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PD - 97006

IRF6645
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide 
VDSS VGS RDS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible  100V max ±20V max 28mΩ@ 10V
l Ultra Low Package Inductance Qg tot Qgd Vgs(th)
l Optimized for High Frequency Switching 
14nC 4.8nC 4.0V
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 

DirectFET™ ISOMETRIC
SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP MZ MN
Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e 5.7
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e 4.5 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f 25
IDM Pulsed Drain Current g 45
EAS Single Pulse Avalanche Energy h 29 mJ
IAR Avalanche Current g 3.4 A
80 12
VGS, Gate-to-Source Voltage (V)

ID = 3.4A ID= 3.4A VDS = 80V

70 10 VDS= 50V
Typical R DS (on) (mΩ)

60 8
TJ = 125°C
50 6

40 4
TJ = 25°C
30 2

20 0
4 6 8 10 12 14 16 0 4 8 12 16
VGS, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper. „ TC measured with thermocouple mounted to top (Drain) of part.
‚ Click on this section to link to the DirectFET Website. … Repetitive rating; pulse width limited by max. junction temperature.
ƒ Surface mounted on 1 in. square Cu board, steady state. † Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 3.4A.
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IRF6645
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 28 35 mΩ VGS = 10V, ID = 5.7A c
VGS(th) Gate Threshold Voltage 3.0 ––– 4.9 V VDS = VGS, ID = 50µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 7.4 ––– ––– S VDS = 10V, ID = 3.4A
Qg Total Gate Charge ––– 14 20
Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.1 ––– VDS = 50V
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.8 ––– nC VGS = 10V
Qgd Gate-to-Drain Charge ––– 4.8 7.2 ID = 3.4A
Qgodr Gate Charge Overdrive ––– 5.3 ––– See Fig. 15
Qsw Switch Charge (Qgs2 + Qgd) ––– 5.6 –––
Qoss Output Charge ––– 7.2 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 1.0 ––– Ω
td(on) Turn-On Delay Time ––– 9.2 ––– VDD = 50V, VGS = 10Vc
tr Rise Time ––– 5.0 ––– ID = 3.4A
td(off) Turn-Off Delay Time ––– 18 ––– ns RG=6.2Ω
tf Fall Time ––– 5.1 –––
Ciss Input Capacitance ––– 890 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 40 ––– ƒ = 1.0MHz
Coss Output Capacitance ––– 870 ––– VGS = 0V, VDS = 1.0V, f=1.0MHz
Coss Output Capacitance ––– 100 ––– VGS = 0V, VDS = 80V, f=1.0MHz

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 25 MOSFET symbol D

(Body Diode) A showing the

G
ISM Pulsed Source Current ––– ––– 45 integral reverse
S
(Body Diode)d p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.4A, VGS = 0V c
trr Reverse Recovery Time ––– 31 47 ns TJ = 25°C, IF = 3.4A, VDD = 50V
Qrr Reverse Recovery Charge ––– 40 60 nC di/dt = 100A/µs c

Notes:
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
‚ Repetitive rating; pulse width limited by max. junction temperature.

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 IRF6645
Absolute Maximum Ratings
Parameter Max. Units
PD @TA = 25°C Power Dissipation c 3.0 W
PD @TA = 70°C Power Dissipation c 1.4
PD @TC = 25°C Power Dissipation f 42
TP Peak Soldering Temperature 270 °C
TJ Operating Junction and -40 to + 150
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJA Junction-to-Ambient cg ––– 58
RθJA Junction-to-Ambient dg 12.5 –––
RθJA Junction-to-Ambient eg 20 ––– °C/W
RθJC Junction-to-Case fg ––– 3.0
RθJ-PCB Junction-to-PCB Mounted 1.0 –––
100

D = 0.50
Thermal Response ( Z thJA )

10 0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1 R2 R3 R4 R5
0.02 R1 R2 R3 R4 R5 0.6677 0.000066
1 τJ τAC
0.01 τJ τ
C
1.0463 0.000896
τ1 τ2 τ3 τ4 τ5
τ1 τ2 τ3 τ4 τ5 1.5612 0.004386
Ci= τi/Ri 29.2822 0.686180
Ci= τi/Ri
0.1 25.4550 32
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = Pdm x Zthja + Ta
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

Notes:
 Surface mounted on 1 in. square Cu, steady state. „ TC measured with thermocouple incontact with top (Drain) of part.
‚ Used double sided cooling , mounting pad. … Rθ is measured at TJ of approximately 90°C.
ƒ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.

 Surface mounted on 1 in. square Cu ƒ Mounted to a PCB with ƒ Mounted on minimum

board (still air). small clip heatsink (still air) footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6645
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
BOTTOM 6.0V BOTTOM 6.0V

10

10
6.0V
6.0V
1

≤60µs PULSE WIDTH ≤60µs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics Fig 5. Typical Output Characteristics

100 2.0
VDS = 10V ID = 5.7A
≤60µs PULSE WIDTH VGS = 10V
ID, Drain-to-Source Current (Α)

Typical RDS(on) (Normalized)

10 1.5
TJ = 150°C
TJ = 25°C
TJ = -40°C

1
1.0

0.1
4.0 5.0 6.0 7.0 8.0 0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature

10000 60
VGS = 0V, f = 1 MHZ
TA= 25°C
Ciss = Cgs + Cgd, Cds SHORTED
VGS = 7.0V
Crss = Cgd
VGS = 8.0V
Coss = Cds + Cgd
50 VGS = 10V
(mΩ)
C, Capacitance(pF)

1000 Ciss VGS = 15V

DS(on)

Coss 40
Typical R

100
Crss
30

10 20
1 10 100 0 10 20 30 40 50

VDS , Drain-to-Source Voltage (V) ID, Drain Current (A)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance vs. Drain Current

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 IRF6645
100.0 1000

OPERATION IN THIS AREA

TJ = 150°C LIMITED BY R DS (on)

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

TJ = 25°C 100
TJ = -40°C
10.0
100µsec
10

1.0 1msec
1
TA = 25°C
Tj = 150°C 10msec
VGS = 0V Single Pulse
0.1 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10.0 100.0 1000.0

VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area

6.0 6.0

5.5
VGS(th) Gate threshold Voltage (V)
5.0
5.0
ID , Drain Current (A)

4.0
4.5

3.0 4.0 ID = 1.0A

ID = 1.0mA
3.5
2.0 ID = 250µA
3.0 ID = 50µA
1.0
2.5

0.0 2.0
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

TJ , Ambient Temperature (°C) TJ , Temperature ( °C )

Fig 12. Maximum Drain Current vs. Ambient Temperature Fig 13. Typical Threshold Voltage vs.
Junction Temperature
120
EAS, Single Pulse Avalanche Energy (mJ)

ID
100 TOP 1.5A
2.4A
BOTTOM 3.4A
80

60

40

20

0
25 50 75 100 125 150

Starting TJ, Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

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IRF6645
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
12V .2µF
.3µF

+
V
D.U.T. - DS

Vgs(th)
VGS

3mA

IG ID Qgs1 Qgs2 Qgd Qgodr

Current Sampling Resistors

Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω I AS

Fig 16b. Unclamped Inductive Test Circuit Fig 16c. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
- VDD 10%
VGS
10V
td(on) tr td(off) tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
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 IRF6645

Driver Gate Drive

D.U.T P.W.
Period D=
+ P.W. Period

ƒ *
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, SJ Outline

(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

D D
S
G
S
D D

G = GATE
D = DRAIN
S = SOURCE

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IRF6645
DirectFET™ Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.

DIMENSIONS
METRIC IMPERIAL
CODE MIN MAX MIN MAX
A 4.75 4.85 0.187 0.191
B 3.70 3.95 0.146 0.156
C 2.75 2.85 0.108 0.112
D 0.35 0.45 0.014 0.018
E 0.58 0.62 0.023 0.024
F 0.58 0.62 0.023 0.024
G 0.68 0.72 0.027 0.028
H 0.68 0.72 0.027 0.028
K 0.98 1.02 0.039 0.040
L 2.28 2.32 0.090 0.091
M 0.48 0.58 0.019 0.023
N 0.03 0.08 0.001 0.003
P 0.08 0.17 0.003 0.007

DirectFET™ Part Marking

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 IRF6645
DirectFET™ Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6645). For 1000 parts on 7" reel,
order IRF6645TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000)
METRIC IMPERIAL METRIC IMPERIAL
CODE MIN MAX MIN MAX MIN MAX MIN MAX
A 330.0 N.C 12.992 N.C 177.77 N.C 6.9 N.C
B 20.2 N.C 0.795 N.C 19.06 N.C 0.75 N.C
C 12.8 13.2 0.504 0.520 13.5 12.8 0.53 0.50
D 1.5 N.C 0.059 N.C 1.5 N.C 0.059 N.C
E 100.0 N.C 3.937 N.C 58.72 N.C 2.31 N.C
F N.C 18.4 N.C 0.724 N.C 13.50 N.C 0.53
G 12.4 14.4 0.488 0.567 11.9 12.01 0.47 N.C
H 11.9 15.4 0.469 0.606 11.9 12.01 0.47 N.C

DIMENSIONS
METRIC IMPERIAL
NOTE: CONTROLLING
MIN MAX MAX
DIMENSIONS IN MM
7.90 8.10 0.319
3.90 4.10 0.161
11.90 12.30 0.484
5.45 5.55 0.219
4.00 4.20 0.165
5.00 5.20 0.205
1.50 N.C N.C
1.50 1.60 0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/05
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