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BUX48A
Features
■ NPN transistors
■ High voltage capability
■ High current capability
( s )
ct
■ Fast switching speed
Applications 1
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■ Switching mode power supplies
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2
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■ Flyback and forward single transistor low power
e P TO-3
converters
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Figure 1. e t
Internal schematic diagram
Description
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The BUX48 and BUX48A are multi epitaxial mesa
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NPN transistors mounted in TO-3 metal can.
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They are intended for switching and industrial-
t (s
applications for single and three-phase mains.
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Table 1. Device summary
Order code Marking Package Packaging
e P 4 A
IBM
PTOT
Base peak current non repetitive (tp < 20 µs)
Total dissipation at Tc = 25 °C
l e t 20
175 W
A
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du
Rthj-case Thermal resistance junction-case __max 1 °C/W
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BUX48 BUX48A Electrical characteristics
2 Electrical characteristics
(s)
(R BE = 10Ω) VCE = rated VCER, Tc = 125°C 4 mA
IEBO
Emitter cut-off current
VEB = 5 V
c t 1 mA
u
(IC = 0)
Collector-emitter IC = 200 mA
o d
VCEO(sus)(1) sustaining voltage
(IB = 0)
for BUX48
for BUX48A
P r400
450
V
V
Emitter-base voltage
e t e
VEBO
(IC = 0)
IE = 50 mA
o l 7 30 V
s
for BUX48
b
IC = 10 A IB = 2 A V
O 1.5
)-
IC = 15 A IB = 4 A 3.5 V
(1) Collector-emitter
VCE(sat) IC = 15 A IB = 3 A 5 V
saturation voltage
t ( s for BUX48A
u c IC = 8 A IB = 1.6 A 1.5 V
o d IC = 12 A IB = 2.4 A 5 V
Pr
for BUX48
Base-emitter saturation IC = 10 A IB = 2 A 1.6 V
VBE(sat)(1)
o l IC = 8 A IB = 1.6 A 1.6 V
b s
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Electrical characteristics BUX48 BUX48A
for BUX48
Resistive load VCC = 150 V IC = 10 A
ton Turn-on time IB1 = -IB2 = 2 A 1 µs
ts Storage time for BUX48A 3 µs
tf Fall time VCC = 150 V IC = 8 A 0.8 µs
IB1 = -IB2 = 1.6 A
for BUX48
Inductive load VCC = 300 V IC = 10 A
ts
tf
Storage time
Fall time
VBE = -5 V IB1 = 2 A
2.7
0.16
( s )µs
µs
ct
LB = 3 µH
Inductive load
for BUX48
VCC = 300 V IC = 10 A
d u
ts
o
Pr
Storage time 5 µs
VBE = -5 V IB1 = 2 A
tf Fall time 0.4 µs
LB = 3 µH TC = 125 oC
for BUX48A
e t e
ol
Inductive load VCC = 300 V IC = 8 A
ts
tf
Storage time
Fall time
b s
VBE = -5 V
LB = 3 µH
IB1 = 1.6 A
3
0.13
µs
µs
O
)-
for BUX48A
Inductive load VCC = 300 V IC = 8 A
ts Storage time
t ( s VBE = -5 V IB1 = 1.6 A
5 µs
tf Fall time
u c LB = 3 µH T C = 125 oC
0.4 µs
o d
1. Pulsed duration = 300 ms, duty cycle ≤2%.
P r
2.1
t
Test
e e circuits
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BUX48 BUX48A Electrical characteristics
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Package mechanical data BUX48 BUX48A
( s )
u ct
o d
P r
e t e
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(s )
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BUX48 BUX48A Package mechanical data
mm.
DIM.
min. typ max.
A 11.00 13.10
B 0.97 1.15
C 1.50 1.65
( s )
ct
D 8.32 8.92
G
19.00
10.70
20.00
d
11.10 u
o
Pr
N 16.50 17.20
e
P 25.00 26.00
R 4.00
e t 4.09
U 38.50
s ol 39.30
V 30.00
O b 30.30
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Revision history BUX48 BUX48A
4 Revision history
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uct
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P r
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BUX48 BUX48A
( s )
u ct
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
All ST products are sold pursuant to ST’s terms and conditions of sale.
P r
t e
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e
o l
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third party products or services or any intellectual property contained therein.
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(s )
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