Microwave Attenuators

Prof. Girish Kumar

Electrical Engineering Department
IIT Bombay

gkumar@ee.iitb.ac.in
prof.gkumar@gmail.com
(022) 2576 7436
Resistive Attenuator ( - Network)

Microwave Theory and Techniques | Prof. Girish Kumar, IIT Bombay 2

Resistive Attenuator ( - Network)

k (dB) 3 10 20
k 1.41 3.16 10
R1 (Ω) 17.5 71.1 247.5
R2 (Ω) 293.9 96.3 61.1
Microwave Theory and Techniques | Prof. Girish Kumar, IIT Bombay 3
 - Network: Second Approach


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Resistive Attenuator (T - Network)

k (dB) 3 10 20
k 1.41 3.16 10
R1 (Ω) 8.51 25.96 40.91
R2 (Ω) 142.7 35.17 10.1
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 Variable Attenuator using PIN Diodes
P I N

where, w = width of the i-th layer, ap= ambipolar

mobility,  = Lifetime of carriers, Io = DC bias current
Note: Input impedance of the variable attenuator should
remain matched over its operating frequency range. V
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Variable Attenuator using Coupler

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 Variable Attenuator using MESFET

Attenuation Frequency Range

Dynamic Range (dB) (GHz)
12 2 - 18
17 2 - 12

By varying voltages V1 and V2, the value of resistance varies from

small Ron to large Roff when the gate voltage reaches pinch-off voltage.
S11 is better than 10dB and minimum Insertion loss = 2dB.
Disadvantage: As resistance changes with the voltage, the input
impedance may not be matched.
Microwave Theory and Techniques | Prof. Girish Kumar, IIT Bombay 8
 Variable Attenuator IC

Frequency Range:
DC to 2.5 GHz
IL = 3.5 dB
Pin = 21 dBm max.

MAAVSS0006 is fabricated using 1-micron GaAs MESFET process.

Price: Rs. 100 to 150 depending upon quantity from www.mouser.in
Microwave Theory and Techniques | Prof. Girish Kumar, IIT Bombay 9