Bipolar Junction Transistor (BJT):

Bipolar Junction Transistor (BJT):

BJT:
1. It’s a semiconductor device that can amplify electrical
signals such as radio or television signals.

2. Its essential ingredient of every electronic circuits; from the

simplest amplifier or oscillator to the most elaborate digital
computer.

3. It’s a three terminal device; Base, Emitter, and

Collector.
There are two type of BJT:

➢ npn type

➢ pnp type
Transistor structure:

➢ npn type ➢ pnp type

 Transistor biasing:
Region Base-Emitter Base-collector
✓ In order to operate properly as an amplifier, junction junction
it’s necessary to correctly bias the two pn-
junctions with external voltages. Active Forward Bias Revers Bias

✓ Depending upon external bias voltage

Saturation Forward Bias Forward Bias
polarities used; the transistor works in one of
four regions (modes).
Cut-off Revers Bias Revers Bias

✓ For transistor to be used as an Active device

(Amplifier); the emitter-base junction must Invers Revers Bias Forward Bias
be forward bias, while the collector-base
junction must be reverse biased.
 E n p n C
In active region 𝑰𝑪
𝑰𝑬
✓ The base region is thin and lightly doped 𝑰𝑩
✓ The emitter-base junction is
𝑽𝑩𝑬 B 𝑽𝑪𝑩
forward biased, thus the depletion
E C
region at this junction is reduced.
✓ The base-collector junction is
revers biased, thus the depletion
B
region at this junction is
increased.
VBE VCB
✓ The forward biased BE-junction causes the electrons E C
in the n-type emitter to flow toward the base; this
constitutes the emitter current 𝑰𝑬 .

B
✓ As these electrons flow through the P-type base; they
tend to recombine with holes in p-type base.
VBE VCB
✓ Since the base region is lightly doped; very few of the electrons
injected into the base from the emitter recombine with holes to
constitute base current 𝑰𝑩 and the remaining large number of
electrons cross the base and move through the collector region to
the positive terminal of the external DC source; this constitute
collector current 𝑰𝑪

✓ There is another component for 𝑰𝑪 due to the

minority carrier; 𝑰𝑪𝑩𝑶
Minority

✓ 𝑰𝑪 = 𝜶𝑰𝑬 + 𝑰𝑪𝑩𝑶

Majority
0.998 > 𝛼 > 0.9
𝑰𝑪 = 𝜶𝑰𝑬 + 𝑰𝑪𝑩𝒐
𝑰𝑬 = 𝑰𝑪 + 𝑰𝑩
𝑰𝑪 = 𝜶 𝑰𝑪 + 𝑰𝑩 + 𝑰𝑪𝑩𝒐
𝜶 𝟏
❖ 𝑰𝑪 = 𝑰𝑩 + 𝟏−𝜶 𝑰𝑪𝑩𝒐
𝟏−𝜶
𝜶
Let Beta, 𝛃 = 𝟏−𝜶

❖𝑰𝑪 = 𝛃 𝑰𝑩 + (𝛃 + 𝟏)𝑰𝑪𝑩𝒐

𝑰𝑪 = 𝛃 𝑰𝑩 + 𝑰𝑪𝑬𝒐 If α =0.99 β = 99
𝜶
𝛃=
𝟏−𝜶 If α =0.995 β = 199
 In active region:
𝜶
𝑰𝑪 = 𝜶𝑰𝑬 + 𝑰𝑪𝑩𝒐 β=
𝟏−𝜶
𝑰𝑪 = β 𝑰𝑩 + (β + 𝟏)𝑰𝑪𝑩𝒐
𝑰𝑪 = β 𝑰𝑩 + 𝑰𝑪𝑬𝒐
𝑰𝑬 = 𝑰𝑪 + 𝑰𝑩
Approximate relationships:
𝑰𝑪 ≅ 𝜶𝑰𝑬 ≅ 𝑰𝑬
𝑰𝑪 ≅ β 𝑰𝑩
𝑰𝑬 ≅(β+𝟏)𝑰𝑩
Input characteristic curve:

𝑉𝐵𝐸 𝑡
𝑖𝐵 𝑡 = 𝐼𝐵𝑜 𝑒 ɳ 𝑉𝑇 −1

𝑉𝐵𝐸 𝑡
𝑖𝐵 𝑡 ≅ 𝐼𝐵𝑜 𝑒 ɳ 𝑉𝑇
𝑉𝐵𝐸 𝑡
𝑖𝐶 𝑡 ≅ 𝐼𝑆 𝑒 ɳ 𝑉𝑇

𝑰𝑺 = β 𝐼𝐵𝑜
Output characteristic curve:
1. In the cutoff region : 3. In the saturation region :
𝑰𝑩 = 𝑰𝑪 = 𝑰𝑬 = 𝟎
𝑽𝑪𝑬 = 𝑽𝑪𝑬,𝒔𝒂𝒕
2. In the active region :
𝑰𝑪 = 𝜶𝑰𝑬 𝑽𝑩𝑬 = 𝟎. 𝟖 𝑽 , Si , npn
𝑰𝑪 = β 𝑰𝑩 𝑽𝑩𝑬 = −𝟎. 𝟖 𝑽 , Si , pnp
𝑰𝑬 = (β+𝟏)𝑰𝑩
𝑽𝑩𝑬 = 𝟎. 𝟕 𝑽 , Si , npn
𝑽𝑩𝑬 = −𝟎. 𝟕 𝑽 , Si , pnp

𝑽𝑪𝑬 > 𝑽𝑪𝑬,𝒔𝒂𝒕 = 𝟎. 𝟐 𝑽 , Si , npn

𝑽𝑪𝑬 < 𝑽𝑪𝑬,𝒔𝒂𝒕 = − 𝟎. 𝟐 𝑽 , Si , pnp
 Example:
Find the Q point 𝑽𝑪𝑬𝑸 , 𝑰𝑪𝑸
C

n
B

p
C
B

n
E
E

Since the base emitter junction is

forward bias; the transistor could be
either in the active or the saturation
region
 ➢ Assume that the transistor in the active region:
KVL: 𝟓 = 𝟐𝟎𝟎𝒌 𝑰𝑩 + 𝑽𝑩𝑬
𝟓 − 𝟎. 𝟕
𝑰𝑩 = = 𝟎. 𝟎𝟐𝟏𝟓 𝒎𝑨
𝟐𝟎𝟎𝒌
𝑰𝑪 = 𝛃 𝑰𝑩 = 𝟏𝟎𝟎 ∗ 𝟎. 𝟎𝟐𝟏𝟓 = 𝟐. 𝟏𝟓 𝒎𝑨
KVL: 𝟏𝟎 = 𝑹𝑪 𝑰𝑪 + 𝑽𝑪𝑬
𝑽𝑪𝑬 = 𝟏𝟎 − 𝑹𝒄 𝑰𝒄

❖𝑽𝑪𝑬 = 𝟏𝟎 − 𝟑𝒌 ∗ 𝟐. 𝟏𝟓𝒎𝑨
𝑰𝑪𝑸 = 𝟐. 𝟏𝟓 𝒎𝑨
❖𝑽𝑪𝑬 = 𝟑. 𝟓𝟓 𝑽 ➢ 𝑽𝑪𝑬𝑸 = 𝟑. 𝟓𝟓 𝑽

➢ Since 𝑽𝑪𝑬 > 𝑽𝑪𝑬,𝒔𝒂𝒕 >>> The transistor is in the active region
Example Find the Q point 𝑽𝑪𝑬𝑸 , 𝑰𝑪𝑸
Solution:
Since the base emitter junction is
forward bias ; the transistor could be
either in the active or the saturation
region

➢ Assume that the transistor in the active region

KVL: 5 = 200𝑘 𝐼𝐵 + 𝑉𝐵𝐸 + 2𝑘 𝐼𝐸 KVL: 𝟏𝟎 = 𝑹𝑪 𝑰𝑪 + 𝑽𝑪𝑬 + 𝑹𝑬 𝐼𝐸
𝑰𝑬 = (𝛃+𝟏)𝑰𝑩 𝑽𝑪𝑬 = 𝟏𝟎 − 𝑹𝒄 𝑰𝒄 − 𝑹𝑬 𝑰𝑬
❖𝑽𝑪𝑬 = 𝟒. 𝟔𝟑 𝑽
𝟓 − 𝟎. 𝟕 Since 𝑽𝑪𝑬 > 𝑽𝑪𝑬,𝒔𝒂𝒕
𝑰𝑩 = = 𝟎. 𝟎𝟏𝟎𝟕 𝒎𝑨
𝟐𝟎𝟎𝒌 + 𝟏𝟎𝟏 ∗ 𝟐𝒌 ∴The transistor is in the active region
∴ 𝑽𝑪𝑬𝑸 = 𝟒. 𝟔𝟑 𝑽 𝒂𝒏𝒅 𝑰𝑪𝑸 = 𝟏. 𝟎𝟕 𝒎𝑨
𝑰𝑪 = 𝜷 𝑰𝑩 = 𝟏𝟎𝟎 ∗ 𝟎. 𝟎𝟏𝟎𝟕 = 𝟏. 𝟎𝟕 𝒎𝑨
 Second method:
1) In the active region:
𝑽𝑩𝑩 − 𝑽𝑩𝑬
𝑰𝑩 =
𝑹𝑩
𝑰𝑪 = 𝛃 𝑰𝑩
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 𝑰𝒄

As : 𝑹𝑩 𝑰𝑩 𝑰𝑪 𝑽𝑪𝑬

2 ) In the saturation region:

𝑽𝑪𝑬 = 𝑽𝑪𝑬,𝒔𝒂𝒕 = 𝟎. 𝟐 𝑽 , Si , npn
𝑽𝑪𝑪 − 𝑽𝑪𝑬,𝒔𝒂𝒕
𝑰𝑪 = 𝑰𝑪,𝒔𝒂𝒕 =
𝑹𝑪
 𝑰𝑪,𝒔𝒂𝒕
Let define: 𝑰𝑩 𝒎𝒊𝒏 = 𝜷

𝑰𝑪,𝒔𝒂𝒕
𝑰𝑩 𝒎𝒊𝒏 =
𝜷
If 𝐼𝐵 > 𝐼𝐵 𝑚𝑖𝑛 the transistor is in the saturation region.
If 𝐼𝐵 < 𝐼𝐵 𝑚𝑖𝑛 the transistor is in the Active region.
 +𝟏𝟐 𝑽
BJT as switch:
𝟐. 𝟐𝑲
Example: 𝑽𝒐 (𝒕)
𝟏𝟓𝑲
β = 30
Find 𝑉𝑜 (𝑡) for the input given below:
𝑽𝒊 (𝒕)
100𝑲

−𝟏𝟐 𝑽
Solution: +𝟏𝟐 𝑽

❖Let 𝑽𝒊 𝒕 = +𝟏𝟐 𝒗𝒐𝒍𝒕 𝟐. 𝟐𝑲

𝑹𝒕𝒉
Calculate 𝑉𝑡ℎ &𝑅𝑡ℎ +
β = 30
+𝟏𝟐 𝑽 𝑽𝒐
𝑽𝒕𝒉
-

𝟐. 𝟐𝑲
𝟏𝟓𝑲
+
β = 30 𝑽𝒐 (𝒕) 𝟏𝟎𝟎𝒌∗𝟏𝟓𝒌
𝑹𝒕𝒉 = 𝟏𝟓𝒌 // 𝟏𝟎𝟎𝒌 =𝟏𝟓𝒌+𝟏𝟎𝟎𝒌 = 𝟏𝟑𝒌
- 𝑽𝒕𝒉 = 𝟖. 𝟗 𝒗𝒐𝒍𝒕 Proof!!
100𝑲
𝟏𝟐 𝑽 Since the base emitter junction
is forward bias; the transistor
−𝟏𝟐 𝑽
could be either in the active or
the saturation region
➢ Assume that the transistor in the saturation region
𝑽𝑪𝑪 −𝑽𝑪𝑬,𝒔𝒂𝒕 12 − 0.2
𝑰𝑪 = 𝑰𝑪 ,𝒔𝒂𝒕 = = = 5.36 𝑚𝐴
𝑹𝑪 2.2𝑘
𝑰𝑪,𝒔𝒂𝒕 𝟓.𝟑𝟔𝒎𝑨
𝑰𝑩 𝒎𝒊𝒏 = = = 𝟎. 𝟏𝟖𝒎𝑨 +
𝜷 𝟑𝟎
𝑽𝒕𝒉 − 𝑽𝑩𝑬 𝟖. 𝟗 − 𝟎. 𝟖
𝑰𝑩 = = = 𝟎. 𝟔𝟐 𝒎𝑨 -
𝑹𝑻𝑯 𝟏𝟑𝒌

Since 𝑰𝑩 > 𝑰𝑩 𝒎𝒊𝒏 the transistor is in the

saturation region.

✓ 𝑽𝒐 = 𝑽𝑪𝑬,𝒔𝒂𝒕 = 𝟎. 𝟐 𝒗𝒐𝒍𝒕

✓ 𝑰𝑪 = 𝟓. 𝟑𝟔 𝒎𝑨
❖ Let 𝑉𝑖 𝑡 = 0 𝑣𝑜𝑙𝑡
+𝟏𝟐 𝒗

𝟐. 𝟐𝑲
𝟏𝟓𝑲
+
β = 30
𝑽𝒐

100𝑲 - +

−𝟏𝟐 𝑽
-

Since 𝑽𝒕𝒉 = −𝟏. 𝟓𝟔 𝒗𝒐𝒍𝒕

Base emitter junction is revers biased the
transistor in cutoff region
✓ 𝑽𝒐 = 𝑽𝑪𝑬 = 𝟏𝟐 𝒗𝒐𝒍𝒕 , 𝑰𝑪 = 𝟎 𝒎𝑨
The circuit acts as inverter or not gate
Transistor biasing circuits:
1. Fixed current bias circuit + VCC

KVL : 𝑽𝑪𝑪 = 𝑹𝑩 𝑰𝑩 + 𝑽𝑩𝑬 IC

RC

RB +
𝑽𝑪𝑪 − 𝑽𝑩𝑬
𝑰𝑩 =
𝑹𝑩 IB
-
𝑰𝑪 = 𝛃 𝑰𝑩

KVL : 𝑽𝑪𝑪 = 𝑹𝒄 𝑰𝒄 + 𝑽𝑪𝑬

𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 𝑰𝒄
 Transistor biasing circuits: From eq.2:
𝟓 = 𝟏𝟎 − 𝑹𝒄 (𝟏𝒎𝑨)
Example: Design a fixed current bias circuit ➢ 𝑹𝒄 = 𝟓𝒌Ω
using a silicon transistor having 𝑰𝑪 = 𝛃 𝑰𝑩
𝛃 𝒎𝒊𝒏 = 𝟐𝟓 , 𝛃 𝒎𝒂𝒙 = 𝟕𝟓 𝟐𝟓+𝟕𝟓
Let 𝛃 = = 𝟓𝟎
𝟐
Such that 𝑰𝒄 = 𝟏𝒎𝑨 ,and 𝑽𝑪𝑬 = 𝟓 𝒗𝒐𝒍𝒕 the average between max && min
given 𝑽𝑪𝑪 = 𝟏𝟎 𝒗𝒐𝒍𝒕
𝑰𝑪 𝟏𝒎𝑨
Solution: 𝑰𝑩 = = = 𝟐𝟎 µ𝑨
𝜷 𝟓𝟎
Using equations of the fixed current bias From eq.1
circuit:
𝑽𝑪𝑪 − 𝑽𝑩𝑬 𝟏𝟎 − 𝟎. 𝟕
𝑰𝑩 =
𝑽𝑪𝑪 − 𝑽𝑩𝑬
, 𝑽𝑩𝑬 = 𝟎. 𝟕 𝑽 − (𝟏) 𝑰𝑩 = =
𝑹𝑩 𝑹𝑩 𝑹𝑩
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 𝑰𝒄 − (𝟐)
➢ 𝑹𝑩 = 𝟒𝟔𝟓 𝒌Ω
 Transistor biasing circuits:
If 𝜷 = 𝟓𝟎 >>> 𝑹𝒄 = 𝟓𝒌Ω, 𝑹𝑩 = 𝟒𝟔𝟓𝒌Ω ,𝑰𝑪 = 𝟏𝒎𝑨, 𝑽𝑪𝑬 = 𝟓𝑽

BUT:
When 𝜷 = 𝜷 𝒎𝒊𝒏 = 𝟐𝟓
For:
𝑰𝑩 = 𝟐𝟎 µ𝑨 𝟕𝟓 ≥ 𝜷 ≥ 𝟐𝟓
𝑰𝑪 = 𝟎. 𝟓𝒎𝑨
𝟏. 𝟓𝒎𝑨 ≥ 𝑰𝑪 ≥ 𝟎. 𝟓𝒎𝑨
𝑽𝑪𝑬 = 𝟕. 𝟓𝑽

When 𝜷 = 𝜷 𝒎𝒂𝒙 = 𝟕𝟓
𝑰𝑩 = 𝟐𝟎 µ𝑨
𝑰𝑪 = 𝟏. 𝟓𝒎𝑨
𝑽𝑪𝑬 = 𝟐. 𝟓𝑽
❖ The fixed current bias circuit is not a very satisfactory circuit of obtaining
good bias point stability.
 Transistor biasing circuits:
+
2. Collector to base feedback bias circuit:
I
KVL : 𝑽𝑪𝑪 = 𝑹𝒄 𝑰 + 𝑹𝑩 𝑰𝑩 + 𝑽𝑩𝑬
𝑰 = 𝑰𝑩 + 𝑰𝒄
𝑽𝑪𝑪 − 𝑽𝑩𝑬
𝑰𝑩 = … (𝟏)
𝑹𝑩 + (𝛃 + 𝟏)𝑹𝒄

𝑰𝑪 = 𝛃 𝑰 𝑩

KVL : 𝑽𝑪𝑪 = 𝑹𝒄 (𝑰𝑩 +𝑰𝒄 ) + 𝑽𝑪𝑬

𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 (𝑰𝑩 +𝑰𝒄 ) … (𝟐)
 Transistor biasing circuits:
From eq.1:
Example: Design a collector to base feedback bias
circuit using a silicon transistor having 𝑽𝑪𝑪 − 𝑽𝑩𝑬
𝑰𝑩 =
β min = 25 , β max = 75 𝑹𝑩 + 𝛃 + 𝟏 𝑹𝒄
𝟏𝟎−𝟎.𝟕
Such that 𝐼𝑐 = 1𝑚𝐴 ,and 𝑉𝐶𝐸 = 5 𝑣𝑜𝑙𝑡 given 𝑉𝐶𝐶 = , , , , 𝑰𝑩 = 𝟐𝟎µ𝑨
𝑹𝑩 + 𝟓𝟎+𝟏 ∗𝟒.𝟗𝒌
= 10 𝑣𝑜𝑙𝑡
Solution:
➢ 𝑹𝑩 ≈ 𝟐𝟏𝟓𝒌Ω
𝟐𝟓+𝟕𝟓
Let 𝛃 = = 𝟓𝟎 the average between
𝟐
max && min As before we can proof that:
𝑰𝑪 𝟏𝒎𝑨
𝑰𝑩 = = = 𝟐𝟎 µ𝑨 75 ≥ 𝛽 ≥ 25
𝜷 𝟓𝟎
From eq.2: 1.19𝑚𝐴 ≥ 𝐼𝐶 ≥ 0.68𝑚𝐴
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 (𝑰𝑩 +𝑰𝒄 ) There is an improvement over the
𝟓 = 𝟏𝟎 − 𝑹𝒄 (𝟏𝒎𝑨 + 𝟐𝟎µ𝑨) fixed bias circuit.
➢ 𝑹𝒄 ≈ 𝟒. 𝟗𝒌Ω
 Transistor biasing circuits:

3. Biasing circuit with stabilization resistor (𝑹𝑬 ): +

KVL : 𝑽𝑪𝑪 = 𝑹𝑩 𝑰𝑩 + 𝑽𝑩𝑬 + 𝑹𝑬 𝑰𝑬

𝐼𝐸 = (𝛽+1)𝐼𝐵

𝑽𝑪𝑪 − 𝑽𝑩𝑬
𝑰𝑩 = … (𝟏)
𝑹𝑩 + (𝛃 + 𝟏)𝑹𝑬

𝑰𝑪 = 𝛃 𝑰𝑩

KVL : 𝑽𝑪𝑪 = 𝑹𝒄 𝑰𝒄 + 𝑽𝑪𝑬 + 𝑹𝑬 𝑰𝑬

𝐕𝐂𝐄 = 𝐕𝐂𝐂 − 𝐑 𝐜 𝐈𝐜 − 𝐑 𝐄 𝐈𝐄 … (𝟐)

 Transistor biasing circuits:
Example: Design Biasing circuit with stabilization resistor
(𝑹𝑬 ) using a silicon transistor having From eq.2 :
𝛃 𝒎𝒊𝒏 = 𝟐𝟓 , 𝛃 𝒎𝒂𝒙 = 𝟕𝟓 𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 𝑰𝒄 − 𝑹𝑬 𝑰𝑬
Such that 𝑰𝒄 = 𝟏𝒎𝑨 ,and 𝑽𝑪𝑬 = 𝟓 𝒗𝒐𝒍𝒕 given 𝑽𝑪𝑪 = 𝟏𝟎 𝒗𝒐𝒍𝒕
➢ 𝑹𝑪 = 𝟑𝒌Ω
Solution:
𝑽𝑪𝑪 − 𝑽𝑩𝑬
In this circuit we have 3-unknwons From eq.1 : 𝑰𝑩 = 𝑹𝑩 +(𝛃+𝟏)𝑹𝑬
(𝑹𝑩 , 𝑹𝒄 , 𝑹𝑬 ) & two equations!
➢ We must make a new assumption : ➢ 𝑅𝐵 = 365𝑘Ω
𝑽𝑪𝑪 𝑽𝑪𝑪
𝟓
≥ 𝑽 𝑹𝑬 ≥ 𝟏𝟎
; 𝛃 = 𝟓𝟎 Proof that :

let 𝑽𝑹𝑬 =
𝑽𝑪𝑪
=
𝟏𝟎
= 𝟐 𝒗𝒐𝒍𝒕 𝟕𝟓 ≥ 𝜷 ≥ 𝟐𝟓
𝟓 𝟓
𝑽𝑹𝑬 = 𝑹𝑬 𝑰𝑬 𝟏. 𝟑𝟒𝟗𝒎𝑨 ≥ 𝑰𝑪 ≥ 𝟎. 𝟓𝟓𝟕𝟓𝟓𝒎𝑨
There is an improvement over the fixed bias
𝟐
➢ 𝑹𝑬 = ≅ 𝟐𝒌Ω circuit.
𝟏.𝟎𝟐 𝒎𝑨
Transistor biasing circuits:

4) Voltage divider bias circuit: +

a) Approximate method:
𝑰𝑩 Very small ⋙ 𝑰𝑩 = 𝟎
❖ 𝑰𝟏 = 𝑰𝟐
𝑹𝟐
𝑽𝑩 = 𝑽 Voltage divider
𝑹𝟐 +𝑹𝟏 𝒄𝒄
𝑰𝑩
𝑽𝑩𝑬 = 𝑽𝑩 − 𝑽𝑬
❖ 𝑽𝑬 = 𝑽𝑩 − 𝑽𝑩𝑬
𝑽𝑬 𝑽𝑩 − 𝑽𝑩𝑬
𝑰𝑬𝟏 = =
𝑹𝑬 𝑹𝑬
𝑰𝑪 = 𝜶𝑰𝑬 ≈ 𝑰𝑬
The Q point is completely independent of the Beta
𝑽𝑪𝑬 = 𝑽𝑪𝑪 − 𝑹𝒄 𝑰𝒄 − 𝑹𝑬 𝑰𝑬
 +𝑽𝑪𝑪
Transistor biasing circuits:
b) Exact method: 𝑹𝑪
𝑹𝒕𝒉
𝑹𝟏 𝑹 𝟐
𝑹𝒕𝒉 = 𝑽𝒕𝒉
𝑹𝟏 + 𝑹𝟐
𝑹𝑬
𝑹𝟐
𝑽𝒕𝒉 = 𝑽𝑪𝑪
𝑹𝟏 + 𝑹𝟐

KVL: 𝑽𝒕𝒉 = 𝑹𝒕𝒉 𝑰𝑩 + 𝑽𝑩𝑬 + 𝑹𝑬 𝑰𝑬

𝑰𝑬 = 𝛃+𝟏 𝑰𝑩

𝑽𝒕𝒉 − 𝑽𝑩𝑬
𝑰𝑬𝟐 =
𝑹𝒕𝒉
+ 𝑹𝑬
𝛃+𝟏
Transistor biasing circuits:
Using approximate method, we get:
𝑽𝑩 − 𝑽𝑩𝑬
𝑰𝑬𝟏 =
𝑹𝑬
Where: To make 𝑰𝑬𝟐 ≅ 𝑰𝑬𝟏 :
𝑹𝟐 𝑹𝒕𝒉
𝑽𝑩 = 𝑽𝒄𝒄 + 𝑹𝑬 ≅ 𝑹𝑬
𝑹𝟐 + 𝑹 𝟏 𝛃+𝟏
Using exact method, we get: 𝑹𝒕𝒉
≪ 𝑹𝑬
𝑽𝒕𝒉 − 𝑽𝑩𝑬 𝛃+𝟏
𝑰𝑬𝟐 = 𝑹𝒕𝒉 ≪ ( 𝛃 + 𝟏)𝑹𝑬
𝑹𝒕𝒉
+ 𝑹𝑬
𝛃+𝟏
𝛃+𝟏 𝑹𝑬
Where: 𝑹𝒕𝒉 = 𝟏𝟎,𝟐𝟎,𝟑𝟎..
𝑹 𝑹 𝑹𝟐
𝑹𝒕𝒉 = 𝑹 𝟏+𝑹𝟐 ,,, 𝑽𝒕𝒉 = 𝑹 +𝑹
𝑽𝑪𝑪
𝟏 𝟐 𝟏 𝟐
Example: Design a Voltage divider bias circuit KVL: 𝑽𝑪𝑪 = 𝑽𝑪𝑬 + 𝑹𝒄 𝑰𝒄 + 𝑹𝑬 𝑰𝑬
using a silicon transistor having
➢ 𝑅𝑐 = 4𝑘Ω
𝜷 𝒎𝒊𝒏 = 𝟐𝟓 , 𝜷 𝒎𝒂𝒙 = 𝟕𝟓
Such that 𝑰𝒄 = 𝟏𝒎𝑨 ,and 𝑽𝑪𝑬 = 𝟓 𝒗𝒐𝒍𝒕 given To find 𝑹𝟏 , 𝑹𝟐 ,we need to find 𝑹𝒕𝒉 , 𝑽𝒕𝒉
𝑽𝑪𝑪 = 𝟏𝟎 𝒗𝒐𝒍𝒕 :
𝑽𝒕𝒉 −𝑽𝑩𝑬
Solution: From: 𝑰𝑬 = 𝑹𝒕𝒉
+𝑹𝑬
𝛃+𝟏
𝑽𝑪𝑪 𝟏𝟎
Let 𝑽𝑹𝑬 = = = 𝟏 𝒗𝒐𝒍𝒕 We find 𝑽𝒕𝒉 = 𝟏. 𝟕𝟐 𝒗𝒐𝒍𝒕
𝟏𝟎 𝟏𝟎
𝑽𝑹𝑬 = 𝑹𝑬 𝑰𝑬 We have : 𝑽𝒕𝒉 = 𝟏. 𝟕𝟐 𝒗𝒐𝒍𝒕 && 𝑹𝒕𝒉 = 𝟏𝒌Ω
𝟏 From:
➢ 𝑹𝑬 = 𝟏.𝟎𝟐𝒎𝑨 ≅ 𝟏𝒌Ω
𝑹𝟏 𝑹𝟐 𝑹𝟐
𝛃+𝟏 𝑹 𝑹𝒕𝒉 = and 𝑽𝒕𝒉 = 𝑽
From : 𝑹𝒕𝒉 = 𝟏𝟎,𝟐𝟎,𝟑𝟎..𝑬 𝑹𝟏 +𝑹𝟐 𝑹𝟏 +𝑹𝟐 𝑪𝑪

𝜷+𝟏 𝑹𝑬 We get:
Let 𝑹𝒕𝒉 = ,,where 𝛃 = 𝟓𝟎
𝟓𝟏
➢ 𝑹𝟏 = 𝟓. 𝟖 𝒌Ω
➢ 𝑅𝑡ℎ ≅ 1𝑘Ω ➢ 𝑹𝟐 = 𝟏. 𝟐 𝒌Ω
Our design @ 𝛃 = 𝟓𝟎
➢ 𝑹𝑬 = 𝟏𝒌Ω
➢ 𝑹𝒄 = 𝟒𝒌Ω
➢ 𝑹𝟏 = 𝟓. 𝟖 𝒌Ω
➢ 𝑹𝟐 = 𝟏. 𝟐 𝒌Ω
➢ 𝑰𝒄 = 𝟏𝒎𝑨 ,
➢ 𝑽𝑪𝑬 = 𝟓 𝒗𝒐𝒍𝒕
But:

𝟕𝟓 ≥ 𝜷 ≥ 𝟐𝟓
𝟏. 𝟎𝟎𝟔𝟕𝒎𝑨 ≥ 𝑰𝑪 ≥ 𝟎. 𝟗𝟖𝟐𝒎𝑨
Circuit using pnp transistor: +10V

Example:
2K
solution
Find 𝑰𝑬 , 𝑽𝑬𝑪 ,for the circuit below:
RTH
𝑽𝑪𝑪 = +𝟏𝟎 B = 100
8K

Using thevenin’s theorem: VTH 8V 6K

𝑹𝟏 = 𝟏𝟎𝒌 𝑹𝑬 = 𝟐𝑲

B = 100 𝑅1 𝑅2 10 ∗ 40
𝑅𝑡ℎ = = 𝑘 = 8𝑘Ω
B = 100 𝑅1 + 𝑅2 10 + 40
𝑅2 40
𝑉𝑡ℎ = 𝑉 = ∗ 10 = 8𝑣𝑜𝑙𝑡
𝑅1 + 𝑅2 𝐶𝐶 10 + 40
𝑹𝟐 = 𝟒𝟎𝒌 𝑹𝑪 = 𝟔𝒌
KVL: 10 = 2𝑘𝐼𝐸 + 𝑉𝐸𝐵 + 𝑅𝑡ℎ 𝐼𝐵 + 𝑉𝑡ℎ
➢ 𝑰𝑬 = 𝟎. 𝟔𝟐𝟓𝒎𝑨
KVL:10 = 2𝑘𝐼𝐸 + 𝑉𝐸𝐶 + 6𝑘𝐼𝐶
➢ 𝑽𝑬𝑪 = 𝟓𝒗𝒐𝒍𝒕
𝑽𝑪𝑬 = - 5V Which is < - 0.2V
Example:
Design the given circuit so that
𝑰𝑪𝑸 = 𝟐𝒎𝑨 , and 𝑽𝑪 = 𝟓 𝒗𝒐𝒍𝒕
Given that 𝑽𝑩𝑬 = 𝟎. 𝟕 𝒗𝒐𝒍𝒕 @ 𝑰𝑪 = 𝟏𝒎𝑨
𝛃=∞
+15 v

-15 v
Solution:

1𝑚𝐴
𝑉𝐵𝐸1 = 0.7 = 𝑉𝑇 ln
𝐼𝑠

2𝑚𝐴
𝑉𝐵𝐸2 = 𝑉𝑇 ln
𝐼𝑠

𝐼𝐶2
𝑉𝐵𝐸2 − 𝑉𝐵𝐸1 = 𝑉𝑇 ln
𝐼𝐶1
𝑽𝑩𝑬 (𝒕)
2𝑚𝐴
𝒊𝑪(𝒕) ≅ 𝑰𝒔 𝒆 𝑽𝑻 𝑉𝐵𝐸2 = 𝑉𝐵𝐸1 + 𝑉𝑇 ln
1𝑚𝐴
𝑽𝑩𝑬
𝑰𝑪 ≅ 𝑰𝒔 𝒆 𝑽𝑻 ➢ 𝑉𝐵𝐸2 = 0.717 𝑉

𝑰𝑪
𝑽𝑩𝑬 = 𝑽𝑻 𝒍𝒏
𝑰𝒔
In our circuit 𝐼𝐶 = 2𝑚𝐴 we must find the corresponding𝑉𝐵𝐸 ??
𝑉𝐵𝐸 @ 𝐼𝐶 = 2𝑚𝐴 ??
𝑉𝐵𝐸2 = 0.717 @ 𝐼𝐶 = 2𝑚𝐴
+15 v
KVL: 𝑉𝐶 = 𝑉𝐶𝐶 − 𝑅𝐶 𝐼𝐶

(𝑉𝐶𝐶 −𝑉𝐶 )
𝑅𝐶 =
𝐼𝐶
+
15 − 5
𝑅𝐶 = -
2𝑚𝐴
➢ 𝑅𝐶 = 5𝑘Ω
-15 v
KVL:𝑉𝐵𝐸 + 𝑅𝐸 𝐼𝐸 − 15 = 0

15 − 𝑉𝐵𝐸
𝑅𝐸 =
𝐼𝐸

➢ 𝑹𝑬 = 𝟕𝒌Ω
 Example:
Find 𝐼𝐸1 ,𝐼𝐸2 Solution
𝑹𝟏 𝑹𝟐 𝟓𝟎 ∗ 𝟏𝟎𝟎
𝑹𝒕𝒉 = = 𝒌 = 𝟑𝟑. 𝟑𝒌Ω
𝑹𝟏 + 𝑹𝟐 𝟓𝟎 + 𝟏𝟎𝟎
100k 2k 𝑹𝟐 𝟓𝟎
5k 𝑽𝒕𝒉 = 𝑽𝑪𝑪 = ∗ 𝟏𝟓 = 𝟓 𝒗𝒐𝒍𝒕
𝑹𝟏 + 𝑹𝟐 𝟓𝟎 + 𝟏𝟎𝟎
Q2
Q1 KVL:
𝑽𝑪𝑪 = +𝟏𝟓
𝑽𝒕𝒉 − 𝑽𝑩𝑬 𝟓 − 𝟎. 𝟕
50k 2.7k 𝑰𝑬𝟏 = =
3k 𝑹𝒕𝒉 𝟑𝟑. 𝟑𝒌
+ 𝑹𝑬
2k 𝛃+𝟏 𝟏𝟎𝟏 + 𝟑𝒌
(𝑰𝑪𝟏 −𝑰𝑩𝟐 ) 5k = 𝟏. 𝟐𝟖𝒎𝑨
𝑹𝒕𝒉 𝑰𝑩𝟐
Q2 KVL:
Q1
𝑽𝒕𝒉 𝟐𝒌𝑰𝑬𝟐 + 𝑽𝑬𝑩 − 𝟓𝒌 𝑰𝑪𝟏 − 𝑰𝑩𝟐 = 𝟎
3k 2.7k 𝑰𝑬𝟐 = 𝟐. 𝟕𝟖𝒎𝑨
β = 100
 Automatic Light Controller

Due to :
 BJT analysis using Graphical method:
Graphical method:

KVL : 𝑽𝑪𝑪 = 𝑹𝒄 𝑰𝒄 + 𝑽𝑪𝑬

𝟏 𝑽𝑪𝑪
𝑰𝒄 = − 𝑹 𝑽𝑪𝑬 + 𝑹
𝒄 𝒄

𝑽𝑪𝑪
𝒊𝑪 𝒕 ,𝒎𝒂𝒙 = Saturation
𝑹𝑪
𝑽𝑪𝑬(𝒕),𝐦𝐚𝐱 = 𝑽𝑪𝑪 Cutoff
 +18V +18V
Small signal BJT amplifier:

DC Analysis: 𝑉𝑠 𝑡 = 0.03sin(𝜔𝑡) 576k

576k 3 k3 k
+
From KVL: +𝒐(𝒕)
𝑽
β = 100
𝑽𝒄𝒄 − 𝑽𝑩𝑬 𝟏𝟖 − 𝟎. 𝟔𝟓 𝑽𝒔 (𝒕)
β = 100
𝑰𝑩 = = -
𝑹𝑩 𝟓𝟕𝟔𝒌 -
VBE = 0.65V
➢ 𝑰𝑩 = 𝟑𝟎µ𝑨 VBE = 0.65V

But: 𝑰𝑪 = 𝛃 𝑰𝑩

➢ 𝑰𝑪 = 𝟑𝒎𝑨
Q
KVL:
𝑽𝑪𝑪 = 𝑹𝒄 𝑰𝒄 + 𝑽𝑪𝑬
➢ 𝑽𝑪𝑬 = 𝟗 𝒗𝒐𝒍𝒕
 +18V

576k 3k

+
𝑽𝒐 (𝒕)
β = 100
𝑽𝒔 (𝒕)
-
VBE = 0.65V

Using superposition

𝑉𝐵𝐸 𝑡 = 𝑉𝐵𝐸 + 𝑣𝑏𝑒

𝑖𝐶 𝑡 = 𝐼𝐶𝑄 + 𝑖𝑐
𝑉𝐶𝐸 𝑡 = 𝑉𝐶𝐸𝑄 + 𝑣𝑐𝑒
The importance of the input coupling capacitor

+18V

+18V

576K 3k

+ 576K 3k
𝑽𝒐 (𝒕)
β = 100 +
𝑽𝒔 (𝒕)
𝑽𝒐 (𝒕)
-
β = 100
VBE = 0.65V
-
VBE = 0.65V

➢ 𝑰𝑪 = 𝟎
 Ac small signal equivalent circuits for BJT configuration:

+ Two port +
𝑖1 ℎ 𝑖2
- No independent - 11

+
+ ℎ21 𝑖1
ℎ22 𝑣2
Hybrid parameters “h- parameters”:

+
𝑣1
𝒗𝟏 = 𝒉𝟏𝟏 𝒊𝟏 + 𝒉𝟏𝟐 𝒗𝟐 - ℎ12 𝑣2 -
-
𝒊𝟐 = 𝒉𝟐𝟏 𝒊𝟏 + 𝒉𝟐𝟐 𝒗𝟐
𝒗𝟏
𝒉𝟏𝟏 = ቚ 𝒗𝟐 = 𝟎 Short circuit input impedance, Ω (𝒉𝒊 )
𝒊𝟏 𝑖1 ℎ 𝑖2
𝑖

𝒗 +
𝒉𝟏𝟐 = 𝒗𝟏 ቚ 𝒊𝟏 = 𝟎 Open circuit reverse voltage ratio, (𝒉𝒓 ) + ℎ𝑓 𝑖1
𝟐
ℎ𝑜 𝑣2

+
𝒊𝟐 𝑣1
𝒉𝟐𝟏 = ቚ 𝒗𝟐 = 𝟎 Short circuit forward current ratio, (𝒉𝒇 ) -
-
𝒊𝟏
- ℎ𝑟 𝑣2
𝒊
𝒉𝟐𝟐 = 𝒗𝟐 ቚ 𝒊𝟏 = 𝟎 Open circuit output admittance, Ʊ (𝒉𝒐 )
𝟐
 Transistor configuration:
1. common emitter: Ac output 3. common base
c signal
Ac input
signal b
Ac input Ac output
signal signal
e c
e

2. common collector b
c
Ac input
signal b

Ac output
e signal
 Common emitter & common collector:

b +
+
- e
e -
𝒗𝒃𝒆 = 𝒉𝒊𝒆 𝒊𝒃 + 𝒉𝒓𝒆 𝒗𝒄𝒆
𝒊𝒄 = 𝒉𝒇𝒆 𝒊𝒃 + 𝒉𝒐𝒆 𝒗𝒄𝒆

𝑖𝑏 ℎ𝑖𝑒 𝑖𝑐
b c
+
+ ℎ𝑓𝑒 𝑖𝑏
1 𝑣𝑐𝑒
+

𝑣𝑏𝑒
ℎ𝑜𝑒
ℎ𝑟𝑒 𝑣𝑐𝑒 -
e
- e
-
Common base:

e + c
+

- -
b
𝒗𝒆𝒃 = 𝒉𝒊𝒃 𝒊𝒆 + 𝒉𝒓𝒃 𝒗𝒄𝒃
𝒊𝒄 = 𝒉𝒇𝒃 𝒊𝒆 + 𝒉𝒐𝒃 𝒗𝒄𝒃

c
e +
+
+

b
- b
-
 𝑖𝑏 ℎ𝑖𝑒 𝑖𝑐
h-parameter typical value: b c
+
+ ℎ𝑓𝑒 𝑖𝑏
𝒉𝒊𝒆 = 𝟏𝟔𝟎𝟎Ω 1 𝑣𝑐𝑒

+
𝑣𝑏𝑒
ℎ𝑜𝑒
𝒉𝒐𝒆 = 𝟐𝟎 ∗ 𝟏𝟎 −𝟔
Ʊ ℎ𝑟𝑒 𝑣𝑐𝑒 -
e
- e
𝒉𝒇𝒆 = 𝟖𝟎 -
𝒉𝒓𝒆 = 𝟐𝟎 ∗ 𝟏𝟎−𝟒
ℎ𝑜𝑒 = 20 ∗ 10−6 Ʊ 0
𝟏
We replace with open circuit.
𝒉𝒐𝒆

𝒉𝒓𝒆 = 𝟐𝟎 ∗ 𝟏𝟎−𝟒 0

We replace 𝒉𝒓𝒆 𝒗𝒄𝒆 with short circuit.

 Approximate BJT models:
1) Common emitter & common collector: pnp
npn c c

b b
e
e
c
𝑖𝑏 𝑖𝑐 b
c +
b + +
+ ℎ𝑓𝑒 𝑖𝑏
𝑣𝑏𝑒 ℎ𝑖𝑒 𝑣𝑐𝑒
-
- -
- e
e
𝒊𝒄 = 𝒉𝒇𝒆 𝒊𝒃 = 𝛃 𝒊𝒃 𝑽𝑻 𝛃𝑽𝑻 𝛃 + 𝟏 𝑽𝑻
𝒉𝒊𝒆 = = =
𝑰𝑩 𝑰𝑪 𝑰𝑬
➢ 𝒉𝒇𝒆 = 𝛃
2-commom base:

e c
+ + e + c
+

- - -
b
-

𝒊𝒄 = 𝒉𝒇𝒃 𝒊𝒆 = 𝜶 𝒊𝒆
➢ 𝒉𝒇𝒃 = 𝜶
𝑽𝑻
𝒉𝒊𝒃 =
𝑰𝑬

𝒉𝒊𝒆 = (𝒉𝒇𝒆 +𝟏)𝒉𝒊𝒃

 𝐶1 𝐶2
BJT ac amplifiers: e Β = 200 c

1-common base amplifiers: +

𝑉𝑠 𝑽𝒐 (𝒕)
5k b 4k
Find : DC

-
1. voltage gain 10 v 12 v
2. Current gain
3. output impedance
e c
4. Input impedance
a) Dc analysis: 𝑰𝑬
5k 4k
10 − 𝑉𝐸𝐵 10 − 0.7 b
𝐼𝐸 = = = 1.86𝑚𝐴
5𝑘 5𝑘
10 v 12 v
𝑉𝑇
ℎ𝑖𝑏 = = 13.98Ω
𝐼𝐸𝑄
 𝐶1 𝐶2
BJT ac amplifiers: e Β = 200 c

1-common base amplifiers: +

𝑉𝑠 𝑽𝒐 (𝒕)
5k b 4k
b) Ac small signal analysis:
-
10 v 12 v
Ac small signal equivalent circuit:
𝑽𝒐
1. Voltage gain 𝑨𝒗 =
𝑽𝒔
𝑽𝒐 = 𝒉𝒇𝒃 𝒊𝒆 (𝟒𝒌) e 𝑖𝑒 c

𝑽𝒔 ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝑉𝑠 ℎ𝑖𝑏 𝑽𝒐 (𝒕)
𝒊𝒆 = 4k
𝒉𝒊𝒃 5k
-
𝑽𝒐 𝒉𝒇𝒃 𝟒𝒌 b
𝑨𝒗 = = = 𝟐𝟖𝟔 > 𝟏
𝑽𝒔 𝒉𝒊𝒃
𝒉𝒇𝒆
𝑽𝒔 is in phase with 𝑽𝒐 𝒉𝒇𝒃 =
𝒉𝒇𝒆+𝟏
 𝒊
2. Current gain 𝑨𝒊 = 𝒊 𝒐 Zi

𝑖𝑖𝑛
e 𝑖𝑒 c Zo
𝒊𝒏
ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝑉𝑠 ℎ𝑖𝑏 𝑽𝒐 (𝒕)
4k
𝒊𝒐 = 𝒉𝒇𝒃 𝒊𝒆 5k
-
b
𝟓𝒌
𝒊𝒆 = 𝒊𝒊𝒏
𝟓𝒌 + 𝒉𝒊𝒃
𝟓𝒌 𝒉𝒇𝒆
𝑨𝒊 =
𝟓𝒌 + 𝒉𝒊𝒃
𝒉𝒇𝒃 < 𝟏 𝒉𝒇𝒃 =
𝒉𝒇𝒆+𝟏
3. Input impedance 𝒁𝒊
𝑽𝒔
𝒁𝒊 =
𝒊𝒊𝒏
𝑽 𝒔 𝑽𝒔
𝒊𝒊𝒏 = +
𝟓𝒌 𝒉𝒊𝒃
𝑽𝒔 𝒁𝒊 ≅ 𝒉𝒊𝒃 Very small;
= (𝟓𝒌| 𝒉𝒊𝒃 ≅ 𝒉𝒊𝒃
𝒊𝒊𝒏
 e 𝑖𝑒 c

Output impedance 𝒁𝒐 ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +

𝑉𝑠 ℎ𝑖𝑏 𝑽𝒐 (𝒕)
4k
5k
𝒁𝒐 Is 𝑹𝒕𝒉 seen by the load -
b
𝑽𝑻
𝒁 𝒐 = ቝ 𝑽𝒔 = 𝟎
𝑰𝑻

e 𝑖𝑒 c 𝐼𝑇
𝑽𝑻
𝑰𝑻 = − 𝒉𝒊𝒃 𝒊𝒆 ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜
+
𝟒𝒌 𝑉𝑠 ℎ𝑖𝑏 4k 𝑉𝑇
5k
𝒊𝒆 = 𝟎
b -
𝑽𝑻
= 𝟒𝒌 (Large)
𝑰𝑻
Common base amplifier
𝐶1 𝐶2
e Β = 200 c

𝑽𝒐 𝒉𝒇𝒃 𝟒𝒌 +
𝑨𝒗 = = = 𝟐𝟖𝟔 > 𝟏 𝑉𝑠 𝑽𝒐 (𝒕)
𝑽𝒔 𝒉𝒊𝒃 5k b 4k
𝟓𝒌 -
𝑨𝒊 = 𝒉 <𝟏
𝟓𝒌 + 𝒉𝒊𝒃 𝒇𝒃 10 v 12 v

Zi e 𝑖𝑒 c Zo
𝐙𝐢 = (𝟓𝒌| 𝒉𝒊𝒃 𝑖𝑖𝑛
ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝒁𝒊 ≅ 𝒉𝒊𝒃 )Very small( 𝑉𝑠 ℎ𝑖𝑏 𝑽𝒐 (𝒕)
4k
5k
𝒁𝒐 = 𝟒𝒌 (Large) -
b
 ENEE236 SEC1
𝑹𝒔 𝐶1 𝐶2
e c
The effect of 𝑹𝒔 +
𝑉𝑠 𝑽𝒐 (𝒕)
5k 4k
𝑽𝒐 = 𝒉𝒇𝒃 𝒊𝒆 (𝟒𝒌) b

-
𝑽𝒊 12 v
𝒊𝒆 = 10 v
𝒉𝒊𝒃
𝑽𝒊 = (𝟓𝒌|| 𝒉𝒊𝒃 )/( 𝟓𝒌 𝒉𝒊𝒃 + 𝑹𝒔 𝑽𝒔
Ac small signal equivalent circuit:
𝒁𝒊
𝑽𝒊 = ∗ 𝑽𝒔 𝑹𝒔 c
𝒁𝒊 + 𝑹 𝒔 e 𝑖𝑒

+ ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝑽𝒐 𝒉𝒇𝒃 𝟒𝒌 𝒁𝒊 𝑉𝑠 ℎ𝑖𝑏 4k
𝑨𝒗𝒔 = = Vi 𝑽𝒐
𝑽𝒔 𝒉𝒊𝒃 𝒁𝒊 +𝑹𝒔 5k
-
- b
𝟔𝟐. 𝟓 𝑹𝒔 = 𝟓𝟎Ω
𝑨𝒗𝒔 =ቊ
𝟎. 𝟒 𝑹𝒔 = 𝟏𝟎𝒌Ω
 𝑹𝒔 c
𝑽𝒐 = 𝟐𝟖𝟔 𝑽𝒊 e 𝑖𝑒

+ ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝑉𝑠 ℎ𝑖𝑏 4k
𝒁𝒊 𝑽𝒐
𝑽𝒊 = ∗ 𝑽𝒔 Vi 5k
𝒁𝒊 + 𝑹 𝒔
-
- b
𝒁𝒊
𝑽𝒐 = 𝟐𝟖𝟔 𝑽𝒔
𝒁𝒊 + 𝑹 𝒔 𝑹𝒔

+
𝑉𝑠
𝒁𝒊 Must be as large as could be ; 𝑽𝒊 𝒁𝒊
-
 𝐶1 𝐶2
The effect of 𝑹𝑳 e c 𝑽𝒐 (𝒕)
+
𝑉𝑠
5k 4k 𝑹𝑳
𝑽𝒐 = 𝒉𝒇𝒃 𝒊𝒆 (𝟒𝒌||𝑹𝑳 ) b

𝑽𝒔 -
𝒊𝒆 = 10 v 12 v
𝒉𝒊𝒃

𝑽𝒐 𝒉𝒇𝒃 (𝟒𝒌||𝑹𝑳 )
𝑨𝒗 = = Ac small signal equivalent circuit:
𝑽𝒔 𝒉𝒊𝒃
e 𝑖𝑒 c 𝑽𝒐 (𝒕)
𝟎. 𝟕𝟏𝟑𝟓 𝑹𝑳 = 𝟏𝟎Ω
𝑨𝒗 = ቊ 𝑖𝑜 +
𝟐𝟎𝟒. 𝟒 𝑹𝑳 = 𝟏𝟎𝒌Ω ℎ𝑓𝑏 𝑖𝑒
𝑉𝑠 ℎ𝑖𝑏 𝑹𝑳
4k
5k
-
b
The effect of 𝑹𝑳 and𝑹𝒔
𝑹𝒔 𝐶1 𝐶2
e c 𝑽𝒐 (𝒕)
+
𝑉𝑠
Using thevenin’s theorem: 5k b 4k 𝑹𝑳

𝒁𝒐 -
10 v 12 v

𝑹𝒕𝒉 +
𝑽𝒕𝒉 𝑹𝑳 𝑽𝒐 Ac small signal equivalent circuit:
𝑹𝒔
𝑨𝒗𝒐 . Vs - e 𝑖𝑒 c 𝑽𝒐 (𝒕)

ℎ𝑓𝑏 𝑖𝑒 𝑖𝑜 +
𝑉𝑠 ℎ𝑖𝑏 𝑹𝑳
4k
5k
-
b
𝑹𝑳
𝑽𝒐 = 𝑨𝑽𝒐 𝑽𝒔
𝑹 𝑳 + 𝒁𝒐
𝒁𝒐 Must be as small as could be;
 𝑽𝑪𝑪

2) Common emitter amplifier:

ℎ𝑖𝑒 = 928 Ω 50k 3.8k
Find: 𝐶2
ℎ𝑓𝑒 = 50 𝐶1
1. voltage gain β = 50
𝑖𝑜+
+ 𝑽𝒐 (𝒕)
𝑖𝑠 𝑽𝒊
2. Current gain 10k
10k 2.2 k 1k
3. output impedance - -
4. Input impedance
𝑽𝒐 (𝒕)
𝒊𝒐 Ac small signal equivalent circuit:
𝑨𝒊 = 𝑖𝑏
𝒊𝒔 b
c +
𝟑. 𝟖𝒌 ℎ𝑓𝑒 𝑖𝑏 𝑖𝑜
𝒊𝒐 = −𝒉𝒇𝒆 𝒊𝒃 ∗ 𝑖𝑠
𝑽𝒐 (𝒕)
𝟑. 𝟖 + 𝟏𝒌 ℎ𝑖𝑒
10k||50k 3.8k
𝟏𝟎𝒌 𝟏𝟎𝒌 𝟓𝟎𝒌 10k
𝒊𝒃 = 𝒊𝒔 . -
1k
𝟏𝟎𝒌 𝟏𝟎𝒌 𝟓𝟎𝒌 + 𝒉𝒊𝒆 𝑖𝑒 e

➢ 𝑨𝒊 = −𝟑𝟑
 𝑽𝒐
𝑨𝒗 = For Common emitter amplifier:
𝑽𝒊
𝑽𝒐 = −𝒉𝒇𝒆 𝒊𝒃 (𝟏𝒌||𝟑. 𝟖𝒌) |𝐴𝑉 | > 1
𝑽𝒊 |𝐴𝑖 | > 1
𝒊𝒃 =
𝒉𝒊𝒆 𝑍𝑖 Large
𝑽𝒐 𝑍𝑜 Large
➢ 𝑨𝒗 = = −𝟒𝟐. 𝟕 𝑽𝒐 (𝒕)
𝑽𝒊
Zi
b 𝑖𝑏 Zo
c +
➢ 𝒁𝒊 = 𝟏𝟎𝒌| 𝟓𝟎𝒌 |𝒉𝒊𝒆 ℎ𝑓𝑒 𝑖𝑏
𝑖𝑠 +
𝑖𝑜
𝑽𝒐 (𝒕)
ℎ𝑖𝑒
Vi 10k||50k 3.8k
10k
-
-
➢ 𝒁𝒐 = 𝟑. 𝟖𝒌 e
1k
Impedance reflection: Ac small signal equivalent circuit:

𝑹𝟏 𝑖𝑏 b c
𝑹𝟑
𝒗𝟑
𝒗𝟏 ℎ𝑖𝑒 ℎ𝑓𝑒 𝑖𝑏

e
𝑖𝑒 𝑹𝟐

𝒗𝟐

KVL :
−𝒗𝟏 + (𝑹𝟏 +𝒉𝒊𝒆 )𝒊𝒃 + 𝑹𝟐 𝒊𝒆 + 𝒗𝟐 = 𝟎
𝒗𝟏 − 𝒗𝟐
𝒊𝒆 = 𝒉𝒇𝒆 𝒊𝒃 𝒊𝒃 =
𝑹𝟐 𝟏 + 𝒉𝒇𝒆 + 𝑹𝟏 + 𝒉𝒊𝒆
 𝑹𝟏 𝑖𝑏 b c
Base equivalent circuit:
𝑹𝟑
𝒗𝟑 𝒗𝟏 − 𝒗𝟐
𝒗𝟏 ℎ𝑖𝑒 ℎ𝑓𝑒 𝑖𝑏 𝒊𝒃 =
𝑹𝟐 𝟏 + 𝒉𝒇𝒆 + 𝑹𝟏 + 𝒉𝒊𝒆
𝑹𝟏
e
𝑖𝑒 𝑹𝟐
b

ℎ𝑖𝑒
𝒗𝟏 𝑖𝑏
𝒗𝟐

𝑅2 (1 + ℎ𝑓𝑒 )

𝒗𝟐
 𝑹𝟏 𝑖𝑏 b c
𝑹𝟑
Emitter equivalent circuit:
𝒗𝟑
𝒗𝟏 ℎ𝑖𝑒 ℎ𝑓𝑒 𝑖𝑏 𝒗𝟏 − 𝒗𝟐
𝒊𝒆 =
𝑹𝟏 + 𝒉𝒊𝒆
𝑹𝟐 +
e
𝟏 + 𝒉𝒇𝒆
𝑖𝑒 𝑹𝟐
𝑅1 + ℎ𝑖𝑒
(1 + ℎ𝑓𝑒)

𝒗𝟐 e
𝒗𝟏
𝑖𝑒 𝑅2

𝒗𝟐
𝒗𝟏 − 𝒗𝟐
𝒊𝒃 =
𝑹𝟐 𝟏 + 𝒉𝒇𝒆 + 𝑹𝟏 + 𝒉𝒊𝒆
 𝑹𝟏 𝑖𝑏 - Vx +
b c
Collector equivalent circuit: 𝑹𝟑
𝒗𝟑
- Vx + 𝒗𝟏 ℎ𝑖𝑒 ℎ𝑓𝑒 𝑖𝑏

𝑹𝟑 e
𝒗𝟑 𝑖𝑒 𝑹𝟐

ℎ𝑓𝑒 𝑖𝑏
𝒗𝟐

Vx = R3 hfe ib
 3) Common collector amplifier:
𝑽𝑪𝑪 Ac small signal equivalent circuit:

𝟏𝑲 𝒁𝒊 b 𝑖𝑏 c
250k 5k ℎ𝑓𝑒 = 50
ℎ𝑖𝑒 = 1𝐾 𝑽𝒔 ℎ𝑓𝑒 𝑖𝑏
𝐶1 20k||250k ℎ𝑖𝑒
𝟏𝑲 𝐶2
β = 50
5k
𝒁𝒐
𝑽𝒔 + e
20k +
1k 𝑽𝒐 (𝒕)
𝟏𝑲 𝑽𝒐 (𝒕)
-
-
 𝟏𝑲 b 𝑖𝑏 c

𝒁𝒊
𝑽𝒔 ℎ𝑓𝑒 𝑖𝑏
𝑽𝒐 20k||250k ℎ𝑖𝑒
𝑨𝒗 = 5k
𝑽𝒔
𝒁𝒐
𝑽𝒐 = 𝟏𝒌 ∗ 𝒊𝒆 e
+
𝒊𝒆 = 𝟏 + 𝒉𝒇𝒆 𝒊𝒃 𝒊𝒐 𝟏𝑲 𝑽𝒐 (𝒕)
To find 𝒊𝒃 base equivalent
circuit: -
𝟏𝑲 Zi
b
(𝟐𝟎𝒌||𝟐𝟓𝟎𝒌)𝒊𝒊𝒏
𝒊𝒃 = 𝒊𝒊𝒏
(𝟐𝟎𝒌| 𝟐𝟓𝟎𝒌 + 𝒉𝒊𝒆 + 𝟏𝒌 𝟏 + 𝒉𝒇𝒆 𝑽𝒔 𝒊𝒃
20k||250k ℎ𝑖𝑒

𝒗𝒔
𝒊𝒊𝒏 =
𝟏𝒌 + 𝒁𝒊𝒏

𝟏 𝑲(1 + ℎ𝑓𝑒 )
𝒁𝒊𝒏 = [(𝟐𝟎𝒌| 𝟐𝟓𝟎𝒌 ]||[𝒉𝒊𝒆 +𝟏𝒌 𝟏 + 𝒉𝒇𝒆 ]
 𝒗𝒊𝒏
𝒊𝒊𝒏 =
𝟏𝒌 + [(𝟐𝟎𝒌| 𝟐𝟓𝟎𝒌 ]||[𝒉𝒊𝒆 +𝟏𝒌 𝟏 + 𝒉𝒇𝒆 ]
𝟏𝑲 b

𝑽𝒊 𝒊𝒃
𝒊𝒊𝒏 ℎ𝑖𝑒
➢ 𝒁𝒊𝒏 = 𝟏𝟑. 𝟔𝟔𝑲 20k||250k

𝑽
➢ 𝑨𝒗 = 𝑽 𝒐 = 𝟎. 𝟗𝟏𝟒𝟗
𝒊𝒏
𝟏 𝑲(1 + ℎ𝑓𝑒 )
𝒊𝒐
➢ 𝑨𝒊 = = 𝟏𝟑. 𝟗
𝒊𝒊𝒏
 𝟏𝑲 𝒁𝒊 b 𝑖𝑏 c
To find 𝒁𝒐 ;emitter equivalent circuit:
𝑽𝒔 ℎ𝑓𝑒 𝑖𝑏
𝑹𝒕𝒉 = 𝟏𝒌\\𝟐𝟎𝒌\\𝟐𝟓𝟎𝒌 20k||250k ℎ𝑖𝑒
5k
(𝟐𝟎𝒌| 𝟐𝟓𝟎𝒌
𝑽𝒕𝒉 = 𝑽𝒊𝒏 𝒁𝒐
(𝟐𝟎𝒌| 𝟐𝟓𝟎𝒌 + 𝟏𝒌 e
+

𝑹𝒕𝒉 𝟏𝑲 𝑽𝒐 (𝒕)
b 𝑖𝑏 c

ℎ𝑓𝑒 𝑖𝑏
-
ℎ𝑖𝑒
𝑽𝒕𝒉 5k

𝟏𝑲
 𝑹𝒕𝒉
b 𝑖𝑏 c

Emitter equivalent circuit: ℎ𝑓𝑒 𝑖𝑏

ℎ𝑖𝑒
𝑽𝒕𝒉 5k
To find 𝒁𝒐 we set 𝑽𝒊𝒏 = 𝟎
❖ 𝑽𝒕𝒉 = 𝟎 e
𝑅𝑡ℎ ℎ𝑖𝑒
(1 + ℎ𝑓𝑒) (1 + ℎ𝑓𝑒) 𝒁𝒐
𝟏𝑲
+ 𝑅𝑡ℎ ℎ𝑖𝑒
𝑽𝒐 𝒁𝒐
𝑹𝒕𝒉 + 𝒉𝒊𝒆 (1 + ℎ𝑓𝑒) (1 + ℎ𝑓𝑒)
𝒁𝒐 = 𝟏𝒌|| 1𝐾
𝟏 + 𝒉𝒇𝒆
-
𝑽𝒕𝒉 +
𝑽𝒐
1𝐾

𝒁𝒐 = 𝟏𝒌\\
𝟏𝒌\\𝟐𝟎𝒌\\𝟐𝟓𝟎𝒌 + 𝒉𝒊𝒆
= 𝟑𝟔. 𝟖Ω
-
𝟏 + 𝒉𝒇𝒆
 For common collector amplifier:
𝑨𝒗 < 𝟏
𝑨𝒊 > 𝟏
𝒁𝒐 𝒗𝒆𝒓𝒚 𝒔𝒎𝒂𝒍𝒍
𝒁𝒊 = 𝒗𝒆𝒓𝒚 𝒍𝒂𝒓𝒈

The common collector as a buffer:

Although the small signal voltage gain of the common
collector (emitter follower) is less than 1, it can be used to
improve the total voltage gain of a multistage amplifier.
Common emitter amplifier 20k 1k

𝑉𝑜 +
𝐴𝑣 = = −140
𝑉𝑖𝑛
5k
DC
2k -

Proof!!
Ac small signal equivalent circuit:
b 𝑖𝑏 c

𝑽𝒊 ℎ𝑓𝑒 𝑖𝑏 +
DC 20k||5k ℎ𝑖𝑒 𝑽𝒐
1k
DC

e -
Common emitter amplifier with 𝑅𝐿 : b𝑖𝑏 c

+
𝑽𝒊 ℎ𝑓𝑒 𝑖𝑏
𝑽𝑪𝑪
20k||5k ℎ𝑖𝑒 𝑽𝒐
1k
-
20k 1k
DC

e 𝑅𝐿 = 50Ω

𝐶1
β = 50 𝐶2 +
𝑽𝒊 𝑽𝒐 (𝒕)
5k 𝑅𝐿 = 50Ω
2k 𝐶𝐸 -
𝑽𝒐
𝑨𝒗 = = −𝟔. 𝟔𝟕
𝑽𝒊𝒏

Ac small signal equivalent circuit: Do it

 Ac small signal equivalent circuit:
b1 b2
c1
Multistage amplifier: 𝒉𝒇𝒆 𝒊𝒃𝟏 𝒊𝒃𝟐 𝒉𝒇𝒆 𝒊𝒃𝟐
𝒊𝒃𝟏

20k||5k
𝑽𝒊
ℎ𝑖𝑒1 ℎ𝑖𝑒2
Find the voltage gain DC
470 k
1k
DC

e1
e2
𝒉𝒊𝒆𝟏 = 𝟏𝒌, 𝒉𝒊𝒆𝟐 = 𝟐. 𝟐𝟒𝒌, +
3.3k 50Ω
𝒉𝒇𝒆𝟏 = 𝟏𝟒𝟎, 𝒉𝒇𝒆𝟐 = 𝟏𝟎𝟎 𝑽𝒐

-
Using thevenin’s theorem:
b2
20k 470 k
1k

Q2
470 k
Q1 +
DC

DC
3.3k e2 +
5k 2k
-

-
 b2

𝟏𝑲 𝒉𝒇𝒆 𝒊𝒃𝟐
𝒊𝒃𝟐
𝒊𝒊𝒏 ℎ𝑖𝑒2
To Find the voltage gain 470 k

-𝟏𝟒𝟎𝑽𝒊
e2 +
𝑽𝒐 = (𝟑. 𝟑𝒌\\𝟓𝟎Ω)( 𝟏 + 𝒉𝒇𝒆𝟐 )𝒊𝒃𝟐 3.3k||50Ω
𝑽
𝟒𝟕𝟎𝒌 -𝒐
𝒊𝒃𝟐 = 𝒊𝒊𝒏 ∗
𝟒𝟕𝟎𝒌 + 𝒉𝒊𝒆𝟐 + (𝟑. 𝟑𝒌\\𝟓𝟎Ω)( 𝟏 + 𝒉𝒇𝒆𝟐 )

−𝟏𝟒𝟎𝒗𝒊𝒏
𝒊𝒊𝒏 =
𝟏𝒌 + 𝟒𝟕𝟎𝒌\\[𝒉𝒊𝒆𝟐 + (𝟑. 𝟑𝒌\\𝟓𝟎Ω)( 𝟏 + 𝒉𝒇𝒆𝟐 )]
𝑽𝒐
➢ 𝑨𝒗 = = −𝟖𝟓
𝑽𝒊𝒏
 The common emitter amplifier design:
Design a common emitter amplifier using a transistor having
𝛃 𝒎𝒊𝒏 = 𝟒𝟖𝟎 , 𝛃 𝒎𝒂𝒙 = 𝟏𝟓𝟎𝟎
𝑽𝒐
To provide a voltage gain ≥ 𝟐𝟎𝟎, between a small signal voltage source having a resistance
𝑽𝒔
500Ω and load 𝑹𝑳 = 𝟓𝒌

Its specified that 𝒁𝒊𝒏 ≥ 𝟓𝒌

+𝑽𝑪𝑪

Its specified that 𝒁𝒐 = 8k

𝑹𝟏 𝑹𝑪
C2
𝟎. 𝟓 𝒌
Solution :
C1
+
𝑽𝒔 (𝒕) 𝟓𝑲 𝑽𝒐
𝑹𝟐 𝑹𝑬
𝐶𝐸 -
 +𝑽𝑪𝑪

Solution: 𝑹𝟏 𝑹𝑪
Ac small signal equivalent circuit: 𝟎. 𝟓 𝒌

𝑽𝒐 = − 𝑹𝑪 \\𝑹𝑳 𝒉𝒇𝒆 𝒊𝒃 +
𝑽𝒔 (𝒕) 𝟓𝑲 𝑽𝒐
𝑹𝑬
𝑽𝒊 𝑹𝟐
𝒊𝒃 = 𝐶𝐸 -
𝒉𝒊𝒆
𝒁𝒊
𝑽𝒊 = 𝑽𝒔 Zi
𝒁𝒊 + 𝑹 𝒔 b c
𝒉𝒇𝒆 𝒁𝒊 𝟎. 𝟓 𝑲 +
❖ |𝑨𝒗 | = 𝑹𝑪 \\𝑹𝑳 + 𝒊𝒃
𝒉𝒊𝒆 𝒁𝒊 +𝑹𝒔
ℎ𝑖𝑒
𝒉𝒇𝒆 𝒊𝒃 𝑽𝒐
𝒁𝒊 𝑽𝒊 𝑹𝟐 ||𝑹𝟏 𝟓𝑲
𝑹𝑪
𝟏> > 𝟎. 𝟗 𝑽𝒔 (𝒕)
-
𝒁𝒊 + 𝑹 𝒔
- e
𝒉𝒇𝒆
❖ |𝑨𝒗 | = (𝟎. 𝟗) 𝑹𝑪 \\𝟓𝒌
𝒉𝒊𝒆
𝒉𝒇𝒆
Let 𝒈𝒎 = 𝒉𝒊𝒆
= 𝟑𝟖. 𝟗𝟐 𝑰𝑪𝑸
 +𝑽𝑪𝑪

❖ |𝑨𝒗 = (𝒈𝒎 𝟎. 𝟗 𝑹𝑪 \\𝟓𝒌 ≥ 𝟐𝟎𝟎

Its specified that 𝒁𝒐 = 𝟖 𝒌 𝑹𝟏 𝑹𝑪

∴ 𝑹𝑪 = 𝟖𝒌, then 𝒈𝒎 ≥ 𝟕𝟐. 𝟐

Let 𝒈𝒎 = 𝟕𝟕. 𝟖𝟔 , then 𝑰𝑪𝑸 = 𝟐𝒎𝑨 𝑹𝑬
𝑹𝟐
Since 𝑽𝑹𝑪 = 𝟏𝟔𝑽; let 𝑽𝑪𝑪 = 𝟑𝟎𝑽

Let 𝑽𝑹𝑬 =
𝑽𝑪𝑪
= 𝟔𝒗𝒐𝒍𝒕 𝑽𝒕𝒉 = 𝟔. 𝟖𝟏 𝒗𝒐𝒍𝒕
𝟓
𝑽𝑹𝑬 𝑹𝟐
𝑹𝑬 = = 𝟑𝒌Ω 𝑽𝒕𝒉 = 𝑽𝑪𝑪
𝑰𝑬 𝑹𝟏 + 𝑹𝟐
𝒁𝒊 = 𝑹𝒕𝒉 || hie = 5k 𝑹𝟏 𝑹𝟐
𝑹𝒕𝒉 =
𝑹𝟏 + 𝑹𝟐
𝜷𝑽𝑻
𝒉𝒊𝒆 = = 6.165K ∴ 𝑹𝒕𝒉 = 26.45k ➢ 𝑹𝟏 = 𝟑𝟒. 𝟐𝟐𝒌
𝑰𝑪
𝑽𝒕𝒉 −𝑽𝑩𝑬
From : 𝑰𝑬 = 𝑹𝒕𝒉 ➢ 𝑹𝟐 = 𝟏𝟏𝟔. 𝟓. 𝟔𝒌
𝜷+𝟏
+𝑹𝑬
Example : Ac small signal equivalent circuit:
+𝑽𝑪𝑪 𝑹𝒇
Find voltage gain
𝑹𝑪 𝒊𝒇
𝑹𝒇 b c
𝒊𝒐

𝑽𝒔 (𝒕) 𝒊𝒃 𝒉𝒇𝒆 𝒊𝒃 +
ℎ𝑖𝑒
𝑹𝑪 𝑽
+ 𝒐

𝑽𝒔 (𝒕) 𝑽𝒐 e -
-
𝑽𝒔
𝒊𝒃 =
𝒉𝒊𝒆
𝑽𝒐 = −𝑹𝑪 𝒊𝒐 𝑹𝑪 𝒉𝒇𝒆
𝒊𝒐 = 𝒉𝒇𝒆 𝒊𝒃 + 𝒊𝒇 𝑹𝑬 −𝑹𝑪 𝒉𝒊𝒆
𝑽𝒐 − 𝑽 𝒔 𝑨𝒗 = −
𝑹
𝒊𝒇 = 𝟏 + 𝑹𝑪
𝑹𝒇 𝑬