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AO4433 P-Channel Enhancement Mode Field Effect Transistor: Features General Description
AO4433 P-Channel Enhancement Mode Field Effect Transistor: Features General Description
ESD PROTECTED!
100% UIS Tested
100% Rg Tested
SOIC-8
D
D
G S
Thermal Characteristics
Parameter Symbol Typ Max Units
AF
Maximum Junction-to-Ambient t ≤ 10s 28 40 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State 54 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 21 30 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 25
-10V
-5V VDS=-5V
20
-6V
125°C
20
15
-ID (A)
-ID(A)
-4.5V
10
10
25°C
VGS=-4V 5
0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
40 1.6
VGS=-5V VGS=-10V
Normalized On-Resistance
30 ID=-10A
1.4
RDS(ON) (mΩ)
VGS=-10V VGS=-20V
20
1.2 ID=-11A
VGS=-5V
10 ID=-5A
1
VGS=-20V
0
0 5 10 15 20 25 0.8
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Temperature (°C)
Gate Voltage Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
50
ID=-11A
1.0E+00
40
1.0E-01
125°C
RDS(ON) (mΩ)
30 1.0E-02
-IS (A)
125°C 1.0E-03
20
1.0E-04
25°C
10 1.0E-05
25°C
1.0E-06
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 5 10 15 20
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
10 2500
VDS=-15V
Ciss
ID=-11A
8 2000
Capacitance (pF)
-VGS (Volts)
6 1500
4 1000
Coss Crss
2 500
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000
100.0
RDS(ON) 10µs
100µs TJ(Max)=150°C
limited TA=25°C
1ms
10.0
100
-ID (Amps)
10ms
0.1s
Power (W)
1.0 1s
10
TJ(Max)=150°C 10s
TA=25°C
DC
0.1
0.1 1 10 100
1
-VDS (Volts)
0.00001 0.001 0.1 10 1000
Figure 9: Maximum Forward Biased Safe Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=75°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Ig
C harg
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 9
Rg
+
Vgs 1
Vds
Id Vds
- B
Vgs
Vgs VDC
Vdd
Rg
+ Id
IA
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs