2 7 TUNNEL DIODE

Principle

Tiunoel diode works on h

the
e p
principle f funnellng efect, n
oss the
dhe
eyos
enery eneroy
barrier even wilh
lesser energy thon the wn
charge
wrTs
burrner l
ehantcal The preifability of fuuinelling tncreases with the polea
u r r e r eie/KY decreosin a
5ymbol

The symbol of a unnel diode is as shown in fig 2.42.

Ande Catbode

Fig 242
Theory
A tunnel diode alio called as Esaki diole is formed using p andn material
withheavy doping say 10X0 mes larger than the conventional p-njunction diod

Due to heay doping, the potential decreases drastically. in turn will he

harrier
the charge carniers lo Culy tunnel the junctions, quantum mechanically,

V-ICharacteristics
The diode 1s forward biased as shown in fig
2.43
When the forward biasing volage is
increased the electrons from the n-Tegion unnel
ito the potential barrier and rcaches the p-region

current inereases rapidly due

Therefore the
o tunnelling efeet and reaches the peak poit
Vas shown in fig 2.44 and this current, is called V

prak current U). The voltage at which the diode Fig. 2.43
raches peak current is called peak volage 0
Now when the applied voltage is further increased, the tunnelhing e
decreases as most of the electrons would have exhausted in tunneling proc
Therefore the current decreuses and reaches the valley point as shown in Jig 2

This minimum current is called valley current U) and the correspond

ollage is called valley voliage (V). This region is called negative resista
egon
 Futti t e ytod vilag ad hepond th
hehaves a a rmal diode as ahoven he
th l di
vel ey pls
w0

, iliags (V)
Fie 144

The current in tonnet dioe is dae to 5eomponients vl

) Tonnelling .currem (/)

() Diode curent 4)

and (ay Excess curent ()

ATotal curt ToalIy+ h* l

Advantages
low
Costand noise is

2Fabrication is very sinplo

Operation speed is very high

4 Power diasipation 1s low andd hence t 1s environmental friendly
drve
Disadvantoges
Since it is a two terminal device, it is difficult to solate the ingu al

2 It is a low sutput swing devICE

 2.55
Applications
both positive resistance [From point O to Pl and
1 As tunnel diode has P to Vi. it has many applications in the
negative resistance TFrom point
switching devices.
diodes also.
2. It can used as normal
microwave oscillators.
3 They are used as high trequency
resistance region, then it N
under negative
4. When tunnel diode is operated
oscillator (or) a switch.
can be used as an
2.28 SCHOTTKY DIODE