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Irf 7416 PBF
Irf 7416 PBF
IRF7416PbF
l Generation V Technology HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel Mosfet 1 8
A
S D
l Surface Mount
2 7 VDSS = -30V
l Available in Tape & Reel S D
l Lead-Free
G 5
D RDS(on) = 0.02Ω
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06/29/11
IRF7416PbF
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.020 VGS = -10V, ID = -5.6A f
RDS(on) Static Drain-to-Source On-Resistance
––– ––– 0.035
Ω
VGS = -4.5V, ID = -2.8A f
VGS(th) Gate Threshold Voltage -1.0 ––– -2.04 V VDS = VGS, ID = -250μA
gfs Forward Transconductance 5.6 ––– ––– S VDS = -10V, ID = -2.8A
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 VDS = -24V, VGS = 0V
μA
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 61 92 ID = -5.6A
Qgs Gate-to-Source Charge ––– 8.0 12 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 & 9 f
td(on) Turn-On Delay Time ––– 18 ––– VDD = -15V
tr Rise Time ––– 49 ––– ID = -5.6A
ns
td(off) Turn-Off Delay Time ––– 59 ––– RG = 6.2Ω
tf Fall Time ––– 60 ––– RD = 2.7Ω, See Fig. 10 f
Ciss Input Capacitance ––– 1700 ––– VGS = 0V
Coss Output Capacitance ––– 890 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 410 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V e
trr Reverse Recovery Time ––– 56 85 ns TJ = 25°C,IF = -5.6A
Qrr Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/μs e
Notes:
Repetitive rating; pulse width limited by ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) T J ≤ 150°C
Starting TJ = 25°C, L = 25mH Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.6A. (See Figure 12)
Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7416PbF
100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V - 5.5V
- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V
10 10
-3.0V
-3.0V
100 2.0
I D = -5.6A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)
TJ = 25°C 1.5
TJ = 150°C
(Normalized)
10 1.0
0.5
VDS = -10V
20μs PULSE WIDTH VGS = -10V
1 0.0 A
A
3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
4000 20
V GS = 0V, f = 1MHz I D = -5.6A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss 12
2000 Coss
1000 Crss
4
100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)
100us
TJ = 150°C
10 10
TJ = 25°C
1ms
TA = 25 °C 10ms
TJ = 150 ° C
VGS = 0V
Single Pulse
1 A 1
0.1 1 10 100
0.4 0.6 0.8 1.0 1.2
-VDS , Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
D.U.T. +VDS
VGS
90%
-3mA
VDS
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
10 0.20
0.10
0.05
0.02 PDM
1
0.01 t1
SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
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IRF7416PbF
1000
ID
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS 0
25 50 75 100 125 150
Starting TJ , Junction Temperature (o C)
tp
V(BR)DSS
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IRF7416PbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
**
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" *
VDD
-
• D.U.T. - Device Under Test
VGS*
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD]
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IRF7416PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMETERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°
e1 K x 45°
A
C y
0.10 [.004]
8X b A1 8X L 8X c
0.25 [.010] C A B 7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
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IRF7416PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2011
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event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) . contact your nearest Infineon Technologies office
(www.infineon.com).
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respect to such application.
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