Assignments - NOC - Fundamentals - of - Semiconductor Devices

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Unit 1 - How to
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Certification exam Week 0 Assessment
The due date for submitting this assignment has passed.
Course As per our records you have not submitted this Due on 2019-02-04, 23:59 IST.
outline
assignment.
How to access 1) Silicon is the most widely used semiconductor and is almost in all electronic devices we see 1 point
the portal around us. Which of the following statements is false about silicon?
How to access
The processors in mobiles/computers use high-speed digital logic circuits which are made of
the home
page? silicon CMOS.
How to access Flash memory such as solid-state hard drives are made of silicon.
the course Silicon being an indirect band gap material, can not be used to make solar cells.
page?
The white LEDs which light our houses and streets, do not consist of silicon light emitters.
How to access
the MCQ, MSQ No, the answer is incorrect.
and Score: 0
Programming
assignments? Accepted Answers:
Silicon being an indirect band gap material, can not be used to make solar cells.
How to access
the subjective 2) Moore’s law predicts the future of _______________ 1 point
assignments?
Quiz : Week 0 Transistors

Assessment
Mobile phones
Basics of Resistors
semiconductor
physics
Capacitors
Equilibrium
carrier
concentration No, the answer is incorrect.
Score: 0
Carrier transport Accepted Answers:
Transistors
p-n junction
3) Which of the following statements is correct about metal? 1 point
Applications of
© 2014 NPTEL - Privacy & Terms - Honor Code - FAQs -
A project of In association with
Funded by
1 of 4 Wednesday 22 May 2019 10:16 AM

Transistor Score: 0 Powered by

Accepted Answers:
Metal Oxide
Metals can’t be doped extrinsically as p- or n-type.
Semiconductor
Capacitor 4) What is the typical thickness of a silicon wafer? 1 point
MOSFET 1 nm to 100 nm
Interaction 100 nm to 1 µm
session
1 µm to 100 µm
DOWNLOAD 100 µm to a few mm

VIDEO
No, the answer is incorrect.
Score: 0
Text Transcripts
Accepted Answers:
Compound 100 µm to a few mm
Semiconductors
5) Which of the following are used as semiconductors? 1 point
Opto-electronic
devices: Solar Molybdenum disulphide (MoS2)
cells and photo-
Aluminium Oxide (Al2O3)
detectors
Indium Phosphide (InP)
Opto-electronic
devices: Light Silicon Carbide (SiC)
Emitting Diodes
(LED)
Score: 0
Applications of Accepted Answers:

transistors and Indium Phosphide (InP)
basics of Silicon Carbide (SiC)
microelectronic
fabrication 6) Silicon wafers are circular with diameters that typically range between 1 point
½ to 1 inch
1 to 2 inch
2 to 12 inch
16 to 48 inch

Score: 0
Accepted Answers:
2 to 12 inch
7) Which of the following semiconductor wafers would be completely transparent? The band 1 point
gap is mentioned beside each.
Silicon (1.1 eV)
Gallium Nitride, GaN (3.4 eV)
Gallium Arsenide, GaAs (1.42 eV)
Germanium (0.68 eV)

Score: 0
Accepted Answers:
Gallium Nitride, GaN (3.4 eV)
8) Which of the following statements is correct? 1 point
Junction formed between two different semiconductor materials is called p-n junction

A diode can be either Schottky diode or a p-n junction diode
A silicon p-n junction cannot act like a solar cell
A silicon p-n junction can have a turn-on voltage of 2 V

Score: 0
Accepted Answers:
A diode can be either Schottky diode or a p-n junction diode
9) The maximum efficiency a silicon solar cell can have, theoretically, is 1 point
Less than 10%
Less than 20%
Close to 50%
Slightly above 30%

Score: 0
Accepted Answers:
Slightly above 30%
10)Mid-infrared (mid-IR) consists of wavelengths between 2 to 5 µm, and detectors which work 1 point
in mid-IR, have enormous applications in the airport & tactical security, skin cancer detection, etc.
Silicon is not used to make such mid-IR detectors because
Silicon is so widely used in making computer processors and other electronic devices that it
will be a waste of silicon to use it to make mid-IR detectors
Silicon cannot absorb mid-IR, hence can’t work in mid-IR
Silicon mid-IR detectors do not perform as well as those made from some other
semiconductors.
Silicon emits mid-IR wavelengths, so if silicon is used, it will lead to signal interference.

Score: 0
Accepted Answers:
Silicon cannot absorb mid-IR, hence can’t work in mid-IR
Previous Page End


Unit 2 - Basics of
semiconductor physics
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Certification exam Week 1 Assignment
Course Due on 2019-02-13, 23:59 IST.
outline Assignment submitted on 2019-02-08, 13:40 IST
How to access 1) 1) Lattice constant of a material depends on 1 point

the portal
Temperature
Basics of Strain
semiconductor
physics Both of these
Introduction to None of these

semiconductors
Introduction to Score: 0
energy bands
Accepted Answers:
Fundamentals Both of these
of band
structure 2) The relation between energy and wave vector in the reciprocal space for free electron is 1 point
________ and the movement of electron in periodic potential is dependent on_______
Band structure
(contd.) and
Fermi-Dirac Parabolic, effective mass
distribution
Hyperbolic, effective mass
Density of
Parabolic, real mass
states
Hyperbolic, real mass
Quiz : Week 1
Assignment No, the answer is incorrect.
Week 1 Score: 0
Assignment Accepted Answers:
solution Parabolic, effective mass
Equilibrium 3) Electron energy is _____ and the magnitude of electron momentum is _______ at the k = 0 1 point
carrier point in the conduction band
concentration
Minimum and minimum

Carrier transport
Maximum and minimum
Funded by

junction Accepted Answers:

Powered by
Minimum and minimum
Bipolar Junction
Transistor 4) The E-k diagram of the conduction band of a material A is sharper or narrower than the E-k 1 point
diagram for another material B. The relation between effective masses of material A and that of
Metal Oxide material B
Semiconductor
Capacitor Effective mass of A > B
MOSFET Effective mass of A < B
Effective mass of A = B
Interaction
session Needs additional information to conclude the result
DOWNLOAD
VIDEO
Score: 0
Text Transcripts Accepted Answers:

Effective mass of A < B
Compound
Semiconductors 5) Effective mass of electrons in a material depends on 1 point
Opto-electronic Orientation of crystal

devices: Solar Strain in the crystal
cells and photo-
detectors Both of these
None of these
Opto-electronic
devices: Light
Emitting Diodes
(LED)
Score: 0

transistors and Both of these
basics of
microelectronic 6) Determine the probability that an energy level is empty of an electron if the state is 1 point
fabrication below the Fermi level by 3kT?
4.7 x 10 ^-2
4.7 x 10^ -5
4.7 x 10 ^5
4.7 x 10^ 2

Score: 0
Accepted Answers:
4.7 x 10 ^-2
7) Calculate the temperature at which the probability is 10^-6 that an energy state 1 point
0.9 eV above the Fermi energy level is occupied by an electron. (Use, k =8.6E-5 eV/K)
757 K
471 K
581 K
601 K

Score: 0
Accepted Answers:

757 K
8) Silicon is an indirect band gap semiconductor material and GaN a direct semiconductor 1 point
material. Which one of them is transparent at 300K?
Si
GaN
All of the above
None of the above

Score: 0
Accepted Answers:
GaN
9) Determine the probability that an energy level is filled of an electron if the state is 1 point
above the Fermi level by 2kT?
11 x 10 ^-2
55 x 10^ -5
22 x 10^ -6
33 x 10 ^-4

Score: 0
Accepted Answers:
11 x 10 ^-2
10)Which of the following statements is true in case of an LED? 1 point
Silicon can be used to make an LED, as their band gap is low (1.1 eV)
GaN cannot be used to make LED as its band gap is high (3.4 eV)
LEDs cannot be made of any semiconductor
Only direct band gap semiconductors can be used to make LEDs

Score: 0
Accepted Answers:
Only direct band gap semiconductors can be used to make LEDs
Previous Page End


Unit 3 - Equilibrium
carrier concentration
Register for
Certification exam Week 2 - assignment
outline
assignment.
How to access 1) Calculate the electron concentration in Silicon at T = 300K. Given that Fermi energy is 1 point
the portal 0.25 eV below the conduction band. Assume that the system is in thermal equilibrium. ( Nc = 2.8 ×
10^19/ cm3, Nv = 1.04 × 10^19/ cm3, ni = 1.5 × 10^10/ cm3 ).
Basics of
semiconductor 1.8x10^15/cm3
physics
5x10^14/cm3
Equilibrium
8x10^16/cm3
carrier
concentration 1.0x10^17/cm3
Doping and No, the answer is incorrect.

intrinsic carrier Score: 0
concentration
Accepted Answers:
Equilibrium 1.8x10^15/cm3
carrier
concentration 2) Calculate the position of the intrinsic Fermi Level with respect to the middle of the band 1 point
gap in Silicon at T = 300 K. Assume that mn* = 1.08 mo and mp* = 0.56 mo.
Temperature
dependence of
carrier 10 meV below the mid energy
concentration
12.8 mev below the mid energy
High doping
10 meV above the mid energy
effects and
incomplete 15 meV above the mid energy
ionization
Quiz : Week 2 -
Score: 0
assignment
Accepted Answers:
Week 2
12.8 mev below the mid energy
assignment
solution 3) Calculate intrinsic Fermi level (EFi) in Silicon at T = 200 K, with respect to the middle of the 1 point
band gap.
Carrier transport

Funded by

semiconductor EFi - E midPowered

band energy
by = - 0.112 (kT)
junction
Bipolar Junction
Transistor No, the answer is incorrect.
Score: 0
Metal Oxide
Accepted Answers:
Semiconductor
Capacitor EFi - E mid band energy = - 0.495 (kT)
4) A semiconductor is doped with n-type dopant of 2X10^16/cm3 and p-type dopant of 1 point
MOSFET
10^16/cm3. The concentration of electrons in the semiconductor is approximately..? (assume ni =
10^16/cm3)
Interaction
session
1.62 X 10^16/cm3
DOWNLOAD 2 X 10^17/cm3
VIDEO
10^18 /cm3
Text Transcripts None of the above
Compound No, the answer is incorrect.

Semiconductors Score: 0
Accepted Answers:
Opto-electronic 1.62 X 10^16/cm3
devices: Solar
cells and photo- 5) If the concentration of electrons in a semiconductor material is equal to the conduction 1 point
detectors band density of states, then the location of Fermi-level above the conduction band at T= 300 K is
approximately (neglect band-gap narrowing) (assume k = 8.52X10^-5eV/K)
Opto-electronic
devices: Light
0 eV
Emitting Diodes
(LED) 9 meV
26 meV
Applications of
transistors and 50 meV
basics of
microelectronic No, the answer is incorrect.
fabrication Score: 0
Accepted Answers:
9 meV
6) If acceptor level in a semiconductor is above the Fermi level by 2kT, the fraction of ionized 1 point
acceptors is approximately.?
33%
58%
3%
90%

Score: 0
Accepted Answers:
3%
7) Consider a piece of silicon (X) doped with both donor and acceptor impurities as: 2 points
ND = 2 X 10^17/cm3 and NA = 10^17/cm3. Another piece of Silicon (Y) is doped with only donors ND =
10^17/cm3. Assume complete ionization of impurities. Which of the following statement is true.
Electron concentration in sample X > sample Y
Electron concentration in sample X < sample Y
Electron concentration in sample X is approximately equal to sample Y

Additional information is needed

Score: 0
Accepted Answers:
Electron concentration in sample X is approximately equal to sample Y
8) Two semiconductor materials have exactly the same properties except that material A has 2 points
a band gap energy of 1.0 eV and material B has a band gap energy of 1.2 eV. Determine the ratio of ni
of material A to that of material B at T = 300 K.
25.2
39.2
47.5
56.5

Score: 0
Accepted Answers:
47.5
Previous Page End

Unit 4 - Carrier
transport
Register for
Certification exam Week3_Assignment
outline
assignment.
How to access 1)As the electric field increases, the velocity of electrons travelling in the semiconductor 1 point
the portal increases. Which of the following statement is true when electron velocity is below the
saturation velocity?
Basics of Mobility of electrons increases with increase in electric field across

semiconductor
physics material
Mobility of electrons decreases with increase in electric field across
Equilibrium material
carrier
concentration Mobility of electrons remains same with electric field across material
Concept of mobility is not valid when electron travels with velocity below saturation velocity
Carrier transport
Carrier
Score: 0
scattering and
mobility Accepted Answers:
Mobility of electrons remains same with electric field across material
Low-field and
High-field
2) The E-k diagram for conduction band of material A is narrower or sharper than that of 1 point
transport,
material B. The relation between electron mobilities in material A and B is
Introduction to
Diffusion
Mobility of electrons in material A < material B
Drift-diffusion
and Trap Mobility of electrons in material A > material B
statistics
Mobility of electrons in material A = material B
Current
continuity
equation More information is needed
Continuity
equation No, the answer is incorrect.
(contd.) and Score: 0
Introduction to
p-n junction Accepted Answers:
Mobility of electrons in material A > material B
Quiz :
Week3_Assignment 3)©As temperature
2014 increases,
NPTEL - Privacy the mobility
& Terms - Honor of electrons
Code - FAQs_____
- due to ionized impurity scattering 1 point
and mobility of electrons _____ due to phonon scattering.
A project
Weekof 3 In association with
assignment Increases, decreases
solution
Decreases, decreases
New Lesson Funded by
Decreases, increases

Powered
Increases, by
increases
p-n junction

Applications of
p-n junctions Score: 0
and details of Accepted Answers:
metal- Increases, decreases
semiconductor
junction 4) If the total mobility of electrons in a semiconductor material is 2000 cm2/V.s and the1 point
ionized impurity limited mobility is 10000 cm2/V.s, then phonon limited mobility is
Bipolar Junction
Transistor 500 cm2/V.s
5000 cm2/V.s
Metal Oxide
Semiconductor 6000 cm2/V.s
Capacitor
2500 cm2/V.s
MOSFET No, the answer is incorrect.
Score: 0
Interaction
session Accepted Answers:
2500 cm2/V.s
DOWNLOAD
5) Calculate the mean scattering time of an electron having mobility of 3000 cm2/V.s at 300 1 point
VIDEO
K. Assume effective mass as mn=0.3*m0 .
Text Transcripts
15 s
Compound 10 ms
Semiconductors
0.5 ps
Opto-electronic 1 us
devices: Solar
cells and photo- No, the answer is incorrect.
detectors Score: 0
Accepted Answers:
Opto-electronic
0.5 ps
devices: Light
Emitting Diodes 6) In an n-type semiconductor, electron concentration varies linearly 1 point
(LED)
from 5 x 1019
to 2 x 1016 cm-3
over 1 cm. Calculate the diffusion current
Applications of density at 300 K? Assume Dn =30 cm2/s.
transistors and
basics of 240 A/cm2
microelectronic
fabrication 1 A/cm2
24 A/cm2
10 A/cm2
Score: 0
Accepted Answers:
240 A/cm2
7) Minority carriers are injected at one end of an n-type semiconductor and electric field of 70 1 point
V/cm is applied across it, which moves the carriers by 5 cm in 300 µs. Calculate the diffusion constant
of the minority carriers at 300 K
100.4 cm2/s
72.5 cm2/s
6.2 cm2/s
0.4 cm2/s

Score: 0

Accepted Answers:
6.2 cm2/s
8) A semiconductor with pn0 =1016 cm-3 is illuminated with light and 1 point
1012 cm-3 electron-hole pairs are generated every 3 us. Find the minority carrier concentration.
Assume Tn = Tp = 1 us and ni = 1010 cm-3
1010 cm-3
1016 cm-3
2 X1020 cm-3
3X1011 cm-3

Score: 0
Accepted Answers:
3X1011 cm-3
9) What is the charge state of an occupied donor (i.e. donor atom occupied by electron)? 1 point
Negative
Positive
Neutral
None of the above

Score: 0
Accepted Answers:
Neutral
10)What is the charge state of an unoccupied acceptor (i.e. acceptor atom not occupied by 1 point
electron)?
Positive
Negative
Neutral
None of the above

Score: 0
Accepted Answers:
Neutral
Previous Page End


Unit 5 - p-n junction

Register for
Certification exam Week 4 - Assignment
outline
assignment.
How to access 1) Calculate the built-in potential for a Silicon P-N junction with ND=10^16/cm3 1 point
the portal and NA = 10^19/cm3 at 300 K. Assume ni = 10^10/cm3
Basics of 0.9 V
semiconductor
physics 2V
0.05 V
Equilibrium
carrier 1.5 V
concentration
Carrier transport Score: 0
Accepted Answers:
p-n junction 0.9 V
Quiz : Week 4 - 2) Calculate the depletion width of a Silicon P-N junction with ND=10^16/cm3 2 points
Assignment and NA = 10^18/cm3 at 300 K. Assume ni = 1010 cm-3, ɛs = ɛ0 x ɛSi = 8.854x10^-14
p-n junction F/cm x 11.7.
under
equilibrium 3.2 X 10^-5 cm
p-n junction 5.2 X 10^-7 cm
under
equilibrium 7.2 X 10^-3 cm
(contd.)
1.2 X 10^-2 cm
p-n junction
under bias
Score: 0
p-n junction
under bias
Accepted Answers:
(contd.) 3.2 X 10^-5 cm
p-n junction: 3) Calculate the maximum electric field at zero bias for question no. 2 1 point
generation-
recombination 15 X 10^6 V/cm
currents
5 X 10^4 V/cm
Assignment_4_Solutions
© 20147NPTEL
X 10^2- V/cm
Privacy & Terms - Honor Code - FAQs -
Applications
A project of of In association with
20 X 10^2V/cm
p-n junctions
and details of No, the answer is incorrect.
metal-
Score: 0
semiconductor Funded by
junction Accepted Answers:

5 X 10^4 V/cm
Powered by
Bipolar Junction
Transistor 4) Calculate the donor atom concentration (ND) in a Silicon P-N junction to get a 1 point
built-in potential of 0.77 V, with NA = 10^18/cm3 at 300 K. Assume ni = 10^10/cm3
Metal Oxide
Semiconductor
10^19/cm3
Capacitor
10^18/cm3
MOSFET
10^15/cm3
Interaction 10^20/cm3
session
DOWNLOAD Score: 0
VIDEO Accepted Answers:
10^15/cm3
Text Transcripts
5) For a GaAs P+-N diode and a GaN N+-P diode (P+ indicates heavy P doping 1 point
Compound and N+ indicates heavy N doping, neglect heavy doping effects), which of the following
Semiconductors statements is true.
Opto-electronic Depletion region has greater width in N region for GaAs diode while depletion
devices: Solar
region has greater width in P region in GaN diode.
cells and photo-
detectors Depletion region has greater width in P+ region for GaAs diode while depletion
region has greater width in P region in GaN diode.
Opto-electronic
devices: Light Depletion region has greater width in N region for GaAs diode while depletion
Emitting Diodes region has greater width in N+ region in GaN diode.
(LED)
Depletion region has greater width in N+ region for GaAs diode while depletion
Applications of region has greater width in P+ region in GaN diode.
transistors and
basics of
microelectronic Score: 0
fabrication Accepted Answers:
Depletion region has greater width in N region for GaAs diode while depletion region has
greater width in P region in GaN diode.
6) Consider an ideal PN junction diode with cross-section dimension of 10 um X 1 point
10um. The reverse-saturation current density is 0.1A/m2. At a forward bias voltage of
0.5V across the diode, the forward current flowing through the diode is (Assume thermal
energy is 25meV and ignore recombination and generation effects)
4.85 mA
4.8 A
9.7 mA
19.4 mA

Score: 0
Accepted Answers:
4.85 mA
7) Consider diodes made of four different materials, namely, Gallium Nitride, 1 point
Gallium Arsenide, Silicon and Germanium. If there is a requirement of a switch which
has good off-state characteristics i.e. it should have very low off state current (Reverse
biased diode can act as switch in off-state), diode made of which material satisfies this
requirement better
Gallium Arsenide
Germanium

Silicon
Gallium Nitride
Score: 0
Accepted Answers:
Gallium Nitride
8) Consider diodes made of four different materials, namely, Gallium Nitride, 1 point
Gallium Arsenide, Silicon and Germanium. If there is a requirement of a switch which
has good on-state characteristics i.e. it should have very low on state voltage drop
(Forward biased diode can act as switch in on-state), diode made of which material
satisfies this requirement better?
Gallium Arsenide
Germanium
Silicon
Gallium nitride

Score: 0
Accepted Answers:
Germanium
9) Consider a semiconductor material in which electrons and holes have the same 1 point
capture cross sections and thermal velocities. A p-n junction is formed using this material
and all the trap levels in the depletion region lie at the mid-gap. As the doping of P and N
sides of the junction is reduced (but is still much greater than intrinsic concentration), the
generation current under reverse bias.
Increases
Decreases
Remains same
Needs more information

Score: 0
Accepted Answers:
Increases
Previous Page End


Unit 6 -
Applications of p-n junctions and details of metal-
semiconductor junction
Register for
Certification exam week 5 assignment
outline
assignment.
How to access 1) Which of the following criteria must be true in order to get a good Ohmic contact to a 1 point
the portal semiconductor?
Basics of Choose a metal with a high Schottky barrier height.

semiconductor
physics Use a lightly doped semiconductor.
Introduce defects into the semiconductor to lower its lifetime.

Equilibrium
carrier Dope the semiconductor very heavily.
concentration
Carrier transport Score: 0
Accepted Answers:
p-n junction Dope the semiconductor very heavily.
Applications of 2) Under forward bias, how does current in a Schottky diode compared to PN junction diode? 1 point
p-n junctions
and details of The SD current is much larger than the PN junction current due to majority carrier transport.
metal-
semiconductor The SD current is much larger than the PN junction current due to minority carrier transport.
junction The SD current is much smaller than the PN junction current due to minority carrier transport.
Application of The PN junction current is much higher than SD diode current due to minority and majority
p-n junctions carrier transport.
Breakdown of No, the answer is incorrect.
junction and
Score: 0
C-V profiling
Accepted Answers:
Introduction to
The SD current is much larger than the PN junction current due to majority carrier transport.
Schottky
junction
3) You are given a metal semiconductor junction at room temperature in which the work 1 point
Schottky function of the metal is equal to the electron affinity of the semiconductor plus 3kBT (i.e. Φ M = χ +
junction under 3kBT ) and the Fermi level in the semiconductor is 3kBT below EC . The semiconductor has a band
equilibrium gap©of2014
1 eV.NPTEL
What-isPrivacy & Terms
the type of the -semiconductor?
Honor Code - FAQs -
Schottky
junction under n-type
bias
p-type
Quiz : week 5 Funded by
Intrinsic
assignment

Week NonePowered by
of the above
5_Assignment
Solution No, the answer is incorrect.
Score: 0
Bipolar Junction Accepted Answers:
Transistor
n-type
Metal Oxide 4) In above question (Q3) what is the numerical value of Vbi..? 1 point
Semiconductor
Capacitor
0.5 eV
MOSFET 0 eV
1.2 eV
Interaction
session 0.8 eV

DOWNLOAD
VIDEO Score: 0
Accepted Answers:
Text Transcripts 0 eV
5) Consider a switch X is made of Schottky diode and a switch Y is made of P-N junction 1 point
Compound
Semiconductors diode, which of the following statement is true?
Opto-electronic
devices: Solar X will have large reverse current, high on current and fast transient response compared to Y.
cells and photo-
detectors X will have low reverse current, high on current and fast transient response compared to Y.
X will have low reverse current, high on current and slow transient response compared to Y.
Opto-electronic
devices: Light None of the above
Emitting Diodes
(LED)
Score: 0
transistors and X will have large reverse current, high on current and fast transient response compared to Y.
basics of
microelectronic 6) What is the mechanism of current transport in a Schottky diode under forward bias 1 point
fabrication condition?
Drift and Diffusion of majority carriers
Tunneling of majority carriers
Thermionic emission of minority carriers
Thermionic emission of majority carriers.

Score: 0
Accepted Answers:
Thermionic emission of majority carriers.
7) LED is usually operated in __________ while photo-detector (with good performance i.e. 1 point
good current) is operated in ________ respectively.
Forward bias, Forward bias
Forward bias, Reverse bias
Reverse bias, Forward bias
Reverse bias, Reverse bias

Score: 0
Accepted Answers:

Forward bias, Reverse bias
8) Which of the following is false about Zener breakdown? 1 point
It requires a junction between heavily doped p and n regions i.e. p+/n+ junction
It can occur in a junction with highly doped p side and very lightly doped n-side i.e. p+/n
junction
It occurs due to tunneling of carriers across the junction
It occurs due to very high electric field established across the p-n junction

Score: 0
Accepted Answers:
It can occur in a junction with highly doped p side and very lightly doped n-side i.e. p+/n junction
9) P-N junction made of which of these materials give the highest avalanche breakdown 1 point
voltage?
Gallium arsenide
Gallium nitride
Beta-Gallium oxide
Silicon carbide

Score: 0
Accepted Answers:
Beta-Gallium oxide
10)The capacitance of a p+-n junction _________ when the reverse bias across it increases 1 point
while the capacitance of a n+-p junction ________ as the reverse bias across the junction decreases.
Increases, decreases
Decreases, decreases
Increases, increases

Score: 0
Accepted Answers:
Previous Page End


Unit 7 - Bipolar
Junction Transistor
Register for
Certification exam Week 6_Assignment
outline
assignment.
How to access 1) When a silicon diode is forward biased, what is VBE for a C-E configuration? 1 point
the portal
Voltage-divider Bias
Basics of
semiconductor 0.4 V
physics 0.7 V
Equilibrium Emitter voltage

carrier
concentration
Score: 0
0.7 V
p-n junction
2) When transistors are used in digital circuits they usually operate in the: 1 point
Applications of
p-n junctions Active Region
and details of
Breakdown Region
metal-
semiconductor Saturation and Cutoff Region
junction
Linear Region
Bipolar Junction No, the answer is incorrect.
Transistor
Score: 0
Introduction to Accepted Answers:
transistors: BJT Saturation and Cutoff Region
Basics of BJT
3) You are given two n-p-n BJTs: one made of GaAs (sample X), and the other made of 0.5 points
Working of BJT GaN (sample Y). Consider room temperature situation. Both devices are separately operated under
forward-active mode. Let the gain of the samples be βX and βY respectively.
Working of BJT
(contd)
Consider the following statements, and give your answer as either True or False.
Delays in BJT
Quiz : Week (Band gapNPTEL

© 2014
of: GaAs = 1.4 eV,
- Privacy
GaN -=Honor
& Terms
3.4 eV)
Code - FAQs -
6_Assignment
(a) βX decreases when the quasi-neutral base region of sample X is illuminated with light of
Week
6_Assignment_Solution
wavelength λ = 520 nm with sufficient optical power.
Metal Oxide Funded by

Semiconductor
FalsePowered by
Capacitor
True
MOSFET
Interaction Score: 0
session Accepted Answers:
False
DOWNLOAD
VIDEO 4) Consider details given in Q 3 and answer the question given below: 0.5 points
Text Transcripts b) βY does not change when the quasi-neutral base region of sample Y is illuminated with light of
wavelength λ = 520 nm with sufficient optical power.
Compound
Semiconductors True
Opto-electronic False
devices: Solar
cells and photo-
detectors Score: 0
Accepted Answers:
Opto-electronic True
devices: Light
Emitting Diodes 5) Consider details given in Q 3 and answer the question given below: 0.5 points
(LED)
c) βX increases when the quasi-neutral emitter region of sample X is illuminated with light of
Applications of wavelength λ = 520 nm with sufficient optical power.
transistors and
basics of
microelectronic False
fabrication True

Score: 0
Accepted Answers:
False
6) Consider details given in Q 3 and answer the question given below: 0.5 points
d) βY increases when the quasi-neutral base region of sample Y is illuminated with light of wavelength
λ = 300 nm with sufficient optical power.
False
True

Score: 0
Accepted Answers:
False
7) For an ideal p-n-p transistor, the current components are given by IEp = 4 mA , 2 points
IEn = 0.05 mA, ICp= 3 mA. Determine (a) the emitter efficiency γ, (b) the base transport factor αT?
0.15 & 0.17
0.21 & 0.15
0.98 & 0.75
1&0

Score: 0
Accepted Answers:
0.98 & 0.75

8) For an ideal BJT in forward active region of operation in Common-emitter configuration, the 1 point
collector current is dependent on which of these electrical quantities.
Collector Voltage
Base Current
Collector-Base Voltage
Both a & b

Score: 0
Accepted Answers:
Base Current
9) Among the following two BJT’s A and B, which gives better current transfer ratio and which 1 point
gives higher gain?
BJT A: Emitter injection efficiency is 0.99 and base transport factor is 0.96
BJT B: Emitter injection efficiency is 1 and base transport factor is 0.98
BJT A gives better current transfer ratio but BJT B gives better gain
BJT B gives better current transfer ration but BJT A gives better gain
BJT B gives better current transfer ratio and gain
BJT A gives better current transfer ratio and gain

Score: 0
Accepted Answers:
BJT B gives better current transfer ratio and gain
10)Consider the base-collector junction of a BJT operating in forward-active mode. Assuming 1 point
base doping does not affect the E-B junction operation and neglecting other effects of base doping,
increasing the base doping _______ the gain.
Increases
Decreases
Remains the same
First increases as doping is increased, reaches a maximum and then decreases

Score: 0
Accepted Answers:
Decreases
11)Consider two BJT’s A and B with identical designs, but with A having higher emitter doping 1 point
than B. Neglecting the effects of bandgap narrowing, temperature etc., gain of A is _______ gain of B.
greater than
lesser than
equal to
None of the above

Score: 0
Accepted Answers:
greater than

Previous Page End

Unit 8 - Metal Oxide

Semiconductor Capacitor
Register for
Certification exam week 7_Assignment
outline
assignment.
How to access 1) AtGallium-nitride – Silicon oxide interface, the ratio of electric 1 point
the portal field strength in the oxide to electric field strength in Gallium nitride is
approximately (assume dielectric constant of GaN is 8 and that of
Basics of silicon-dioxide is 4)
semiconductor
physics
0.5
Equilibrium 2
carrier
concentration 1.414
0.7072
Carrier transport
p-n junction Score: 0
Accepted Answers:
Applications of 2
p-n junctions
and details of 2) Calculate the maximum width of the surface depletion region of a 2 points
metal-
MOSCAP with SiO2-Si junction and NA = 10^17 cm-3 (kT/q = 0.026 V, ni =
semiconductor
junction 10^10 cm-3, ξsi = 11.9x8.85 x 10^-14 F/cm)
Bipolar Junction 1 um
Transistor 10um
Metal Oxide 5um

Semiconductor
0.1um
Capacitor
MOS:
Score: 0
Introduction
Accepted Answers:
MOS:
0.1um
Capacitance-
voltage 3) Consider two MOSCAP’s with p-type substrate. MOSCAP A has an 1 point
Ideal MOS P-type doping
© 2014 NPTEL -of 10^16/cm3
Privacy & Terms -while MOSCAP
Honor Code - FAQs -B has a P-type doping of
system:
A project of 10^17/cm3. Which of the following statement
In association with is true?
derivation of
threshold
Threshold voltage of A > Threshold voltage of B
voltage
Threshold voltage of A < Threshold
Funded by voltage of B
MOS C-V in
more details

Poweredvoltage
Threshold by of A = Threshold voltage of B
Quiz : week
7_Assignment
More information required
Week
7_Assignment No, the answer is incorrect.
Solution Score: 0
Accepted Answers:
MOSFET
Threshold voltage of A < Threshold voltage of B
Interaction 4) Consider two MOSCAP’s; MOSCAP A has p-type substrate and 1 point
session MOSCAP B has n-type substrate. If thickness of oxide in both the MOSCAP’s are
increased, which of the following statement is true about magnitude of threshold
DOWNLOAD
VIDEO
voltage?
Text Transcripts Threshold Voltage of MOSCAP A increases while that of B reduces

Threshold Voltage of MOSCAP B increases while that of A reduces
Compound
Semiconductors Threshold Voltage of both MOSCAP's increase
Threshold Voltage of both MOSCAP's decrease
Opto-electronic
devices: Solar No, the answer is incorrect.
cells and photo- Score: 0
detectors
Accepted Answers:
Opto-electronic
Threshold Voltage of both MOSCAP's increase
devices: Light 5) Consider two MOSCAP’s; MOSCAP A has p-type substrate and 1 point
Emitting Diodes
(LED) MOSCAP B has n-type substrate. If both the MOSCAP’s have same amount of
positive fixed oxide charge, which of the following statement is true about
Applications of magnitude of threshold voltage?
transistors and
basics of Addition of fixed oxide charge increases threshold voltage of A
microelectronic
fabrication Addition of fixed oxide charge does not change the threshold voltage of B
Addition of fixed oxide charge decreases threshold voltage of A
Addition of fixed oxide charge does not change the threshold voltage of A
Score: 0
Accepted Answers:
Addition of fixed oxide charge decreases threshold voltage of A
6) The
quantity, φF , is a critical parameter in MOS theory. What 1 point
happens when the surface potential equals 2φF ?
The majority carrier concentration at the surface equals the majority
carrier concentration in the bulk
The majority carrier concentration at the surface equals the
intrinsic carrier concentration, ni
The minority carrier concentration at the surface equals the
majority carrier concentration in the bulk
The minority carrier concentration at the surface equals the
intrinsic carrier concentration, ni
Score: 0
Accepted Answers:
The minority carrier concentration at the surface equals the majority
carrier concentration in the bulk
7) What is a “donor like” surface state? 1 point

A surface state that is neutral when filled.

A surface state that is neutral when empty
A surface state that dopes the semiconductor surface n-type
A surface state cause by the presence of a phosphorus or
arsenic atoms on the surface
Score: 0
Accepted Answers:
A surface state that is neutral when filled.
8) What effect does a metal-semiconductor work function 1 point
difference have on a C(V) characteristic for an MOS capacitor?
It increases the oxide capacitance.
It decreases the oxide capacitance.
It increases the inversion capacitance.
It translates the C(VG) vs. VG characteristic to the left or right
on the voltage axis
Score: 0
Accepted Answers:
It translates the C(VG) vs. VG characteristic to the left or right on the
voltage axis
9) What is an "acceptor" like surface state? 1 point
A state which is neutral when empty
A state which is neutral when it is filled with electron
A state that is positive when empty
A state that is positive when filled

Score: 0
Accepted Answers:
A state which is neutral when empty
Previous Page End


Unit 9 - MOSFET
Register for
Certification exam Week 8_Assignmnet
outline
assignment.
How to access 1) Which of the following statements about semiconductor MOSFET are true? 1 point
the portal
Drain current of a p-channel MOSFET is constituted mainly by holes
Basics of
semiconductor The drain and source can be used interchangeably i.e. MOSFET is a symmetric device
physics Drain current of a n-channel MOSFET is constituted mainly by holes
Equilibrium All of the above

carrier
concentration
Score: 0
Drain current of a p-channel MOSFET is constituted mainly by holes
p-n junction The drain and source can be used interchangeably i.e. MOSFET is a symmetric device
Applications of 2) The diodes formed between the source/substrate junction and drain/substrate junction of a 1 point
p-n junctions usual long-channel n-channel MOSFET is ________ and p-channel MOSFET is ________
and details of respectively.
metal-
semiconductor n+/p junction and p+/n junction
junction
p+/n junction and n+/p junction
Bipolar Junction
p/n junction and n+/p junction
Transistor
p+/n junction and p/n junction
Metal Oxide
Semiconductor No, the answer is incorrect.
Capacitor Score: 0
Accepted Answers:
MOSFET n+/p junction and p+/n junction
MOSFET – An 3) For an n-channel MOSFET, the conditions for saturation region of operation is ________ 1 point
introduction while the condition for linear or triode region of operation are _________ respectively. (VDS is drain-
Gradual source voltage, VGS is gate-source voltage and Vth is the threshold voltage. Assume gradual channel
Channel approximation).
Approximation:
Derivation of © 2014VDS VGS
NPTEL – Vth, &VDS
- Privacy < VGS
Terms + Vth
- Honor and- Vth
Code FAQs>0
-
I-V
A project of
characteristics In association
VDS VGS – Vth, VDS < VGS – Vth and with
Vth > 0
Substrate bias VDS VGS – Vth, VDS < VGS - Vth and Vth > 0
effect and
sub-threshold VDS VGS – Vth, VDS < VGS – Vth and Vth < 0
Funded by
conduction in


Powered by
Score: 0
Short Channel
Effects in Accepted Answers:
MOSFET VDS VGS – Vth, VDS < VGS – Vth and Vth > 0
Quiz : Week
4) Consider two Silicon MOSFET’s A and B with same dimensions and Silicon-oxide gate 1 point
8_Assignmnet
dielectric. MOSFET A is a p-channel MOSFET with oxide thickness of 100nm while MOSFET B is a
Week n-channel MOSFET with oxide thickness of 50nm. Which of the following statement is true when same
8_Assignment amount of gate voltage (which is greater than the threshold voltage) is applied to both the MOSFET’s
Solution
and they are operating in the saturation region?
Interaction
session MOSFET A will have a higher value of drain current
MOSFET B will have a higher value of drain current

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VIDEO Drain current levels in both the MOSFET’s is same
More information is required

Text Transcripts
Compound Score: 0
Semiconductors
Accepted Answers:
MOSFET B will have a higher value of drain current
Opto-electronic
devices: Solar 5) A current source is an electrical element which supplies a constant magnitude of current to 1 point
cells and photo-
a load, irrespective of the value of a load connected across it. Assuming a resistive load, in which of
detectors
the regions of operation can I use a Silicon n-channel MOSFET with a long-channel as a current
source.
Opto-electronic
devices: Light
Emitting Diodes Linear region
(LED)
Non-linear region
Applications of Saturation region

transistors and
MOSFET cannot be used as a current source
basics of
microelectronic
fabrication
Score: 0
Accepted Answers:
Saturation region
6) In MOSFET devices the N-channel type is better than the P – Channel type in the 0 points
following respects.
N-Channel type has better immunity
N-Channel type is faster than P-Channel Type
N-Channel type has lower noise level than P-Channel Type
N-Channel type has better drive capability

Score: 0
Accepted Answers:
N-Channel type is faster than P-Channel Type
7) When drain voltage equals the pinch-off-voltage, then drain current …………. with the 1 point
increase in drain voltage
Decreases
Increases
Remains Constant
None of the above


Score: 0
Accepted Answers:
Remains Constant
8) In MOSFET scaling, when we start scaling down the gate oxide thickness, it will lead to 1 point
…………………………….
Increase in S/D contact resistance
P-N Junction breakdown
Leakage current increase due to tunnelling
None of the above

Score: 0
Accepted Answers:
Leakage current increase due to tunnelling
9) The drain induced barrier lowering (DIBL) occurs when the drain voltage of the short 1 point
channel MOSFET increases from ………………….. towards the ………………………….
Saturation Region/ Cut-off Region
Linear Region/Saturation Region
Cut-off Region/Linear Region
None of the above

Score: 0
Accepted Answers:
Linear Region/Saturation Region
10)Which among the following is one of the reliability problem related to short channel 1 point
MOSFET?
Impact ionization due to high electric filed near the drain side
Avalanche breakdown of the source due to high electric filed
Avalanche breakdown of gate due to high electric filed
None of the above

Score: 0
Accepted Answers:
Impact ionization due to high electric filed near the drain side
Previous Page End


Fundamentals of semiconductor devices - - Unit... https://onlinecourses-archive.nptel.ac.in/noc19_...
Unit 13 - Compound
Semiconductors
Register for
outline
assignment.
How to access 1) Which of the following are examples of binary compound III-V semiconductors? 1 point
the portal
SiC
Basics of
semiconductor InP
physics GaN
Equilibrium CdTe
carrier
concentration
Score: 0
InP
p-n junction GaN
Applications of 2) Which of these is an example of a 2D-material? 1 point

p-n junctions
and details of GaP
metal-
semiconductor MoS2
junction None of these
Bipolar Junction Both of these

Transistor
Score: 0
Metal Oxide
Semiconductor Accepted Answers:
Capacitor MoS2
MOSFET 3) InGaAs is used in Fiber optic communication with wavelength used being 1.55um. What is 2 points
the approximate composition of Indium in InGaAs needed to achieve operation at this wavelength
Interaction (using InAs bandgap of 0.354eV and GaAs bandgap of 1.4eV and assuming Vegard's law
session approximation).

Funded by

Introduction to Score: 0 Powered by

compound Accepted Answers:
semiconductors
57%
Basics of
heterojunctions
4) The pseudomorphic thin layer (25nm) of Al0.25Ga0.75N grown epitaxially on GaN is 1 point
(Lattice constant of GaN is 4.52A and that of AlN is 3.11A)
Band diagram
of
Tensile strained
heterojunctions
Compressive strained
Heterojunctions
(contd) Unstrained
Heterojunction Epitaxial growth is not possible for the given composition of Al in AlGaAs
transistors
III-nitrides Score: 0
Quiz : Week Accepted Answers:
9_Assignment Tensile strained
Assignmnet
5) In a heterojunction formed by undoped Al0.25Ga0.75N and GaN, the total band 1 point
9_Solutions
discontinuity (assuming Vegard's law approximation, bandgap of AlN is 6.2eV and bandgap of GaN is
Opto-electronic 3.4eV) is approximately
devices: Solar
cells and photo- 1.2eV
detectors
0.6eV
Opto-electronic 2eV
devices: Light
Emitting Diodes 0eV
(LED)
Score: 0
Applications of
transistors and Accepted Answers:
basics of 0.6eV
microelectronic
fabrication 6) Which among the following material do not have inversion symmetry? 1 point
GaAs
AlGaAs
Si
InN

Score: 0
Accepted Answers:
InN
7) Which among the following two nitrides are used to make white leds? 1 point
5-10% of InN and 90-95% of GaN
5-10% of AlN and 90-95% of GaN
None of the above

Score: 0
Accepted Answers:
8) Which among the following device will not suffer from carrier freeze out? 1 point
nMOS

pMOS
GaAs HEMT
GaN HEMT

Score: 0
Accepted Answers:
GaN HEMT
9) The 2DEG in GaN HEMT is an explicit function of ………………………… and 1 point

………………………
Surface states and Polarization
Doping and Scattering
Surface states and doping
None of the above

Score: 0
Accepted Answers:
Surface states and Polarization
10)What are the advantages of GaAs or GaN based HEMT devices? 1 point
Carrier confinement, high current
High on current and High breakdown voltage
Low off current and High breakdown voltage
None of the above

Score: 0
Accepted Answers:
Carrier confinement, high current
Previous Page End

Unit 14 -
Opto-electronic devices: Solar cells and photo-
detectors
Register for
outline
assignment.
How to access 1) Consider a silicon n+p junction solar cell with a 1 cm^2 surface area and NA = 10^15/cm3 2 points
the portal . Calculate IL (light current) and Voc (open circuit voltage).
Assume Dn= 35cm2sec-1, τn = 2.57µ sec and GL= 2.7*10^19 cm3 sec-1, VT = 25.86*10^-3, ni=
Basics of 1.5*10^10
semiconductor
physics
IL= 1.33*10^-10 A, Voc= 0.505V
Equilibrium IL = 40.95 mA, Voc=0.505V

carrier
concentration IL = 1.33*10^-10 A, Voc = 0.852V
IL = 40.95 mA, Voc = 0.852V

Carrier transport
Accepted Answers:
Applications of IL = 40.95 mA, Voc=0.505V
p-n junctions
and details of 2) Photodiodes operate by absorption of photons or charged particles and generate a flow of 2 points
metal- current in an external circuit, _______ to the incident power. The light is absorbed __________ with
semiconductor
distance and is _________ to the absorption coefficient.
junction
Proportional, exponentially, proportional

Bipolar Junction
Transistor Proportional, logarithmically, inversely proportional
Inversely proportional, exponentially, unrelated

Metal Oxide
Semiconductor None of the above
Capacitor
MOSFET Score: 0
Accepted Answers:
Interaction
Proportional, exponentially, proportional
Funded by

Which of the following

Powered is by
correct.?
Compound
Semiconductors
All the above statements are correct.
Opto-electronic All the above statements are wrong
devices: Solar
cells and photo- Only statement (2) is correct
detectors
Solar cell Statement (1) and (2) are correct

basics
Solar cell No, the answer is incorrect.

(contd.) Score: 0
Solar cell: Accepted Answers:
Shockley Only statement (2) is correct
Quiesser Limit
4) Consider the following statements: 1 point
Basics of
(1) Photodetectors are always noisier than solar cells.
photodetectors
(2) The theoretical responsivity of UV detector is always lower than that of IF (infra-red) detectors.
Photodetectors: (assuming QE=1 and no gain in both the cases.)
figures of merit
(3) Silicon can be used as detector to detect wavelength of 300nm.
and types of
devices
Which of the following is correct.?
Junction
photodetectors
All the above statements are correct
Quiz : Week All the above statements are wrong.
10_Assignment
Only statement (1) is correct
Assignmnet
10_Solutions Only statement (2) is correct.
Opto-electronic No, the answer is incorrect.

devices: Light Score: 0
Emitting Diodes
Accepted Answers:
(LED)
All the above statements are correct
Applications of 5) A solar cell has Voc= 0.7V. Which of the following statements is correct? 1 point
transistors and
basics of
Germanium can be used to make such a solar cell.
microelectronic
fabrication It is possible to estimate the fill factor of the solar cell without knowing any other parameter
Short circuit current of the solar cell can be estimated from this information.
All the above statements are incorrect.

Score: 0
Accepted Answers:
It is possible to estimate the fill factor of the solar cell without knowing any other parameter
6) A solar cell is illuminated uniformly by monochromatic light of wavelength 500nm and 1 point
intensity 25mW/cm2. What is the upper limit to short circuit current output of the cell if its bandgap is
1.5eV?
10mA/cm2
100mA/cm2
50mA/cm2
5mA/cm2

Score: 0
Accepted Answers:
10mA/cm2

7) Why are photodetectors inherently noisier than solar cells? 1 point
Load Resistance in photodetector is much lower than in solar cell resulting in lower
equivalent circuit resistance.
Thermal noise in Photodetector varies inversely as the resistance, leading to more noise in
detectors.
Noise is higher for Higher Bandwidth.
All the above

Score: 0
Accepted Answers:
All the above
8) A photodetector can have 100% efficiency. Choose the correct statement. 1 point
Photodetector detects photons of particular wavelength only.
Detectors are reverse-biased during operation and this can lead to internal gain.
Both Statement (a) and (b) are correct
Both statement (a) and (b) are incorrect.

Score: 0
Accepted Answers:
Both Statement (a) and (b) are correct
Previous Page End

Unit 15 -
Opto-electronic devices: Light Emitting Diodes (LED)
Register for
outline
assignment.
How to access 1) LED operates under __________ with light being emitted mainly due to __________ and 1 point
the portal mainly requires ___________
Basics of Forward bias, band-to-band recombination, direct band gap

semiconductor
physics Reverse bias, band-to-band recombination, direct bandgap
Forward bias, Auger recombination, indirect bandgap

Equilibrium
carrier
concentration Forward bias, S-R-H recombination, direct bandgap
Carrier transport
Accepted Answers:
Applications of Forward bias, band-to-band recombination, direct band gap
p-n junctions
and details of 2) The energy of photon emitted due to band-to-band recombination in an LED is 1 point
metal- ___________ the bandgap energy and depends on _____________ and the emission is _________.
semiconductor
junction
Greater than, effective mass of holes, monochromatic
Bipolar Junction Lesser than, effective mass of electrons, not monochromatic

Transistor
Greater than, effective mass of holes and electrons, not monochromatic
Metal Oxide Greater than, effective mass of holes and electrons, not monochromatic
Semiconductor
Capacitor No, the answer is incorrect.
Score: 0
MOSFET Accepted Answers:
Greater than, effective mass of holes and electrons, not monochromatic
Interaction
session 3) There are 2 LED’s. LED A is a blue LED while LED B is a red LED. Which of them have a 1 point
shorter spread of emission over wavelength.
Funded by


Powered by
Opto-electronic
Score: 0
devices: Solar
cells and photo- Accepted Answers:
detectors LED A
Opto-electronic 4) The wavelength used for fiber optic communication is __________ and the material which 1 point
devices: Light can ensure efficient operation for this wavelength is ________
Emitting Diodes
(LED) 2um, SiC
Basics of 1.55um, InGaAs
recombination
2um, GaN
Basics of LED
1.55 um, AlGaN
LED: light
extraction and No, the answer is incorrect.
design issues Score: 0
Visible LED: Accepted Answers:

photometry and 1.55um, InGaAs
colorimetry
5) Which of these properties lead to an LED with better efficiency? 1 point
Quiz : Week
11_Assignment
Radiative recombination time: 1ns and Non-radiative recombination: 100us
Assignmnet
11_Solutions
Applications of
transistors and
basics of Radiative recombination time: 10ns and Non-radiative recombination: 100ns
microelectronic
fabrication
Score: 0
Accepted Answers:
6) The relation between WPE (Wall Plug efficiency) and EQE (External quantum efficiency) is 1 point
WPE > EQE
WPE < EQE
WPE = EQE
There is no relation between the two.

Score: 0
Accepted Answers:
WPE < EQE
7) A GaAs LED radiates at 600 nm, with an external quantum efficiency of 20%, If V=10 V 2 points
calculate the WPE (Wall Plug efficiency)?
4%
100 %
20 %
50 %

Score: 0
Accepted Answers:
4%
8) A GaAs LED with an external quantum efficiency of 20%, If V=10 V and the WPE (Wall 2 points

Plug efficiency) is 7.8 %. Calculate the wavelength at which it emits?
320 nm
820 nm
930 nm
130 nm

Score: 0
Accepted Answers:
320 nm
Previous Page End

Unit 16 -
Applications of transistors and basics of
microelectronic fabrication
Register for
outline
assignment.
How to access 1) In the three terminal breakdown measurement of a GaN HEMT with a pinch-off voltage of 1 point
the portal -2V, which of these gate voltages are permissible assuming a drain voltage of 10V (neglecting gate
leakage and other leakages)?
Basics of
semiconductor
physics
4V
Equilibrium -1V
carrier
concentration 1V
-4V
Carrier transport
Accepted Answers:
Applications of -4V
p-n junctions
and details of 2) A power MOSFET is used as a switch. The switch operates in _________ region with 1 point
metal- _________ On-state resistance in on-state and _________ region in off-state with _______ breakdown
semiconductor
voltage respectively.
junction
Bipolar Junction
Transistor Linear, low, cut-off, high
Saturation, low, cut-off, low

Metal Oxide
Semiconductor Linear, high, cut-off, low
Capacitor
Saturation, low, cut-off, low

Score: 0
Interaction Accepted Answers:
Funded by

Powered
Switching loss by
Compound
Semiconductors
All losses are independent of frequency of operation
Opto-electronic No, the answer is incorrect.

devices: Solar Score: 0
cells and photo-
detectors Accepted Answers:
Switching loss
Opto-electronic
4) A transistor has a very low on-resistance, high breakdown-voltage and a very high degree 1 point
devices: Light
Emitting Diodes of channel length modulation i.e. the output resistance of the transistor is very low. Which of the
(LED) following applications can this transistor be used for?
Applications of
transistors and Power switching
basics of
microelectronic RF amplifier
fabrication
Analog amplifier
Transistors for None of the above
power
electronics No, the answer is incorrect.
Score: 0
Transistors for
power Accepted Answers:
electronics Power switching
(contd.) & for
RF electronics 5) A process engineer is designing an nMOS transistor for high speed digital logic. Which 1 point
Transistors for
method should he adopt for gate oxide deposition?
RF (contd.) and
transistors for Wet oxidation
Memory
Dry oxidation
Basics of
Sputtering
microelectronic
fabrication Evaporation
Microelectronic No, the answer is incorrect.
fabrication
Score: 0
(contd.)
Accepted Answers:
Summary
Dry oxidation
Quiz : Week
12_Assignment 6) A process engineer is designing an nMOS transistor for high speed digital logic. Which 1 point
method should he adopt to get an anisotropic doping for channel?
Assignmnet
12_Solutions
Diffusion
Ion implantation
Both a and b
None of the above

Score: 0
Accepted Answers:
Ion implantation
7) In a CMOS transistor, which method should we use for source and drain contact to get a 1 point
conformal metal layer?
Evaporation
Sputtering
Both a and b
None of the above


Score: 0
Accepted Answers:
Sputtering
8) In the fabrication lab in IISc, optical lithography is used to define 100 um interconnects for 1 point
CMOS transistor. What is the wavelength used in this optical lithography technique?
365 nm
450 nm
220 nm
None of the above

Score: 0
Accepted Answers:
365 nm
9) A process engineer is designing an nMOS transistor for digital logic. Which method should 1 point
he adopt to get anisotropic etching of silicon dioxide?
Wet etching
Dry etching
Both a and b
None of the above

Score: 0
Accepted Answers:
Dry etching
10)What does sub-nm technology node represent in silicon technology? 1 point
Gate width
Poly pitch
Both a and b
None of the above

Score: 0
Accepted Answers:
Poly pitch
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Assignments - NOC - Fundamentals - of - Semiconductor Devices

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Assignments - NOC - Fundamentals - of - Semiconductor Devices

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Fundamentals of semiconductor devices - - Unit ... https://onlinecourses-archive.nptel.ac.in/noc19_...

Courses » Fundamentals of semiconductor devices

Announcements Course Ask a Question Progress FAQ

Quiz : Week 0 Transistors

1 of 4 Wednesday 22 May 2019 10:16 AM

Transistor Score: 0 Powered by

DOWNLOAD 100 µm to a few mm

Applications of Accepted Answers:

No, the answer is incorrect.

Silicon (1.1 eV)

Gallium Nitride, GaN (3.4 eV)

Gallium Arsenide, GaAs (1.42 eV)

Germanium (0.68 eV)

No, the answer is incorrect.

8) Which of the following statements is correct? 1 point

2 of 4 Wednesday 22 May 2019 10:16 AM

A diode can be either Schottky diode or a p-n junction diode

A silicon p-n junction cannot act like a solar cell

A silicon p-n junction can have a turn-on voltage of 2 V

No, the answer is incorrect.

Less than 10%

Less than 20%

Slightly above 30%

No, the answer is incorrect.

Silicon cannot absorb mid-IR, hence can’t work in mid-IR

No, the answer is incorrect.

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3 of 4 Wednesday 22 May 2019 10:16 AM

4 of 4 Wednesday 22 May 2019 10:16 AM

Courses » Fundamentals of semiconductor devices

Announcements Course Ask a Question Progress FAQ

How to access 1) 1) Lattice constant of a material depends on 1 point

Introduction to None of these

Minimum and minimum

1 of 4 Wednesday 22 May 2019 10:16 AM

junction Accepted Answers:

MOSFET Effective mass of A < B

Text Transcripts Accepted Answers:

Opto-electronic Orientation of crystal

Applications of Accepted Answers:

No, the answer is incorrect.

No, the answer is incorrect.

2 of 4 Wednesday 22 May 2019 10:16 AM

All of the above

None of the above

No, the answer is incorrect.

No, the answer is incorrect.

10)Which of the following statements is true in case of an LED? 1 point

LEDs cannot be made of any semiconductor

Only direct band gap semiconductors can be used to make LEDs

No, the answer is incorrect.

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3 of 4 Wednesday 22 May 2019 10:16 AM

4 of 4 Wednesday 22 May 2019 10:16 AM

Courses » Fundamentals of semiconductor devices

Announcements Course Ask a Question Progress FAQ

Doping and No, the answer is incorrect.

© 2014 NPTEL - Privacy & Terms - Honor Code - FAQs -

1 of 3 Wednesday 22 May 2019 10:17 AM

semiconductor EFi - E midPowered

Compound No, the answer is incorrect.

No, the answer is incorrect.

Electron concentration in sample X > sample Y