Transistors

2SC3313
Silicon NPN epitaxial planar type

For high-frequency amplification Unit: mm

4.0±0.2 2.0±0.2

3.0±0.2
(0.8)
■ Features
• Optimum for high-density mounting

7.6
0.75 max.
• Allowing supply with the radial taping

(0.8)
• Optimum for RF amplification of FM/AM radios

15.6±0.5
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■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit 0.45+0.20
–0.10

tin nc 0.45+0.20

e)
(2.5) (2.5) –0.10

d
Collector-base voltage (Emitter open) VCBO 30 V

typ
0.7±0.1
Collector-emitter voltage (Base open) VCEO 20 V

d
on e.
ue
isc ag
1: Emitter

tin
Emitter-base voltage (Collector open) VEBO 5 V

, d st
on na
2: Collector
1 2 3

ed cle
Collector current IC 30 mA 3: Base

yp cy
NS-B1 Package

d t ife
Collector power dissipation PC 300 mW

ue t l
°C
tin uc
Junction temperature Tj 150
sc te

on rod
Storage temperature Tstg −55 to +150 °C
isc r P
d d fou
Di ain

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pla wi
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■ Electrical Characteristics Ta = 25°C ± 3°C

typ s f
ce de

Parameter Symbol Conditions Min Typ Max Unit

an clu
en in
M

Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V

int ed

IC = 2 mA, IB = 0
ma inu

Collector-emitter voltage (Base open) VCEO 20 V

e, ont

Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V

typ isc

Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 250 

ce /D
an ce

Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 MHz

en an
int ten

Reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.6 pF

ma ain

(Common emitter)
M

Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 60 Ω

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
ed
lan

2. *: Rank classification
(p

Rank B C
hFE 70 to 160 110 to 250

Publication date: March 2003 SJC00129BED 1

 2SC3313

PC  Ta IC  VCE IC  VBE
500 24 60
Ta = 25°C VCE = 10 V
Collector power dissipation PC (mW)

20 50
400

Collector current IC (mA)

Collector current IC (mA)

16 40
25°C
300 IB = 100 µA Ta = 75°C −25°C

12 30
80 µA
200
8 60 µA
20

40 µA
100
4 10
20 µA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

tin nc

e)
VCE(sat)  IC hFE  IC fT  I E

d
typ
100 300 600

d
IC / IB = 10

on e.
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V Ta = 25°C

ue
isc ag
tin
, d st
on na
250 500
FE

ed cle
on Prod f (MHz)
Forward current transfer ratio h

10

yp cy
Ta = 75°C

d t ife
200 400

ue t l
tin uc
isc frequency
25°C
VCB = 10 V
sc te

1 150 300
−25°C 6V
r

Ta = 75°C
d d fou
Transition

100 200
Di ain

ne ng

25°C
0.1
pla wi
e, ollo

−25°C 50 100
typ s f
ce de

0.01 0 0
an clu

0.1 1 10 100 0.1 1 10 100 − 0.1 −1 −10 −100

en in
M

Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

int ed
ma inu
e, ont
typ isc

Cob  VCB Zrb  IE Cre  VCE

ce /D
an ce

5 120 2.4
C (pF)

IE = 0 f = 2 MHz f = 10.7 MHz

en an

f = 1 MHz Ta = 25°C Ta = 25°C

int (Ω)ten

C (pF)
(Common base, input open circuited) ob

Ta = 25°C 100 2.0

ma ain

4
re
rb
M
Reverse transfer impedance Z

IC = 1 mA, 3 mA
Reverse transfer capacitance

80 1.6
3
Collector output capacitance

ed
lan

(Common emitter)

60 1.2
(p

2
40 0.8
VCB = 6 V

1
20 10 V 0.4

0 0 0
1 10 100 − 0.1 −1 −10 0.1 1 10 100
Collector-base voltage VCB (V) Emitter current IE (mA) Collector-emitter voltage VCE (V)

2 SJC00129BED
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ue e/
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tin nc
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e)
d
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

yp
defect which may arise later in your equipment.

dt
on e.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

ue t l
tin uc
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
isc r P

Electric Industrial Co., Ltd.

d d fou
Di ain

ne ng
pla wi
e, ollo
typ s f
ce de
an clu
en in
M

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p