LAPT 2SC2837

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC2837 Unit Symbol Conditions 2SC2837 Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 150 V ICBO VCB=150V 100max 9.6 2.0±0.1

VCEO 150 V IEBO VEB=5V 100max µA

VEBO 5 V V(BR)CEO IC=25mA 150min V

19.9±0.3

4.0
a
IC 10 A hFE VCE=4V, IC=3V 50min∗ ø3.2±0.1
b
IB 2 A VCE(sat) IC=5A, IB=0.5A 2.0max V
PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=80V, f=1MHz 60typ pF 3

Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g

(V) (Ω) (A) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
60 12 5 –5 500 –500 0.2typ 1.4typ 0.35typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
10 3 10
Collector-Emitter Saturation Voltage V CE(s a t) (V )

mA 300m
A
400

A
8 200m 8
A
160m

Collector Current I C (A)

Collector Current I C (A)

2
12 0m A
6 6
80mA

4 4

p)

p)
40mA

em
I C =10A

Tem
1

eT
as

se
(C
I B =20mA

(Ca
2 2
5A 5˚C

˚C
˚C
12

–30
25

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a (˚ C/W)

(V C E =4V) (V C E =4V)
200 200 3
125˚C
D C Cur r ent Gai n h F E
DC Curr ent Gain h FE

Transient Thermal Resistance

Typ 25˚C
100 100
–30˚C 1

50 50
0.5

20 20 0.2
0.02 0.1 1 10 0.02 0.05 0.1 0.5 1 5 10 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
120 30 100
10

M aximum Power Dissipa ti on P C (W)

m

100
s

10
Cu t-off Fr eque ncy f T ( MH Z )

D
ith
Collector Curren t I C ( A)

Typ C
80
In

5
fin
ite
he

60 50
at
si
nk

40 1

Without Heatsink
0.5 Natural Cooling
20

Without Heatsink
0.2 3.5
0 0
–0.02 –0.1 –1 –6 2 10 100 200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

59