A Simple Through-Only De-Embedding Method
for On-Wafer S-Parameter Measurements up to 110 GHz
Hiroyuki Ito∗ and Kazuya Masu†
∗
Precision and Intelligence Laboratory, Tokyo Institute of Technology
† Integrated Research Institute, Tokyo Institute of Technology
4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503 Japan, Email: paper@lsi.pi.titech.ac.jp
Telephone: +81-45-924-5031, Fax: +81-45-924-5166
Abstract— The present paper proposes the simple de-
embedding method for 110-GHz on-wafer S-parameter mea-
surements. While conventional de-embedding methods re-
quire two or more dummy patterns, our method only uses
a through pattern and can perform accurate de-embedding
up to 110 GHz. Differences among the proposed method and
previous through-only de-embedding methods are that our
method is available for various device under tests and higher
frequencies.
Index Terms— de-embedding, mm-wave band, on-wafer
measurement, S-parameter measurement, RF CMOS
I. I NTRODUCTION
Millimeter-wave CMOS circuits have been becoming
a hot research topic today [1], [2]. Big challenges for
designers are obviously measurements and modeling of
circuit elements in mm-wave bands such as 110 GHz.
On-wafer S-parameter measurements are necessary for
characterizing on-chip devices and circuits, and one of the
reasons for difficulty of high-frequency on-wafer measure-
ments is parasitics of probing pads. A common way to
remove parasitics from measured S-parameter is pad de-
embedding. Commonly-used de-embedding methods em-
ploy open and short on-chip standards (dummy patterns).
De-embedding procedures have become increasingly more
complex for improving de-embedding accuracy [3], [4],
however this method has a limitation in an applicable
frequency [5]. The other issue is that many kinds of and a
number of dummy patterns are required in de-embedding
methods using open and short patterns [3]–[5]. Area costs
of test-CMOS-chips for evaluating device characteristics
in mm-wave bands are extremely high because these are
fabricated by using sub-100-nm CMOS processes such as a
65 nm process. A large number of de-embedding dummy-
patterns mean huge test- and design-costs.
We propose the through-only de-embedding method up
to 110 GHz for on-chip passive devices such as transmis-
sion lines, inductors, RF capacitors, resistors and so on.
Only a through dummy-pattern is required to perform de-
embedding so that area of dummy patterns is saved. Sev-
eral through-based de-embedding methods have been dis-
cussed from measurements of transmission lines [6]–[10].
A paper [11] has examined through-only de-embedding
for on-chip devices other than transmission lines, however
series parasitic resistance and inductance among probing
978-1-4244-1780-3/08/$25.00 © 2008 IEEE
pads and a device under test (DUT) degrade accuracy of
de-embedding. The issue will be described in Section III-
C. Purpose of the present paper is development of more
versatile method than previous works: wider range of
applications, wider frequency-range and smaller area.
So-called open-short and short-open de-embedding
methods and these limitations are reviewed in Section
II for clarifying difficulties of mm-wave de-embedding.
Our through-only de-embedding method is described in
Section III. Accuracy of de-embedding depends on model-
accuracy of dummy patterns such as an open, a short and
a through. As a result of evaluations of a through model
up to 110 GHz and its characteristics, the present work
applies the procedure in [12] and presents a 110-GHz
de-embedding method for various on-chip devices. It will
be shown that our method can perform very accurate de-
embedding up to 110GHz.
II. C ONVENTIONAL M ETHODS
Limitations of conventional short-open and open-short
de-embedding methods are discussed. Figure 1 shows
micrographs of short and open patterns and these con-
nections. Test patterns are fabricated by 0.18 µm CMOS
process with five metal layers. A metal is aluminum, and
a dielectric is silicon dioxide. Ground-signal-ground-type
pads are used, and pad pitches are 150 µm. A short-open-
load-through calibration using a commercial impedance
standard substrate is performed before measurements, and
calibration reference planes are at edges of probe tips.
The short-open de-embedding starts with the short cor-
150µm
150µm
G G G G
S S S S
G G G G
S S
pad pad pad pad
G G
Zshort ( Yshort ) Zopen ( Yopen )
(a) Short pattern. (b) Open pattern.
Fig. 1. Micrographs and connections of short and open patterns.
383
 G G 150µm S S S S
PAD left PAD right pad pad pad pad
S S G G G G
S S pad pad (a) Short pattern. (b) Open pattern.
G G Fig. 4. Undesired parasitic components in short and open patterns.
G G Zthru ( Ythru ) 16 pH 16 pH
S 0.55Ω 0.55Ω S
Fig. 2. A micrograph and a connection of the through (thru) pattern.
41 fF 41 fF
0
76 fF 1.0 Ω 76 fF 1.0 Ω
Magnitude of S 11 [dB]

-10 Measured data of through

(w/o de-embedding)
-20 Short-open method PAD left PAD right
-30 Fig. 5. A through model.
-40
Open-short method de-embedded S21 becomes over 0 dB. Because short and
-50
open patterns are not ideal; wires among signals and
-60 grounds in the short pattern have resistance and inductance
-70 as shown in Fig. 4, which causes over subtraction of
0 20 40 60 80 100 parasitics. Capacitance between signal pads cannot be
Frequency [GHz] neglected at high frequencies. Short and open patterns have
2 uncertainties of its parasitics, and these methods cannot
Magnitude of S 21 [dB]

Short-open method
1
0 Open-short method
-1
Measured data
-2
-3
0 20 40 60 80
Frequency [GHz]
Fig. 3. Short-open and open-short de-embedding results. The through
pattern is used for checking self-consistency.
rection as follows:
Yso = (Zmeas − Zshort )−1 − (Zopen − Zshort )−1 .
The procedure of the open-short de-embedding is
Yos = ((Ymeas − Yopen )−1 − (Yshort − Yopen )−1 )−1 ,
where Yso and Yos are Y-matrixes of the DUT de-
embedded by short-open and open-short methods, respec-
tively. Zmeas and Ymeas are Z-matrix and Y-matrix of test
circuits with pads and the DUT.
A through pattern shown in Fig. 2 is used to check
adequacy of de-embedding. The through pattern consists
of two pads, and these pads are directly connected each
other as shown Fig. 2. Self-consistency of de-embedding
can be evaluated by removing parasitics from the through
pattern as Zmeas = Zthru (Ymeas = Ythru ) in above
equations. An ideal through, i.e. no reflections and no
attenuation, remains if a de-embedding method is self-
consistent. Discrepancy between the ideal through and the
de-embedded through means a de-embedding error.
Figure 3 shows de-embedded S-parameters and mea-
sured data of the through. Magnitude of de-embedded S21
is around 0 dB below 40 GHz. However, at over 40 GHz,
be applied to high-frequency de-embedding. We propose
the de-embedding method using the through. Signals are
terminated in the opposite terminal (port), and signal prop-
agations in the through pattern seem to be controllable.
III. T HE T HROUGH -O NLY D E -E MBEDDING M ETHOD
UP TO 110 GH Z
A. An Equivalent Circuit Model of the Through
100 Accuracy of de-embedding is almost determined by
equivalent circuit models of dummy patterns. De-
embedding makes sense only if equivalent circuit models
of test and dummy patterns exactly describe real character-
istics of them. Reliability of de-embedded data is degraded
by undesirable parasitic components that are not consid-
ered in de-embedding procedures as described in Sec. II.
First, the equivalent circuit model of the through should
be discussed for performing accurate de-embedding.
Figure 5 is the equivalent circuit of the through shown
in Fig. 2, and Fig. 6 shows S-parameters of the model and
measurements. The simple through model and measured
S-parameter are well matched as shown in Fig. 6. The
through can be modeled as a π-type lumped constant
circuit because a length of a through line is less than
100 µm which is much shorter than the wave length at
110 GHz. As a length of the through line is very short,
signal pads may be capacitively-coupled each other. Signal
pads should be separated as much as possible under the
condition that the through line can be treated as a lumped
constant circuit.
B. The De-Embedding Procedure
The present work found that characteristics of the
through can be described as a π-type equivalent circuit
up to 110 GHz. We propose to apply the procedure in
[12] to 110-GHz de-embedding for various DUTs. The
procedure of the through-only de-embedding method is as

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follows. Models of the through pattern and a test pattern and impedances among the DUT and two pads have to be
with the DUT and pads are shown in Fig. 7. Y-matrix of the same.
the through is
  C. Verification of the Proposed De-embedding Method
[ ] 1 1 1
+ − Self-consistency of the proposed method is evaluated
Y11 Y12  
Ythru = =  Z1 1 Z2 1
Z2
1  . (1) by de-embedding the through, which is the same way in
Y21 Y22
− + Sec. II. Figure 8 shows de-embedded S-parameter of the
Z2 Z3 Z2 through. The maximum magnitude of S11 is -33.7 dB,
Since the through property is symmetrical, Y-matrixes of and magnitude of S21 is 0 ± 0.10 dB. Self-consistency of
left and right pads can be obtained from the proposed de-embedding method is much better than
[ ]
left Y11 − Y21 2Y21 these of short-open and open-short methods although the
Ypad =
2Y21 −2Y21 proposed method is very simple and only requires the
 1 2 2  through pattern for de-embedding.
+ − A feasibility of de-embedding for devices other than
 Z Z2 Z2 
=  1
2 
(2) transmission lines are studied from simulations, and an
2
− importance of series impedance among the DUT and pads
Z2 Z2 are also discussed. A through model, i.e. a pad model, in
and Fig. 5 is used. Pads and the DUT are connected as shown
[ ]
right −2Y12 2Y12 in Fig. 7 (a). A poly-resistor DUT-model as shown in Fig. 9
Ypad =
2Y12 Y22 − Y12 is applied, and the model consists of series resistance RL
 2 2  and shunt capacitance CL . First, circuit matrices of the
− through (Fig. 7 (b)) and a test pattern with the DUT and
 Z2 Z2 
= 
2 
′
2 1
, (3) pads (Fig. 7 (a)) are calculated. Then, RL = −1/Ydut,21
− + is extracted by removing pads from the test pattern with
Z2 Z3 Z2
the DUT and pads via our method and Mangan’s method
respectively. Then, characteristics of the DUT Tdut can [9], [11]. Values of RL and CL are changed to see de-
be de-embedded as embedding-error dependences on impedance of the DUT.
Tdut = Tleft−1
pad
right−1
· Tmeas · Tpad (4)
left−1
= Tpad · Tleft
pad · Tdut · Tright
pad · Tright−1
pad .
Conditions to succeed in our de-embedding are as S11, S22
follows. (1) The though can be modeled as a π-type equiv-
alent circuit. (2) Properties of the through are symmetrical,

0 0
Magnitude [dB]

Magnitude [dB]

S 21 0
Phase [deg.]

-10 Model -1 S 21
Measurement 60
-20 -2 S11 0.15
-30 S11 -3 120 0.10
Magnitude [dB]

S 21
-40 -4 180 0.05
0.01 0.1 1 10 100 0.01 0.1 1 10 100
Frequency [GHz] Frequency [GHz] 0
Fig. 6. S-parameters of the through pattern. Parameters are based on -0.05
measurements and a model in Fig. 5. -0.10 S 12

PAD left DUT PAD right -0.15

0 20 40 60 80 100
left right Frequency [GHz]
T pad Tdut T pad
1.0

Tmeas S 21
Phase [deg.]

(a) A test pattern with pads and a device under test (DUT).
0
PAD left PAD right Z 2 /2 Z 2 /2
left right S 12
Tpad Tpad Z1 Z3
-1.0
0 20 40 60 80 100
Tthru (Ythru ) Frequency [GHz]

(b) A through and a circuit model. Fig. 8. De-embedded results of the through pattern. The proposed
Fig. 7. Connections and a circuit model. through-only de-embedding method is applied. The maximum magnitude
of S11 is -33.7 dB.

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 10fF 20fF 0

Error (R’L -RL )/RL [%]

20 RL

Magnitude of S 11 [dB]
Measured data Short-open method
Mangan s
15 method ’
S S (w/o de-embedding)
-10 Mangan’ s
CL CL
10 method
5fF G G -20
5 C L=1fF DUT
0 -30
Proposed method
-5
0.1 1 10 100 -40 Our method
R L [Ω]
Open-short method
Fig. 9. Simulations of de-embedding errors. Signal frequency is -50
100 GHz. 0 20 40 60 80 100
Frequency [GHz]
RL is the known value, thus de-embedding errors can be
estimated from difference between RL and extracted resis- 0
Our method

Magnitude of S 21 [dB]
′ Mangan’ s method Open-short
tance RL by de-embedding. Figure 9 shows de-embedding method
-2
errors. The Mangan’s method has large errors when series
impedance among the DUT and pads becomes dominant -4
as compared to impedance of the DUT. In the simulation, Measured data
our method has no errors as shown in Fig. 9 and can be -6 Short-open
applied to devices other than transmission lines. method
Accuracy of our method is discussed from measure- -8
ments. Figure 10 shows de-embedded S-parameters of -10
an on-chip transmission line. A co-planar structure is 0 20 40 60 80 100
measured. A line width, a ground width and a space among Frequency [GHz]
a signal line and the ground are 2.0 µm, 10.0 µm and (a) S-parameters.
2.4 µm, respectively. Designed (loss less) characteristic
200
impedance is 50 Ω. A line length is 1 mm. M5 layer
(top layer) is used. S-parameters de-embedded by our
150
method and the Mangan’s method [9] are almost the same. Short-open method
|Z 0 | [Ω]

Because characteristic impedance of a measured 1-mm-

long transmission line (about 50 Ω) is larger than series 100 Open-short method
Mangan’ s method
parasitics of the pad (about 0.6 Ω) and is dominant.
Measurement results indicate that our method can achieve 50
EM simulation
the same accuracy as [9] when series impedance of the Measured data Our method
pad is smaller than DUT impedance. 0
0 20 40 60 80 100
IV. C ONCLUSION
Frequency [GHz]
We proposed the through-only de-embedding method
(b) Characteristic impedance.
for 110 GHz S-parameter measurements. The through pat-
Fig. 10. Comparisons of de-embedded characteristics. Ripple around
tern can be modeled as a π-type lumped constant circuit up 60 GHz is due to equipment issues.
to 110 GHz. The proposed method is not merely applicable
to transmission lines but other passive devices such as poly [4] T. E. Kolding, IEEE Trans. Electron Devices, vol. 47, no. 4, pp.
resistors on the condition that a π-type through model is 734–740, Apr. 2000.
[5] X. Wei, et al., IEEE Trans. on Electron Devices, Vol. 54, No. 10,
valid. Simulation and measurement results showed that our pp. 2706–2714, Oct. 2007.
methods have better self-consistency and higher accuracy [6] Y. Tretiakov, et al., 63rd ARFTG Conference Digest Spring, 2004,
than conventional methods although our method only uses pp. 69–72.
[7] T. Zwick, et al. IEEE Microwave and Wireless Components Letters,
one through pattern. Vol. 15, No. 2, pp. 65–67, Feb 2005.
ACKNOWLEDGMENT [8] J. Song, et al., in Proc. IEEE Meeting Electrical Performance
Electronic Packaging, 2001, pp. 129–132.
This work was partially supported by MEXT. KAKENHI,
[9] A. M. Mangan, et al., IEEE Trans. on Electron Devices, vol. 53,
JSPS. KAKENHI, STARC, MIC. SCOPE, Intel and VDEC in collab-
no. 2, pp. 235–241, Feb. 2006.
oration with Cadence Design Systems, Inc., and Agilent Technologies
[10] Y. Tretiakov, et al., in Proc. of IEEE International Interconnect
Japan, Ltd.
Technology Conference, 2004, pp. 166–168.
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