reverse
(MOSCAP) and Faceb
reverse, forward
CV
Characteristics forward, reverse
Twitte
forward, forward
Week 9:
MOSFET: I No, the answer is incorrect. Youtu
Score: 0
Week 10: Accepted Answers:
MOSFET: II Linked
forward, forward
Week 11: Circuits 5) Consider that the base transport factor in BJT is given by: 1
, where 𝑥𝐵 is the 1 point
𝛼𝑇 = 𝑥
𝐵
Googl
plus
𝑐𝑜𝑠ℎ( )
𝐿
𝐵
Week 12: Thin base-width and 𝐿 𝐵 is the minority carrier diffusion length in base. Find out the base-width needed in a
Film Transistors pnp BJT to achieve a base transport factor of 𝛼 𝑇 = 0.9967. Assume diffusion coefficient is
(TFTs), Tutorial
and minority carrier lifetime in base is 10
2 −7
10𝑐𝑚 /𝑠 𝑠
Sessions
0.81 um
2.35 um
0.2 um
None of the above

Score: 0
Accepted Answers:
0.81 um
6) In a BJT biased in the active mode, the base current is 6 𝜇A, and the collector current is 510 1 point
𝜇A. Find the value of 𝛼 .
0.5
0.92
0.988
0.965

Score: 0
Accepted Answers:
0.988
7) Which of the following in the BJT is the heavily doped region ? 1 point
Emitter
Base
Collector
All the regions are equally doped

Score: 0
Accepted Answers:
Emitter
8) Base-width modulation in a BJT results in: 1 point
an increase in output conductance of the device

a decrease in output conductance of the device
no change in output conductance
none of the above

Score: 0
Accepted Answers:
an increase in output conductance of the device
9) A BJT is generally biased in _______ mode of operation in analog amplifier circuits. 1 point
saturation Faceb
cut-off
inverse-active Twitte
active

Youtu
Score: 0
Accepted Answers: Linked
active
10)Early voltage represents the voltage at which: Googl

1 point
plus
break-down occurs at the junctions.
saturation of collector current begins.
curves on collector-current characteristics intersect the voltage axis, when extrapolated to zero
collector current value.
none of the above

Score: 0
Accepted Answers:
curves on collector-current characteristics intersect the voltage axis, when extrapolated to zero collector
current value.
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1/22/2020 Semiconductor Devices and Circuits - - Unit 9 - Week 8 : Metal Oxide Semiconductor Capacitor (MOSCAP) and CV Charact…

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Unit 9 - Week 8 :
Metal Oxide Semiconductor Capacitor (MOSCAP) and Youtu
CV Characteristics Linked
Googl
Course
outline Assignment 8 plus
the portal
1) An ideal N-MOS capacitor is subjected to a C-V measurement with a very fast DC sweep 1 point
Week 1 : and a high frequency small signal. Which of the following C-V characteristics will it exhibit ?
Excursion in
Quantum
Mechanics
i
Week 2 : ii
Excursion in
Solid State iii
Physics None of the above
Week 3 : Density No, the answer is incorrect.

of States, Fermi Score: 0
Function and
Accepted Answers:
Doping
iii
Week 4 : 2) Consider a MOS-capacitor with a p-type silicon substrate doped to /𝑐𝑐 . The 1 point
16
𝑁𝐴 = 3𝑋10
Recombination-
work function difference is Φms = - 1.13 V. Assume 𝑛𝑖 = 1.5𝑋10 /𝑐𝑐. Determine the oxide thickness
10
Generation,
Charge such that the threshold voltage is 0.65 V. Assume that the thermal voltage is 25.9 mV.
Transport and
Continuity
Equation 522 nm
41 nm
Week 5 : Metal-
Semiconductor 872 nm
Junctions 311 nm
Week 6 : PN No, the answer is incorrect.

Junction Score: 0
Accepted Answers:
Week 7 : Bipolar 41 nm
Junction
Transistors 3) A MOS capacitor is biased such that the majority carriers pile up at the oxide-semiconductor 1 point
interface. Which mode is the MOS capacitor operating ?
Week 8 : Metal
Oxide strong inversion
Semiconductor
weak inversion
Capacitor
(MOSCAP) and depletion
CV accumulation
Characteristics
Metal Oxide Score: 0
Semiconductor
Capacitor Accepted Answers:
(MOSCAP) accumulation
MOSCAP -
4) Consider a MOS-capacitor with p-type silicon substrate at T = 300K doped to 1 point
Continued
/𝑐𝑐 . The oxide is silicon dioxide with a thickness of 55 nm. The area of the device is
16
𝑁𝐴 = 1𝑋10
MOSCAP: C-V
. Assume thermal voltage is 25.9 mV and 𝑛𝑖 /𝑐𝑐. Calculate the value of
−3 2 10
2𝑋10 𝑐𝑚 = 1.5𝑋10
Characteristics
total oxide capacitance of the device in picofarads.
MOSCAP: C-V
Characteristics - 126 pF
Continued
Faceb
62.8 pF
Quiz : 628 pF
Assignment 8 Twitte
12.6 pF
Assignment 8:
Solution No, the answer is incorrect. Youtu
Score: 0
MOSFET: I Linked
126 pF
Week 10: 5) For the MOS-capacitor given in question (4), calculate the value of maximum depletion width 1 point
Googl
MOSFET: II 𝑥𝑑 . plus
Week 11: Circuits

27 𝜇m
Week 12: Thin
Film Transistors
9 𝜇m
(TFTs), Tutorial
Sessions
3 𝜇m
0.3 𝜇m

Score: 0
Accepted Answers:
0.3 𝜇m
6) For the MOS-capacitor given in question (4), calculate the value of effective capacitance 1 point
𝐶𝑒𝑓 𝑓 (unit-area capacitance) corresponding to when maximum depletion width is achieved.
−10 2
7.24𝑋10 𝐹 /𝑐𝑚
−8 2
2.23𝑋10 𝐹 /𝑐𝑚
−9 2
6.56𝑋10 𝐹 /𝑐𝑚
None of the above

Score: 0
Accepted Answers:
−8 2
2.23𝑋10 𝐹 /𝑐𝑚
7) For a MOS-capacitor biased in accumulation mode, the effective capacitance is: 1 point
𝐶 𝑜𝑥
𝐶𝑜𝑥 + 𝐶𝑑𝑒𝑝
𝐶 𝑜𝑥 ∗𝐶 𝑑𝑒𝑝
𝐶 𝑜𝑥 +𝐶 𝑑𝑒𝑝
𝐶𝑜𝑥
Score: 0
Accepted Answers:
𝐶𝑜𝑥
8) Consider the following statements: 1 point
For a MOS capacitor with gate voltage equal to the threshold voltage,
Faceb
i. The surface potential is equal to twice the value of 𝜙𝐹
ii. There is no band-bending in the semiconductor
iii.The inversion charge concentration at the interface matches the majority carrier concentration in theTwitte
bulk
iv. The surface potential is equal to 𝜙𝐹 Youtu
Which of the above statements are false?

Linked
iv only
iii and iv Googl
ii and iv plus
i only

Score: 0
Accepted Answers:
ii and iv
9) For a MOS-capacitor under strong inversion, the surface charge density: 1 point
decreases exponentially as a function of surface potential

increases exponentially as a function of surface potential
increases linearly as a function of surface potential
does not change with surface potential

Score: 0
Accepted Answers:
increases exponentially as a function of surface potential
10)Consider a MOS capacitor with p-type silicon substrate at T=300K doped to 1 point
/𝑐𝑐 .The oxide is silicon dioxide with a thickness of 50nm. Let 𝜙𝑀 𝑆 .
14
𝑁𝐴 = 1𝑋10 = −0.83𝑉
Assume 𝑛𝑖 and thermal voltage is 25.9mV. Calculate the threshold voltage of the MOS
10
= 1.5𝑋10 /𝑐𝑐
capacitor.
- 0.32 V
0.8 V
- 0.77 V
- 0.13 V

Score: 0
Accepted Answers:
- 0.32 V
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1/22/2020 Semiconductor Devices and Circuits - - Unit 10 - Week 9: MOSFET: I

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Unit 10 - Week 9:
MOSFET: I Youtu
Linked
Course
plus
the portal
1) Consider a n-channel MOSFET with W = 15 um, L = 2 um, and Cox = 69 nF/cmsq. Assume 1 point
Week 1 : that, in the non-saturation regime with 𝑉𝐷𝑆 = 0.1𝑉 , the drain current is 35 uA for a gate-to-source
Excursion in voltage of 1.5 V, and 75 uA for a gate-to-source voltage of 2.5 V. Compute the threshold voltage of the
Quantum MOSFET from the given data. (Use small- 𝑉𝐷𝑆 approximation in the drain current equation)
Mechanics
Week 2 :
Excursion in 0.3 V
Solid State
Physics 0.1 V
0.935 V
Week 3 : Density 0.625 V
of States, Fermi
Function and No, the answer is incorrect.
Doping Score: 0
Accepted Answers:
Week 4 :
Recombination- 0.625 V
Generation,
Charge 2) The parameters of a p-channel MOSFET are as follows: Mobility of holes = 310 cmsq/Vs , 1 point
Transport and oxide thickness = 22 nm, W/L = 60, and threshold voltage is -0.4 V. If the transistor is biased in
Continuity saturation region, find the ratio of drain currents
𝐼 𝐷1
corresponding to
Equation 𝐼 𝐷2
𝑉𝑆𝐺 = 1𝑉 and 𝑉𝑆𝐺 = 2𝑉
Week 5 : Metal-
Semiconductor
Junctions 2.53
0.14
Week 6 : PN 0.85
Junction
0.44
Week 7 : Bipolar No, the answer is incorrect.

Junction Score: 0
Transistors
Accepted Answers:
Week 8 : Metal 0.14
Oxide
Semiconductor 3) A silicon n-MOSFET has W = 10 um and L = 1 um. The oxide thickness is 20 nm and the 1 point
Capacitor threshold voltage is 1V. The device is biased with a gate-to-source voltage of 3V and a drain-to-source
(MOSCAP) and voltage of 5V. Assume that the mobility is 300 cmsq/Vs. The MOSFET is biased in which region of
CV operation ?
Characteristics
Linear
Week 9: Sub-threshold
MOSFET: I
Saturation
MOSFET: None of the above

Introduction
MOSFET: I-V Score: 0
Characteristics
Accepted Answers:
MOSFET: I-V Saturation
Characteristics -
Contd. 4) For the n-MOSFET given in question (3), calculate the value of transconductance. 1 point
MOSFET: I-V Faceb
4.14 mS
Characteristics -
Contd. 1.035 mS
2.07 mS Twitte
Subthreshold
Swing,
Additional 8.28 mS Youtu
Concepts
Quiz :
Assignment 9
No, the answer is incorrect. Linked
Score: 0
Assignment 9:
Accepted Answers: Googl
Solution
1.035 mS plus
Week 10:
5) Consider an ideal n-channel MOSFET with channel length 1.25 um. The mobility of 1 point
MOSFET: II
electrons is 650𝑐𝑚 /𝑉 𝑠 and the threshold voltage is 0.65 V. Design the channel width of the MOSFET
2
Week 11: Circuits such that the saturation drain current is 4 mA for an applied gate-to-source voltage of 5 V. Take oxide
capacitance to be 69 nF/cmsq.
Week 12: Thin
Film Transistors 11.8 um
(TFTs), Tutorial 65.8 um
Sessions
125 um
40 um

Score: 0
Accepted Answers:
11.8 um
6) The threshold voltage for a MOSFET at 300K is 350 mV with a reduction of 1mV/K. Assume0 points
that the mobility changes with temperature (in K) as : 𝜇(𝑇 ) = 𝜇(300𝐾 ) ∗ (300𝐾 /𝑇 )2 Assuming
perfect velocity saturation, the gate voltage, at which the saturation currents at 300K and 400K are
equal, is ________. (Make an assumption that the saturation velocity remains independent of
temperature).
200 mV
695 mV
478 mV
312 mV

Score: 0
Accepted Answers:
478 mV
7) Consider a MOS structure with a p-type semiconductor substrate doped to 1 point

𝑁𝐴 = 10
16
𝑐𝑚
−3
, with thickness of SiO2 insulator as 50 nm. Let the equivalent oxide surface charge
density be 16 nC/cmsq. The metal-semiconductor work-function difference is - 0.8 V. Calculate the value
of flat-band voltage.
- 1.03 V
- 1.43 V
- 0.8 V
1.43 V

Score: 0
Accepted Answers:
- 1.03 V
8) For a MOSFET in the sub-threshold region of operation, the log-𝐼𝐷𝑆 vs 𝑉𝐺𝑆 plot is a/an: 1 point
Quadratic curve
Exponential curve
Straight line
None of the above Faceb
Score: 0 Twitte
Accepted Answers:
Straight line Youtu
9) Which of the following statements is/are true with regards to Channel Length Modulation in a 1 point
MOSFET device ? Linked
i. It is similar to Base width modulation in BJTs

ii. The pinch-off point relocates with respect to applied drain voltage Googl
plus
iii. Drain voltage influences the current-voltage charcteristics of a MOSFET in saturation
i
iii
i and ii
i, ii and iii

Score: 0
Accepted Answers:
i, ii and iii
10)The subthreshold swing of an enhancement mode MOSFET: 0 points
increases as the depletion capacitance per unit area decreases

increases as the depletion capacitance per unit area increases
is typically lesser than 59mV/dec at 300K
is typically greater than 59mV/dec at 300K

Score: 0
Accepted Answers:
is typically greater than 59mV/dec at 300K
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1/22/2020 Semiconductor Devices and Circuits - - Unit 11 - Week 10: MOSFET: II

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Twitte
Unit 11 - Week 10:
MOSFET: II Youtu
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Course
plus
the portal
1) Assume that the subthreshold current of a MOSFET (in amperes) is given by: 1 point
Week 1 : 𝐼𝐷 = 10
−15
exp(𝑉𝐺𝑆 / 2.1 *𝑉𝑡 )
Excursion in over the range 0 < 𝑉𝐺𝑆 < 1V and where the factor 2.1 takes into account the effect of interface states.
Quantum
Assume that the value of thermal voltage 𝑉𝑡 is 25.9 mV. Assume that 10 identical transistors on a chip
6
Mechanics
are all biased at the same 𝑉𝐺𝑆 and at VDD = 5V.
Week 2 :
Excursion in Calculate the ratio of subthreshold current in the MOSFET device at 𝑉𝐺𝑆 = 0.7𝑉 to the subthreshold
Solid State current at
Physics 𝑉𝐺𝑆 = 0.5𝑉
Week 3 : Density 100

of States, Fermi
82.5
Function and
Doping 39.5
1
Week 4 :
Recombination- No, the answer is incorrect.
Generation, Score: 0
Charge
Transport and Accepted Answers:
Continuity 39.5
Equation
2) With reference to details given in question-1, calculate the total current that must be supplied 1 point
to the chip at 𝑉𝐺𝑆 = 0.7𝑉
Week 5 : Metal-
Semiconductor
Junctions
0.388 mA
Week 6 : PN 9.83 mA
Junction 0.678 mA
9.83 pA
Week 7 : Bipolar
Junction No, the answer is incorrect.
Transistors Score: 0
Week 8 : Metal Accepted Answers:

Oxide 0.388 mA
Semiconductor
Capacitor 3) With reference to details given in question-1, calculate the total power dissipated in the chip 1 point
(MOSCAP) and at 𝑉𝐺𝑆 = 0.9𝑉
CV
Characteristics 1.94 mW
49,2 mW
Week 9: 22.8 mW
MOSFET: I
77 mW
Week 10:
MOSFET: II Score: 0
Accepted Answers:
Trapped 77 mW
charge, Body-
bias 4) A silicon MOS device has the following parameters: 16 −
1 point
𝑁𝐴 = 10 𝑐𝑚 3
Scaling of Oxide thickness = 20 nm. Calculate the body-effect coefficient for the device.
MOSFETs
Scaling of
Faceb
MOSFETs - 0.5
Continued, 3.33𝑉
Twitte
Leakage current
in MOSFETs 0.5
0.333𝑉
MOSFET Youtu
Characterization: 0.5
0.03𝑉
Parameter
Extraction Linked
0.5
33.33𝑉
MOSFET
Characterization: Googl
Trapped plus
charges,
Score: 0
Contact Accepted Answers:
resistance 0.5
0.333𝑉
Quiz :
Assignment 10
5) For the MOS device given in question-4, calculate the change in threshold voltage for 1 point
. Assume thermal voltage is 25.9 mV and 𝑛𝑖
10 −3
𝑉𝑆𝐵 = 1𝑉 = 1.5𝑥10 𝑐𝑚
Assignment 10:
Solutions 0.16 V
Week 11: Circuits 0.33 V

1V
Week 12: Thin None of the above
Film Transistors
(TFTs), Tutorial No, the answer is incorrect.
Sessions Score: 0
Accepted Answers:
0.16 V
6) Consider an n-channel MOSFET with channel width 30 um and channel length 1 um. The 1 point
oxide capacitance is 69 nF/sqcm. Assume that the drain current in the non-saturation region for
𝑉𝐷𝑆 = 0.07𝑉 is 25 uA at 𝑉𝐺𝑆 = 1.5𝑉 , and 65 uA at 𝑉𝐺𝑆 = 2.5𝑉 . Extract the mobility (in
sqcm/Vs) from the given data (Assume small-𝑉𝐷𝑆 approximation for the drain current equation).
552
138
276
None of the above

Score: 0
Accepted Answers:
276
7) Which of the following statements are true ? 1 point
i. The interface states affect the subthreshold-swing of a MOSFET due to presence of additional
capacitances
ii. The C-V characteristics curve of a MOS-system shifts to left/right based on the presence of trap
charges in the oxide
iii. Presence of trap-charges has no effect on the C-V characteristics of a MOS-system
iv. Charges present at the oxide-semiconductor interface has strong effects on threshold voltage value.
i only
ii and iii
ii only
i, ii and iv

Score: 0 Faceb
Accepted Answers:
i, ii and iv Twitte
8) Constant voltage scaling is applied to a MOSFET with a scaling factor of k=5. As the Youtu
1 point
MOSFET features are scaled down, the current in the MOSFET:
Linked
increases by a factor of 5
decreases by a factor of 5
increases by a factor of 25 Googl
plus
decreases by a factor of 25

Score: 0
Accepted Answers:
increases by a factor of 5
9) An n-MOS transistor has the following parameters: Channel length = 1 um, Channel width = 1 point
10 um, Oxide thickness = 25 nm, 𝑁𝐴 = 5𝑥10 𝑐𝑚 −3 , applied voltages = 3V. If the device is to be
15
scaled using constant-field scaling with a scaling factor of k = 0.7, the channel length and channel width
for the scaled device would be:
7 um, 0.7 um
7 um, 7 um
0.7 um, 7 um
0.7 um, 0.7 um

Score: 0
Accepted Answers:
0.7 um, 7 um
10)Find the oxide thickness for the scaled device given in question-9. 1 point
17.5 nm
25 nm
35.7 nm
None of the above

Score: 0
Accepted Answers:
17.5 nm
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1/22/2020 Semiconductor Devices and Circuits - - Unit 12 - Week 11: Circuits

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Twitte
Unit 12 - Week 11:
Circuits Youtu
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Course
plus
the portal
1) Consider the MOSFET circuit shown in the following figure. The threshold voltage of the 1 point
Week 1 : MOSFET varies as:
Excursion in
Quantum
𝑉𝑇 = 0.5 + 𝛾[√‾
2‾‾‾‾‾‾‾‾
𝜙𝐹 + 𝑉𝑆𝐵‾ − √‾
2𝜙
‾‾𝐹
‾]
Mechanics
Week 2 : where, the body-effect coefficient 𝛾 is 0.2𝑉 1/2
Excursion in
Solid State Assume 𝑉𝐷𝐷 = 3𝑉 , 𝑅1 = 10𝑘Ω, 𝑅2 = 2𝑘Ω The aspect ratio of the device is 10. The MOSFET
Physics
device is in saturation. Assume 𝜇𝐶𝑜𝑥 = 0.8𝑚𝐴/𝑉
2
, 𝜙𝐹 = 0.15𝑉
Week 3 : Density
of States, Fermi The channel length modulation parameter for the device is 𝜆 = 0.1𝑉
−1
. Calculate the value of
Function and 𝑉𝐼 𝑁 such that the DC voltage at the output, 𝑉𝑂𝑈 𝑇 , is 1.5 V.
Doping
Week 4 :
Recombination-
Generation, 0.6 V
Charge
Transport and 1.03 V
Continuity 1.82 V
Equation
None of the above
Week 5 : Metal- No, the answer is incorrect.

Semiconductor Score: 0
Junctions
Accepted Answers:
Week 6 : PN 1.03 V
Junction
2) Calculate the approximate value of output resistance (𝑟 𝑑𝑠 ) of the MOSFET in question-1. 1 point
Week 7 : Bipolar
Junction 13.4𝑘Ω
Transistors
Week 8 : Metal 670𝑘Ω
Oxide
Semiconductor 75𝑘Ω
Capacitor
(MOSCAP) and None of the above
CV
Characteristics
Score: 0
MOSFET: I 75𝑘Ω
3) In a MOSFET used as a switch, which of the following represents the ON-resistance of the 1 point
Week 10:
MOSFET: II MOSFET when 𝑉𝐷𝑆 << 𝑉𝐺𝑆 − 𝑉 𝑡ℎ
Week 11: Circuits

𝜇𝐶𝑜𝑥 𝑊 /𝐿
MOSFET as a
Switch 𝜇𝐶𝑜𝑥 𝑊 /𝐿(𝑉𝐺𝑆 − 𝑉 𝑡ℎ)
MOSFET as a
Switch - 1
Faceb
Continued
𝜇𝐶 𝑜𝑥 𝑊 /𝐿(𝑉 𝐺𝑆 −𝑉 𝑡ℎ)
Amplifiers using ∞ Twitte

MOSFET
Amplifiers using
Score: 0 Youtu
MOSFET -
Continued Accepted Answers:
Circuits:
1
Linked
𝜇𝐶 𝑜𝑥 𝑊 /𝐿(𝑉 𝐺𝑆 −𝑉 𝑡ℎ)
Frequency
Response, 4) In the voltage amplifier circuit shown in the following figure, 𝑉𝐵𝐼 𝐴𝑆 , 𝑉𝐷𝐷 are the DC 1 point
Googl
Noise voltages aiding the biasing of the MOSFET. 𝑅𝐿 is the load resistance. Let 𝑔𝑚 be the transconductanceplus
Quiz : and 𝑟 𝑑𝑠 be the output resistance of the MOSFET device. 𝑣𝑖 and 𝑣𝑜 are the small signal input and
Assignment 11 output voltages respectively. Which of the following expressions represents the effective Input
Impedance (𝑍 𝑖𝑛 ) seen by the small-signal at the input ?
Assignment 11:
Solutions
Week 12: Thin

Film Transistors
(TFTs), Tutorial 𝑅𝐿
Sessions
(𝑅𝐿 + 𝑟 𝑑𝑠 )𝑔𝑚 𝑅𝐿
𝑅 𝐿 +𝑟 𝑑𝑠
1+𝑔 𝑟 𝑑𝑠
𝑚

Score: 0
Accepted Answers:
𝑅 𝐿 +𝑟 𝑑𝑠
1+𝑔 𝑟 𝑑𝑠
𝑚
5) For the circuit shown in the following figure, calculate the value of small-signal voltage gain, 1 point
ignoring short-channel effects in the transistors, when (𝑊 /𝐿)1 = 50/0.5 and (𝑊 /𝐿)2 = 10/0.5 .
𝐼𝐷1 = 𝐼𝐷2 = 0.5𝑚𝐴
-2.24
-7.07
-1
-5

Score: 0
Accepted Answers:
-2.24
6) When used in an amplifier circuit, a MOSFET is generally biased in ________ mode of 1 point
operation.
Linear
Saturation
Sub-threshold
None
Score: 0
Accepted Answers:
Saturation
7) Let 𝑔𝑚 be the transconductance and 𝑟 𝑑𝑠 be the output resistance of the MOSFET shown in 1 point
the following circuit. Which of the following expressions represents the correct small-signal voltage gain
of the circuit ?
Faceb
Twitte
𝑅𝐷
Youtu
𝑅𝐹
Linked
1
𝑅
𝐹
1 1 1
𝑅
𝐹
+
𝑅
𝐷
+
𝑟
𝑑𝑠 Googl
plus
1
𝑔 −
𝑚 𝑅
𝐹
−
1 1 1
+ +
𝑅 𝑅 𝑟
𝐹 𝐷 𝑑𝑠
𝑅𝐹
−
𝑅𝐷

Score: 0
Accepted Answers:
1
𝑔 −
𝑚 𝑅
𝐹
−
1 1 1
+ +
𝑅 𝑅 𝑟
𝐹 𝐷 𝑑𝑠
8) Consider the circuit shown in following figure with transistors named 𝑄1 and 𝑄2 . Channel 1 point
lengths of the devices are 𝐿 1 = 1𝜇𝑚, 𝐿 2 = 1𝜇𝑚. The threshold voltage is 1V for both the devices.
Take 𝜇𝐶𝑜𝑥 = 120𝜇𝐴/𝑉
2
. Assuming that there is no channel length modulation effect present in the
𝑊1
devices, calculate the ratio of the widths of the devices:
𝑊2
0.25
1
4
None of the above

Score: 0
Accepted Answers:
4
9) In the circuit shown in the following figure, the threshold voltage of the MOSFET M is 0.5 V. 1 point
When 𝑉𝐼 𝑁 = 1𝑉 , the DC voltage at the output is 𝑉𝑂𝑈 𝑇 = 1.5𝑉 . Take
𝜇𝐶𝑜𝑥 = 0.1𝑚𝐴/𝑉
2
. Assume that the channel length modulation parameter for the MOSFET is
𝜆 = 0.09𝑉
−1
. What is the value of current through the MOSFET device ?
Faceb
Twitte
Youtu
Linked
0.1 mA
0.5 mA Googl
0.25 mA
plus
0.7 mA

Score: 0
Accepted Answers:
0.1 mA
10)With respect to details given in question-9, find the aspect ratio W/L of the MOSFET device. 1 point
22
1
7
None of the above

Score: 0
Accepted Answers:
7
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1/22/2020 Semiconductor Devices and Circuits - - Unit 13 - Week 12: Thin Film Transistors (TFTs), Tutorial Sessions

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Twitte
Unit 13 - Week 12:
Thin Film Transistors (TFTs), Tutorial Sessions Youtu
Linked
Course
plus
the portal
1) Assume an n-type bulk non-crystalline semiconductor, in which, on an average an electron 1 point
Week 1 : spends 10 % time in the conduction band, where it is free to move and rest of the time in the trapped
Excursion in states. The drift mobility of the electron is 2 𝑐𝑚 2 /𝑉 . 𝑠. What is the conduction-band mobility (i.e. free
Quantum
Mechanics carrier mobility) in 𝑐𝑚 2 /𝑉 . 𝑠 of the electron in that material?
0.2
Week 2 :
Excursion in 2
Solid State 20
Physics
200
Week 3 : Density No, the answer is incorrect.

of States, Fermi Score: 0
Function and
Doping Accepted Answers:
20
Week 4 :
2) Assume an n-type thin-film transistor, in which the trapped electron concentration is much 1 point
Recombination-
Generation, higher than the free electron concentration in the above-threshold operating regime. The electrostatics
Charge (Poisson's equation) is dominated by the ________ and the drift transport under drain bias is dictated by
Transport and the ________. (Fill in the gaps)
Continuity
Equation trapped electrons, trapped electrons
trapped electrons, free electrons
Week 5 : Metal-
Semiconductor free electrons, trapped electrons
Junctions free electrons, free electrons
Week 6 : PN No, the answer is incorrect.

Junction Score: 0
Accepted Answers:
Week 7 : Bipolar trapped electrons, free electrons
Junction
Transistors 3) Which of the following represents Continuity equation in words? 1 point
Week 8 : Metal Rate of increase = (inflow - outflow) + drift - diffusion

Oxide Rate of increase = (outflow + inflow) + generation - recombination
Semiconductor
Capacitor Rate of increase = (outflow - inflow) - diffusion + drift
(MOSCAP) and Rate of increase = (inflow - outflow) + generation - recombination
CV
Characteristics No, the answer is incorrect.
Score: 0
MOSFET: I
Rate of increase = (inflow - outflow) + generation - recombination
4) Assume an undoped GaAs sample with the following properties of electrons: 1 point
Week 10:
Mobility, 𝜇𝑛 𝑐𝑚 /𝑉 . 𝑠.
3 2
MOSFET: II = 8.8 × 10
Effective mass, 𝑚 ∗𝑛 = 0.067𝑚 0 , where, 𝑚 0 𝑘𝑔 .

−31
= 9.1 × 10
Week 11: Circuits Average velocity, 𝑣𝑎𝑣𝑔 = 10

7
𝑐𝑚/𝑠.
Calculate the mean free path of the electron.

Week 12: Thin
Film Transistors
(TFTs), Tutorial 33.5 nm
Sessions Faceb
96.7 nm
Introduction: 134.8 nm
Amorphous Twitte
0.56 um
Semiconductors
Thin Film
Score: 0 Youtu
Transistors
Tutorial Session
Accepted Answers:
-1 33.5 nm Linked
Tutorial Session 5) Which of the following statements is NOT true about the reverse bias breakdown due to 1 point
-2 impact ionization and Zener tunneling? Googl
plus
Tutorial Session
Zener tunneling breakdown generally occurs at lower voltages than impact ionization.
-3
Zener tunneling generally has a stronger temperature dependence than impact ionization.
Quiz :
Significant Zener tunneling only occurs when the junction is heavily doped.
Assignment 12
All of the above.
Assignment 12:
Solution No, the answer is incorrect.
Score: 0
Accepted Answers:
Zener tunneling generally has a stronger temperature dependence than impact ionization.
6) For a pnp-BJT, which of the following expressions represents the Emitter Injection Efficiency 1 point
?
𝐼 𝑛𝐸
𝐼 𝑝𝐸 +𝐼 𝑛𝐸
𝐼 𝑝𝐸
𝐼 𝑝𝐶
𝐼 𝑝𝐸
𝐼 𝑝𝐸
𝐼 𝑝𝐶

Score: 0
Accepted Answers:
𝐼 𝑝𝐸
7) Which of the following is not a desired characteristic of a good voltage amplifier ? 1 point
High Input Impedance

High Output Impedance
High Voltage Gain
High Operating Bandwidth

Score: 0
Accepted Answers:
High Output Impedance
8) Which of the following conditions represents the pinch-off point for a MOSFET ? 1 point
𝑉𝐷𝑆 = 𝑉𝑇
𝑉𝐷𝑆 = 𝑉𝐺𝑆
𝑉𝐷𝑆 = 𝑉𝐺𝑆 + 𝑉𝑇
𝑉𝐷𝑆 = 𝑉𝐺𝑆 − 𝑉𝑇
Faceb
Score: 0 Twitte
Accepted Answers:
𝑉𝐷𝑆 = 𝑉𝐺𝑆 − 𝑉𝑇
Youtu
9) Which of the following statements is false ? 1 point
Linked
Googl
For a common-source amplifier with resistive load, voltage-gain can be made high by increasing the
channel width of the MOSFET used. plus
For a common-source amplifier with resistive load, voltage-gain can be made high by decreasing
the channel length of the MOSFET used.
For a BJT to be biased in active mode, Base-Emitter junction is forward biased and Base-Collector
Junction is reverse biased
A MOSFET used as a switch, is generally biased in saturation mode of operation

Score: 0
Accepted Answers:
A MOSFET used as a switch, is generally biased in saturation mode of operation
10)Which of the following statements are true ? 1 point
i. Presence of interface trap charges does not affect the subthreshold swing of a MOSFET device
ii. Channel length modulation has impact on the slope of output characteristics of a MOSFET
iii. Presence of gate-drain overlap gives rise to additional parasitic capacitance in a MOSFET device
iv. In the absence of channel length modulation effects, the saturation drain current in a MOSFET is
independent of the applied drain-to-source voltage
ii, iii
iii only
i, ii
ii, iii, iv

Score: 0
Accepted Answers:
ii, iii, iv
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1/22/2020 Semiconductor Devices and Circuits - - Unit 2 - Week 1 : Excursion in Quantum Mechanics

Courses » Semiconductor Devices and Circuits

Week 5 : Metal- −𝑖ℏ ∇⃗ . 𝑟 ⃗

Semiconductor Neglect the relativistic effect.

No, the answer is incorrect.

6) A wave function is given by 1 point

What is the value of A?

No, the answer is incorrect.

No, the answer is incorrect.

No, the answer is incorrect.

9) The wave-function of a particle at a state 'n' is given by 1 point

‾‾‾) 𝑐𝑜𝑠 (3𝜋𝑥/𝑎) , for |𝑥| ≤ 𝑎/2

What is the average momentum of the particle at the state 'n'.

None of the above.

No, the answer is incorrect.

No, the answer is incorrect.

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Courses » Semiconductor Devices and Circuits

Quiz : No, the answer is incorrect.

Assignment 2 Accepted Answers:

Characteristics None of the above Linked

Week 9: No, the answer is incorrect.

No, the answer is incorrect.

No, the answer is incorrect.

7) What is a Brillouin zone? 1 point

A region of position-space where the electrons can reside within.

8) Consider the following 1D band structure: 1 point

where, 𝑣𝐹 is a velocity. What is the effective mass?

Not defined Linked

No, the answer is incorrect.

No, the answer is incorrect.

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Courses » Semiconductor Devices and Circuits

Doping No, the answer is incorrect.

Week 12: Thin 3𝑛𝑖 /2

No, the answer is incorrect.

When effective mass of electrons = effective mass of holes.

No, the answer is incorrect.

No, the answer is incorrect.

3𝑘𝑇 above the valence band edge.

3𝑘𝑇 below the valence band edge.

2𝑘𝑇 above the conduction band edge.

2𝑘𝑇 below the conduction band edge.

No, the answer is incorrect.

No, the answer is incorrect.

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Courses » Semiconductor Devices and Circuits

Continuity Equation Linked

Characteristics Assume, intrinsic carrier concentration in Si = 10

Week 11: Circuits

Very close to the conduction-band.

No, the answer is incorrect.

Add the lifetimes of individual processes.

No, the answer is incorrect.

No, the answer is incorrect. Twitte

Assume the sample extends to infinity along the x-axis.

1.2 e10 /cc

No, the answer is incorrect.

1.2 e10 /cc

No, the answer is incorrect.