BSP 373

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type VDS ID RDS(on) Package Marking

BSP 373 100 V 1.7 A 0.3 Ω SOT-223 BSP 373

Type Ordering Code Tape and Reel Information

BSP 373 Q67000-S301 E6327

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 28 °C 1.7
DC drain current, pulsed IDpuls
TA = 25 °C 6.8
Avalanche energy, single pulse EAS mJ
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω
L = 23.3 mH, Tj = 25 °C 45
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TA = 25 °C 1.8

Semiconductor Group 1 Sep-12-1996

 BSP 373

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1) RthJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C 100 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 100 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 1.7 A - 0.16 0.3

Semiconductor Group 2 Sep-12-1996

 BSP 373

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A 1.5 2.8 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 400 550
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 125 190
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 70 105
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω - 10 15
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω - 30 45
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω - 85 115
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω - 60 80

Semiconductor Group 3 Sep-12-1996

 BSP 373

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - 1.7
Inverse diode direct current,pulsed ISM
TA = 25 °C - - 6.8
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 1.7 A, Tj = 25 °C - 0.8 1.1
Reverse recovery time trr ns
VR = 30 V, IF=lS, diF/dt = 100 A/µs - - -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS, diF/dt = 100 A/µs - - -

Semiconductor Group 4 Sep-12-1996

 BSP 373

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 10 V

2.0 1.8

W
A

Ptot 1.6 ID
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8

0.6
0.6

0.4
0.4

0.2 0.2

0.0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Transient thermal impedance

parameter : D = 0, TC=25°C Zth JA = ƒ(tp)
parameter: D = tp / T

10 2
K/W

10 1

ZthJC
10 0

10 -1

D = 0.50
10 -2
0.20
0.10
10 -3 0.05
single pulse 0.02

10 -4 0.01

10 -5
-8 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10 10 s 10
tp

Semiconductor Group 5 Sep-12-1996

 BSP 373

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs parameter: tp = 80 µs, Tj = 25 °C

3.8 lj 0.9
k a b
Ptotih
g = 2W
f
ed c
A
Ω
3.2 VGS [V]

ID a 4.0 RDS (on) 0.7

2.8 b 4.5
c 5.0
b 0.6
d 5.5
2.4
e 6.0
f 6.5 0.5
2.0
g 7.0
h 7.5 0.4
1.6 i 8.0
j 9.0
0.3
1.2 k 10.0
a c
l 20.0
0.8 0.2 d
l ikegjh f
VGS [V] =
0.4 0.1 a b c d e f g h i j k l
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.4 0.8 1.2 1.6 2.0 A 2.8
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,

6.5 4.5

A
S
5.5
ID gfs 3.5
5.0

4.5
3.0
4.0

3.5 2.5

3.0 2.0
2.5
1.5
2.0

1.5 1.0

1.0
0.5
0.5
0.0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 1.0 2.0 3.0 4.0 A 6.0
VGS ID

Semiconductor Group 6 Sep-12-1996

 BSP 373

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 1.7 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.75 4.6
Ω V 98%
0.65 4.0
RDS (on)0.60 VGS(th)
3.6
0.55
3.2 typ
0.50
0.45 2.8

0.40 2.4
98% 2%
0.35
2.0
0.30
0.25 1.6
typ
0.20 1.2
0.15
0.8
0.10
0.4
0.05
0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 1 10 1

nF A
C IF

10 0 10 0

Ciss

10 -1 Coss 10 -1
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -2
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 Sep-12-1996

 BSP 373

Avalanche energy EAS = ƒ(Tj ) Drain-source breakdown voltage

parameter: ID = 1.7 A, VDD = 25 V V(BR)DSS = ƒ(Tj)
RGS = 25 Ω, L = 23.3 mH

50 120
V
mJ
116
EAS 40 V(BR)DSS114
112
35
110
30 108
106
25
104
20 102
100
15
98
10 96
94
5
92
0 90
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Safe operating area ID=f(VDS)

parameter : D = 0.01, TC=25°C

Semiconductor Group 8 Sep-12-1996

 BSP 373

Package outlines
SOT-223
Dimensions in mm

Semiconductor Group 9 Sep-12-1996