PD - 97100B

PDP SWITCH IRFP4332PbF

Features
l Advanced Process Technology
Key Parameters
l Key Parameters Optimized for PDP Sustain, VDS min 250 V
Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V
l Low E PULSE Rating to Reduce Power RDS(ON) typ. @ 10V 29 m:
Dissipation in PDP Sustain, Energy Recovery
TJ max 175 °C
and Pass Switch Applications
l Low Q G for Fast Response

l High Repetitive Peak Current Capability for

Reliable Operation D D

l Short Fall & Rise Times for Fast Switching

l175°C Operating Junction Temperature for

Improved Ruggedness S
G D
l Repetitive Avalanche Capability for Robustness G

and Reliability
S TO-247AC

G D S
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 57 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40
IDM Pulsed Drain Current c 230
IRP @ TC = 100°C Repetitive Peak Current gh 120
PD @TC = 25°C Power Dissipation 360 W
PD @TC = 100°C Power Dissipation 180
Linear Derating Factor 2.4 W/°C
TJ Operating Junction and -40 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw x
10lb in (1.1N m) x N
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case f ––– 0.42
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient f ––– 40

Notes  through † are on page 9

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IRFP4332PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 170 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 29 33 mΩ VGS = 10V, ID = 35A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 250V, VGS = 0V
––– ––– 200 µA VDS = 250V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 100 ––– ––– S VDS = 25V, ID = 35A
Qg Total Gate Charge ––– 99 150 nC VDD = 125V, ID = 35A, VGS = 10V e
Qgd Gate-to-Drain Charge ––– 35 –––
tst Shoot Through Blocking Time 100 ––– ––– ns VDD = 200V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.3µF, VGS = 15V
––– 520 –––
EPULSE Energy per Pulse µJ VDS = 200V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
––– 920 –––
VDS = 200V, RG= 5.1Ω, TJ = 100°C
Ciss Input Capacitance ––– 5860 ––– VGS = 0V
Coss Output Capacitance ––– 530 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz,
Coss eff. Effective Output Capacitance ––– 360 ––– VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance ––– 5.0 ––– Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance ––– 13 ––– from package G

and center of die contact S

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 210 mJ
EAR Repetitive Avalanche Energy c ––– 36 mJ
VDS(Avalanche) Repetitive Avalanche Voltagec 300 ––– V
IAS Avalanche Currentd ––– 35 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ TC = 25°C Continuous Source Current ––– ––– 57 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current ––– ––– 230 integral reverse
(Body Diode) c p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V e
trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 35A, VDD = 50V
Qrr Reverse Recovery Charge ––– 820 1230 nC di/dt = 100A/µs e

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 IRFP4332PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.5V 6.5V
6.0V 6.0V
100 100
BOTTOM 5.5V BOTTOM 5.5V

5.5V

10
5.5V 10

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
ID = 35A

RDS(on) , Drain-to-Source On Resistance

3.0 VGS = 10V
ID, Drain-to-Source Current(Α)

100
TJ = 175°C
2.5

10
(Normalized)
2.0

1 TJ = 25°C 1.5

1.0
0.1
VDS = 25V
0.5
≤ 60µs PULSE WIDTH
0.01
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

1000 1000
L = 220nH L = 220nH
C = 0.3µF C = Variable
100°C 800
100°C
800
25°C 25°C
Energy per pulse (µJ)
Energy per pulse (µJ)

600 600

400 400

200 200

0 0
150 160 170 180 190 200 100 110 120 130 140 150 160 170

VDS, Drain-to -Source Voltage (V) ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage Fig 6. Typical EPULSE vs. Drain Current
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 IRFP4332PbF
1400 1000
L = 220nH
1200
C= 0.3µF

ISD , Reverse Drain Current (A)

C= 0.2µF
100
C= 0.1µF
Energy per pulse (µJ)

1000
TJ = 175°C
800
10
600

400
1
TJ = 25°C
200
VGS = 0V
0 0.1
25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (°C) VSD, Source-to-Drain Voltage (V)

Fig 7. Typical EPULSE vs.Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

10000 20
VGS = 0V, f = 1 MHZ ID= 35A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 200V

VGS, Gate-to-Source Voltage (V)

Crss = Cgd
8000 16 VDS = 125V
Coss = Cds + Cgd
VDS = 50V
C, Capacitance (pF)

Ciss 12
6000

4000 8

Coss
4
2000

Crss
0
0
0 40 80 120 160
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

60 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
50 1µsec
ID, Drain-to-Source Current (A)

100 100µsec
ID, Drain Current (A)

40 10µsec

30 10

20

1
10 Tc = 25°C
Tj = 175°C
Single Pulse
0 0.1
25 50 75 100 125 150 175 1 10 100 1000
TJ , Junction Temperature (°C) VDS , Drain-to-Source Voltage (V)

Fig 11. Maximum Drain Current vs. Case Temperature Fig 12. Maximum Safe Operating Area
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1000
0.40
()

EAS, Single Pulse Avalanche Energy (mJ)

RDS (on), Drain-to -Source On Resistance Ω

ID = 35A I D
TOP 8.3A
800 13A
0.30 BOTTOM 35A

600

0.20

400

0.10
TJ = 125°C
200
TJ = 25°C

0.00 0
5 6 7 8 9 10 25 50 75 100 125 150 175

VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)

Fig 13. On-Resistance Vs. Gate Voltage Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0 180
ton= 1µs
160 Duty cycle = 0.25
VGS(th) Gate threshold Voltage (V)

Half Sine Wave

Repetitive Peak Current (A)

140 Square Pulse
4.0
ID = 250µA 120

100
3.0
80

60
2.0
40

20

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TJ , Temperature ( °C ) Case Temperature (°C)

Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs.
Case temperature
1

D = 0.50
Thermal Response ( ZthJC )

0.1
0.20

0.10 R1
R1
R2
R2
R3
R3 Ri (°C/W) τι (sec)
τJ
0.05 τJ τC
τ 0.069565 0.000074
τ1 τ2 τ3
τ1 τ2 τ3
0.172464 0.001546
0.01 0.02 Ci= τi/Ri
0.01 Ci= τi/Ri 0.178261 0.019117

Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP4332PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+
***
VGS=10V
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD
*
RG • dv/dt controlled by RG V DD Re-Applied
+
• Driver same type as D.U.T. ** Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* Use P-Channel Driver for P-Channel Measurements *** VGS = 5V for Logic Level Devices
** Reverse Polarity for P-Channel

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ

12V .2µF Vgs

.3µF

+
V
D.U.T. - DS

VGS Vgs(th)

3mA

IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr

Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform

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 IRFP4332PbF

A
RG PULSE A
C
DRIVER

PULSE B
VCC

B
Ipulse
RG
DUT
tST

Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

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IRFP4332PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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 IRFP4332PbF
TO-247AC Part Marking Information

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TO-247AC Lead Option- 203

All dimensions in millimeters (inches)

Lead Assignments
1- Gate
2- Drain
3- Source

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.35mH, RG = 25Ω, IAS = 35A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Half sine wave with duty cycle = 0.25, ton=1µsec.
† Applicable to Sustain and Energy Recovery applications.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2009
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IMPORTANT NOTICE
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event be regarded as a guarantee of conditions or
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Technologies hereby disclaims any and all
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customer’s applications.
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to evaluate the suitability of the product for the
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respect to such application.
For further information on the product, technology,
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