E3 238 Analog VLSI Circuits

Lecture 3: Long Channel MOSFET

Gaurab Banerjee
Department of Electrical Communication Engineering,
Indian Institute of Science, Bangalore
banerjee@ece.iisc.ernet.in
 Carrier Transport
v meters

-> Qd = Charge density along the

direction of transport (Coulombs/meter)
-> v = velocity of carriers along the
direction of transport (meter/second)
-> I = Qd v (Coulombs/second)

5x10 4 m/s

velocity
1 second later

I = Qd v

10 4 V/cm
-> For most semiconductors at low electric fields
Electric
(linear region), vd = drift velocity =  Field
-> Typical e-/h+ mobility in intrinsic Si = 1350/480 cm2/V.s
 Calculation of Current

-> MOS I/V relationship

=> in triode

-> Behaves like a resistor

-> MOS I/V relationship

=> in saturation: “square
law”
 Device Characteristics

In Triode In Saturation

Composite MOS ID-VDS (output ) characteristics

 Key Device Parameters
-> Vgs - Vth is caled the “gate overdrive”, Id goes up at the gate
overdrive goes up.
-> W/L is called the “aspect ratio” of the device, Id goes up as
W/L goes up.
-> The MOS device in the triode region behaves like a resistor
with

-> n Cox , p Cox are often called the “process trans-conductance”

-> Represented by kn‘ and kp‘ -> some texts use these symbols
to represent ½ n Cox , ½ p Cox (VERIFY!)
-> These simplified equations are applicable to long channel MOS
devices, short channel devices exhibit many higher order effects.
 Typical Technology Parameters
IBM’s 0.35 um Technology IBM’s 0.18 um Technology
L = 0.35 um L = 0.18 um
tox = 82 Å => Cox = 4.2 fF/m2 tox = 45 Å => Cox = 7.7 fF/m2
n = 444 cm2/V.s n = 414 cm2/V.s
p = 95.5 cm2/V.s p = 88 cm2/V.s
About 1.5x
Kn = n Cox = 186.0 A/V2 Kn = n Cox = 317.0 A/V2
Kp = p Cox = 40.2 A/V2 Kp = p Cox = 67.0 A/V2

IBM’s 0.13 um Technology

Compare this data to e-,
p+ mobility of 1350 and
480 cm2/V.s in Silicon ->
What do you observe?
L = 0.13 um
tox = 32 Å => Cox = 10.8 fF/m2
n = 677 cm2/V.s
p = 85 cm2/V.s
Kn = n Cox = 730.0 A/V2
Kp = p Cox = 91.0 A/V2

Data Available from MOSIS Web site: www.mosis.com

 Constant Field Scaling

R. Dennard et al., IEEE J.S.S.C, 1974

• Scale vertical and horizontal dimensions by 

• Scale voltages (supply, threshold) by 
• Scale doping levels by 
 The Benefits of Scaling

Digital Analog

• Scaling has driven the digital revolution!

• Doesn’t work that well for analog, supply scaling hurts.
• Higher fTs -> higher bandwidth for analog circuits
 Trends..

Data Available from MOSIS Web site: meroli.web.cern.ch