Conducted Noise Investigation for IMS Based GaN HEMT

Power Module by Black Box Model

Amina GAHFIF Francois COSTA Pierre-Etienne LÉVY

SAFRAN S.A. Université Paris Est Créteil ENS Paris-Saclay
SATIE SATIE SATIE
Cachan, France Cachan, France Cachan, France
amina.matouk@safrangroup.com

Mounira BERKANI Bertrand REVOL Marwan ALI

Université Paris Est Créteil SAFRAN SA SAFRAN SA
SATIE, Magny les Hameaux, France Magny les Hameaux, France
Cachan, France

Abstract—Boost converters based on GaN components are

known to generate high levels of electromagnetic interferences
(EMI) in common mode (CM) and / or in differential mode
(DM). In this article, it is shown how a part of the CM current
comes from the DM source and how to significantly reduce this
effect. Solution is based on “balancing” the propagation paths
between the positive line and the return line with taking care of
a well-balanced inductances and parasitic capacitances
distribution. By reducing significantly, CM current total
electromagnetic interferences also reduce and thus facilitates
compliance with electromagnetic compatibility (EMC)
standards. This approach is a good prerequisite for an optimal
designing of the filter afterward. Fig. 1 Illustrative diagram of the boost converter simulated on Ltspice

Keywords— Power electronics, Electromagnetic Interference, TABLE I. DESCRIPTION OF THE COMPONENTS

GaN Boost Converter, Common Mode, Unbalanced Converter, Components Description
I. INTRODUCTION Decoupling capacitors 20 µF
Inductors L1/L2 = 6.25 µH/ 12.5 µH/10 nH
In more electric aircraft applications, power electronics
GSP65R13HB-EVB 650V 6 kW power.
converters are increasingly present with the wider use of
bandgap semiconductors working at high switching GSP65MB-EVB GSP65R13HB-EVB 650V
frequency. The main benefit is to reduce the volume and to LISN Line impedance stabilization network
increase power densities. However, this induces two major CMG CPG CNG IMS Parasitic capacitors
negative effects: thermal heating and electromagnetic
interferences EMI[1]. In section II, it will be shown that a
solution chosen to manage thermal losses at reduced costs by
using Insulated Metal Substrate (IMS) induces high value of
CM parasitic capacitances, increasing the common mode
current. In order to analyze the impact of this parasitic
capacitance on conversion mode and common mode current,
we propose to use the “black box” model cited in [2]. This will
be discussed in section III. Section IV presents simulations
results showing how the symmetric distribution of the
inductor is not sufficient with the use of IMS. Only the perfect
balancing of the converter including capacitances and
inductors gives satisfying results. Fig. 2 GSP65R13HB-EVB Functional Block Diagram [7]

II. EXPERIMENTAL EVALUATION KIT
The boost converter setup used in this study includes a
GaN System demo board for building a DC-DC Boost
converter (50 V input, 200 V output, 1 kW output power,
switching at 500 kHz). A GSP65R13HB-EVB-650V power
module (Fig.2.) mounted on insulated metal substrate
(IMS),and its corresponding motherboard GSP65MB-EVB
Fig.2 [3] were used for this purpose.
The diagram of the converter is given in Fig. 1. A LISN
has been added at the input for EMI measurements. The main
parasitic elements have been represented by the red color
lumped components.
Using IMS substrate provides a low-cost solution for heat
transfer and for increasing power density, but its parasitic
capacitances, due to the very thin insulating layer and to the
large footprints of the HEMT and the strips, are not negligible
compared to the very small Coss of the GaN HEMT (900 pF /
70 pF). The charge and discharge of these high value
capacitances through the transistors increase their current and
losses and generate common mode currents [4][5]. Therefore,
it is necessary to minimize these capacitances, which depends
on the relative permittivity of the dielectric material, on the
copper surface (routing) and on the insulator thickness.

978-1-7281-5579-1/20/$31.00©2020 European Union

III. BLACK BOX MODEL OF THE NOISE SOURCES
EMC model based on “black box” method including
imbalance of the converter has been used. The methodology
is based on internal impedances identification while the
converter is not operating and then identification of the noise
sources using external current and voltage measurements [6],
[2]. The goal is to represent the converter by equivalent CM
and DM sources associated to equivalent impedances while
considering the dissymmetry of the system. All results given
by the black box model are compared to an accurate circuit
model (LT-spice).
A. Admittances and sources modeling Fig. 4 Propagation path of the systems under test
The procedure of black box modeling will not be detailed
in this paper; these works have already been discussed in [2]. The relationships between the real components impedances
Here we present the “black box” model and a reminder of its and the Zij parameters are:
∗
components as shown in Fig.3. Z Z = (5)

∗
Z Z = (6)

In Fig.5 are plotted the modules of Z Z and Z Z ,

respectively.
|Z11-Z12|[ ]

Fig. 3 Global black box model of the converter (CM and DM)
|Z22-Z12 |[ ]

According to the proposed complete model, the equivalent

sources can be expressed as functions of line currents I and
I which are easily obtained by measurements. The equivalent
CM and DM voltage sources are expressed by:

E I Fig. 5 Modules | |, | | of the Imbalanced Boost

= × (1)
E Z Z +Z Z Z +Z I
Results in Fig.5, show on the one hand, that the resonances
highlighted in red circles are due to an LC parallel circuit
Turning off the common source mode E can allow to whose frequency is mainly fixed by both (L1+L2) and
deduce the modal admittances and and then (CBG+CMG) corresponding to the denominator of equations (5)
turning off the differential mode source E allows to and (6). On the other hand, the resonances in green circles are
calculate admittances and . due to an LC series circuit formed by L1 and CMG for Z
Z impedance and by L2 and CBG for Z Z impedance.
= × (2)
² These resonances, especially that around the frequency
interval 500 kHz -1 MHz range, are very critical because they
=
²

(3) occur in the operating frequency range of the GaN transistors.

So, they are easily excited by the harmonics of the switching
Therefore, the admittance matrix can be expressed as follows: frequency as can be seen in Fig.6.

= × (4)

This last equation shows that the terms YCM-DM and YDM-CM
are responsible for the mode transfers; themselves depending
on the impedance differences Z11-Z12 and Z22-Z12.
dBµV

B. Impact of the configuration Boost

The propagation paths of the CM and DM currents in the
Boost converter are represented in Fig.4. This impedance
circuit is transformed into a T circuit, in order to express
equations (5) and (6).

Fig. 6 Spectrum of CM & DM sources voltage (FFT)

 Therefore, parametric study is essential by varying the
main parameters of the resonances, L1, L2, CMG and CBG. Four
configurations are possible and depicted in table II.
TABLE II. CONFIGURATIONS BOOST

Configuration Description
Imbalanced structure L1=12.5 µH L2=10 nH
(commercial
configuration)
Balanced inductors The main boost inductor has been splite
into two and = L1 = L2 = 6.25 µH
Balanced parasitic C =C this configuration exists Fig. 8 current spectrum
capacitors when the routing area of the phase is equal
to the sum of DC- and DC+ tracks areas. Obtained results clearly show that splitting the inductors
As we can’t change routing areas on the and capacitances gives satisfying results. The impedances Z11
experimental kit an evaluation of this
and Z22 are equal over the entire considered frequency range.
configuration was simulated: C =
C + C = 1.8 nF This indeed leads to a 40 dB diminution of the common mode
current up to 10 MHz. However, higher frequency effects
Balanced structure Perfect symmetry with: C =C and around 1 GHz are caused by the other parasitic elements (ESR,
Z =Z , L1 = L2 = 6.25 µH ESL,) of the converter components which are not changed in
our study. According to the DO 160 Section 21 requirements,
In order to estimate the impact of the imbalanced structure the symmetry of the propagation paths is not enough to reach
on the conversion mode, admittance has been used the required standard levels. However, the reduction of the
because it gives information about differential mode to harmonics levels up to 40 dB can be observed in the case of a
common mode conversion. It should be noted that a fully balanced converter, which is a good improvement for the
quadrupole is symmetrical when = , it means in this filter that is to be implemented afterward.
case that Z = Z and C = C . Indeed, as shown in
equation (2) describing the admittance of mode conversion V. CONCLUSION
only, the equalization of the impedances Z11 and Z22 nullifies IMS is a substrate chosen in high power applications
the admittance conversion mode Y . because it has good properties for thermal dissipation, but the
large capacitances it generates induces a higher common
IV. SIMULATION RESULTS AND DISCUSSION mode current. The conventional methods for symmetrizing
Fig.7 shows the module of the “Black box” model propagation paths in order to minimize conversion from
conversion admittance YDM-CM from differential mode to differential mode to common mode in power converters, such
common mode, respectively for the different configurations as inductor splitting on both lines, remain insufficient. Fully
mentioned above. balanced converter is a good improvement for the filter that is
to be implemented afterward. This has to be taken into account
at the layout step in the converter design.
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Fig. 7Differential mode to common mode conversion admittance
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