JEE-ADV PHYSICS- VOL- VI EXPERIMENTAL PHYSICS

EXPERIMENT - 15 A Note this position and measure its distance from

To determine the focal length of a concave mir- the pole of the mirror as  v  .
ror.  Repeat the same experiment for different values
of object distance u  and calculate the
Concave
Image mirror corresponding image distance  v 
 Focal length of the mirror can be calculated by
C O F using the formula.
I Pole
uv
f  in each case and finally take the av-
Image
u uv
needle object
needle erage.
v  When a graph is plotted between object distance

 To perform this experiment, we require optical  u  along negative x-axis and image distance
bench, upright stands, optical needles and a con-
cave mirror.
  along negative y-axis, a rectangular
 When an object needle is placed at a distance hyperbola is obtained.
' u ' from the pole of a concave mirror, by  The angle bisector OC drawn at an angle 450
removing the parallax between the image needle with x-axis, the lines OP and OQ are perpen-
and the inverted image of the object needle dicular to X and Y axes respectively
formed by the concave mirror the position of the u P O
image is located. The distance to the image X
0
45
needle from the pole of the mirror is ' v ' . If the
focal length of the concave mirror is ' f ' then C
Q
v
uv
f 
uv
PROCEDURE Y

 Find the rough focal length of the concave

mirror by focussing the image of distant object  From the graph OP  OQ  2 f
on a wall. OP  OQ
 Take an optical needle as an object needle (O). f 
4
The tip of the object needle and the pole of the
concave mirror should be on the same line. 1
 When a graph is plotted between taken along
 Place the object needle at a distance  u  , 1.5 u
times the roughly calculated focal length of the 1
mirror. Place another image needle behind the negative x-axis and taken along negative
v
object needle on the same side of the mirror.
y-axis, we get a straight line which cuts both x
Adjust the position of the image needle and
and y axes at P and Q respectively..
coincide it with the image formed by the
concave mirror without parallox.  From the graph,
 In this position, the real image formed by the 1
mirror and the image needle will move together OP  OQ 
f
when our eye is moved towards left or right.
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 Keep the object upright at a certain distance say

2
f  40cm from the lens. Adjust the height of the ob-
OP  OQ ject needle to make its tip lie on the horizontal
line through the optic centre of the lens.
1
 Clamp the holder with convex mirror near the
P u O
X lens upright keeping the reflecting surface of
1
the mirror towards the lens and adjust the height
v of the mirror to make its pole lie on the horizon-
tal line passing through the optic centre of the
lens, making the surface of the mirror vertical
and perpendicular to the length of the optical
Q bench.
 By adjusting the positions of convex lens and
Y
convex mirror, see the inverted image of the
object needle formed by reflection from the
EXPERIMENT - 15 B
convex mirror.
To find the focal length of a convex mirror using  Adjust the height of the needle so that the tips
a convex lens are seen in line with your right eye open. When
you move your eye towards right, the tips get
L
separated. It means the tips have parallax.
 Move the convex mirror backwards until
tip-to-tip parallax is removed and note this
o C
P position.
 Remove the convex mirror keeping upright in
L its position. See with your right eye open from
the other end of the optical bench. You can see
M
an inverted and enlarged image of the object
O I needle.
 Mount the second optical needle (image needle)
in the fourth upright near the other end of the
optical bench.
 To perform this experiment, we require, an  Adjust the height of the image needle so that its
optical bench, convex lens, convex mirror, a lens tip is seen in line with the tip of the image. By
holder, a mirror holder, two optical needles and removing parallax, again note the position.
a meter scale.  By changing the position of object needle repeat
 If ‘R’ is radius of curvature of a convex mirror, the experiment 5 to 6 times and note the
R observations.
then its focal length f   The distance between the image needle and con-
2
vex lens in each case gives radius of curva-
PROCEDURE ture (R) of the convex mirror when the mirror
 Clamp the holder with the convex lens in a fixed is placed very close to the convex lens.
upright such that the lens surface is vertical and  The focal length of the convex mirror can be
perpendicular to the length of the optical bench.
 Take a thin optical needle as an object (O) and R
obtained by the formula f 
mount it in a laterally movable upright which is 2
kept at zero on the optical bench.

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EXPERIMENT - 15 C  Plot a graph between ' u ' (along negative x-axis)

To find the focal length of a convex LENS and ' v ' (along positive y-axis). It will be a
rectangular hyperbola. When an angle bisector
is drawn, it cuts the curve of a point ‘C’.
Image
 From the graph, CP  CQ  2 f . Therefore the
C
O
Image coordinates of C are  2 f ,2 f 
needle
 Focal length of convex lens from u   graph
Object u v is
 For performing the experiment, we require an CP  CQ
optical bench, three uprights, a convex lens, a f 
4
lens holder, two optical needles and a meter
scale. Y

 If ' u ' is distance to the object from the convex

lens ‘V’ is distance to the image from the
convex lens and ' f ' is focal length of the v
C Q
convex lens, then
1 1 1 450
   by convention  X
u P O
f v u
PROCEDURE 1
 Plot a graph between (along negative x-axis)
 Find rough focal length of the given convex lens u
by focusing the image of a distant object on the 1
wall. In this case, distance to the image from and (along positive y-axis). It will be a
the convex lens given us the approximate value v
straight line cutting x-axis and y-axis at ' P '
of its focal length  f  .
and ' Q ' respectively..
 Place the optical needle (object needle) on one
side of the lens at a certain distance (lies be- 1
 From the graph, OP  OQ  therefore, the
tween ' f ' and '2 f ' of the convex lens) and the f
image needle on the other side.
1 1
 The image pin is moved such that the image of focal length of convex lens from  graph
the object pin coincides with the image pin. By u v
eliminating parallax error, the distance to the 2
object pin from the lens is noted as object is f 
OP  OQ
distance  u  and the distance between the
Y
convex lens and image pin as image distance
(V) Q

 For different values of u  , find t he

corresponding values of (v) and determine the
1
focal length of given convex lens using the v

uv X
formula f 
P 1 O
u
u v

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EXERCISE - 15 8) An object is placed at a distance of f/2 from a

1) If a lens in made of 3 largers of different re- convex lens where f focal length of the lens.
fractive indices, then number of images of an The image will be
object formed by the lens is equal to
3f
1) 1 2) 2 3) 3 4) 4 1) at , real and inverted
2) A concave mirror has focal length 20cm. Dis- 2
tance between the two positions of the ob- 2) at 2 f , virtual and erect
ject for which the image size is double that of
the size of the object is 3) at 2 f , real and inverted
1) 20 cm 2) 40 cm 3) 30 cm 4) 60 cm 4) at one of the focii, virtual, erect and double
the size
3) A concave mirror of focal length ' f '
9) The focal length of a convex lens is 30cm and
produces an image ' n ' times the size of an
object. If the image formed is real, then the 1
the size of the real image is th of the ob-
distance of object from the mirror is 4
ject. Then the object distance is
 n  1 f 1) 150 cm 2) 90 cm
1)  n  1 f 2)
n 3) 60 cm 4) 30 cm
10) A convex lens is dipped in a liquid, whose re-
n fractive index is equal to the refractive index
3)  n  1 f 4) n  1 f
  of the lens. Then its focal length
1) becomes zero
4) A convex lens of focal length ' f ' produces a
2) becomes infinite
real image ' n ' times the size of object. The 3) remains unchanged
distance of object from the lens is 4) becomes reduced but not zero
f 11) If fV and f R are the focal lengths of a
1) nf 2)
n convex lens for violet and red light respec-
tively. Then
 n  1 f
3) 4)  n  1 f 1) fV  f R 2) fV  f R
n
5) When a convex lens of refractive index 3/2 3) fV  f R 4) fV  f R
and focal length 20 cm is dropped into water 12) An object of height 5m is placed 10cm from a
of refractive index 4/3. Its focal length in wa- convex mirror of radius of curvature 30 cm.
ter is The nature and size of the image formed is
1) 20 2) 40 cm 3) 80 cm 4) 10 cm 1) virtual, erect, behind the mirror, 10 cm in size
6) The minimum distance between an object and 2) virtual, erect, behind the mirror, 3cm in size
its real image formed by a convex lens of fo- 3) real, inverted, infront of the mirror, 10 cm in
size
cal length ' f ' is
4) real, inverted, infront of the mirror, 3cm in
1) f 2) 2 f 3) 3 f 4) 4 f size
7) A convex lens is making full image of an ob- 13) Two objects A and B when placed in turn in
ject. If half of the lens is covered by an front of a concave mirror of radius of
opaque object, then curvature 15cm, give images of equal size. If
1) half the image is not seen ‘A’ is three times the size of ‘B’ and is placed
2) full image is seen with same intensity 30 cm from the mirror, the distance of ‘B’ from
3) full image is seen with decreased intensity the mirror is
4) no image is observed 1) 20cm 2) 15 cm 3) 12.5 cm 4) 9.5 cm

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14) A concave mirror forms a real image 5 times 20) One surface of a lens is convex and the other
the size of the object placed at a distance of is concave, if the radii of curvature are r1 and
20cm from it. The radius of curvature of the
mirror is r2 respectively, the lens will be convex if
100 50 1
1) cm 2) cm 3) 100cm 4) 50cm 1) r1  r2 2) r1  r2 3) r1  r2 4) r1  r
3 3 2
15) A mirror produces on a screen an image of
the sun 2cm in diameter. If the sun’s disc sub- EXERCISE - 15 - KEY
tends an angle 0.1 radian on the surface of 1) 3 2) 1 3) 2 4) 3 5) 3 6) 4
the earth, then the radius of curvature of the 7) 3 8) 4 9) 1 10) 2 11) 1 12) 2
mirror is 13) 2 14) 1 15) 2 16) 4 17) 1 18) 2
1) 20 cm 2) 40 cm 3) 200 cm 4) 400 cm 19) 2 20) 3
16) A small strip of plane mirror ‘A’ is set with its
plane normal to the principal axis of a convex EXERCISE - 15 - HINTS
mirror ‘B’ and placed 10 cm in front of ‘B’
which it partly covers. An object is placed 1) Number of images formed by the lens is equal to
20cm from ‘A’ and the two virtual images number of different media.
formed by reflection in ‘A’ and ‘B’ coincide v
without parallax. The radius of curvature of 2) 2
B is u
1) 20cm 2) 22.5 cm 3) 27.5cm 4) 30 cm v
17) An object is placed in front of a mirror at a 3) n
distance of 60cm. If its two times diminished u
image is formed on the screen, the focal length
v
of the mirror is 4) n
1) 20cm 2) 45 cm 3) 15cm 4) 90 cm u
18) An object is placed on the principal axis of a
convex mirror. Distance of object from the f liq

  g  1 l
5)
mirror is 40cm. A plane mirror is placed be- f air   g  l 
tween the object and the convex mirror, cov-
ering lower half below principal axis of the 1 1 1 v
mirror. Distance between the object and the 8)   and m 
plane mirror is 30cm. If there is no parallax u v f u
between the two images formed by plane mir-
v 1 1 1 1
ror and convex mirror, the focal length of the 9)   u  4v and  
convex mirror is u 4 u v f
1) 20 cm 2) 40 cm 3) 60 cm 4) 80 cm
19) 'U' shaped wire is placed in front of a con- 1 1 1 sizeof theimage v
12)   and 
cave mirror of radius of curvature 20cm as u v f size of the object u
shown.
The total length of the image of the wire M A 1 f  uB f
ABCD is nearly 13)   
MB 3 f f  uA
A D
v
5cm 14) M   5
u
B C
u  20cm; v  100cm ,
10cm 30cm
1 1 1
 
1) 2.5 cm 2) 6 cm f u v
3) 12.5 cm 4) 15 cm
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15) Since the image is real, it is a concave mirror

1 1 1
    v2   15cm
10 v2 30
image
 40
v 1
f Magnification of AB  1  3 
sun
u1 4o 3

arc 2 AB 5
   0.1 rad  A1 B1   cm
radius f 3 3
 f  20cm and R  2 f  40cm v2 15 1
Magnification of CD    cm
16) u  30cm v  10cm u2 30 2
1 1 1 CD 5
  and R  2 f  C1 D1   cm
f v u 2 2
B
Total length of the image of the wire
5 5 5
IA
 A1B1  B1C1  C1D1 ;  3  3  2  6cm
IB
Object A Image
1 1 1 1 1
20) f     1  r  r 
20cm 10cm
 6 r1  r2
 1 2 r1 r2
 v 1 u
17) M    v    30cm
EXPERIMENT - 16
u 2 2
To determine angle of minimum deviation for a
1 1 1
   f  20cm triangular prism by plotting a graph between
f v u angle of deviation and angle of incidence.
18) u  40cm ; v  20cm

1 1 1
 
f v u  f  40cm

M P I
O
i2
D2
20cm 10cm
40cm

19) Focal lengt h of concave mirror

 To perform this experiment, we require
R triangular glass prism, drawing board,
f   10cm chart paper, drawing pins, pencil, scale and a
2
protractor.
for the left arm (AB) of the U - wire, u  40cm
 If ‘A’ is angle of the prism,  m is angle of
1 1 1 40
   v1  cm minimum deviation and refractive index of the
f v u 3 mat erial of t he prism is '  ' then
for the right arm (CD), u2  30cm
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 A  m 
sin  
  2  
 A
sin   
2
m
PROCEDURE
 Fix a white chart paper on a drawing board and 0 i i=e e
i
take 8, sketches of triangular based glass prism,
Draw normals to each and every sketch of the  For every angle of deviation, there will be two
triangle on one side. corresponding values of angles of incidence,
 Using protractor keep angles such as angle of incidence  i  and angle of
300 ;330 ;360 ;390..... from each normal emergence  e  .
respectively and draw lines showing the inci-  When the angle of deviation in the prism is
dent ray.
minimum, then angle of incidence  i  and angle
 Fix two pins P and Q vertically on the line
representing incident ray 2cm apart. of emergence  e  are equal. Therefore angle of
 Place the glass prism in the sketch and by
viewing the two pins from the other side of the refraction  r1  at the first face of the glass prism
prism, fix two more pins R and S such that all is equal to angle of refraction  r2  at the sec-
the four pins are on the same line without paral-
ond face of the prism.
lax.
 From i   graph, the angle of minimum
 Removing the glass prism from the sketch, and
deviation can be determined, and using the
removing the two pins R and S join the two
positions of R and S using a scale and a pencila.  A  m 
This line represents the ray of emergence sin  
 2 
 By extending ray of incidence and ray of formula
 the value of
A
emergence, the angle between the incident ray Sin
2
and the emergent ray called as angle of devia-
refractive index of the material of the prism also
tion   is measured using a protractor.. can be calculated.
 The experiment is repeated in the remaining  For an equilateral triangular glass prism, angle
sketches at different angles of incidence of the prism A  600 .
330 ,360 ,390....... Every time, t he EXERCISE - 16
corresponding angle of deviation is measured. 1) When light falls on a prism, the resultant can
 When graph is plotted taking angle of incidence be
1) inversion 2) magnification
i  on x-axis and the angle of deviation  
3) elongation 4) deviation
on y-axis, we get a parabola which is known as 2) The angular dispersion produced by a prism
i   curve. 1) increases if the average refractive index
 From i   curve, it is observed that as ' i ' increases
2) increases if the average refractive index
increases, the value of ' ' decreases gradually decreases
to a minimum value, beyond which ' ' increases 3) remains constant without depending on
with the increased values of ' i ' . refractive index
4) no relation with average refractive index
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3) When a glass prism is placed in water, the angle 10) If angle of incidence, emergence and
of minimum deviation
deviation are 450 ,550 and 400 then the
1) increases 2) decreases
3) remains same 4) cannot be predicted angle of the prism is
4) If the angle of incidence and angle of re- 1) 550 2) 400 3) 450 4) 600
0
fraction at the first refracting surface are 45 11) A given ray of light suffers minimum devia-
and 300 respectively, then the refractive in- tion in an equileteral prism ‘P’. Additional
dex of the material of the prism is prisms Q and R of identical shape and of the
same material as ‘P’ are now added. The ray
1 1
1) 2 2) 3) 4) will now suffer
2 2 2
5) The angle of minimum deviation of a prism of
refractive index 3 is equal to its refracting P Q R

angle. Then the refracting angle of the prism

is 1) greater deviation
1) 450 2) 600 3) 750 4) 900 2) no deviation
3) same deviation as before
6) A prism of refractive index 2 has 4) total internal reflection
refracting angle 600 . At what angle must a 12) The maximum refractive index of a prism
ray of light be incident on it so that it under- which permits the passage of light through it,
goes minimum deviation ? when the refracting angle of the prism is 900
1) 300 2) 450 3) 600 4) 900 is
7) A certain prism of refracting angle 60 and 0
3 3
of refractive index 2 is immersed in a liquid 1) 3 2) 2 3) 4)
2 2
of refractive index 2 . Then the angle of
minimum deviation will be EXERCISE - 16-KEY
1) 300 2) 450 3) 600 4) 750 1) 4 2) 1 3) 2 4) 2 5) 2 6) 2
7) 1 8) 3 9) 2 10) 4 11) 3 12) 2
8) A prism of refractive index '  ' and angle
‘A’ is placed in the minimum deviation EXERCISE - 16-HINTS
position. If the angle of minimum deviation
is ‘A’, then the value of ‘A’ in terms of '  ' is sin i
4.  
sin r
  2 1 
1    1
1) sin   2) sin  
 A  m 
2  2  sin  
  2  here A  
1   1   5. A m
3) 2cos   4) cos   sin
2 2 2
9) The refracting angle of a prism is ‘A’ and the
refractive index of the material of the prism sin i

 A 6. A
is cot   . The angle of minimum deviation sin
2 2
of the prism is
1)   2A 2)   2A  A  m 
sin  
g  2 
  7. 
l A
3) A 4) A sin
2 2 2
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2A  To perform this experiment, we require a trav-
sin elling microscope, lycopodium powder and three
 2
8. A glass slabs of same material but different thicknesses
sin  A travelling microscope is a compound mi-
2
croscope fitted on a vertical scale and can move
up and down carrying a vernier scale moving along
A  m
sin the main scale.
 2  cot A  The reading of travelling microscope is the re-
9. A 2 sult of main scale and vernier scale measure-
sin
2 ments.
10. i  e  A    When we look into a denser medium standing
in a rarer medium then the refractive index of
1 3 the denser medium with respect to the rarer me-
dium
11. 2 4
realdepth

No deviation occur on interfaces 2 and 3 as there apparent depth
is no change in medium. How ever deviation at
interface ‘4’ is same as on interface 2 with only real thickness of glass slab
=
prism P. apparent thickness of the glassslab
 A  90  PROCEDURE
12.   cos   ,   cos  
2 2  Put the microscope on the table near a window
 2,  max  2 . for getting sufficient light
 By adjusting the horizontal screws on the base,
EXPERIMENT - 17 make the base of the microscope perfectly
To find refractive index of a glass slab using horizontal
travelling microscope  Adjust the eye-piece of the microscope and its
position, so that the cross wires are clearly
visible
Main
Compound
Main
Scale Scale  Determine the vernier constant of the vernier
microscope
scale of the microscope
 Make a cross marked as ‘P’ on the base of the
V
V microscope.
R1
R2  Adjust and focus the microscope on the cross
Vernier
scale marked as ‘P’ and avoid parallax between the
cross-wires and image of the cross ‘P.
P1
 Note down the main scale reading and vernier
scale reading  R1  on the vertical scale.
Main  Keep a glass slab of thickness ‘t’ on the cross
Scale
‘P’. Now due to refraction of light the cross
marked as ‘P’ looks as if it is shifted up to ' P1 '
V
a little.
R3  Move the microscope further upwards and
focus the image of P1 , and note the reading on
P1 S
the vertical scale of the microscope as ' R2 ' .

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 Now sprinkle few particles of lycopodium 7) In a travelling microscope, focal length of ob-
powder on the surface of the slab. jective is
 By moving the microscope further up, focus the ly- 1) greater than focal length of eye - piece
copodium particles with cross wires and note the 2) smaller than focal length of eye - piece
reading on the vertical scale as R3 . 3) equal to the focal length of eye - piece
 Now the refractive index '  ' of the slab can be 4) zero
determined by the formula 8) In a travelling microscope, the final image is
formed at
R R
 3 1 1) infinity
R3  R2 2) at the focus of eye - piece
EXERCISE - 17 3) at the focus of objective
1) As light enters from air into glass slab, its 4) at least distance of distinct vision from the
wavelength eye - piece
1) increases 9) In a travelling microscope 49 main scale divi-
2) decreases sions coincide with 50 vernier scale divi-
3) remains constant sions. The least count of microscope when
4) may increase or decrease one main scale division equals 0.5mm is
2) Travelling microscope is used for 1) 0.01 cm 2) 0.001 cm
1) determination of focal length of convex mir-
3) 0.002 cm 4) 0.02 cm
ror
2) determination of focal length of convex lens 10) If ‘t’ is the real thickness, '  ' is refractive
3) determination of refractive index of a prism index of a glass slab then the shift of the im-
4) determination of refractive index of glass slab age with reference to the object is given by
3) Refractive index of a medium depends on
1) wavelength  1
2) frequency 1) t  
1   2) t 1   
 
3) surrounding medium
4) size of the medium
4) The absolute refractive index of a medium
1 
3) t    1 4) t   1
other than air is always  
1) less than unity 11) A ray of light passes normally through a slab
2) equal to unity
3) more than unity   1.5 of thickness ‘t’. If the speed of light
4) may be more or less than unity in vaccum be ‘c’, then time taken by the ray
5) The refractive index of a material will be less to go across the slab will be
than unity when
t 3t 2t 4t
1) material is placed in optically rarer medium 1) 2) 3) 4)
2) material is placed in optically denser medium c 2c 3c 9c
3) material is placed in vaccum 12) A ray of light incident on a transparent block
4) material is placed in air at an angle of incident 600 . If the refractive
6) If V1 and V2 are velocities of light in two dif- index of the block is 1.732, the angle of de-
ferent media, then the ratio of wavelengths viation of the refracted ray is
1 1) 150 2) 250 3) 300 4) 450
of light in the same media 
2 EXERCISE - 17 - KEY
V1 V2 V1 1) 2 2) 4 3) 1&3 4) 3 5) 2 6) 1
1)
V2
2)
V1
3) V1V2 4)
V2 7) 2 8) 4 9) 2 10) 2 11) 2 12) 3

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EXERCISE - 17 - HINTS  In forward bias, electrons move towards p

- region and holes move towards n- region. Thus
valueof 1MSD the junction diode conducts electricity in forward
9) least count = bias.
number of VSDs
 When the applied voltage is greater than the
 x 3 x 3t barrier voltage, then the diode conducts
11) t '    electricity
c 2c 2c
 Germanium diode needs 0.3V and silicon diode
sin i sin 60 needs 0.7V nearly to just conduct electricity
12)   i  r  3
sin r sin r .  In reverse bias p - end of p - n junction diode is
connected to negative terminal of the battery and
r  300   60  30  300 . n - end is connected to positive terminal of the
EXPERIMENT - 18 battery.
To draw characteristic curves of a p - n junction  In reverse bias, majority carriers which are
diode in forward and reverse bias electrons in the n - region flow into the positive
of the battery which is the high potential area,
Potential leaving a positive charge near the deflection
devider layer. The electrons from the negative of the
  A battery flow into p - region leaving negative
P n   charge near the depletion layer. Thus the deple-
 tion layer increases and the potential barrier
 increases.
V
  In reverse bias, the minority carriers contribute

some flow of current as they are forward bi-
() ased. This current is called leakage current.
 As temperature increases, leakage current
forward biased p - n junction diode increases and it is in the order of few
microampere in germanium and few
Potential nanoammpere in silicon diodes.
devider  When the applied voltage increases gradually,
  at a particular voltage, breakdown occurs and
A
P n   suddenly the current increases due to formation
 of more number of electron - hole pairs. This
 voltage in the reverse bias is called break down
V voltage. At this stage, the junction is damaged.

 PROCEDURE
() (i) Forward - biased p - n junction diode
 Make the circuit as shown for forward bias of p
reverse biased p - n junction diode - n junction diode.
 In forward bias, p - end of p - n junction diode  Find the least count and zero error (if any) of
is connected to positive terminal of the battery voltmeter and milliammeter.
and n - end is connected to negative terminal of  Bring contact of potential divide (rheostat) near
the battery. In forward bias, the electrons which negative end and insert the key (k). Initially
are the majority charge carriers in n - region are voltmeter and milliammeter give zero reading.
at negative potential and the holes which are the  Move the contact a little towards the positive
majority carriers in p - region are at posi- end to apply a forward - biased voltage of 0.1V.
tive potential. By increasing this voltage gradually, the
corresponding currents are to be noted.

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(ii) Reverse - biased p - n junction diode 5) In a junction diode, the direction of diffusion
 Make the circuit as shown for reverse bias of current is
p - n junction diode. 1) from n - region to p - region
 Bring contact of potential divider (rheostat) near 2) from p - region to n - region
positive end and insert the key (k). Voltmeter 3) from n - region to p - region if the junction is
and microammeter give zero reading. forward biased and vice - versa if it is reverse
 Move the contact towards negative end to biased
apply a reverse - biased voltage of 0.5V then a
4) from p - region to n - region if the junction is
feebly reverse current starts flowing. By
reverse biased and vice - versa if it is reverse
increasing this voltage the corresponding cur-
rents are to be noted until the current increases biased.
suddenly representing reverse break down stage. 6) Resistivity of a semiconductor depends on
Note the current and pluckout the key. 1) shape of semiconductor
 If voltage is taken along x - axis and the 2) atomic nature of semiconductor
corresponding current along y - axis and plot a 3) length of semiconductor
graph, it is called v - i characteristic curve of 4) shape and atomic nature of semiconductor
p - n junction diode. 7) In V - i characteristics of p - n junction in
If reverse biasing results in
1) leakage current
2) the current which cannot be neglected
Vr 0 Vf 3) no flow of current 4) large current
8) In the middle of the depletion layer of a
reverse biased p - n junction diode
Ir
1) the potential is zero
 In the forward bias, the voltage where the 2) the electric field is zero
current starts increasing rapidly is called knee
3) the electric field is maximum
voltage.
4) the potential is maximum
EXERCISE - 18 9) In a p-n junction diode having depletion layer
1) If a full wave rectifier circuit is operating from of thickness 106 m , the potential across it is
50 Hz mains, the fundamental frequency in the
ripple will be 0.1V. The electric field produced is
1) 25 Hz 2) 50 Hz 3) 70.7 Hz 4) 100 Hz 1) 107 Vm1 2) 106 Vm1
2) Avalanche breakdown in a semi conductor di-
ode occurs when 3) 105Vm1 4) 105Vm1
1) the potential barrier becomes zero 10) In an unbiased p - n junction diode electric
2) the forward current exceeds a certain value field at the junction is of the order of
3) forward bias exceeds a certain value
1) 10Vm 1 2) 106 Vm 1
4) reverse bias exceeds a certain value
3) On increasing the reverse voltage in a p - n 3) 106 Vm 1 4) 0.1Vm 1
junction diode the value of reverse current
will be 11) The resistance of an ideal p - n junction
1) increased gradually 2) increased suddenly diode in forward biased condition is
3) constant 4) decreased gradually 1) zero 2) infinite
4) Change in temperature 3) negative 4) finite
1) increases forward resistance 12) The value of current if diode is ideal is
2) decreases forward resistance 3 1V
3) affects v - i characteristics of p - n junction 4V
diode
1) 0 2) 1 amp
4) does not affect v- i characteristics of p - n
junction diode. 3) 1.66 amp 4) 15 amp

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13) The resistance of reverse biased p - n 21) The resistance of the diode in forward bias
junction diode is about condition is 20 and infinity in the reverse
biased condition. The current in the circuit is
1) 1 2) 102  3) 103  4) 106 
80
14) In reverse biased condition, the width of deple-
tion layer
1) increases 2) decreases 3) remains same  
6V 2V
4) first increases and then decreases  

15) In a p - n junction diode, the barrier

potential opposes diffusion of 1) 0.08A 2) 0.1A 3) 0.04 A 4) zero
1) free electrons from n - region
EXERCISE - 18- KEY
2) holes from p - region
3) majority charge carriers from both the regions 1) 4 2) 4 3) 2 4) 3 5) 2 6) 2
4) minority charge carriers from both the regions 7) 1 8) 2 9) 3 10) 3 11) 1 12) 2
16) The potential barrier in the depletion layer is 13) 4 14) 1 15) 3 16) 1 17) 2 18) 3
due to 19) 1 20) 3 21) 3
1) ions 2) electrons EXERCISE - 18 - HINTS
3) holes 4) forbidden band
17) Conductivity of a semiconductor increases 9) V
E
when a radiation of wavelength is less than d
2480nm is incident on it. The forbidden gap V 4 1
is 12) i   1 amp
R 3
1) 0.5 J 2) 0.5 eV 3) 1 eV 4) 2 eV
18) Which of the following diodes is forward bi-  12400 
ased ? 17) energy   0
eV
  in A 
1) 2) 20) diode is reversely biased
9V 5V V V
V
21) i 
R
3) 4)
5V V V EXPERIMENT - 19
2V
Draw the characteristic curve of Zener diode
and to determinate its reverse breakdown
19) Which of the following diodes is reverse bi-
voltage.
ased ?
Rin IL
1) 2) A
3V V V V  Iin Iz

RL
V
3) 4)  V Vin Vout
V V 
V 3V
20) In the figure shown, current passing through  To perform this experiment, we require a Zener
the diode is
diode VZ  6V  , a 10V batt ery, a high
A 30 B
resistance rheostat, voltmeter, milliammeter, a
3V 0V
1) 0.1 A 2) 0.02 A 20 resistance, one-way key and connecting
3) zero 4) 0.01 A wires.
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 Zener diode is a very highly doped p - n junction

 Plot a graph between input voltage Vin  and
diode. This heavy doping results in a low value
of reverse breakdown voltage. output voltage Vout  along x-axis and y-axis
 The reverse breakdown voltage of a Zener diode
respectively. The shape of the graph is as shown.
is called Zener voltage VZ  . The reverse
current that results after the breakdown is called
Zener current  iZ  .
Vout
 From the circuit iin  iL  iZ
where iin  input current (total current in the
0 Vin
circuit)
iZ  current through Zener diode  When a graph is plotted between voltage taken
iL  current through load resistance  RL  on x-axis and current taken along y-axis for a
Zener diode, we get a graph as shown.
 Output voltage or Zener voltage
Vout  or VZ  Vin  Riniin Forward
bias
 or  Vout  RLiL i
Vz
 Initially as Vin increases, iin increases a little
0 V
then Vout increases at breakdown
Vout  Vin  Rin iin
 This constant value of Vout which is reverse
Here VZ represents output voltage or Zener
breakdown voltage is also called Zener Voltage.
voltage.
PROCEDURE  In forward bias, Zener diode works just similar
 Connect the circuit as shown to an ordinary p - n junction diode.
 Adjust the potential divider (Rheostat) near  In reverse bias, Zener diode works very
negative end. effectively.
 Move the contact a little towards positive end EXERCISE - 19
to apply some reverse biased voltage Vin  . 1) Zener diode can be used as
Initially milliammeter reads zero. 1) half - wave rectifier
 As Vin is further increased, iin starts flowing. 2) oscillator
3) voltage regulator
Then Vout becomes less than Vin . Note the 4) transformer
values of Vin ; iin and Vout 2) Zener break down will occur if
1) impurity level is low
 Go on increasing Vin in small steps of 0.5V and 2) impurity level is high
note down the corresponding values of iin and 3) impurity is less in n-side
4) impurity is less in p-side
Vout . 3) Zener diode is used for
 At one stage, as Vin is increased further, iin 1) rectification
2) stabilization
increases by large amount and Vout does not
3) amplification
increase. This is reverse breakdown situation. 4) producing oscillations in an oscillator

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4) A Zener diode when used as a voltage regulator EXERCISE - 19 - KEY
is connected in 1) 3 2) 2 3) 2 4) 2 5) 2 6) 3
i) forward bias 7) 2 8) 2 9) 3 10) 1
ii) reverse bias
iii) parallel with the load resistance EXERCISE - 19 - HINTS
iv) series with the load resistance
1) i and ii only are correct V 50
9) IL   3
 5  103 A  5 mA
2) ii and iii only are correct RL 10  10
3) only i is correct
for 80 V VS  30 V
4) only iv is correct
5) Avalanche breakdown in a semiconductor
diode occurs when VS 30
IS    6 mA
1) forward current exceeds certain value RS 5  103
2) reverse bias exceeds a certain value
3) forward bias exceeds a certain value  I Z  1 mA (minimum current)
4) the potential barrier is reduced to zero for 120 V VS  70 V
6) The sharp range of breakdown voltage in
Zener diode is VS 70
IS    14 mA
1) 0.1 to 10 V 2) 1 to 20V RS 5  103
3) 0.05 to 0.1 V 4) 20 to 200 V
 I Z  14  5  9 mA (maximum current)
7) Zener diode will function more effectively in
1) forward bias 10) VS  120  90  30 V
2) reverse bias
EXPERIMENT - 20
3) both forward and reverse bias
4) neither forward nor reverse bias To draw the charact eristic curves of a
8) In the breakdown region, Zener diode behaves Transistor and finding current gain and voltage
as a gain.
1) constant current source  ib 
2) constant voltage source A

3) constant resistance source  ib C
A b 
4) constant power source 
e V Vce 
 np n 
9) The maximum and minimum values of zener
()
transistor K2
V Vbe
Rh1 
diode current are 
()

K1
5k IL
IZ
 To perform this experiment, we require one
80  120V
50v 10k n - p - n transistor, a 3V battery, a 30V battery,
two high resistance rheostats, one voltmeter
1) 6 mA, 5 mA 2) 14 mA, 5 mA  0  3V  , one ammeter  0  500mA , one
3) 9 mA, 1 mA 4) 3 mA, 2 mA
10) In the figure shown the potential drop across voltmeter  0  30V  , two one - way keys and
the series resistor is connecting wires
2k  An n - p - n transistor has one p - type wafer in
between two n - type wafers.
120V  In common emitter circuit of transistor,
20k
90v emitter - base makes input section and collector
- emitter makes output section.
1) 30 V 2) 60 V 3) 90 V 4) 120 V
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 The emitter -base circuit is forward biased and PROCEDURE

collector - base circuit will be reverse biased.
 Make the connections as shown in the circuit and
 Resistance offered by base junction is called
bring the movable contact of rheostat to be minimum
input resistance  Ri  and it has low value due so that voltmeters show zero reading
to forward biasing. INPUT CHARACTERISTICS
 Resistance offered by collector junction is called
 Apply forward - biased voltage at the emitter -
output resistance  R0  and it has high value due base junction. Note the base - emitter
to reverse biasing.
voltage Vbe  and the base current  ib  keeping
 Due to high output resistance a high resistance
is used as load resistance  RL  collector - emitter voltage Vce  constant at
 The ratio of output resistance to input resistance 0.2V. The voltage Vbe  should be increased by
is called as resistance gain.
steps of 0.2V and corresponding values of ib
 The ratio of change in collector current  ic 
are noted.
to the change in base current  ib  gives the Vce=0.2V Vce=0.4V
current gain in common emitter configuration.
ib
i
  c
ib
0 Vbe
 The product of current gain and resistance gain
is known as voltage gain of a transistor. It is
about 50 times the resistance gain. OUTPUT CHARACTERISTICS
 Input resistance  Keep the collector voltage zero. Make all
readings zero.
 V 
Ri   be   Make the base current ib  25 A by adjusting
 ib Vce constant base voltage. You will be able to read even
Output resistance same collector current although the collector
voltage is zero.
 V   Increase the collector voltage by steps of 0.2V
R0   ce 
 ic  ib constant and note the corresponding collector currents
Ib= 75A
R0
Resistance gain  Ib= 50A
Ri Ic
Ib= 25A

 ic 
Current gain     0 Vce
 ib Vce constant
Voltage gain = TRANSFER CHARACTERISTICS
(current gain) (resistance gain)
 Make the collector - emitter voltage Vce  2V
R 
 0 by moving the sliding contact of Rheostat  Rh2 
 Ri 
 Keep the base current ib at 100 A , by changing

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Vbe record the collector current ic in the collector 7) In an n - p - n transistor the collector current is
24 mA. If 80% of electrons reach the
circuit.
 Repeat the above steps with base currents collector, its base current is
1) 35 mA 2) 25 mA
200  A,300  A.... keeping Vce constant at 2V.. 3) 15 mA 4) 6 mA
V = 2V
8) A transistor is used in common - emitter
ce

configuration. Given its   0.9 . The change

i
c
in collector current when the base current
changes by 2mA is
1) 0.9mA 2) 18 mA
3) 20 mA 4) 0.1 mA
bi 9) Transistor acts like
1) oscillator
EXERCISE - 20 2) amplifier
1) The number of depletion layers in a transistor 3) both as oscillator and amplifier
is 4) a rectifier
1) 1 2) 2 3) 3 4) 4 10) In common emitter transistor, the input
2) An n - p - n transistor conducts when resistance is 200 and bad resistance is
1) collector is positive and emitter is negative
40 k . If current gain is 80 then voltage gain
with respect to base
2) collector is positive and emitter is at same is
potential as the base 1) 16 2) 160 3) 1600 4) 16000
3) both collector and emitter are negative with 11) Transistor means transfer of
respect to the base 1) current 2) voltage
4) both collector and emitter are positive with 3) resistance 4) all of these
respect to the base 12) In a transistor the region which is heavily
3) A transistor has a base current of 1 mA and doped is
emitter current 100 mA. The current transfer 1) emitter 2) base
ratio will be 3) collector 4) all the three regions
1) 0.9 2) 0.99 3) 1.1 4) 10.1 13) Transistor amplifier circuit with a feed back
4) The relation between  and  of a transistor circuit is called
is 1) oscillator 2) detector
1)     1 2)     1 3) modulator 4) rectifier

3)    (1   ) 4)    (   1) 14) The value of current gain   in common base

5) The voltage gain of a transistor is higher in configuration is
the configuration of 1)  1 2)  1 3)  1 4)  1
1) common emitter
15) The value of amplification factor    in
2) common base
3) common collector common emitter configuration is
4) all the three (1, 2, and 3) 1)  1 2)  1 3)  1 4)  1
6) At the base emitter junction of a transistor
EXERCISE - 20 - KEY
one finds
1) forward bias 1) 2 2) 3 3) 2 4) 3 5) 3 6) 4
2) narrow depletion layer 7) 4 8) 2 9) 3 10) 4 11) 3 12) 1
3) low resistance 13) 1 14) 2 15) 4
4) all the three (1, 2 and 3)
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EXERCISE - 20 - HINTS  A resistor, a capacitor, a diode and an LED are

two terminal devices. For their identification
IC the following facts are used.

3) I e , I e  Ib  I c i) A transistor is a two terminal device. It
conducts both with DC and AC voltage. Further
 80  a resistor offers same resistance to the current
7) ic  24mA    ie even when battery terminals are reversed.
 100 
ii) A capacitor is a two terminal device which
ic ic does not conduct with DC voltage applied either
8)   0.9  way. However it conducts with AC voltage.
ie ic  ib iii) A diode is a two terminal device that
10) voltage gain = conducts only when it is forward biased.
(current gain) (resistance gain) iv) An LED is also a two terminal device which
conducts and emits light only when it is forward
EXPERIMENT - 21 biased.
Identification of Diode; LED; Transistor : IC: PROCEDURE
Resistor : Capacitor from mixed collection of
1) INTEGRATED CIRCUIT (IC): From t he
such items. collection of given items, pick the one having
more than three legs (pins). It is an IC which
consists of more than three i.e., 8, 10, 14 and 16
Electrolytic
p q r s legs. It has a component of a cylindrical shape
capacitor
with metal casing or made of flat back chip.
Siver
Ring
2) TRANSISTOR : Pick the item which has three
P n legs. It is a transistor.
Carbon resistor
integrated Circuit  All the other remaining items are two - terminal
Junction Diode devices. These items can be distinguished from
each other by using a multimeter as an ohmmeter.
 Set the multimeter in continuity test mode or
resistance measurement mode.
3) RESISTOR: A resistor will show same value
of resistance on the multimeter even when current
Black
is reversed.
dot 4) CAPACITOR: A capacitor does not show any

continuity as it blocks DC even when the current
Mica capacitor
p n e c through it is reversed. However a damaged or
LED b
Transistor
short - circuited capacitor will show almost zero
resistance in most of the cases
 We require fixed collection of items like LED, 5) DIODE: A diode will show a small value of
transistor, capacitor, resistor, p - n junction diode resistance when it is forward biased and very
etc., to perform this experiment. high resistance when it is reverse biased.
 The identification of different items from a mixed 6) LED: When its p - lead is connected to positive
collection depends on their appearance and terminal and n - lead to common terminal gives
working. out faint light and when its connections are
reversed, a very high resistance is shown by the
 An integrated chip (IC) is in the form of a chip
multimeter and there is no emission of light.
with flat back and has multiple terminals, say 8
or more. Therefore it can be easily identified. EXERCISE - 21
However there are ICs UM-66 and 77 series 1) A multimeter is a device which cannot be used
which have only three pins. as
 A transistor is a three terminal device that can 1) an ammeter 2) a voltmeter
be identified by just appearance. 3) an ohmmeter 4) a magnetometer

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2) An LED operates under the condition of i) IDENTIFICATION OF BASE OF A
1) reverse bias TRANSISTOR:
2) forward bias  The collector lead of a transistor is identified
3) both in forward and reverse bias from the fact that it lies on the outer side and is
4) no biasing. far from the other two leads (emitter and base)
3) Which of the following is not a two legged which are situated close to each other.
device ?  In order to identify the base of the transistor touch
1) resistor 2) capacitor the two probes of the multimeter to the extreme
3) p - n junction diode 4) integrated circuit two legs of the transistor. Note whether the
4) Which of the following is not used in making resistance between the two legs is low or high.
LEDs ? Now interchange the probes and again note
1) Ga As 2) Cd S 3) Ga P 4) Ga As P whether the resistance is low or high.
5) Silicon and Germanium p - n junction diodes  If the resistance is high in both the cases, the
are not used for making LEDs central leg of the transistor is base and the two
1) as their energy band gap is very large ext reme legs are emitter and collector
2) as their energy band gap is very small respectively. It is because emitter - collector
3) as greater percentage of energy is in the form junction - offers high resistance in both the
of heat directions.
4) as there is no energy gap in them  If the resistance is low in one direction and high
6) The main precaution while connecting LED in the other direction, then one of the two extreme
is legs of the transistor is base.
1) it should always be reverse biased ii) DISTINGUISH BETWEEN n - p - n AND p -
2) it should always be forward biased n - p TRANSISTORS
3) it should never be reverse biased  After identifying the base of the transistor
4) none of these connect negative terminal of multimeter to base
7) Which of the following is an active component and positive terminal of multimeter to any other
? terminal out of the emitter and collector. If it
1) resistor 2) capacitor gives reading in the multimeter it is p - n - p
3) transistor 4) inductor transistor.
8) In case of an IC, the pin number is counted  If no reading is observed, then it is n - p - n
with respect to a tap provided on it transistor.
1) clockwise 2) anticlockwise iii) TO SEE UNIDIRECTIONAL FLOW OF
3) alternately 4) diagonally CURRENT IN THE CASE OF A DIODE AND
9) Multimeter used for AC measurement of LED:
1) bridge rectifier 2) p - n -p transistor  A p - n junction diode and an LED (light emitting
3) n - p - n transistor 4) LDR diode) conduct only when forward biased and
10) Which of the following devices work on AC do not conduct when reverse biased.
as well as DC ?  The LED when forward biased not only conducts
1) LED 2) resistor but also emits light which helps us to distinguish
3) diode 4) capacitor between junction diode and LED.
 Connect the two probes of a multimeter to the
EXERCISE - 21-KEY two end terminals of the junction diode and note
1) 4 2) 1 3) 4 4) 2 5) 3 6) 3 whether resistance is low or high. Then
7) 3 8) 2 9) 1 10) 2 interchange the two probes and again note the
resistance whether it is high or low.
EXPERIMENT - 22  If the resistance of the diode is high in the first
Using multimeter to (i) identify base of transistor case, then it will be low in the second case or
(ii) distinguish between n - p - n and p - n - p vice-versa. It shows the unidirectional flow of
transistors (iii) see the unidirectional flow of current in junction diodes.
current in case of a diode and an LED and (iv)  For LED also repeat the above two steps. The
check the corrections or otherwise of a given LED glows by emitting light when its resistance
electronic component (diode, transistor or IC) is low and it does not glow when its resistance
 To perform this experiment, we require diode, is high. This shows unidirectional flow of
transistor, LED, IC and a multimeter. current through LED.

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 EXPERIMENTAL PHYSICS JEE-ADV PHYSICS- VOL- VI
iv) CHECKING A DIODE OR TRANSISTOR 2) The arrow in a given transistor indicates
OF IC IN WORKING MODE: 1) direction of flow of electrons
 A forward biased diode offers low resistance. 2) direction of flow of holes
3) both the directions of flow of holes and
Most of the multimeters now- a-days have a electrons
diode testing option, marked by the diode 4) neither the direction of flow of holes nor of
symbol. electrons
 To check a p - n junction diode connect the 3) The correct relation between current gain,
positive lead to p - connection and negative lead resistance gain and power gain is
to n-connection, a low resistance must be 1) power gain = (current gain) (resistance gain)
observed. Reversing the terminals, high 2) power gain = (current gain)2 (resistance gain)
2
resistance must be observed. If these are not  current gain 
observed, then the p-n junction diode is a 3) power gain =
damaged one.
 resistance gain 
4) power gain = (current gain) (resistance gain)2
 To check a transistor first identify the three pins.
4) Digital multimeters use the following
Connect the multimeter leads to emitter end base
component for display
pins. Note the state of conduction. 1) transistor 2) p - n junction diode
 Note t he state of conduction even by 3) LED 4) all of these
interchanging the leads. If there is lot of5) Multimeter is used as a voltmeter when
difference in the resistance, then connect the 1) low resistance is connected in parallel to a
multimeter leads to base and collector pins. galvanometer
2) high resistance is connected in parallel to a
 If the resistance of base - emitter junction and galvanometer
base - collector junction are low in one direction
3) low resistance is connected in series to a
and high in the other direction, then the givengalvanometer
transistor is in working order. 4) high resistance is connected in series to a
 In case if it shows low resistance in both the galvanometer.
6) In electronic industry, now-a-days Carbon
directions, then the transistor is a damaged one.
resistors gaining popularity have percentage
IDENTIFICATION OF TERMINALS OF AN IC accuracy as
 The terminals of an IC are commonly known as 1) 20% 2) 10% 3) 5% 4) 2%
pins. 7) Carbon resistors commonly used in electronic
 The pin configuration is according to circuits are made of
manufacturer’s choice. 1) copper and carbon 2)magnesium and carbon
 However the pin number can be identified by 3) carbon and clay 4) carbon and constantan
using the following procedure. 8) When a multimeter is connected to a
transistor, it conducts when
a) Some of the ICs such as voltage regulator ICs
1) base - emitter is forward biased
(IC-7805) and tone generator ICs (UM-66) have 2) base - collector is forward biased
only three pins. 3) base - emitter is reverse biased
b) The multiple ICs like IC-555 come in two 4) base - collector is reverse biased
9) A digital multimeter when used as a continuity
packages. There is a cut, dot or a tab from which
tester
the pin number is to be counted in anticlockwise
direction. 1) it is put in the lowest resistance range
2) it is put in the highest resistance range
EXERCISE - 22 3) it gives a beep 4) it will be put off
10) A digital multimeter consists of the following
1) Which is not the function of analog component
multimeter? 1) an amplifier 2) analog to digital converter
1) to identify the base of a transistor 3) numeric / a - numeric digital display
2) to identify the terminals of an IC 4) all the above
3) to measure the temperature gradient EXERCISE - 22 - KEY
4) to check whether the given electronic 1) 3 2) 2 3) 2 4) 3 5) 4 6) 4
component is in working order or not 7) 3 8) 1 9) 3 10) 4

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