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2SC4767
Silicon NPN epitaxial planer type
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5.0±0.2 4.0±0.2
■ Features
8.0±0.2
0.7±0.2
● High transition frequency fT.
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● Output of 0.6W is obtained in the VHF band (f=175MHz).
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0.7±0.1
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13.5±0.5
■ Absolute Maximum Ratings
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(Ta=25˚C)
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Parameter Symbol Ratings Unit
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+0.15 +0.15
Collector to base voltage VCBO 36 V 0.45 –0.1 0.45 –0.1
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Collector to emitter voltage VCEO 16 V 1.27 1.27
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2.3±0.2
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Emitter to base voltage VEBO 3 V
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1 2 3
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Collector current IC 0.3 A 2:Collector
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2.54±0.15
3:Base
Collector power dissipation PC 1 W
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TO–92NL Package
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Junction temperature Tj 150 ˚C
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Storage temperature Tstg –55 ~ +150 ˚C
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■ Electrical Characteristics
M
(Ta=25˚C)
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tp t f
η
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Pl
1
Transistor 2SC4767
15pF
L2
Output
20pF 30pF L1 50Ω
Input 30pF
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50Ω
15pF
RFC2
RFC1
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.
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30pF 25pF
30pF
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47Ω
1000pF
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0.0025pF
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ct
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Circuit constants
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L1: φ2mm silver plated copper wire, 0.5T, D = 15
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L2: φ1.5mm silver plated copper wire, 2T, D = 15
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RFC2: φ1.5mm silver plated copper wire, 5T, D = 8
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lan m m es
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d
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tin
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PC — Ta IC — VCE IC — VBE
on
sc
Ta=25˚C
Ta=25˚C
Collector power dissipation PC (W)
140 350
e/
1.0
nc
IB=4.0mA
120 300
3.5mA
na
tp t f
0.8
100 250
ht visi
te
3.0mA
ain
2.0mA
ea
60 150
0.4
Pl
1.5mA
40 100
1.0mA
0.2
20 0.5mA 50
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)
2
Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V)
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0
2
4
6
8
10
12
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
1
M
3
Transistor
ain
te
10
0.001 0.003 0.01 0.03
na
Cob — VCB
0.1
VCE(sat) — IC
nc
30
Di ain
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0.3
IE=0
Collector current IC (A)
IC/IB=5
Ta=25˚C
f=1MHz
Di
Ta=25˚C
1
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
120
140
160
0
1
Pl p d
3
40
ea lan inc
se
10
on na
p ed lud
80
30
ht visi lan m m es PO — Pi
hFE — IC
120
tp t f ed ain ain foll
100
:// ol d d te te ow
160
Input power Pi (mW)
ww lo is is na n i
300
Collector current IC (mA)
Ta=25˚C
Ta=25˚C
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VCE=13.5V
f=175MHz
VCC=13.5V
200
1000
se g U tin tin t e ou
m R ue ue yp typ r P
e Transition frequency fT (GHz)
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0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–1
n. ab typ ty du
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pa ou e pe ct
–3
na t l
d d life
–10
so ate cy
nic st
–30
cle
fT — I E
/e a ge
Ta=25˚C
VCB=10V
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3
2SC4767
n.
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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life
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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w. win con con nce anc ng f
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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Electric Industrial Co., Ltd.
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