RIZAL TECHNOLOGICAL UNIVERSITY

COLLEGE OF ENGINEERING, ARCHITECTURE AND TECHNOLOGY Boni

Avenue, Mandaluyong City

DEPARTMENT OF ELECTRONICS ENGINEERING AND TECHNOLOGY Second

Semester, School Year 2019-2020

INDUSTRIAL ELECTRONIC COMPONENTS AND THEIR SYMBOLS

EXPERIMENT TITLE

Experiment Number 1

Name : BARON,TEODULO III C.___ Room/Building : _______________________

Course/Year : BSECE/ 3RD YEAR_________Date Performed : _______________________
Subject :ECE03LAB______________ Date Submitted: _______________________
Day/Time :3:00pm-4:30pm/ THS Instructor :MR. MARTINEZ

Status heck Evaluation Criteria Poor Fair Good Excellent

C
Advance Reasoning

Accuracy

On Time Completeness

Analytical Ability

Late Neatness of Work

Remarks :

____________________________________________________
________________________________ Rating Signature _

Date

1-GNR

Experiment Number One

INDUSTRIAL ELECTRONIC COMPONENTS AND THEIR SYMBOLS

OBJECTIVES:

1. To identify electrical and electronic components from their physical appearance.

2. To be able to draw the circuit symbol for each of these components.

3. To give a physical description, electrical characteristics and applications. for each of

these components.

COMPONENTS:

1. Rectifier Diode 8. NPN Transistor

2. Semiconductor Diode 9. PNP Transistor

3. Silicon-Controlled Rectifier 10. Diac

4. Uni-junction Transistor 11. Triac

5. P-JFET 12. N-JFET

6. MOSFET 13. Sensors

7. Micro-controllers 14. Relays

PROCEDURES:

1. Study, then briefly describe in Table 1 the physical feature of the components listed.

2. Draw the circuit symbol for each part and label them appropriately.

3. Give a brief electrical description of the component including characteristic graph and

ratings if possible.

4. Look for an example part no. of each component (ex. Rectifier Diode –

1N4001, NPN transistor – NA 51).

5. Look for the data sheet of the selected part no.

6. Familiarized the data sheet by identifying packaging with package no. and lead coding,

features, application and maximum rating.

7. Study, then briefly describe in Table 2 the physical feature of the components listed

8. In describing the component, give its shape, size and characteristic markings and

facilities for mounting.

 Table 1

Components Symbol Description Electrical Characteristics

A rectifier is a
special type of
diode that
Rectifier converts
Diode alternating
current (AC)
into direct
current (DC).

Semiconducto
r diodes can
be defined as
diodes that
are made up
Semiconduct of
or Diode semiconductin
g materials
(typically, the
metals silicon
and
germanium
are used in
them)
 A silicon
controlled
rectifier or
semiconducto
Silicon- r controlled
Controlled rectifier is a
Rectifier four-layer
solid-state
current-
controlling
device.
A unijunction
transistor is a
three-lead
electronic
semiconducto
Uni-junction r device with
Transistor only one
junction that
acts
exclusively as
an electrically
controlled
switch.
The junction-
gate field-
effect
transistor is
one of the
simplest types
of field-effect
transistor.
JFETs are
P-JFET three-terminal
semiconducto
r devices that
can be used as
electronically
controlled
switches or
resistors, or to
build
amplifiers
 MOSFET The metal–
oxide–
semiconducto
r field-effect
transistor, also
known as the
metal–oxide–
silicon
transistor, is a
type of
insulated-gate
field-effect
transistor that
is fabricated
by the
controlled
oxidation of a
semiconducto
r, typically
silicon.
Microcontroll
er is a
compressed
micro-
computer
manufactured
to control the
functions of
Micro- embedded
controllers systems in
office
machines,
robots, home
appliances,
motor
vehicles, and a
number of
other gadgets.
 NPN
transistors are
a type of
bipolar
transistor with
three layers
NPN that are used
Transistor for signal
amplification.
It is a device
that is
controlled by
the current.
The PNP
transistor is a
type of
transistor in
which one n-
PNP type material
Transistor is doped with
two p-type
materials. It is
a device that
is controlled
by the
current. Both
the emitter
and collector
currents were
controlled by
the small
amount of
base current.
Two crystal
diodes are
connected
back-to-back
in the PNP
transistor.
 The DIAC
(diode for
alternating
current) is a
diode that
conducts
electrical
current only
after its break
over voltage,
VBO, has been
reached
momentarily. .
Diac .. DIACs have
no gate or
trigger
electrode,
unlike some
other
thyristors that
they are
commonly
used to
trigger, such
as TRIACs.
A TRIAC is a
three terminal
electronic
component
Triac that conducts
current in
either
direction
when
triggered. The
term TRIAC is
a genericized
trademark.
TRIACs are a
subset of
thyristors and
are related to
silicon
controlled
rectifiers
 A N-Channel
JFET is a JFET
whose channel
is composed of
primarily
electrons as the
charge carrier.
This means that
N-JFET when the
transistor is
turned on, it is
primarily the
movement of
electrons which
constitutes the
current flow.
A sensor is a
device that
measures
physical input
from its
environment
and converts
it into data
that can be
interpreted by
either a
Sensors human or a
machine.
Most sensors
are electronic
(the data is
converted into
electronic
data), but
some are
more simple,
such as a glass
thermometer,
which
presents
visual data.
 Relays are
electrically
operated
switches that
open and
close the
circuits by
receiving
electrical
signals from
outside
sources. ...
The “relays”
Relays embedded in
electrical
products work
in a similar
way; they
receive an
electrical
signal and
send the
signal to other
equipment by
turning the
switch on and
off.

Table 2

Packaging with
Maximum
Components Part No. no. and lead Features Applications
Rating
coding
 Rectifier 1N4004 Average forward current is Can be used to Maximum
Diode 1A prevent reverse current
Non-repetitive Peak current polarity problem carrying
is 30A Half Wave and capacity is
Reverse current is 5uA. Full Wave 1A it
RMS reverse voltage is 280V rectifiers withstands
Peak repetitive Reverse Used as a peaks up to
voltage is 400V protection device 30A with
Available in DO-41 Package Current flow peak
regulators inverse
voltage of
400V.

Semiconduct 1N4148 Fast switching Diode Can be used to Maximum

or Diode Peak repetitive Reverse prevent reverse Reverse
voltage is 100V polarity problem Voltage:
RMS reverse voltage is 75V Protect Power 75V
Peak forward surge current is electronic Maximum
2A switches that are forward
Forward continuous current operating with continuous
If 300mA high switching current:
Reverse recovery time 8ns frequency. 300 mA
Available in DO-35 Package Half Wave and
Full Wave
rectifiers
Used as a
protection device
Current flow
regulators

Silicon- 2N2324 Solid State Thyristor – Silicon Power electronic Peak

Controlled Controlled Rectifier (SCR) switching devices positive
Rectifier Forward Voltage: 100V Motor controllers anode
On-State Current: 1.6A (RMS) Over Voltage voltage:
Peak Surge current: 15A max protection circuits 500V
Gate Voltage: 6V Electronic Fuse Peak
Gate threshold current: circuits positive
200uA High current gate
Available in To-39 Metal can protection circuits current: 0.1
Package Surge protection A
circuits
Inverters/Convert
er circuits
Uni-junction 2N2646 Available as “HR” (high General purpose Maximum
Transistor reliability) industrial voltage
Available as non-RoHS (Sn/Pb applications between
plating) SCR firing circuits two bases
Low emitter reverse current: Hobby projects (VB2B1):
0.005µA (Typ) Phase control 35V
PASSIVATED surface for circuit Maximum
reliability and uniformity Saw tooth wave emitter
Maximum voltage between generator reverse
two bases (VB2B1): 35V Timing circuit voltage
Operating temperature Voltage detector (VB2E): 30V
range: -65ºC to +150ºC Relaxation Maximum
oscillator RMS
emitter
current (Ie):
50mA
Maximum
peak
emitter
current (Ie):
2A
Maximum
power
dissipation :
300mW
P-JFET 2N5460 Gate–Source Breakdown This device Maximum
Voltage: 40Vdc 2N5460 is Power
Gate Reverse Current: 5nAdc designed Dissipation
Gate–Source Cutoff Voltage: primarily for low (Pd): 0.35
0.75Vdc-6Vdc level Audio and W
Gate–Source Voltage: 0.5Vdc- general-purpose
4Vdc applications with Maximum
Zero–Gate–Voltage Drain high impedance Drain-
Current -1 - -5mAdc signal sources Source
Forward Transfer Voltage |
Admittance: 1K-4k umhos Vds|: 40 V
Output Admittance: 75
umhos Maximum
Input Capacitance: 5pF Gate-
Reverse Transfer Capacitanc: Source
1pF Voltage |
Vgs|: 4 V

Maximum
Drain
Current |
Id|: 0.005 A
MOSFET IRF730 IRF730 N - CHANNEL 400V - Telecommunicati Maximum
 0.75 Ω - 5.5A - TO-220 on applications Power
PowerMESH™ MOSFET TYP E Dissipation
IRF730 s s s s s V DSS 400 V R High voltage (Pd): 100 W
DS(o n) < 1Ω ID 5.5 A TYPICAL applications
RDS(on) = 0.75 Ω EXTREMELY Maximum
HIGH dv/dt CAPABILIT Y 100% Relay driving Drain-
AVALANCHE TESTED VERY applications Source
LOW INTRIN SIC Voltage |
CAPACITANCES GATE Battery Chargers Vds|: 400 V
CHARGE MINIMIZED and BMS Circuits
DESCRIPTION This power Maximum
MOSFET is desig ned using Uninterrupted Gate-
the company’s consolidated power supplies Source
strip layout-based MESH Voltage |
OVERL Motor Drivers Vgs|: 20 V

Maximum
Gate-
Threshold
Voltage |
Vgs(th)|: 4
V

Maximum
Drain
Current |
Id|: 5.5 A
Micro- LM741 LM741 has only one op-amp Comparators Maximum
controllers inside, there are some op- DC Amplifiers supply
amp IC’s having more than Integrator or voltage: +-
one op-amp like LM358, Differentiators 22V
LM148, LM248, LM348 Summing Maximum
Provided with short circuit Amplifiers input
and overload protection. Multi-vibrators voltage: +-
Low power consumption. Active Filters 15V
Large common mode General feedback
rejection ratio (CMRR) and applications
differential voltage ranges.
No external frequency
compensation is required.
Prevent from latch-up when
common-mode range is
exceeded.
Minimum, normal and
maximum Power
Consumption for this IC is
±10v, ±15v and ±22v
respectively.
 Operating temperature
should be -50 to 125 ˚C.
Supply current – 1.7 to
2.8mA.
Soldering pin temperature –
PDIP package - 260 ˚C (for 10
seconds – prescribed)
TO-99 and CDIP - 300 ˚C (for
10 seconds – prescribed)
Available packages: TO-99,
CDIP & PDIP
NPN 2N5089 Collector-Emitter Maximum
Transistor voltage(VCEO) : 25 Volts Switching Collector
Collector-Base voltage(VCBO) circuits Power
: 30 Volts Modulati Dissipation
Emitter-Base voltage(VEBO) : on of signals (Pc): 0.31
3.0 Volts Low noise W
Power Dissipation (PD) : 625 amplification
mW at TA=250C systems Maximum
Continuous Collector Current High AF Collector-
(IC) : 50 mA systems Base
DC Current Gain (VCE=5.0 Push-pull Voltage |
Volts,IC=100 uA) : 400-1200 circuits Vcb|: 30 V
CurrentGain Temperat
BandwidthProduct ure sensing Maximum
(VCE=5.0Volts,IC=500uA,f=20 systems Collector-
MHz) : 50MHz Emitter
Small-Signal Current Gain Voltage |
(VCE=5.0 Volts,IC=1.0 Vce|: 25 V
mA,f=1.0 kHz) : 450-1800
Maximum
Emitter-
Base
Voltage |
Veb|: 3 V

Maximum
Collector
Current |Ic
max|: 0.05
A

Max.
Operating
Junction
Temperatur
e (Tj): 135
°C
 PNP TIP36CW TIP35CW TIP36CW General purpose Maximum
Transistor Complementary power tran Audio amplifier Collector
sistors Features Low Power
collector-emi tter saturation Dissipation
voltage Complementa ry (Pc): 125 W
NPN - PNP transistors
Applications General purpose Maximum
Audio amplifier Description Collector-
The devices are manufacture Base
d in planar technology with Voltage |
“base isl and” layout. The Vcb|: 100 V
resulting transistor s show
exceptional high gain Maximum
performanc e coupled with Collector-
very low satura. Emitter
Voltage |
Vce|: 100 V

Maximum
Emitter-
Base
Voltage |
Veb|: 5 V

Maximum
Collector
Current |Ic
max|: 25 A

Max.
Operating
Junction
Temperatur
e (Tj): 150
°C
Diac DB3 DB3 DIAC FEATURES VBO : Functioning as a ITRM
32V and 40V LOW trigger diode with Repetitive
BREAKOVER CURRENT DO-35 a fixed peak on-
DESCRIPTION (DB3 and DB4) voltagereference, state
Functioning as a trigger diode the DB3 can be current, tp
with a fixed voltage used in = 20 µs, F =
reference, the DB3/DB4 conjunctionwith 120 Hz
series can be used in triacs for SMDB3
conjunction with triacs for simplified gate 1.00 ADB3 /
simplified gate control control circuits or DB4 2.00
circuits or as a starting asa starting ATstg
element in fluorenscent 2 element in fl Storage
lamp ballasts. 3 A new uorescent lamp junction
 surface mount version is now ballasts temperatur
available in 1 SOT-23 e range -40
package, providing reduced to +125
space and compatibility with °CTjOperati
automatic pick and place ng junction
SOT-23 equipment. (SMDB3)* temperatur
Pi e range -40
to +125 °C
Triac BTA08- BTA08, BTB08, T810, T835, in applications Maximum
600C T850 Snubberle ss™, logic such as static repetitive
level and standard 8 A Tri acs relays, heating peak and
Datasheet - production data regulation, off-state
Feature s On-state rms induction motor voltage
current, IT(RMS) 8 A R starting circuits... (VDRM):
epetitive peak off-state or for phase 600 V
voltage, VDRM / VRRM 600 V control operation
to 800 V Triggering gate in light dimmers, Maximum
current, IGT (Q1) 5 to 50 mA motor speed RMS on-
Descriptio n Available either controllers,... state
in through-hole and current
surfacemount packages, (IT(RMS)): 8
these devices ar e suitable for A
gener..
Non
repetitive
surge peak
on-state
current
(ITSM): 80
A

Maximum
operating
junction
and storage
temperatur
e range
(Tstg,
Tj): ..110 °C
N-JFET 2N547 • General Purpose N-  Amplifier Maximum
Channel Junction Field Effect circuits Collector
Transistor.  Pre-Amp Power
• Drain-Source voltage applications Dissipation
(VDS) is 25 V.  Audio (Pc): 5 W
• Maximum Drain noise
current: 5mA. cancelation Maximum
• Drain-Gate voltage Collector-
(VDG) is 25V. Base
• Gate-Source Voltage Voltage |
(VGS) is 25V. Vcb|: 60 V
• Continuous Gate
Current (IG) is 10mA. Maximum
• Available in To-92 Collector-
and SOT54 Package. Emitter
Voltage |
Vce|: 60 V

Maximum
Emitter-
Base
Voltage |
Veb|: 6 V

Maximum
Collector
Current |Ic
max|: 0.5 A

Max.
Operating
Junction
Temperatur
e (Tj): 200
°C

Transition
Frequency
(ft): 4 MHz

Collector
Capacitanc
e (Cc): 100
pF

Forward
Current
Transfer
 Ratio (hFE),
MIN: 20
Sensors TMP36  Operate on low  Environ Supply
voltage mental Voltage 7 V
 10 mV/°C scale control Shutdown
factor systems Pin GND ≤
SHUTDOW
 ±2°C Temperature  Thermal
N ≤ +VS
accuracy protection Output Pin
 ±0.5°C linearity  Industria GND ≤
 External Calibration l process VOUT ≤ +VS
not required control Operating
 Stable with large  Fire Temperatur
capacitive loads alarms e Range
 Specified −40°C to  Power −55°C to
+125°C, operation to system +150°C Die
monitors Junction
+150°C
Temperatur
 Less than 50 µA  CPU
e 175°C
quiescent current thermal Storage
 Auto Shutdown management Temperatur
current 0.5 µA max e Range
 Low self-heating −65°C to
Qualified for automotive +160°C IR
applications Reflow
Soldering
Peak
Temperatur
e 220°C
(0°C/5°C)
Time at
Peak
Temperatur
e Range 10
sec to 20
sec Ramp-
Up Rate
3°C/sec
Ramp-
Down Rate
−6°C/sec
Time 25°C
to Peak
Temperatur
e 6 min IR
Reflow
Soldering—
Pb-Free
 Package
Peak
Temperatur
e 260°C
(0°C) Time
at Peak
Temperatur
e Range 20
sec to 40
sec Ramp-
Up Rate
3°C/sec
Ramp-
Down Rate
−6°C/sec
Time 25°C
to Peak
Temperatur
e 8 min
Relays AEP1701 High DC voltage, high-current High DC voltage, Max.
2 control capable 1,000 V DC high-current switching
switching and cut-off has control capable current 10
been achieved Compact and 1,000 V DC A DC
low operating sound Capsule switching and cut- continuity
contact mechanism Free from off has been (2 mm2
outside influence, high achieved Wire) 15 A
contact reliability, superior Compact and low DC 3 min (2
safety, and arc space operating sound mm2 Wire)
unnecessary Mounting Capsule contact 30 A DC 30
direction is not specified mechanism Free s (2 mm2
from outside Wire)
influence, high Max.
contact reliability, switching
superior safety, current 10
and arc space A DC
unnecessary continuity
Mounting (2 mm2
direction is not Wire) 15 A
specified DC 3 min (2
mm2 Wire)
30 A DC 30
s (2 mm2
Wire)
Max.
switching
voltage
1,000V DC