Transistors

2SC1359
Silicon NPN epitaxial planar type

For high-frequency amplification Unit: mm

Complementary to 2SA0838 5.0±0.2 4.0±0.2

5.1±0.2
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT

0.7±0.2
0.7±0.1

12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C

ue e/
Parameter Symbol Rating Unit
0.45+0.15
–0.1 0.45+0.15
–0.1

tin nc
Collector-base voltage (Emitter open) VCBO 30 V
2.5+0.6 2.5+0.6

e)
–0.2 –0.2

d
typ
Collector-emitter voltage (Base open) VCEO 20 V

d
on e.
1 2 3

ue
Emitter-base voltage (Collector open) VEBO 5 V

isc ag
1: Emitter

±0.2

tin
, d st
on na

ed cle2.3
Collector current IC 30 mA 2: Collector
3: Base
Collector power dissipation PC 400 mW

yp cy
TO-92-B1 Package

d t ife
Junction temperature Tj 150 °C

ue t l
tin uc
Storage temperature Tstg −55 to +150 °C
sc te

on rod
isc r P
d d fou
Di ain

ne ng
pla wi
e, ollo

■ Electrical Characteristics Ta = 25°C ± 3°C

typ s f
ce de
an clu

Parameter Symbol Conditions Min Typ Max Unit

en in
M

VCB = 10 V, IE = 0 µA
int ed

Collector-base cutoff current (Emitter open) ICBO 0.1

ma inu

Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220 

e, ont

Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz

typ isc
ce /D

Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB

an ce
en an

Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω

int ten

Reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF
ma ain

(Common emitter)
M

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
ed

2. *: Rank classification
lan

Rank B C
(p

hFE 70 to 140 110 to 220

Publication date: March 2003 SJC00102BED 1

2SC1359

PC  Ta IC  VCE IC  I B
500 12 15.0
Ta = 25°C VCE = 10 V
Ta = 25°C
IB = 100 µA
Collector power dissipation PC (mW)

10 12.5
400

Collector current IC (mA)

Collector current IC (mA)

8 80 µA 10.0
300
60 µA
6 7.5

200
4 40 µA 5.0

100 20 µA
2 2.5

0 0 0
0 40 80 120 160 0 4 8 12 16 0 20 40 60 80 100

ue e/
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (µA)

tin nc

e)
IB  VBE IC  VBE VCE(sat)  IC

d
yp
dt
120 60 100
IC / IB = 10

on Prod voltage V (V)

on e.
VCE = 10 V

ue
VCE = 10 V

isc ag
Ta = 25°C

tin
CE(sat)

, d st
on na
100 50

ed cle
Collector current I (mA)

10

yp cy
Base current IB (mA)

25°C

d t ife
80 40

ue t l
C

tin uc
Ta = 75°C −25°C
isc saturation
sc te

60 30 1

Ta = 75°C
r
d d fou
Collector-emitter

40 20 25°C
Di ain

ne ng

0.1
pla wi

−25°C
e, ollo

20 10
typ s f
ce de

0 0 0.01
an clu

0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 100
en in
M

Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA)
int ed
ma inu
e, ont
typ isc

hFE  IC fT  I E Zrb  IE
ce /D

240
an ce

400 60
VCE = 10 V VCB = 10 V
en an

Ta = 25°C f = 2 MHz
VCB = 10 V
int ten

Ta = 25°C
Reverse transfer impedance Z (Ω)

200
Forward current transfer ratio hFE

50
ma ain
Transition frequency f (MHz)

6V
rb

300
M

160 Ta = 75°C 40
T
ed

25°C
lan

120 200 30
−25°C
(p

80 20

100
40 10

0 0 0
0.1 1 10 100 − 0.1 −1 −10 −100 − 0.1 −1 −10
Collector current IC (mA) Emitter current IE (mA) Emitter current IE (mA)

2 SJC00102BED
 2SC1359

Cre  VCE GP  IE NF  IE
3.0 24 12
f = 10.7 MHz f = 100 MHz VCB = 6 V
Ta = 25°C VCB = 10 V f = 100 MHz
Ta = 25°C
Cre (pF)

2.5 20 10 Rg = 50 Ω
Ta = 25°C

Noise figure NF (dB)

Power gain GP (dB)
Reverse transfer capacitance

2.0 16 8
IC = 3 mA
1 mA
(Common emitter)

1.5 12 6

1.0 8 4

0.5 4 2

0 0 0
0.1 1 10 100 − 0.1 −1 −10 −100 − 0.1 −1 −10

ue e/
Collector-emitter voltage VCE (V) Emitter current IE (mA) Emitter current IE (mA)

tin nc

e)
bie  gie bre  gre bfe  gfe

d
typ
24 0 0

d
f = 10.7 MHz f = 10.7 MHz

on e.
yre = gre + jbre

ue
yie = gie + jbie − 0.1 mA 10.7

isc ag
58
VCE = 10 V VCE = 10 V −1 mA 100

tin
istransferr Psusceptance b (mS)
Reverse transfer susceptance b (mS)

, d st
on na
20 − 0.1 −20

ed cle
−7 mA 58
−4 mA
Input susceptance bie (mS)

fe
re

yp cy
100 IE = −1 mA −2 mA 100

d t ife
16 −2 mA 58 − 0.2 −40

ue t l
tin uc
IE = −1 mA

IE = −4 mA
sc te

12 − 0.3
on rod 58 −60
100 58
d d fou

8 − 0.4 −80
100
Di ain

ne ng
Forward c
pla wi

f = 10.7 MHz
e, ollo

4 − 0.5 −100
yfe = gfe + jbfe
typ s f

VCE = 10 V
ce de

0 − 0.6 −120
an clu

0 8 16 24 32 40 − 0.5 − 0.4 − 0.3 − 0.2 − 0.1 0 0 20 40 60 80 100

en in
M

Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS)
int ed
ma inu
e, ont
typ isc

boe  goe
ce /D
an ce

1.2
yoe = goe + jboe
en an

VCE = 10 V
int ten

1.0
ma ain
Output susceptance boe (mS)

0.8 IE = −1 mA
100
ed
lan

0.6
(p

58
0.4

0.2

f = 10.7 MHz
0
0 0.1 0.2 0.3 0.4 0.5
Output conductance goe (mS)

SJC00102BED 3
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ue e/
Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

tin nc
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

e)
d
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

yp
defect which may arise later in your equipment.

dt
on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

ue t l
tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
isc r P

Electric Industrial Co., Ltd.

d d fou
Di ain

ne ng
pla wi
e, ollo
typ s f
ce de
an clu
en in
M

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p